comprising materials from other groups of the periodic system than the materials of the active layer

Industry

CPC
H01S5/3214

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Parent Industries

HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

Current Industry

H01S5/3214comprising materials from other groups of the periodic system than the materials of the active layer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Optical device
- Patent number 12,095,227
- Issue date Sep 17, 2024
- Nippon Telegraph and Telephone Corporation
- Suguru Yamaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable devices formed on gallium and nitrogen material
- Patent number 12,088,065
- Issue date Sep 10, 2024
- KYOCERA SLD Laser, Inc.
- Melvin McLaurin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser devices using a semipolar plane
- Patent number 11,749,969
- Issue date Sep 5, 2023
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable laser diode formed on c-plane gallium and nitrogen m...
- Patent number 11,569,637
- Issue date Jan 31, 2023
- KYOCERA SLD Laser, Inc.
- Melvin McLaurin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed high bandwidth vertical-cavity surface-emitting laser
- Patent number 11,563,307
- Issue date Jan 24, 2023
- Mellanox Technologies, Ltd.
- Itshak Kalifa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based electronic device having an oxide cladding layer and...
- Patent number 11,469,574
- Issue date Oct 11, 2022
- King Abdullah University of Science and Technology
- Kazuhiro Ohkawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Laser devices using a semipolar plane
- Patent number 11,387,630
- Issue date Jul 12, 2022
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser and electronic apparatus
- Patent number 11,271,368
- Issue date Mar 8, 2022
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Kota Tokuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Waveguide heterostructure for dispersion compensation in semiconduc...
- Patent number 11,070,030
- Issue date Jul 20, 2021
- Jérôme Faist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable laser diode formed on c-plane gallium and nitrogen m...
- Patent number 10,903,625
- Issue date Jan 26, 2021
- Soraa Laser Diode, Inc.
- Melvin McLaurin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser devices using a semipolar plane
- Patent number 10,879,674
- Issue date Dec 29, 2020
- Soraa Laser Diode, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser
- Patent number 10,811,843
- Issue date Oct 20, 2020
- OSRAM OLED GmbH
- Sven Gerhard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable waveguide devices
- Patent number 10,741,999
- Issue date Aug 11, 2020
- Infinera Coropration
- Peter W. Evans
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photonic integrated circuit
- Patent number 10,651,627
- Issue date May 12, 2020
- Infinera Corporaton
- Peter W. Evans
- G02 - OPTICS
Information Patent Grant
Laser devices using a semipolar plane
- Patent number 10,522,976
- Issue date Dec 31, 2019
- Soraa Laser Diode, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable laser diode formed on c-plane gallium and nitrogen m...
- Patent number 10,439,364
- Issue date Oct 8, 2019
- Soraa Laser Diode, Inc.
- Melvin McLaurin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable waveguide devices
- Patent number 10,205,301
- Issue date Feb 12, 2019
- Infinera Corporation
- Peter W. Evans
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable waveguide devices
- Patent number 10,181,697
- Issue date Jan 15, 2019
- Infinera Corporation
- Peter W. Evans
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Photonic integrated circuit
- Patent number 10,181,696
- Issue date Jan 15, 2019
- Infinera Corporation
- Peter W. Evans
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Tunable waveguide devices
- Patent number 10,181,698
- Issue date Jan 15, 2019
- Infinera Corporation
- Peter W. Evans
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Tunable waveguide devices
- Patent number 10,177,531
- Issue date Jan 8, 2019
- Infinera Corporation
- Peter W. Evans
- G02 - OPTICS
Information Patent Grant
Manufacturable laser diode formed on C-plane gallium and nitrogen m...
- Patent number 9,774,170
- Issue date Sep 26, 2017
- Soraa Laser Diode, Inc.
- Melvin McLaurin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth of p-type cladding regions using nitrogen gas for...
- Patent number 9,564,736
- Issue date Feb 7, 2017
- Soraa Laser Diode, Inc.
- Po Shan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device
- Patent number 9,455,547
- Issue date Sep 27, 2016
- Mitsubishi Electric Corporation
- Kyosuke Kuramoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable laser diode formed on C-plane gallium and nitrogen m...
- Patent number 9,368,939
- Issue date Jun 14, 2016
- Soraa Laser Diode, Inc.
- Melvin McLaurin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced optical gain and lasing in indirect gap semiconductor thin...
- Patent number 9,166,363
- Issue date Oct 20, 2015
- Faquir C. Jain
- B82 - NANO-TECHNOLOGY
Information Patent Grant
(Al,Ga,In)N diode laser fabricated at reduced temperature
- Patent number 9,054,498
- Issue date Jun 9, 2015
- The Regents of the University of California
- Daniel A. Cohen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride semiconductor light-emitting device
- Patent number 8,942,269
- Issue date Jan 27, 2015
- Panasonic Corporation
- Hideki Kasugai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Waveguide, apparatus including the waveguide, and method of manufac...
- Patent number 8,805,147
- Issue date Aug 12, 2014
- Canon Kabushiki Kaisha
- Yasushi Koyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
(Al,Ga,In)N diode laser fabricated at reduced temperature
- Patent number 8,790,943
- Issue date Jul 29, 2014
- The Regents of the University of California
- Daniel A. Cohen
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
ELECTRO-ABSORPTION MODULATOR, OPTICAL SEMICONDUCTOR DEVICE AND OPTI...
- Publication number 20210175682
- Publication date Jun 10, 2021
- Mitsubishi Electric Corporation
- Shinya OKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAVEGUIDE HETEROSTRUCTURE FOR DISPERSION COMPENSATION IN SEMICONDUC...
- Publication number 20200287353
- Publication date Sep 10, 2020
- ETH Zurich
- Jérôme FAIST
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED ELECTRONIC DEVICE HAVING AN OXIDE CLADDING LAYER AND...
- Publication number 20200119523
- Publication date Apr 16, 2020
- King Abdullah University of Science and Technology
- Kazuhiro OHKAWA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HIGH SPEED HIGH BANDWIDTH VERTICAL-CAVITY SURFACE-EMITTING LASER
- Publication number 20200106242
- Publication date Apr 2, 2020
- MELLANOX TECHNOLOGIES, LTD.
- Itshak Kalifa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LASER
- Publication number 20190393676
- Publication date Dec 26, 2019
- Osram Opto Semiconductors GmbH
- Sven GERHARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tunable Waveguide Devices
- Publication number 20180331497
- Publication date Nov 15, 2018
- Infinera Corporation
- Peter W. Evans
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Tunable Waveguide Devices
- Publication number 20180331498
- Publication date Nov 15, 2018
- Infinera Corporation
- Peter W. Evans
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
MANUFACTURABLE LASER DIODE FORMED ON C-PLANE GALLIUM AND NITROGEN M...
- Publication number 20180013265
- Publication date Jan 11, 2018
- Soraa Laser Diode, Inc.
- Melvin McLaurin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LASER DEVICE
- Publication number 20160099543
- Publication date Apr 7, 2016
- Mitsubishi Electric Corporation
- Kyosuke KURAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
(Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE
- Publication number 20140301419
- Publication date Oct 9, 2014
- The Regents of the University of California
- Daniel A. Cohen
- B82 - NANO-TECHNOLOGY
Information Patent Application
Enhanced Optical Gain and Lasing in Indirect Gap Semiconductor Thin...
- Publication number 20140185640
- Publication date Jul 3, 2014
- Faquir C. Jain
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
- Publication number 20140023103
- Publication date Jan 23, 2014
- PANASONIC CORPORATION
- Hideki KASUGAI
- B82 - NANO-TECHNOLOGY
Information Patent Application
(Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE
- Publication number 20130215921
- Publication date Aug 22, 2013
- The Regents of the University of California
- Daniel A. Cohen
- B82 - NANO-TECHNOLOGY
Information Patent Application
Single-Frequency Distributed Feedback Laser Diode with Complex-Coup...
- Publication number 20130022073
- Publication date Jan 24, 2013
- Martin Achtenhagen
- B82 - NANO-TECHNOLOGY
Information Patent Application
WAVEGUIDE, APPARATUS INCLUDING THE WAVEGUIDE, AND METHOD OF MANUFAC...
- Publication number 20120292512
- Publication date Nov 22, 2012
- Canon Kabushiki Kaisha
- Yasushi Koyama
- G02 - OPTICS
Information Patent Application
SEMICONDUCTOR LASER ELEMENT AND METHOD OF MANUFACTURING THEREOF
- Publication number 20110235666
- Publication date Sep 29, 2011
- Nichia Corporation.
- Shinya SONOBE
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING DEVICE
- Publication number 20110121337
- Publication date May 26, 2011
- Rohm Co., Ltd.
- Yukio Shakuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Light Emitting Devices With Non-Epitaxial Upper Cladding
- Publication number 20110051768
- Publication date Mar 3, 2011
- Palo Alto Research Center Incorporated
- David P. Bour
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LASER ELEMENT
- Publication number 20100278207
- Publication date Nov 4, 2010
- NICHIA CORPORATION
- Shinya Sonobe
- B82 - NANO-TECHNOLOGY
Information Patent Application
(Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE
- Publication number 20100142576
- Publication date Jun 10, 2010
- The Regents of the University of California
- Daniel A. Cohen
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor Light Emitting Devices With Non-Epitaxial Upper Cladding
- Publication number 20100074292
- Publication date Mar 25, 2010
- Palo Alto Research Center Incorporated
- David P. Bour
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING TH...
- Publication number 20090224240
- Publication date Sep 10, 2009
- THE FURUKAWA ELECTRIC CO., LTD.
- Tatsuyuki Shinagawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20080008220
- Publication date Jan 10, 2008
- Matsushita Electric Industrial Co., Ltd.
- Tetsuzo Ueda
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride semiconductor laser device and method of manufacturing the...
- Publication number 20070098030
- Publication date May 3, 2007
- Samsung Electronics Co., Ltd.
- Kyoung-ho Ha
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor laser device and manufacturing method thereof
- Publication number 20050279994
- Publication date Dec 22, 2005
- Matsushita Electric Industrial Co., Ltd.
- Tetsuzo Ueda
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor laser device
- Publication number 20050180475
- Publication date Aug 18, 2005
- Samsung Electronics Co., Ltd.
- Kyoung-ho Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Laser diode with metal-oxide upper cladding layer
- Publication number 20040184497
- Publication date Sep 23, 2004
- Xerox Corporation.
- Michael A. Kneissl
- B82 - NANO-TECHNOLOGY
Information Patent Application
Group III nitride LED with silicon carbide cladding layer
- Publication number 20040159842
- Publication date Aug 19, 2004
- John Adam Edmond
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor nanocrystalline materials and their uses
- Publication number 20030010987
- Publication date Jan 16, 2003
- Uri Banin
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor laser device
- Publication number 20020181527
- Publication date Dec 5, 2002
- Tomoki Ono
- B82 - NANO-TECHNOLOGY

comprising materials from other groups of the periodic system than the materials of the active layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Optical device

Manufacturable devices formed on gallium and nitrogen material

Laser devices using a semipolar plane

Manufacturable laser diode formed on c-plane gallium and nitrogen m...

High speed high bandwidth vertical-cavity surface-emitting laser

Nitride-based electronic device having an oxide cladding layer and...

Laser devices using a semipolar plane

Semiconductor laser and electronic apparatus

Waveguide heterostructure for dispersion compensation in semiconduc...

Manufacturable laser diode formed on c-plane gallium and nitrogen m...

Laser devices using a semipolar plane

Semiconductor laser

Tunable waveguide devices

Photonic integrated circuit

Laser devices using a semipolar plane

Manufacturable laser diode formed on c-plane gallium and nitrogen m...

Tunable waveguide devices

Tunable waveguide devices

Photonic integrated circuit

Tunable waveguide devices

Tunable waveguide devices

Manufacturable laser diode formed on C-plane gallium and nitrogen m...

Epitaxial growth of p-type cladding regions using nitrogen gas for...

Semiconductor laser device

Manufacturable laser diode formed on C-plane gallium and nitrogen m...

Enhanced optical gain and lasing in indirect gap semiconductor thin...

(Al,Ga,In)N diode laser fabricated at reduced temperature

Nitride semiconductor light-emitting device

Waveguide, apparatus including the waveguide, and method of manufac...

(Al,Ga,In)N diode laser fabricated at reduced temperature

Patents Applicationslast 30 patents

ELECTRO-ABSORPTION MODULATOR, OPTICAL SEMICONDUCTOR DEVICE AND OPTI...

WAVEGUIDE HETEROSTRUCTURE FOR DISPERSION COMPENSATION IN SEMICONDUC...

NITRIDE-BASED ELECTRONIC DEVICE HAVING AN OXIDE CLADDING LAYER AND...

HIGH SPEED HIGH BANDWIDTH VERTICAL-CAVITY SURFACE-EMITTING LASER

SEMICONDUCTOR LASER

Tunable Waveguide Devices

Tunable Waveguide Devices

MANUFACTURABLE LASER DIODE FORMED ON C-PLANE GALLIUM AND NITROGEN M...

SEMICONDUCTOR LASER DEVICE

(Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE

Enhanced Optical Gain and Lasing in Indirect Gap Semiconductor Thin...

NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

(Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE

Single-Frequency Distributed Feedback Laser Diode with Complex-Coup...

WAVEGUIDE, APPARATUS INCLUDING THE WAVEGUIDE, AND METHOD OF MANUFAC...

SEMICONDUCTOR LASER ELEMENT AND METHOD OF MANUFACTURING THEREOF

SEMICONDUCTOR LIGHT-EMITTING DEVICE

Semiconductor Light Emitting Devices With Non-Epitaxial Upper Cladding

SEMICONDUCTOR LASER ELEMENT

(Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE

Semiconductor Light Emitting Devices With Non-Epitaxial Upper Cladding

SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING TH...

SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF

Nitride semiconductor laser device and method of manufacturing the...

Semiconductor laser device and manufacturing method thereof

Semiconductor laser device

Laser diode with metal-oxide upper cladding layer

Group III nitride LED with silicon carbide cladding layer

Semiconductor nanocrystalline materials and their uses

Semiconductor laser device