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H
ELECTRICITY
H01
Electric elements
H01S
DEVICES USING STIMULATED EMISSION
Current Industry
H01S5/00
Semiconductor lasers
Sub Industries
H01S5/0014
Measuring characteristics or properties thereof
H01S5/0021
Degradation or life time measurements
H01S5/0028
Laser diodes used as detectors
H01S5/0035
Simulations of laser characteristics
H01S5/0042
On wafer testing
H01S5/005
Optical devices external to the laser cavity, specially adapted therefor
H01S5/0057
Temporal shaping
H01S5/0064
Anti-reflection devices
H01S5/0071
Beam steering
H01S5/0078
Frequency filtering
H01S5/0085
Modulating the output
H01S5/0092
Nonlinear frequency conversion
H01S5/02
Structural details or components not essential to laser action
H01S5/0201
Separation of the wafer into individual elements
H01S5/0202
Cleaving
H01S5/0203
Etching
H01S5/0205
during growth of the semiconductor body
H01S5/0206
Substrates
H01S5/0207
Substrates having a special shape
H01S5/0208
Semi-insulating substrates
H01S5/021
Silicon based substrates
H01S5/0211
Substrates made of ternary or quaternary compounds
H01S5/0212
with a graded composition
H01S5/0213
Sapphire, quartz or diamond based substrates
H01S5/0215
Bonding to the substrate
H01S5/0216
using an intermediate compound
H01S5/0217
Removal of the substrate
H01S5/0218
Substrates comprising semiconducting materials from different groups of the periodic system than the active layer
H01S5/022
Mountings Housings
H01S5/02204
including a getter material to absorb contaminations
H01S5/02208
Shape of the housing
H01S5/02212
Can-type
H01S5/02216
Butterfly-type
H01S5/0222
filled with special gases
H01S5/02224
Oxygen is contained in the housing
H01S5/02228
filled with a resin, or the complete housing being made of resin
H01S5/02232
filled with a liquid
H01S5/02236
Mounts or sub-mounts
H01S5/0224
Up-side down mounting
H01S5/02244
Lead-frames
H01S5/02248
Mechanically integrated components on a mount or an optical micro-bench
H01S5/02252
Relative positioning of laser diode and optical components
H01S5/02256
Details of fixing the laser diode on the mount
H01S5/0226
using an adhesive
H01S5/02264
by clamping
H01S5/02268
Positioning
H01S5/02272
using soldering
H01S5/02276
Wire-bonding details
H01S5/0228
Out-coupling light
H01S5/02284
with an optical fibre
H01S5/02288
with a lens
H01S5/02292
with a beam deflecting element
H01S5/02296
Details of a window
H01S5/024
Cooling arrangements
H01S5/02407
Active cooling
H01S5/02415
by using a thermo-electric cooler [TEC]
H01S5/02423
Liquid cooling
H01S5/0243
Laser is immersed in the coolant
H01S5/02438
Characterized by cooling of elements other than the laser
H01S5/02446
Cooling being separate from the laser cooling
H01S5/02453
Heating
H01S5/02461
Structure or details of the laser chip to manipulate the heat flow
H01S5/02469
Passive cooling
H01S5/02476
Heat spreaders
H01S5/02484
Sapphire or diamond heat spreaders
H01S5/02492
CuW heat spreaders
H01S5/026
Monolithically integrated components
H01S5/0261
Non-optical elements
H01S5/0262
Photo-diodes
H01S5/0264
for monitoring the laser-output
H01S5/0265
Intensity modulators
H01S5/0267
Integrated focusing lens
H01S5/0268
Integrated waveguide grating router
H01S5/028
Coatings; Treatment of the laser facets
H01S5/0281
Coatings made of semiconductor materials
H01S5/0282
Passivation layers or treatments
H01S5/0283
Optically inactive coating on the facet
H01S5/0284
Coatings with a temperature dependent reflectivity
H01S5/0285
Coatings with a controllable reflectivity
H01S5/0286
Coatings with a reflectivity that is not constant over the facets
H01S5/0287
Facet reflectivity
H01S5/0288
Detuned facet reflectivity
H01S5/04
Processes or apparatus for excitation
H01S5/041
Optical pumping
H01S5/042
Electrical excitation; Circuits therefor
H01S5/0421
characterised by the semiconducting contacting layers
H01S5/0422
with n- and p-contacts on the same side of the active layer
H01S5/0424
lateral current injection
H01S5/0425
Electrodes
H01S5/0427
for applying modulation to the laser
H01S5/0428
for applying pulses to the laser
H01S5/06
Arrangements for controlling the laser output parameters
H01S5/0601
comprising an absorbing region
H01S5/0602
which is an umpumped part of the active layer
H01S5/0604
comprising a non-linear region
H01S5/0605
Self doubling
H01S5/0607
by varying physical parameters other than the potential of the electrodes
H01S5/0608
controlled by light
H01S5/0609
acting on an absorbing region
H01S5/0611
wavelength convectors
H01S5/0612
controlled by temperature
H01S5/0614
controlled by electric field, i.e whereby an additional electric field is used to tune the bandgap
H01S5/0615
Q-switching
H01S5/0617
using memorised or pre-programmed laser characteristics
H01S5/0618
Details on the linewidth enhancement parameter alpha
H01S5/062
by varying the potential of the electrodes
H01S5/06203
Transistor-type lasers
H01S5/06206
Controlling the frequency of the radiation
H01S5/06209
in single-section lasers
H01S5/06213
Amplitude modulation
H01S5/06216
Pulse modulation or generation
H01S5/0622
Controlling the frequency of the radiation
H01S5/06223
using delayed or positive feedback
H01S5/06226
Modulation at ultra-high frequencies
H01S5/0623
using the beating between two closely spaced optical frequencies
H01S5/06233
Controlling other output parameters than intensity or frequency
H01S5/06236
controlling the polarisation
H01S5/0624
controlling the near- or far field
H01S5/06243
controlling the position or direction of the emitted beam
H01S5/06246
controlling the phase
H01S5/0625
in multi-section lasers
H01S5/06251
Amplitude modulation
H01S5/06253
Pulse modulation
H01S5/06255
Controlling the frequency of the radiation
H01S5/06256
with DBR-structure
H01S5/06258
with DFB-structure
H01S5/065
Mode locking Mode suppression Mode selection; Self pulsating
H01S5/0651
Mode control
H01S5/0652
Coherence lowering or collapse
H01S5/0653
Mode suppression
H01S5/0654
Single longitudinal mode emission
H01S5/0655
Single transverse or lateral mode emission
H01S5/0656
Seeding
H01S5/0657
Mode-locking, i.e.generation of pulses at a frequency corresponding to a roundtrip in the cavity
H01S5/0658
Self-pulsating
H01S5/068
Stabilisation of laser output parameters
H01S5/06804
by monitoring an external parameter
H01S5/06808
by monitoring the electrical laser parameters
H01S5/06812
by monitoring or fixing the threshold current or other specific points of the L-I or V-I characteristics
H01S5/06817
Noise reduction
H01S5/06821
Stabilising other output parameters than intensity or frequency
H01S5/06825
Protecting the laser
H01S5/0683
by monitoring the optical output parameters
H01S5/06832
Stabilising during amplitude modulation
H01S5/06835
Stabilising during pulse modulation or generation
H01S5/06837
Stabilising otherwise than by an applied electric field or current
H01S5/0687
Stabilising the frequency of the laser
H01S5/10
Construction or shape of the optical resonator
H01S5/1003
Waveguide having a modified shape along the axis
H01S5/1007
Branched waveguides
H01S5/101
Curved waveguide
H01S5/1014
Tapered waveguide
H01S5/1017
Waveguide having a void for insertion of materials to change optical properties
H01S5/1021
Coupled cavities
H01S5/1025
Extended cavities
H01S5/1028
Coupling to elements in the cavity
H01S5/1032
Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
H01S5/1035
Forward coupled structures [DFC]
H01S5/1039
Details on the cavity length
H01S5/1042
Optical microcavities
H01S5/1046
Comprising interactions between photons and plasmons
H01S5/105
Comprising a photonic bandgap structure
H01S5/1053
Comprising an active region having a varying composition or cross section in a specific direction
H01S5/1057
varying composition along the optical axis
H01S5/106
varying thickness along the optical axis
H01S5/1064
varying width along the optical axis
H01S5/1067
comprising nanoparticles
H01S5/1071
Ring-lasers
H01S5/1075
Disk lasers with special modes
H01S5/1078
with means to control the spontaneous emission
H01S5/1082
with a special facet structure
H01S5/1085
Oblique facets
H01S5/1089
Unstable resonators
H01S5/1092
Multi-wavelength lasing
H01S5/1096
in a single cavity
H01S5/12
the resonator having a periodic structure
H01S5/1203
over only a part of the length of the active region
H01S5/1206
having a non constant or multiplicity of periods
H01S5/1209
Sampled grating
H01S5/1212
Chirped grating
H01S5/1215
Multiplicity of periods
H01S5/1218
in superstructured configuration
H01S5/1221
Detuning between Bragg wavelength and gain maximum
H01S5/1225
with a varying coupling constant along the optical axis
H01S5/1228
DFB lasers with a complex coupled grating
H01S5/1231
Grating growth or overgrowth details
H01S5/1234
Actively induced grating
H01S5/1237
Lateral grating
H01S5/124
incorporating phase shifts
H01S5/1243
by other means than a jump in the grating period
H01S5/1246
plurality of phase shifts
H01S5/125
Distributed Bragg reflector lasers (DBR-lasers)
H01S5/14
External cavity lasers
H01S5/141
using a wavelength selective device
H01S5/142
which comprises an additional resonator
H01S5/143
Littman-Metcalf configuration
H01S5/145
Phase conjugate mirrors
H01S5/146
using a fiber as external cavity
H01S5/147
having specially shaped fibre
H01S5/148
using a Talbot cavity
H01S5/16
Window-type lasers
H01S5/162
with window regions made by diffusion or disordening of the active layer
H01S5/164
with window regions comprising semiconductor material with a wider bandgap than the active layer
H01S5/166
with window regions comprising non-semiconducting materials
H01S5/168
with window regions comprising current blocking layers
H01S5/18
Surface-emitting lasers (SE-lasers)
H01S5/183
having a vertical cavity (VCSE-lasers)
H01S5/18302
comprising an integrated optical modulator
H01S5/18305
with emission through the substrate
H01S5/18308
having a special structure for lateral current or light confinement
H01S5/18311
using selective oxidation
H01S5/18313
by oxidizing at least one of the DBR layers
H01S5/18316
Airgap confined
H01S5/18319
comprising a periodical structure in lateral directions
H01S5/18322
Position of the structure
H01S5/18325
Between active layer and substrate
H01S5/18327
Structure being part of a DBR
H01S5/1833
with more than one structure
H01S5/18333
only above the active layer
H01S5/18336
only below the active layer
H01S5/18338
Non-circular shape of the structure
H01S5/18341
Intra-cavity contacts
H01S5/18344
characterized by the mesa
H01S5/18347
Mesa comprising active layer
H01S5/1835
Non-circular mesa
H01S5/18352
Mesa with inclined sidewall
H01S5/18355
having a defined polarisation
H01S5/18358
containing spacer layers to adjust the phase of the light wave in the cavity
H01S5/18361
Structure of the reflectors
H01S5/18363
comprising air layers
H01S5/18366
Membrane DBR
H01S5/18369
based on dielectric materials
H01S5/18372
by native oxidation
H01S5/18375
based on metal reflectors
H01S5/18377
comprising layers of different kind of materials
H01S5/1838
Reflector bonded by wafer fusion or by an intermediate compound
H01S5/18383
with periodic active regions at nodes or maxima of light intensity
H01S5/18386
Details of the emission surface for influencing the near- or far-field
H01S5/18388
Lenses
H01S5/18391
Aperiodic structuring to influence the near- or far-field distribution
H01S5/18394
Apertures
H01S5/18397
Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
H01S5/187
using a distributed Bragg reflector (SE-DBR-lasers)
H01S5/20
Structure or shape of the semi-conductor body to guide the optical wave; Confining structures perpendicular to the optical axis
H01S5/2004
Confining in the direction perpendicular to the layer structure
H01S5/2009
electron barrier layers
H01S5/2013
MQW barrier reflection layers
H01S5/2018
Optical confinement
H01S5/2022
Absorbing region or layer parallel to the active layer
H01S5/2027
Reflecting region or layer, parallel to the active layer
H01S5/2031
characterized by special waveguide layers
H01S5/2036
Broad area laserse
H01S5/204
Strongly index guided structures
H01S5/2045
employing free standing waveguides or air gap confinement
H01S5/205
Antiguided structures
H01S5/2054
Methods of obtaining the confinement
H01S5/2059
by means of particular conductivity zones
H01S5/2063
obtained by particle bombardment
H01S5/2068
obtained by radiation treatment or annealing
H01S5/2072
obtained by vacancy induced diffusion
H01S5/2077
using lateral bandgap control during growth
H01S5/2081
using special etching techniques
H01S5/2086
lateral etch control
H01S5/209
special etch stop layers
H01S5/2095
using melting or mass transport
H01S5/22
having a ridge or stripe structure
H01S5/2201
in a specific crystallographic orientation
H01S5/2202
by making a groove in the upper laser structure
H01S5/2203
with a transverse junction stripe [TJS] structure
H01S5/2205
comprising special burying or current confinement layers
H01S5/2206
based on III-V materials
H01S5/2207
GaAsP based
H01S5/2209
GaInP based
H01S5/221
containing aluminium
H01S5/2211
based on II-VI materials
H01S5/2213
based on polyimide or resin
H01S5/2214
based on oxides or nitrides
H01S5/2215
using native oxidation of semiconductor layers
H01S5/2216
nitrides
H01S5/2218
having special optical properties
H01S5/2219
absorbing
H01S5/222
having a refractive index lower than that of the cladding layers or outer guiding layers
H01S5/2222
having special electric properties
H01S5/2223
hetero barrier blocking layers
H01S5/2224
semi-insulating semiconductors
H01S5/2226
semiconductors with a specific doping
H01S5/2227
special thin layer sequence
H01S5/2228
quantum wells
H01S5/223
Buried stripe structure
H01S5/2231
with inner confining structure only between the active layer and the upper electrode
H01S5/2232
with inner confining structure between the active layer and the lower electrode
H01S5/2234
having a structured substrate surface
H01S5/2235
with a protrusion
H01S5/2237
with a non-planar active layer
H01S5/2238
with a terraced structure
H01S5/227
Buried mesa structure; Striped active layer
H01S5/2272
grown by a mask induced selective growth
H01S5/2275
mesa created by etching
H01S5/2277
double channel planar buried heterostructure [DCPBH] laser
H01S5/24
having a grooved structure
H01S5/30
Structure or shape of the active region Materials used for the active region
H01S5/3004
employing a field effect structure for inducing charge-carriers
H01S5/3009
MIS or MOS conffigurations
H01S5/3013
AIIIBV compounds
H01S5/3018
AIIBVI compounds
H01S5/3022
AIVBVI compounds
H01S5/3027
IV compounds
H01S5/3031
Si
H01S5/3036
SiC
H01S5/304
porous Si
H01S5/3045
diamond
H01S5/305
characterised by the doping materials used in the laser structure
H01S5/3054
p-doping
H01S5/3059
in II-VI materials
H01S5/3063
using Mg
H01S5/3068
deep levels
H01S5/3072
Diffusion blocking layer
H01S5/3077
plane dependent doping
H01S5/3081
using amphoteric doping
H01S5/3086
doping of the active layer
H01S5/309
doping of barrier layers that confine charge carriers in the laser structure
H01S5/3095
Tunnel junction
H01S5/32
comprising PN junctions
H01S5/3201
incorporating bulkstrain effects
H01S5/3202
grown on specifically orientated substrates, or using orientation dependent growth
H01S5/3203
on non-planar substrates to create thickness or compositional variations
H01S5/3205
with an active layer having a graded composition in the growth direction
H01S5/3206
ordering or disordering the natural superlattice in ternary or quaternary materials
H01S5/3207
ordered active layer
H01S5/3209
disordered active layer
H01S5/321
having intermediate bandgap layers
H01S5/3211
characterised by special cladding layers
H01S5/3213
asymmetric clading layers
H01S5/3214
comprising materials from other groups of the periodic system than the materials of the active layer
H01S5/3215
graded composition cladding layers
H01S5/3216
quantum well or superlattice cladding layers
H01S5/3218
specially strained cladding layers, other than for strain compensation
H01S5/3219
explicitly Al-free cladding layers
H01S5/322
type-II junctions
H01S5/3222
in AIVBVI compounds
H01S5/3223
IV compounds
H01S5/3224
Si
H01S5/3226
SiC
H01S5/3227
porous Si
H01S5/3228
diamond
H01S5/323
in AIIIBV compounds
H01S5/32308
emitting light at a wavelength less than 900 nm
H01S5/32316
comprising only (Al)GaAs
H01S5/32325
red laser based on InGaP
H01S5/32333
based on InGaAsP
H01S5/32341
blue laser based on GaN or GaP
H01S5/3235
emitting light at a wavelength longer than 1000 nm
H01S5/32358
containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the band-gap srongly in a non-linear way by the bowing effect
H01S5/32366
(In)GaAs with small amount of N
H01S5/32375
In(As)N with small amount of P, or In(As)P with small amount of N
H01S5/32383
small amount of Thallum (TI)
H01S5/32391
based onIn(Ga)(As)P
H01S5/327
in AIIBVI compounds
H01S5/34
comprising quantum well,or supperlattice structures
H01S5/3401
having no PN junction
H01S5/3402
intersubband lasers
H01S5/3403
having a strained layer structure in which the strain performs a special function
H01S5/3404
influencing the polarisation
H01S5/3406
including strain compensation
H01S5/3407
characterised by special barrier layers
H01S5/3408
characterised by specially shaped wells
H01S5/3409
special GRINSCH structures
H01S5/341
Structures having reduced dimensionality, e.g.quantum wires
H01S5/3412
quantum box or quantum dash
H01S5/3413
comprising partially disordered wells or barriers
H01S5/3414
by vacancy induced interdiffusion
H01S5/3415
containing details related to carrier capture times into wells or barriers
H01S5/3416
tunneling through barriers
H01S5/3418
using transitions from higher quantum levels
H01S5/3419
intersubband lasers
H01S5/342
containing short period superlattices [SPS]
H01S5/3421
layer structure of quantum wells to influence the near/far field
H01S5/3422
comprising type-II quantum wells or superlattices
H01S5/3424
comprising freestanding wells
H01S5/3425
comprising couples wells or superlattices
H01S5/3426
in AIVBVI compounds
H01S5/3427
in IV compounds
H01S5/3428
layer orientation perpendicular to the substrate
H01S5/343
in AIIIBV compounds
H01S5/34306
emitting light at a wavelength longer than 1000nm
H01S5/34313
with a well layer having only As as V-compound
H01S5/3432
the whole junction comprising only (AI)GaAs
H01S5/34326
with a well layer based on InGa(Al)P
H01S5/34333
with a well layer based on Ga(In)N or Ga(In)P
H01S5/3434
with a well layer comprising at least both As and P as V-compounds
H01S5/34346
characterised by the materials of the barrier layers
H01S5/34353
based on (AI)GaAs
H01S5/3436
based on InGa(Al)P
H01S5/34366
based on InGa(Al)AS
H01S5/34373
based on InGa(Al)AsP
H01S5/3438
based on In(Al)P
H01S5/34386
explicitly Al-free
H01S5/34393
not only based on AIIIBV compounds
H01S5/347
in AIIBVI compounds
H01S5/36
comprising organic materials
H01S5/40
Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
H01S5/4006
Injection locking
H01S5/4012
Beam combining
H01S5/4018
Lasers electrically in series
H01S5/4025
Array arrangements
H01S5/4031
Edge-emitting structures
H01S5/4037
with active layers in more than one orientation
H01S5/4043
with vertically stacked active layers
H01S5/405
Two-dimensional arrays
H01S5/4056
emitting light in more than one direction
H01S5/4062
with an external cavity or using internal filters
H01S5/4068
with lateral coupling by axially offset or by merging waveguides
H01S5/4075
Beam steering
H01S5/4081
Near-or far field control
H01S5/4087
emitting more than one wavelength
H01S5/4093
Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion
H01S5/42
Arrays of surface emitting lasers
H01S5/423
having a vertical cavity
H01S5/426
Vertically stacked cavities
H01S5/50
Amplifier structures not provided for in groups H01S5/02 - H01S5/30
H01S5/5009
the arrangement being polarisation-insensitive
H01S5/5018
using two or more amplifiers or multiple passes through the same amplifier
H01S5/5027
Concatenated amplifiers
H01S5/5036
the arrangement being polarisation-selective
H01S5/5045
the arrangement having a frequency filtering function
H01S5/5054
in which the wavelength is transformed by non-linear properties of the active medium
H01S5/5063
operating above threshold
H01S5/5072
Gain clamping
H01S5/5081
specifically standing wave amplifiers
H01S5/509
Wavelength converting amplifier
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Self-interferometry based sensor systems capable of generating dept...
Patent number
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Issue date
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H01 - BASIC ELECTRIC ELEMENTS
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System and method for optical feedback stabilized semiconductor fre...
Patent number
12,368,281
Issue date
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The Trustees of Princeton University
Chu C. Teng
H01 - BASIC ELECTRIC ELEMENTS
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Semiconductor device and method
Patent number
12,368,280
Issue date
Jul 22, 2025
Taiwan Semiconductor Manufacturing Company, Ltd
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H01 - BASIC ELECTRIC ELEMENTS
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Airplane configured with a high intensity pulse laser generation sy...
Patent number
12,368,279
Issue date
Jul 22, 2025
Blue Laser Fusion, Inc.
Shuji Nakamura
H01 - BASIC ELECTRIC ELEMENTS
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O-band silicon-based high-speed semiconductor laser diode for optic...
Patent number
12,368,282
Issue date
Jul 22, 2025
FuJian Z.K. Litecore, Ltd.
Zheng Qun Xue
H01 - BASIC ELECTRIC ELEMENTS
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Broadband arbitrary wavelength multichannel laser source
Patent number
12,368,283
Issue date
Jul 22, 2025
Rockley Photonics Limited
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H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Focusing optics for use with semiconductor lasers for imaging appli...
Patent number
12,366,815
Issue date
Jul 22, 2025
Xerox Corporation
Joerg Martini
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Photonics optoelectrical system
Patent number
12,366,705
Issue date
Jul 22, 2025
THE RESEARCH FOUNDATION FOR THE STATE UNIVERISTY OF NEWYORK
William Charles
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Driver circuit for an addressable array of optical emitters
Patent number
12,366,638
Issue date
Jul 22, 2025
Lumentum Operations LLC
Mikhail Dolganov
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Patent Grant
Systems and methods for free space optical injection locking
Patent number
12,368,277
Issue date
Jul 22, 2025
Cable Television Laboratories, Inc.
Zhensheng Jia
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Semiconductor laser driving apparatus, electronic equipment, and ma...
Patent number
12,362,534
Issue date
Jul 15, 2025
SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Hirohisa Yasukawa
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Patent Grant
Optical element, optical element monitoring system and method, acti...
Patent number
12,362,535
Issue date
Jul 15, 2025
Huawei Technologies Co., Ltd.
Bin Shi
G06 - COMPUTING CALCULATING COUNTING
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Patent Grant
Systems for optical power control for laser safety of a time-of-fli...
Patent number
12,362,538
Issue date
Jul 15, 2025
Zebra Technologies Corporation
Vladimir Gurevich
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Patent Grant
Laser device, and laser waveform control method
Patent number
12,362,539
Issue date
Jul 15, 2025
Hamamatsu Photonics K.K.
Takashi Kurita
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Light emitting element
Patent number
12,362,540
Issue date
Jul 15, 2025
Sony Corporation
Tatsushi Hamaguchi
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Methods for incorporating a control structure within a vertical cav...
Patent number
12,362,541
Issue date
Jul 15, 2025
Lumentum Operations LLC
Ajit Vijay Barve
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Patent Grant
Driver circuit and method for controlling a light source
Patent number
12,362,536
Issue date
Jul 15, 2025
Analog Devices International Unlimited Company
Sivanendra Selvanayagam
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Evanescent couplers and related methods
Patent number
12,360,312
Issue date
Jul 15, 2025
Cisco Technology, Inc.
Tymon Barwicz
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Device and method for optical spectrum measurement
Patent number
12,359,970
Issue date
Jul 15, 2025
PILOT PHOTONICS LTD.
Frank Smyth
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Driver circuit for evaluation of an optical emitter
Patent number
12,362,537
Issue date
Jul 15, 2025
Lumentum Operations LLC
Mikhail Dolganov
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Optical semiconductor device
Patent number
12,360,405
Issue date
Jul 15, 2025
Denso Corporation
Yuki Kamata
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Laser emitter including nanowires
Patent number
12,355,214
Issue date
Jul 8, 2025
Microsoft Technology Licensing, LLC
Sergei V. Gronin
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Optical device testing system
Patent number
12,352,901
Issue date
Jul 8, 2025
Lumentum Operations LLC
Suning Xie
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Light emitting device, projector, and display
Patent number
12,355,206
Issue date
Jul 8, 2025
Seiko Epson Corporation
Takashi Miyata
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Efficient laser system
Patent number
12,355,207
Issue date
Jul 8, 2025
II-VI DELAWARE, INC.
René Todt
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Semiconductor waveguide optical gain device with lateral current co...
Patent number
12,355,210
Issue date
Jul 8, 2025
HieFo Corporation
Henry A. Blauvelt
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Reducing laser diode temperature swings in heat-assisted magnetic r...
Patent number
12,354,630
Issue date
Jul 8, 2025
Western Digital Technologies, Inc.
Sukumar Rajauria
G11 - INFORMATION STORAGE
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Patent Grant
Quantum dot lasers and methods for making the same
Patent number
12,355,213
Issue date
Jul 8, 2025
The Regents of the University of California
John E. Bowers
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Variable beam spacing, timing, and power for vehicle sensors
Patent number
12,352,895
Issue date
Jul 8, 2025
Waymo LLC
Benjamin Ingram
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Tunable VCSEL with strain compensated semiconductor DBR
Patent number
12,355,208
Issue date
Jul 8, 2025
Excelitas Technologies Corp.
Mark E. Kuznetsov
H01 - BASIC ELECTRIC ELEMENTS
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20250237491
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Jul 24, 2025
ams International AG
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G06 - COMPUTING CALCULATING COUNTING
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20250239837
Publication date
Jul 24, 2025
Nichia Corporation.
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H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
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20250239836
Publication date
Jul 24, 2025
NUVOTON TECHNOLOGY CORPORATION JAPAN
Shinji YOSHIDA
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
MOUNTING SUBSTRATE, LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING...
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20250241094
Publication date
Jul 24, 2025
Nichia Corporation.
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SURFACE EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND METHOD OF MANU...
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20250239834
Publication date
Jul 24, 2025
SONY GROUP CORPORATION
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SELF-MIXING INTERFERENCE BASED SENSORS FOR CHARACTERIZING TOUCH INPUT
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20250237492
Publication date
Jul 24, 2025
Apple Inc.
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G06 - COMPUTING CALCULATING COUNTING
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WAVELENGTH-TUNABLE LIGHT SOURCE DEVICE AND WAVELENGTH CONTROL METHOD
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20250239835
Publication date
Jul 24, 2025
NEC Corporation
Kenji Mizutani
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
Semiconductor Optical Amplifier for Data Distribution
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20250239838
Publication date
Jul 24, 2025
SemiNex Corporation
Sidi Aboujja
G02 - OPTICS
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LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUB...
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20250241089
Publication date
Jul 24, 2025
Jie Piao
H01 - BASIC ELECTRIC ELEMENTS
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METHODS AND APPARATUSES FOR SORTING TARGET PARTICLES
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20250235862
Publication date
Jul 24, 2025
Orca Biosystems, Inc.
Ivan K. Dimov
B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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SEMICONDUCTOR LASER COUPLING, TRANSMISSION, AND IMAGING APPARATUS U...
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20250239831
Publication date
Jul 24, 2025
BEIJING LASERCONN TECH CO., LTD.
Li YAN
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LIGHT EMITTING DEVICE, LIGHT EMITTING APPARATUS, AND MEASURING APPA...
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20250239832
Publication date
Jul 24, 2025
FUJIFILM Business Innovation Corp.
Daisuke IGUCHI
H01 - BASIC ELECTRIC ELEMENTS
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DIRECT CONTROL ON LASER FREQUENCY FOR DUAL-PULSE DISTRIBUTED ACOUST...
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20250239833
Publication date
Jul 24, 2025
VIAVI SOLUTIONS INC.
Vincent LECOEUCHE
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
PACKAGE STRUCTURE OF OPTICAL EMISSION MODULE AND PREPARATION METHOD
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20250233385
Publication date
Jul 17, 2025
TRIPLE WIN TECHNOLOGY (SHENZHEN) CO.LTD.
Hsin-Yen Hsu
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
VERTICALLY INTEGRATED ELECTRO-ABSORPTION MODULATED LASERS AND METHO...
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20250233387
Publication date
Jul 17, 2025
ElectroPhotonic-IC Inc.
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H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
SEMICONDUCTOR LASER, SEMICONDUCTOR LASER DEVICE, AND SEMICONDUCTOR...
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20250233390
Publication date
Jul 17, 2025
Mitsubishi Electric Corporation
Hiroaki MAEHARA
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Patent Application
OPTOELECTRONIC CHIP INTEGRATED SYSTEM AND MANUFACTURING METHOD THEREOF
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20250233383
Publication date
Jul 17, 2025
ZHEJIANG LAB
Shaoliang YU
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LIGHT EMITTING DEVICE
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20250233386
Publication date
Jul 17, 2025
Nichia Corporation.
Soichiro MIURA
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
VERTICALLY INTEGRATED ELECTRO-ABSORPTION MODULATED LASERS AND METHO...
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20250233388
Publication date
Jul 17, 2025
ElectroPhotonic-IC Inc.
Lawrence E. TAROF
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
SURFACE EMITTING LASER, METHOD FOR FABRICATING SURFACE EMITTING LASER
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20250233389
Publication date
Jul 17, 2025
SANOH INDUSTRIAL CO., LTD.
Srinivas Gandrothula
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
WAVEGUIDE STRUCTURE FOR A PHOTONIC INTEGRATED CIRCUIT
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20250231339
Publication date
Jul 17, 2025
SMART PHOTONICS HOLDING B.V.
Erik DEN HAAN
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
CONVERSION ELEMENT WITH POROUS LAYER
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20250233384
Publication date
Jul 17, 2025
Lumileds LLC
Hans-Helmut BECHTEL
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
MULTI-JUNCTION LASER-DIODE MODULES CONFIGURED FOR FIBER-COUPLING
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20250233391
Publication date
Jul 17, 2025
Electro-Optics Technology, Incorporated
David G. SCERBAK
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
OPTOELECTRONIC DEVICE
Publication number
20250226637
Publication date
Jul 10, 2025
ams-OSRAM International GmbH
Tansen VARGHESE
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
NANO BESSEL LASER BEAM EMITTER AND METHOD FOR MANUFACTURING THE SAME
Publication number
20250226641
Publication date
Jul 10, 2025
SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY
Xiaowei SUN
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
OPTICAL MODULE AND METHOD FOR PRODUCING SAME
Publication number
20250226636
Publication date
Jul 10, 2025
Mitsubishi Electric Corporation
Yutaka YONEDA
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
SURFACE EMITTING LASER AND METHOD FOR MANUFACTURING THE SAME
Publication number
20250226640
Publication date
Jul 10, 2025
Kabushiki Kaisha Toshiba
Rei HASHIMOTO
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND ELECTRONI...
Publication number
20250226639
Publication date
Jul 10, 2025
SONY GROUP CORPORATION
EIJI NAKAYAMA
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
LASER DEVICE AND METHOD FOR OPERATING A LASER DEVICE
Publication number
20250226638
Publication date
Jul 10, 2025
ams-OSRAM International GmbH
Bilal SAIF
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
SILICON PHOTONICS CHIP AND METHOD OF MANUFACTURING THE SAME
Publication number
20250226369
Publication date
Jul 10, 2025
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
SangHwa YOO
H01 - BASIC ELECTRIC ELEMENTS