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H01S5/00
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H01S5/0014Measuring characteristics or properties thereof
H01S5/0021Degradation or life time measurements
H01S5/0028Laser diodes used as detectors
H01S5/0035Simulations of laser characteristics
H01S5/0042On wafer testing
H01S5/005Optical devices external to the laser cavity, specially adapted therefor
H01S5/0057Temporal shaping
H01S5/0064Anti-reflection devices
H01S5/0071Beam steering
H01S5/0078Frequency filtering
H01S5/0085Modulating the output
H01S5/0092Nonlinear frequency conversion
H01S5/02Structural details or components not essential to laser action
H01S5/0201Separation of the wafer into individual elements
H01S5/0202Cleaving
H01S5/0203Etching
H01S5/0205during growth of the semiconductor body
H01S5/0206Substrates
H01S5/0207Substrates having a special shape
H01S5/0208Semi-insulating substrates
H01S5/021Silicon based substrates
H01S5/0211Substrates made of ternary or quaternary compounds
H01S5/0212with a graded composition
H01S5/0213Sapphire, quartz or diamond based substrates
H01S5/0215Bonding to the substrate
H01S5/0216using an intermediate compound
H01S5/0217Removal of the substrate
H01S5/0218Substrates comprising semiconducting materials from different groups of the periodic system than the active layer
H01S5/022Mountings Housings
H01S5/02204including a getter material to absorb contaminations
H01S5/02208Shape of the housing
H01S5/02212Can-type
H01S5/02216Butterfly-type
H01S5/0222filled with special gases
H01S5/02224Oxygen is contained in the housing
H01S5/02228filled with a resin, or the complete housing being made of resin
H01S5/02232filled with a liquid
H01S5/02236Mounts or sub-mounts
H01S5/0224Up-side down mounting
H01S5/02244Lead-frames
H01S5/02248Mechanically integrated components on a mount or an optical micro-bench
H01S5/02252Relative positioning of laser diode and optical components
H01S5/02256Details of fixing the laser diode on the mount
H01S5/0226using an adhesive
H01S5/02264by clamping
H01S5/02268Positioning
H01S5/02272using soldering
H01S5/02276Wire-bonding details
H01S5/0228Out-coupling light
H01S5/02284with an optical fibre
H01S5/02288with a lens
H01S5/02292with a beam deflecting element
H01S5/02296Details of a window
H01S5/024Cooling arrangements
H01S5/02407Active cooling
H01S5/02415by using a thermo-electric cooler [TEC]
H01S5/02423Liquid cooling
H01S5/0243Laser is immersed in the coolant
H01S5/02438Characterized by cooling of elements other than the laser
H01S5/02446Cooling being separate from the laser cooling
H01S5/02453Heating
H01S5/02461Structure or details of the laser chip to manipulate the heat flow
H01S5/02469Passive cooling
H01S5/02476Heat spreaders
H01S5/02484Sapphire or diamond heat spreaders
H01S5/02492CuW heat spreaders
H01S5/026Monolithically integrated components
H01S5/0261Non-optical elements
H01S5/0262Photo-diodes
H01S5/0264for monitoring the laser-output
H01S5/0265Intensity modulators
H01S5/0267Integrated focusing lens
H01S5/0268Integrated waveguide grating router
H01S5/028Coatings; Treatment of the laser facets
H01S5/0281Coatings made of semiconductor materials
H01S5/0282Passivation layers or treatments
H01S5/0283Optically inactive coating on the facet
H01S5/0284Coatings with a temperature dependent reflectivity
H01S5/0285Coatings with a controllable reflectivity
H01S5/0286Coatings with a reflectivity that is not constant over the facets
H01S5/0287Facet reflectivity
H01S5/0288Detuned facet reflectivity
H01S5/04Processes or apparatus for excitation
H01S5/041Optical pumping
H01S5/042Electrical excitation; Circuits therefor
H01S5/0421characterised by the semiconducting contacting layers
H01S5/0422with n- and p-contacts on the same side of the active layer
H01S5/0424lateral current injection
H01S5/0425Electrodes
H01S5/0427for applying modulation to the laser
H01S5/0428for applying pulses to the laser
H01S5/06Arrangements for controlling the laser output parameters
H01S5/0601comprising an absorbing region
H01S5/0602which is an umpumped part of the active layer
H01S5/0604comprising a non-linear region
H01S5/0605Self doubling
H01S5/0607by varying physical parameters other than the potential of the electrodes
H01S5/0608controlled by light
H01S5/0609acting on an absorbing region
H01S5/0611wavelength convectors
H01S5/0612controlled by temperature
H01S5/0614controlled by electric field, i.e whereby an additional electric field is used to tune the bandgap
H01S5/0615Q-switching
H01S5/0617using memorised or pre-programmed laser characteristics
H01S5/0618Details on the linewidth enhancement parameter alpha
H01S5/062by varying the potential of the electrodes
H01S5/06203Transistor-type lasers
H01S5/06206Controlling the frequency of the radiation
H01S5/06209in single-section lasers
H01S5/06213Amplitude modulation
H01S5/06216Pulse modulation or generation
H01S5/0622Controlling the frequency of the radiation
H01S5/06223using delayed or positive feedback
H01S5/06226Modulation at ultra-high frequencies
H01S5/0623using the beating between two closely spaced optical frequencies
H01S5/06233Controlling other output parameters than intensity or frequency
H01S5/06236controlling the polarisation
H01S5/0624controlling the near- or far field
H01S5/06243controlling the position or direction of the emitted beam
H01S5/06246controlling the phase
H01S5/0625in multi-section lasers
H01S5/06251Amplitude modulation
H01S5/06253Pulse modulation
H01S5/06255Controlling the frequency of the radiation
H01S5/06256with DBR-structure
H01S5/06258with DFB-structure
H01S5/065Mode locking Mode suppression Mode selection; Self pulsating
H01S5/0651Mode control
H01S5/0652Coherence lowering or collapse
H01S5/0653Mode suppression
H01S5/0654Single longitudinal mode emission
H01S5/0655Single transverse or lateral mode emission
H01S5/0656Seeding
H01S5/0657Mode-locking, i.e.generation of pulses at a frequency corresponding to a roundtrip in the cavity
H01S5/0658Self-pulsating
H01S5/068Stabilisation of laser output parameters
H01S5/06804by monitoring an external parameter
H01S5/06808by monitoring the electrical laser parameters
H01S5/06812by monitoring or fixing the threshold current or other specific points of the L-I or V-I characteristics
H01S5/06817Noise reduction
H01S5/06821Stabilising other output parameters than intensity or frequency
H01S5/06825Protecting the laser
H01S5/0683by monitoring the optical output parameters
H01S5/06832Stabilising during amplitude modulation
H01S5/06835Stabilising during pulse modulation or generation
H01S5/06837Stabilising otherwise than by an applied electric field or current
H01S5/0687Stabilising the frequency of the laser
H01S5/10Construction or shape of the optical resonator
H01S5/1003Waveguide having a modified shape along the axis
H01S5/1007Branched waveguides
H01S5/101Curved waveguide
H01S5/1014Tapered waveguide
H01S5/1017Waveguide having a void for insertion of materials to change optical properties
H01S5/1021Coupled cavities
H01S5/1025Extended cavities
H01S5/1028Coupling to elements in the cavity
H01S5/1032Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
H01S5/1035Forward coupled structures [DFC]
H01S5/1039Details on the cavity length
H01S5/1042Optical microcavities
H01S5/1046Comprising interactions between photons and plasmons
H01S5/105Comprising a photonic bandgap structure
H01S5/1053Comprising an active region having a varying composition or cross section in a specific direction
H01S5/1057varying composition along the optical axis
H01S5/106varying thickness along the optical axis
H01S5/1064varying width along the optical axis
H01S5/1067comprising nanoparticles
H01S5/1071Ring-lasers
H01S5/1075Disk lasers with special modes
H01S5/1078with means to control the spontaneous emission
H01S5/1082with a special facet structure
H01S5/1085Oblique facets
H01S5/1089Unstable resonators
H01S5/1092Multi-wavelength lasing
H01S5/1096in a single cavity
H01S5/12the resonator having a periodic structure
H01S5/1203over only a part of the length of the active region
H01S5/1206having a non constant or multiplicity of periods
H01S5/1209Sampled grating
H01S5/1212Chirped grating
H01S5/1215Multiplicity of periods
H01S5/1218in superstructured configuration
H01S5/1221Detuning between Bragg wavelength and gain maximum
H01S5/1225with a varying coupling constant along the optical axis
H01S5/1228DFB lasers with a complex coupled grating
H01S5/1231Grating growth or overgrowth details
H01S5/1234Actively induced grating
H01S5/1237Lateral grating
H01S5/124incorporating phase shifts
H01S5/1243by other means than a jump in the grating period
H01S5/1246plurality of phase shifts
H01S5/125Distributed Bragg reflector lasers (DBR-lasers)
H01S5/14External cavity lasers
H01S5/141using a wavelength selective device
H01S5/142which comprises an additional resonator
H01S5/143Littman-Metcalf configuration
H01S5/145Phase conjugate mirrors
H01S5/146using a fiber as external cavity
H01S5/147having specially shaped fibre
H01S5/148using a Talbot cavity
H01S5/16Window-type lasers
H01S5/162with window regions made by diffusion or disordening of the active layer
H01S5/164with window regions comprising semiconductor material with a wider bandgap than the active layer
H01S5/166with window regions comprising non-semiconducting materials
H01S5/168with window regions comprising current blocking layers
H01S5/18Surface-emitting lasers (SE-lasers)
H01S5/183having a vertical cavity (VCSE-lasers)
H01S5/18302comprising an integrated optical modulator
H01S5/18305with emission through the substrate
H01S5/18308having a special structure for lateral current or light confinement
H01S5/18311using selective oxidation
H01S5/18313by oxidizing at least one of the DBR layers
H01S5/18316Airgap confined
H01S5/18319comprising a periodical structure in lateral directions
H01S5/18322Position of the structure
H01S5/18325Between active layer and substrate
H01S5/18327Structure being part of a DBR
H01S5/1833with more than one structure
H01S5/18333only above the active layer
H01S5/18336only below the active layer
H01S5/18338Non-circular shape of the structure
H01S5/18341Intra-cavity contacts
H01S5/18344characterized by the mesa
H01S5/18347Mesa comprising active layer
H01S5/1835Non-circular mesa
H01S5/18352Mesa with inclined sidewall
H01S5/18355having a defined polarisation
H01S5/18358containing spacer layers to adjust the phase of the light wave in the cavity
H01S5/18361Structure of the reflectors
H01S5/18363comprising air layers
H01S5/18366Membrane DBR
H01S5/18369based on dielectric materials
H01S5/18372by native oxidation
H01S5/18375based on metal reflectors
H01S5/18377comprising layers of different kind of materials
H01S5/1838Reflector bonded by wafer fusion or by an intermediate compound
H01S5/18383with periodic active regions at nodes or maxima of light intensity
H01S5/18386Details of the emission surface for influencing the near- or far-field
H01S5/18388Lenses
H01S5/18391Aperiodic structuring to influence the near- or far-field distribution
H01S5/18394Apertures
H01S5/18397Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
H01S5/187using a distributed Bragg reflector (SE-DBR-lasers)
H01S5/20Structure or shape of the semi-conductor body to guide the optical wave; Confining structures perpendicular to the optical axis
H01S5/2004Confining in the direction perpendicular to the layer structure
H01S5/2009electron barrier layers
H01S5/2013MQW barrier reflection layers
H01S5/2018Optical confinement
H01S5/2022Absorbing region or layer parallel to the active layer
H01S5/2027Reflecting region or layer, parallel to the active layer
H01S5/2031characterized by special waveguide layers
H01S5/2036Broad area laserse
H01S5/204Strongly index guided structures
H01S5/2045employing free standing waveguides or air gap confinement
H01S5/205Antiguided structures
H01S5/2054Methods of obtaining the confinement
H01S5/2059by means of particular conductivity zones
H01S5/2063obtained by particle bombardment
H01S5/2068obtained by radiation treatment or annealing
H01S5/2072obtained by vacancy induced diffusion
H01S5/2077using lateral bandgap control during growth
H01S5/2081using special etching techniques
H01S5/2086lateral etch control
H01S5/209special etch stop layers
H01S5/2095using melting or mass transport
H01S5/22having a ridge or stripe structure
H01S5/2201in a specific crystallographic orientation
H01S5/2202by making a groove in the upper laser structure
H01S5/2203with a transverse junction stripe [TJS] structure
H01S5/2205comprising special burying or current confinement layers
H01S5/2206based on III-V materials
H01S5/2207GaAsP based
H01S5/2209GaInP based
H01S5/221containing aluminium
H01S5/2211based on II-VI materials
H01S5/2213based on polyimide or resin
H01S5/2214based on oxides or nitrides
H01S5/2215using native oxidation of semiconductor layers
H01S5/2216nitrides
H01S5/2218having special optical properties
H01S5/2219absorbing
H01S5/222having a refractive index lower than that of the cladding layers or outer guiding layers
H01S5/2222having special electric properties
H01S5/2223hetero barrier blocking layers
H01S5/2224semi-insulating semiconductors
H01S5/2226semiconductors with a specific doping
H01S5/2227special thin layer sequence
H01S5/2228quantum wells
H01S5/223Buried stripe structure
H01S5/2231with inner confining structure only between the active layer and the upper electrode
H01S5/2232with inner confining structure between the active layer and the lower electrode
H01S5/2234having a structured substrate surface
H01S5/2235with a protrusion
H01S5/2237with a non-planar active layer
H01S5/2238with a terraced structure
H01S5/227Buried mesa structure; Striped active layer
H01S5/2272grown by a mask induced selective growth
H01S5/2275mesa created by etching
H01S5/2277double channel planar buried heterostructure [DCPBH] laser
H01S5/24having a grooved structure
H01S5/30Structure or shape of the active region Materials used for the active region
H01S5/3004employing a field effect structure for inducing charge-carriers
H01S5/3009MIS or MOS conffigurations
H01S5/3013AIIIBV compounds
H01S5/3018AIIBVI compounds
H01S5/3022AIVBVI compounds
H01S5/3027IV compounds
H01S5/3031Si
H01S5/3036SiC
H01S5/304porous Si
H01S5/3045diamond
H01S5/305characterised by the doping materials used in the laser structure
H01S5/3054p-doping
H01S5/3059in II-VI materials
H01S5/3063using Mg
H01S5/3068deep levels
H01S5/3072Diffusion blocking layer
H01S5/3077plane dependent doping
H01S5/3081using amphoteric doping
H01S5/3086doping of the active layer
H01S5/309doping of barrier layers that confine charge carriers in the laser structure
H01S5/3095Tunnel junction
H01S5/32comprising PN junctions
H01S5/3201incorporating bulkstrain effects
H01S5/3202grown on specifically orientated substrates, or using orientation dependent growth
H01S5/3203on non-planar substrates to create thickness or compositional variations
H01S5/3205with an active layer having a graded composition in the growth direction
H01S5/3206ordering or disordering the natural superlattice in ternary or quaternary materials
H01S5/3207ordered active layer
H01S5/3209disordered active layer
H01S5/321having intermediate bandgap layers
H01S5/3211characterised by special cladding layers
H01S5/3213asymmetric clading layers
H01S5/3214comprising materials from other groups of the periodic system than the materials of the active layer
H01S5/3215graded composition cladding layers
H01S5/3216quantum well or superlattice cladding layers
H01S5/3218specially strained cladding layers, other than for strain compensation
H01S5/3219explicitly Al-free cladding layers
H01S5/322type-II junctions
H01S5/3222in AIVBVI compounds
H01S5/3223IV compounds
H01S5/3224Si
H01S5/3226SiC
H01S5/3227porous Si
H01S5/3228diamond
H01S5/323in AIIIBV compounds
H01S5/32308emitting light at a wavelength less than 900 nm
H01S5/32316comprising only (Al)GaAs
H01S5/32325red laser based on InGaP
H01S5/32333based on InGaAsP
H01S5/32341blue laser based on GaN or GaP
H01S5/3235emitting light at a wavelength longer than 1000 nm
H01S5/32358containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the band-gap srongly in a non-linear way by the bowing effect
H01S5/32366(In)GaAs with small amount of N
H01S5/32375In(As)N with small amount of P, or In(As)P with small amount of N
H01S5/32383small amount of Thallum (TI)
H01S5/32391based onIn(Ga)(As)P
H01S5/327in AIIBVI compounds
H01S5/34comprising quantum well,or supperlattice structures
H01S5/3401having no PN junction
H01S5/3402intersubband lasers
H01S5/3403having a strained layer structure in which the strain performs a special function
H01S5/3404influencing the polarisation
H01S5/3406including strain compensation
H01S5/3407characterised by special barrier layers
H01S5/3408characterised by specially shaped wells
H01S5/3409special GRINSCH structures
H01S5/341Structures having reduced dimensionality, e.g.quantum wires
H01S5/3412quantum box or quantum dash
H01S5/3413comprising partially disordered wells or barriers
H01S5/3414by vacancy induced interdiffusion
H01S5/3415containing details related to carrier capture times into wells or barriers
H01S5/3416tunneling through barriers
H01S5/3418using transitions from higher quantum levels
H01S5/3419intersubband lasers
H01S5/342containing short period superlattices [SPS]
H01S5/3421layer structure of quantum wells to influence the near/far field
H01S5/3422comprising type-II quantum wells or superlattices
H01S5/3424comprising freestanding wells
H01S5/3425comprising couples wells or superlattices
H01S5/3426in AIVBVI compounds
H01S5/3427in IV compounds
H01S5/3428layer orientation perpendicular to the substrate
H01S5/343in AIIIBV compounds
H01S5/34306emitting light at a wavelength longer than 1000nm
H01S5/34313with a well layer having only As as V-compound
H01S5/3432the whole junction comprising only (AI)GaAs
H01S5/34326with a well layer based on InGa(Al)P
H01S5/34333with a well layer based on Ga(In)N or Ga(In)P
H01S5/3434with a well layer comprising at least both As and P as V-compounds
H01S5/34346characterised by the materials of the barrier layers
H01S5/34353based on (AI)GaAs
H01S5/3436based on InGa(Al)P
H01S5/34366based on InGa(Al)AS
H01S5/34373based on InGa(Al)AsP
H01S5/3438based on In(Al)P
H01S5/34386explicitly Al-free
H01S5/34393not only based on AIIIBV compounds
H01S5/347in AIIBVI compounds
H01S5/36comprising organic materials
H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
H01S5/4006Injection locking
H01S5/4012Beam combining
H01S5/4018Lasers electrically in series
H01S5/4025Array arrangements
H01S5/4031Edge-emitting structures
H01S5/4037with active layers in more than one orientation
H01S5/4043with vertically stacked active layers
H01S5/405Two-dimensional arrays
H01S5/4056emitting light in more than one direction
H01S5/4062with an external cavity or using internal filters
H01S5/4068with lateral coupling by axially offset or by merging waveguides
H01S5/4075Beam steering
H01S5/4081Near-or far field control
H01S5/4087emitting more than one wavelength
H01S5/4093Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion
H01S5/42Arrays of surface emitting lasers
H01S5/423having a vertical cavity
H01S5/426Vertically stacked cavities
H01S5/50Amplifier structures not provided for in groups H01S5/02 - H01S5/30
H01S5/5009the arrangement being polarisation-insensitive
H01S5/5018using two or more amplifiers or multiple passes through the same amplifier
H01S5/5027Concatenated amplifiers
H01S5/5036the arrangement being polarisation-selective
H01S5/5045the arrangement having a frequency filtering function
H01S5/5054in which the wavelength is transformed by non-linear properties of the active medium
H01S5/5063operating above threshold
H01S5/5072Gain clamping
H01S5/5081specifically standing wave amplifiers
H01S5/509Wavelength converting amplifier