comprising plural independent floating gates which store independent data

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CPC
G11C16/0458

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/0458comprising plural independent floating gates which store independent data

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Ternary content addressable memory and decision generation method f...
- Patent number 12,211,550
- Issue date Jan 28, 2025
- Macronix International Co., Ltd.
- Po-Hao Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
3D memory device including shared select gate connections between m...
- Patent number 12,131,782
- Issue date Oct 29, 2024
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Grant
Mixed signal neuromorphic computing with nonvolatile memory devices
- Patent number 12,106,211
- Issue date Oct 1, 2024
- The Regents of the University of California
- Dmitri Strukov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Circuit and method for on-chip leakage detection and compensation f...
- Patent number 12,087,368
- Issue date Sep 10, 2024
- STMICROELECTRONICS INTERNATIONAL N.V.
- Arpit Vijayvergia
- G11 - INFORMATION STORAGE
Information Patent Grant
Content addressable memory device having electrically floating body...
- Patent number 12,080,349
- Issue date Sep 3, 2024
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-part programming of memory cells
- Patent number 11,948,644
- Issue date Apr 2, 2024
- Lodestar Licensing Group LLC
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
Ternary content addressable memory and decision generation method f...
- Patent number 11,923,008
- Issue date Mar 5, 2024
- Macronix International Co., Ltd.
- Po-Hao Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Content addressable memory device having electrically floating body...
- Patent number 11,881,264
- Issue date Jan 23, 2024
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Grant
Field-effect transistors and methods of their formation
- Patent number 11,824,096
- Issue date Nov 21, 2023
- Micron Technology, Inc.
- Haitao Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Voltage generation circuits
- Patent number 11,715,502
- Issue date Aug 1, 2023
- Micron Technology, Inc.
- Agostino Macerola
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
3D memory device including shared select gate connections between m...
- Patent number 11,670,370
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Grant
Content addressable memory device having electrically floating body...
- Patent number 11,594,280
- Issue date Feb 28, 2023
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ternary content addressable memory and decision generation method f...
- Patent number 11,587,617
- Issue date Feb 21, 2023
- Macronix International Co., Ltd.
- Po-Hao Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus for determining data states of memory cells
- Patent number 11,568,940
- Issue date Jan 31, 2023
- Micron Technology, Inc.
- Tommaso Vali
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Split-gate, 2-bit non-volatile memory cell with erase gate disposed...
- Patent number 11,315,635
- Issue date Apr 26, 2022
- Silicon Storage Technology, Inc.
- Chunming Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-part programming methods
- Patent number 11,222,699
- Issue date Jan 11, 2022
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
3D memory device including shared select gate connections between m...
- Patent number 11,164,629
- Issue date Nov 2, 2021
- Micron Technology, Inc.
- Aaron Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EEPROM cell and array having stacked nanosheet field effect transis...
- Patent number 11,145,668
- Issue date Oct 12, 2021
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Control gate structures for field-effect transistors
- Patent number 11,121,223
- Issue date Sep 14, 2021
- Micron Technology, Inc.
- Haitao Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus for determining data states of memory cells
- Patent number 11,107,536
- Issue date Aug 31, 2021
- Micron Technology, Inc.
- Tommaso Vali
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Content addressable memory device having electrically floating body...
- Patent number 11,100,994
- Issue date Aug 24, 2021
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Content addressable memory device having electrically floating body...
- Patent number 10,839,905
- Issue date Nov 17, 2020
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for operating the same
- Patent number 10,796,772
- Issue date Oct 6, 2020
- SK Hynix Inc.
- Heon Jin Choo
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-part programming methods
- Patent number 10,770,145
- Issue date Sep 8, 2020
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
One check fail byte (CFBYTE) scheme
- Patent number 10,762,974
- Issue date Sep 1, 2020
- Micron Technology, Inc.
- Aliasgar S. Madraswala
- G11 - INFORMATION STORAGE
Information Patent Grant
Increased terrace configuration for non-volatile memory
- Patent number 10,726,921
- Issue date Jul 28, 2020
- SanDisk Technologies LLC
- Chia-Lin Hsiung
- G11 - INFORMATION STORAGE
Information Patent Grant
Determining data states of memory cells
- Patent number 10,714,191
- Issue date Jul 14, 2020
- Micron Technology, Inc.
- Tommaso Vali
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
3D memory device including shared select gate connections between m...
- Patent number 10,706,930
- Issue date Jul 7, 2020
- Micron Technology, Inc.
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Grant
Split-gate flash memory, method of fabricating same and method for...
- Patent number 10,700,174
- Issue date Jun 30, 2020
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Xianzhou Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density split-gate memory cell
- Patent number 10,658,027
- Issue date May 19, 2020
- Silicon Storage Technology, Inc.
- Nhan Do
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...
- Publication number 20250037767
- Publication date Jan 30, 2025
- Lodestar Licensing Group, LLC
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT AND METHOD FOR ON-CHIP LEAKAGE DETECTION AND COMPENSATION F...
- Publication number 20250029664
- Publication date Jan 23, 2025
- STMicroelectronics International N.V.
- Arpit VIJAYVERGIA
- G11 - INFORMATION STORAGE
Information Patent Application
Content Addressable Memory Device Having Electrically Floating Body...
- Publication number 20240395323
- Publication date Nov 28, 2024
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-PART PROGRAMMING OF MEMORY CELLS
- Publication number 20240185923
- Publication date Jun 6, 2024
- Lodestar Licensing Group LLC
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...
- Publication number 20230420049
- Publication date Dec 28, 2023
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT AND METHOD FOR ON-CHIP LEAKAGE DETECTION AND COMPENSATION F...
- Publication number 20220208279
- Publication date Jun 30, 2022
- STMicroelectronics International N.V.
- Arpit VIJAYVERGIA
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-PART PROGRAMMING OF MEMORY CELLS
- Publication number 20220115071
- Publication date Apr 14, 2022
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
SPLIT-GATE, 2-BIT NON-VOLATILE MEMORY CELL WITH ERASE GATE DISPOSED...
- Publication number 20220101920
- Publication date Mar 31, 2022
- Silicon Storage Technology, Inc.
- CHUNMING WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...
- Publication number 20220051720
- Publication date Feb 17, 2022
- Micron Technology, Inc.
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD-EFFECT TRANSISTORS AND METHODS OF THEIR FORMATION
- Publication number 20210408244
- Publication date Dec 30, 2021
- Micron Technology, Inc.
- Haitao Liu
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS FOR DETERMINING DATA STATES OF MEMORY CELLS
- Publication number 20210383876
- Publication date Dec 9, 2021
- Micron Technology, Inc.
- Tommaso Vali
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CONTROL GATE STRUCTURES FOR FIELD-EFFECT TRANSISTORS
- Publication number 20210151573
- Publication date May 20, 2021
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
READ LATENCY REDUCTION FOR PARTIALLY-PROGRAMMED BLOCK OF NON-VOLATI...
- Publication number 20210118510
- Publication date Apr 22, 2021
- Intel Corporation
- Joseph F. DOLLER
- G11 - INFORMATION STORAGE
Information Patent Application
Content Addressable Memory Device Having Electrically Floating Body...
- Publication number 20210057027
- Publication date Feb 25, 2021
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIXED SIGNAL NEUROMORPHIC COMPUTING WITH NONVOLATILE MEMORY DEVICES
- Publication number 20210019609
- Publication date Jan 21, 2021
- The Regents of the University of California
- Dmitri Strukov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TWO-PART PROGRAMMING METHODS
- Publication number 20200402585
- Publication date Dec 24, 2020
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...
- Publication number 20200357468
- Publication date Nov 12, 2020
- Micron Technology, Inc.
- Aaron Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS FOR DETERMINING DATA STATES OF MEMORY CELLS
- Publication number 20200335171
- Publication date Oct 22, 2020
- Micron Technology, Inc.
- Tommaso Vali
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STACKED NANOSHEET FIELD EFFECT TRANSISTOR FLOATING-GATE EEPROM CELL...
- Publication number 20200006366
- Publication date Jan 2, 2020
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Application
ONE CHECK FAIL BYTE (CFBYTE) SCHEME
- Publication number 20190355431
- Publication date Nov 21, 2019
- Micron Tehcnology, Inc.
- Aliasgar S. Madraswala
- G11 - INFORMATION STORAGE
Information Patent Application
Flash Memory Cell with Dual Erase Modes for Increased Cell Endurance
- Publication number 20190287624
- Publication date Sep 19, 2019
- MICROCHIP TECHNOLOGY INCORPORATED
- Luc Reboulet
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF OPERATING A MEMORY WITH REDISTRIBUTION OF RECEIVED DATA
- Publication number 20190221258
- Publication date Jul 18, 2019
- Micron Technology, Inc.
- Preston A. Thomson
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-PART PROGRAMMING METHODS
- Publication number 20190206485
- Publication date Jul 4, 2019
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
High Density Split-Gate Memory Cell
- Publication number 20190172529
- Publication date Jun 6, 2019
- Silicon Storage Technology, Inc.
- Nhan Do
- G11 - INFORMATION STORAGE
Information Patent Application
DETERMINING DATA STATES OF MEMORY CELLS
- Publication number 20190066804
- Publication date Feb 28, 2019
- Micron Technology, Inc.
- Tommaso Vali
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY ARRANGEMENT
- Publication number 20190027485
- Publication date Jan 24, 2019
- INFINEON TECHNOLOGIES AG
- Wieland Fischer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF OPERATING A MEMORY WITH REDISTRIBUTION OF RECEIVED DATA
- Publication number 20180277200
- Publication date Sep 27, 2018
- Micron Technology, Inc.
- Preston A. Thomson
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-PART PROGRAMMING METHODS
- Publication number 20180096722
- Publication date Apr 5, 2018
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY STRUCTURE
- Publication number 20170207228
- Publication date Jul 20, 2017
- Ememory Technology Inc.
- Ying-Je Chen
- G11 - INFORMATION STORAGE
Information Patent Application
1T1b AND 2T2b FLASH-BASED, DATA-ORIENTED EEPROM DESIGN
- Publication number 20150071007
- Publication date Mar 12, 2015
- Peter Wung Lee
- G11 - INFORMATION STORAGE

comprising plural independent floating gates which store independent data

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Ternary content addressable memory and decision generation method f...

3D memory device including shared select gate connections between m...

Mixed signal neuromorphic computing with nonvolatile memory devices

Circuit and method for on-chip leakage detection and compensation f...

Content addressable memory device having electrically floating body...

Two-part programming of memory cells

Ternary content addressable memory and decision generation method f...

Content addressable memory device having electrically floating body...

Field-effect transistors and methods of their formation

Voltage generation circuits

3D memory device including shared select gate connections between m...

Content addressable memory device having electrically floating body...

Ternary content addressable memory and decision generation method f...

Apparatus for determining data states of memory cells

Split-gate, 2-bit non-volatile memory cell with erase gate disposed...

Two-part programming methods

3D memory device including shared select gate connections between m...

EEPROM cell and array having stacked nanosheet field effect transis...

Control gate structures for field-effect transistors

Apparatus for determining data states of memory cells

Content addressable memory device having electrically floating body...

Content addressable memory device having electrically floating body...

Semiconductor memory device and method for operating the same

Two-part programming methods

One check fail byte (CFBYTE) scheme

Increased terrace configuration for non-volatile memory

Determining data states of memory cells

3D memory device including shared select gate connections between m...

Split-gate flash memory, method of fabricating same and method for...

High density split-gate memory cell

Patents Applicationslast 30 patents

3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...

CIRCUIT AND METHOD FOR ON-CHIP LEAKAGE DETECTION AND COMPENSATION F...

Content Addressable Memory Device Having Electrically Floating Body...

TWO-PART PROGRAMMING OF MEMORY CELLS

3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...

CIRCUIT AND METHOD FOR ON-CHIP LEAKAGE DETECTION AND COMPENSATION F...

TWO-PART PROGRAMMING OF MEMORY CELLS

SPLIT-GATE, 2-BIT NON-VOLATILE MEMORY CELL WITH ERASE GATE DISPOSED...

3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...

FIELD-EFFECT TRANSISTORS AND METHODS OF THEIR FORMATION

APPARATUS FOR DETERMINING DATA STATES OF MEMORY CELLS

CONTROL GATE STRUCTURES FOR FIELD-EFFECT TRANSISTORS

READ LATENCY REDUCTION FOR PARTIALLY-PROGRAMMED BLOCK OF NON-VOLATI...

Content Addressable Memory Device Having Electrically Floating Body...

MIXED SIGNAL NEUROMORPHIC COMPUTING WITH NONVOLATILE MEMORY DEVICES

TWO-PART PROGRAMMING METHODS

3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...

APPARATUS FOR DETERMINING DATA STATES OF MEMORY CELLS

STACKED NANOSHEET FIELD EFFECT TRANSISTOR FLOATING-GATE EEPROM CELL...

ONE CHECK FAIL BYTE (CFBYTE) SCHEME

Flash Memory Cell with Dual Erase Modes for Increased Cell Endurance

METHODS OF OPERATING A MEMORY WITH REDISTRIBUTION OF RECEIVED DATA

TWO-PART PROGRAMMING METHODS

High Density Split-Gate Memory Cell

DETERMINING DATA STATES OF MEMORY CELLS

MEMORY ARRANGEMENT

METHODS OF OPERATING A MEMORY WITH REDISTRIBUTION OF RECEIVED DATA

TWO-PART PROGRAMMING METHODS

NONVOLATILE MEMORY STRUCTURE

1T1b AND 2T2b FLASH-BASED, DATA-ORIENTED EEPROM DESIGN