Concurrent multilevel programming of more than one cell

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CPC
G11C2211/5622

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GPHYSICS G11Information storage G11CSTATIC STORES G11C2211/00Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C2211/5622Concurrent multilevel programming of more than one cell

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Apparatus and method for programming data in a non-volatile memory...
- Patent number 11,990,191
- Issue date May 21, 2024
- SK Hynix Inc.
- Hyung Jin Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-part programming of memory cells
- Patent number 11,948,644
- Issue date Apr 2, 2024
- Lodestar Licensing Group LLC
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
First-pass dynamic program targeting (DPT)
- Patent number 11,651,828
- Issue date May 16, 2023
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-part programming methods
- Patent number 11,222,699
- Issue date Jan 11, 2022
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
First-pass dynamic program targeting (DPT)
- Patent number 11,069,416
- Issue date Jul 20, 2021
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-part programming methods
- Patent number 10,770,145
- Issue date Sep 8, 2020
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for programming non-volatile memory during burst...
- Patent number 10,714,169
- Issue date Jul 14, 2020
- SanDisk Technologies LLC
- Phil Reusswig
- G11 - INFORMATION STORAGE
Information Patent Grant
First-pass dynamic program targeting (DPT)
- Patent number 10,629,278
- Issue date Apr 21, 2020
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming memories with stepped programming pulses
- Patent number 10,515,692
- Issue date Dec 24, 2019
- Micron Technology, Inc.
- Qiang Tang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Apparatus configured to program memory cells using an intermediate...
- Patent number 10,504,600
- Issue date Dec 10, 2019
- Micron Technology, Inc.
- Carmine Miccoli
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent copying of first and second subsets of pages from media...
- Patent number 10,430,108
- Issue date Oct 1, 2019
- Intel Corporation
- Shankar Natarajan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Efficient data path architecture for flash devices configured to pe...
- Patent number 10,389,380
- Issue date Aug 20, 2019
- SK Hynix Inc.
- Wei-Hao Yuan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Two-part programming methods
- Patent number 10,249,365
- Issue date Apr 2, 2019
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming of nonvolatile memory with verify level dependent on me...
- Patent number 10,157,681
- Issue date Dec 18, 2018
- SanDisk Technologies LLC
- Nima Mokhlesi
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus configured to program memory cells using an intermediate...
- Patent number 10,147,494
- Issue date Dec 4, 2018
- Micron Technology, Inc.
- Carmine Miccoli
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage device including a nonvolatile memory device and a controll...
- Patent number 10,121,543
- Issue date Nov 6, 2018
- Samsung Electronics Co., Ltd.
- Eun Chu Oh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Coarse pass and fine pass multi-level NVM programming
- Patent number 10,109,361
- Issue date Oct 23, 2018
- Intel Corporation
- Ali Khakifirooz
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming memories with stepped programming pulses including inhi...
- Patent number 10,037,797
- Issue date Jul 31, 2018
- Micron Technology, Inc.
- Qiang Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for writing into and reading a multi-levels EEPROM and corre...
- Patent number 9,899,090
- Issue date Feb 20, 2018
- STMicroelectronics (Rousset) SAS
- Francois Tailliet
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-part programming methods
- Patent number 9,858,991
- Issue date Jan 2, 2018
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming memories with stepped programming pulses
- Patent number 9,767,894
- Issue date Sep 19, 2017
- Micron Technology, Inc.
- Qiang Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for writing into and reading a multi-levels EEPROM and corre...
- Patent number 9,711,230
- Issue date Jul 18, 2017
- STMicroelectronics (Rousset) SAS
- Francois Tailliet
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-state programming for non-volatile memory
- Patent number 9,595,317
- Issue date Mar 14, 2017
- SanDisk Technologies LLC
- Yen-Lung Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Digital signaling processing for three dimensional flash memory arrays
- Patent number 9,536,612
- Issue date Jan 3, 2017
- AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
- Hanan Weingarten
- G11 - INFORMATION STORAGE
Information Patent Grant
Auto low current programming method without verify
- Patent number 9,514,806
- Issue date Dec 6, 2016
- Integrated Silicon Solution, Inc.
- Sung Jin Yoo
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-part programming methods
- Patent number 9,502,101
- Issue date Nov 22, 2016
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and operating method thereof
- Patent number 9,478,304
- Issue date Oct 25, 2016
- SK Hynix Inc.
- Min Sang Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for reduced program disturb for 3D NAND flash
- Patent number 9,373,409
- Issue date Jun 21, 2016
- Macronix International Co., Ltd.
- Kuo-Pin Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming non-volatile storage including reducing impact from oth...
- Patent number RE45910
- Issue date Mar 1, 2016
- SanDisk Technologies Inc.
- Yingda Dong
- 001 -
Information Patent Grant
Nonvolatile memory device having variable resistive elements and me...
- Patent number 9,208,874
- Issue date Dec 8, 2015
- Samsung Electronics Co., Ltd.
- Yong-Kyu Lee
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
TWO-PART PROGRAMMING OF MEMORY CELLS
- Publication number 20240185923
- Publication date Jun 6, 2024
- Lodestar Licensing Group LLC
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-PART PROGRAMMING OF MEMORY CELLS
- Publication number 20220115071
- Publication date Apr 14, 2022
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
FIRST-PASS DYNAMIC PROGRAM TARGETING (DPT)
- Publication number 20210343353
- Publication date Nov 4, 2021
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-PART PROGRAMMING METHODS
- Publication number 20200402585
- Publication date Dec 24, 2020
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
FIRST-PASS DYNAMIC PROGRAM TARGETING (DPT)
- Publication number 20200312419
- Publication date Oct 1, 2020
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Application
FIRST-PASS DYNAMIC PROGRAM TARGETING (DPT)
- Publication number 20200075111
- Publication date Mar 5, 2020
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-PART PROGRAMMING METHODS
- Publication number 20190206485
- Publication date Jul 4, 2019
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS CONFIGURED TO PROGRAM MEMORY CELLS USING AN INTERMEDIATE...
- Publication number 20190088343
- Publication date Mar 21, 2019
- Micron Technology, Inc.
- Carmine Miccoli
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-PART PROGRAMMING METHODS
- Publication number 20180096722
- Publication date Apr 5, 2018
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING MEMORIES WITH STEPPED PROGRAMMING PULSES
- Publication number 20170352409
- Publication date Dec 7, 2017
- Micron Technology, Inc.
- Qiang Tang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD FOR WRITING INTO AND READING A MULTI-LEVELS EEPROM AND CORRE...
- Publication number 20170263320
- Publication date Sep 14, 2017
- STMicroelectronics (Rousset) SAS
- Francois Tailliet
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-PART PROGRAMMING METHODS
- Publication number 20170025170
- Publication date Jan 26, 2017
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE HAVING VARIABLE RESISTIVE ELEMENTS AND ME...
- Publication number 20140169068
- Publication date Jun 19, 2014
- YONG-KYU LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES AND OPERATING METHODS FOR A MEMORY DEVICE
- Publication number 20140063937
- Publication date Mar 6, 2014
- Micron Technology, Inc.
- Matthew Goldman
- G11 - INFORMATION STORAGE
Information Patent Application
DATA STORAGE DEVICE COMPRISING NONVOLATILE MEMORY CHIPS AND CONTROL...
- Publication number 20140022842
- Publication date Jan 23, 2014
- YOUNG-WOO JUNG
- G11 - INFORMATION STORAGE
Information Patent Application
PARALLEL PROGRAMMING SCHEME IN MULTI-BIT PHASE CHANGE MEMORY
- Publication number 20130163322
- Publication date Jun 27, 2013
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Application
Memory controllers to output data signals of a number of bits and t...
- Publication number 20130166815
- Publication date Jun 27, 2013
- Micron Technology, Inc.
- Vishal Sarin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SENSING RESISTANCE VARIABLE MEMORY
- Publication number 20130010528
- Publication date Jan 10, 2013
- Micron Technology, Inc.
- Pradeep Ramani
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING METHODS AND MEMORIES
- Publication number 20120092932
- Publication date Apr 19, 2012
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING NON-VOLATILE STORAGE INCLUDNG REDUCING IMPACT FROM OTHE...
- Publication number 20110255345
- Publication date Oct 20, 2011
- Yingda Dong
- G11 - INFORMATION STORAGE
Information Patent Application
SAW-SHAPED MULTI-PULSE PROGRAMMING FOR PROGRAM NOISE REDUCTION IN M...
- Publication number 20110249504
- Publication date Oct 13, 2011
- Yingda Dong
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ADAPTED TO PROGRAM A NUMBER OF BITS TO A MEMORY CELL AND REA...
- Publication number 20110063906
- Publication date Mar 17, 2011
- Micron Technology, Inc.
- Vishal Sarin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD AND APPARATUS FOR INCREASING MEMORY PROGRAMMING EFFICIENCY T...
- Publication number 20110038204
- Publication date Feb 17, 2011
- Tsung Yi Chou
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF OPERATING MEMORY DEVICE HAVING PAGE BUFFER
- Publication number 20100309727
- Publication date Dec 9, 2010
- Hynix Semiconductor Inc.
- Se Chun PARK
- G11 - INFORMATION STORAGE
Information Patent Application
SENSING RESISTANCE VARIABLE MEMORY
- Publication number 20100296331
- Publication date Nov 25, 2010
- Micron Technology, Inc.
- Pradeep Ramani
- G11 - INFORMATION STORAGE
Information Patent Application
Memory device, memory system having the same, and programming metho...
- Publication number 20100214831
- Publication date Aug 26, 2010
- Ho-Jung Kim
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING METHODS AND MEMORIES
- Publication number 20100124108
- Publication date May 20, 2010
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Stage Parallel Data Transfer
- Publication number 20100097841
- Publication date Apr 22, 2010
- Seagate Technology LLC
- Yong Lu
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE VARIABLE MEMORY DEVICE PROGRAMMING MULTI-BIT DATA
- Publication number 20100097842
- Publication date Apr 22, 2010
- Samsung Electronics Co., Ltd.
- Youngnam HWANG
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCED-POWER PROGRAMMING OF MULTI-LEVEL CELL (MLC) MEMORY
- Publication number 20100057977
- Publication date Mar 4, 2010
- Agere Systems Inc.
- Nils Graef
- G11 - INFORMATION STORAGE

Concurrent multilevel programming of more than one cell

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Apparatus and method for programming data in a non-volatile memory...

Two-part programming of memory cells

First-pass dynamic program targeting (DPT)

Two-part programming methods

First-pass dynamic program targeting (DPT)

Two-part programming methods

System and method for programming non-volatile memory during burst...

First-pass dynamic program targeting (DPT)

Programming memories with stepped programming pulses

Apparatus configured to program memory cells using an intermediate...

Concurrent copying of first and second subsets of pages from media...

Efficient data path architecture for flash devices configured to pe...

Two-part programming methods

Programming of nonvolatile memory with verify level dependent on me...

Apparatus configured to program memory cells using an intermediate...

Storage device including a nonvolatile memory device and a controll...

Coarse pass and fine pass multi-level NVM programming

Programming memories with stepped programming pulses including inhi...

Method for writing into and reading a multi-levels EEPROM and corre...

Two-part programming methods

Programming memories with stepped programming pulses

Method for writing into and reading a multi-levels EEPROM and corre...

Multi-state programming for non-volatile memory

Digital signaling processing for three dimensional flash memory arrays

Auto low current programming method without verify

Two-part programming methods

Semiconductor memory device and operating method thereof

Systems and methods for reduced program disturb for 3D NAND flash

Programming non-volatile storage including reducing impact from oth...

Nonvolatile memory device having variable resistive elements and me...

Patents Applicationslast 30 patents

TWO-PART PROGRAMMING OF MEMORY CELLS

TWO-PART PROGRAMMING OF MEMORY CELLS

FIRST-PASS DYNAMIC PROGRAM TARGETING (DPT)

TWO-PART PROGRAMMING METHODS

FIRST-PASS DYNAMIC PROGRAM TARGETING (DPT)

FIRST-PASS DYNAMIC PROGRAM TARGETING (DPT)

TWO-PART PROGRAMMING METHODS

APPARATUS CONFIGURED TO PROGRAM MEMORY CELLS USING AN INTERMEDIATE...

TWO-PART PROGRAMMING METHODS

PROGRAMMING MEMORIES WITH STEPPED PROGRAMMING PULSES

METHOD FOR WRITING INTO AND READING A MULTI-LEVELS EEPROM AND CORRE...

TWO-PART PROGRAMMING METHODS

NONVOLATILE MEMORY DEVICE HAVING VARIABLE RESISTIVE ELEMENTS AND ME...

MEMORY DEVICES AND OPERATING METHODS FOR A MEMORY DEVICE

DATA STORAGE DEVICE COMPRISING NONVOLATILE MEMORY CHIPS AND CONTROL...

PARALLEL PROGRAMMING SCHEME IN MULTI-BIT PHASE CHANGE MEMORY

Memory controllers to output data signals of a number of bits and t...

SENSING RESISTANCE VARIABLE MEMORY

PROGRAMMING METHODS AND MEMORIES

PROGRAMMING NON-VOLATILE STORAGE INCLUDNG REDUCING IMPACT FROM OTHE...

SAW-SHAPED MULTI-PULSE PROGRAMMING FOR PROGRAM NOISE REDUCTION IN M...

MEMORY ADAPTED TO PROGRAM A NUMBER OF BITS TO A MEMORY CELL AND REA...

METHOD AND APPARATUS FOR INCREASING MEMORY PROGRAMMING EFFICIENCY T...

METHOD OF OPERATING MEMORY DEVICE HAVING PAGE BUFFER

SENSING RESISTANCE VARIABLE MEMORY

Memory device, memory system having the same, and programming metho...

PROGRAMMING METHODS AND MEMORIES

Multi-Stage Parallel Data Transfer

RESISTANCE VARIABLE MEMORY DEVICE PROGRAMMING MULTI-BIT DATA

REDUCED-POWER PROGRAMMING OF MULTI-LEVEL CELL (MLC) MEMORY