conducting part of electrode is difined by a sidewall spacer or a similar technique

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28132conducting part of electrode is difined by a sidewall spacer or a similar technique

Industries

Patents Grantslast 30 patents

Information Patent Grant
Ion implantation to reduce nanosheet gate length variation
- Patent number 11,955,533
- Issue date Apr 9, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,881,519
- Issue date Jan 23, 2024
- Samsung Electronics Co., Ltd.
- Nam Gyu Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for non-resist nanolithography
- Patent number 11,855,190
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company
- Miin-Jang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing static random access memory device
- Patent number 11,832,431
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,804,535
- Issue date Oct 31, 2023
- Samsung Electronics Co., Ltd.
- Jong Chul Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,735,425
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu Ang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with variously conformal gate dielectric layers
- Patent number 11,616,130
- Issue date Mar 28, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for non-resist nanolithography
- Patent number 11,532,729
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company
- Miin-Jang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for semiconductor device having gate spacer pr...
- Patent number 11,495,465
- Issue date Nov 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with asymmetric source and drain regions
- Patent number 11,450,769
- Issue date Sep 20, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Hsien-Yuan Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to reduce nanosheet gate length variation
- Patent number 11,430,877
- Issue date Aug 30, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for metal gate surface clean
- Patent number 11,410,846
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shich-Chang Suen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing a transistor gate by non-directional impl...
- Patent number 11,398,384
- Issue date Jul 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming ihe same
- Patent number 11,380,582
- Issue date Jul 5, 2022
- Winbond Electronics Corp.
- Che-Fu Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing static random access memory device
- Patent number 11,355,501
- Issue date Jun 7, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,349,007
- Issue date May 31, 2022
- Samsung Electronics Co., Ltd.
- Nam Gyu Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer structure with high plasma resistance for semiconductor devices
- Patent number 11,329,141
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,309,185
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Tzu Ang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor comprising a lengthened gate
- Patent number 11,270,886
- Issue date Mar 8, 2022
- STMicroelectronics (Rousset) SAS
- Julien Delalleau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low dimensional material device and method
- Patent number 11,244,866
- Issue date Feb 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Tse Hung
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 11,171,224
- Issue date Nov 9, 2021
- Samsung Electronics Co., Ltd.
- Dong Chan Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of fabricating the same
- Patent number 11,145,511
- Issue date Oct 12, 2021
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Xue Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Workpiece processing method
- Patent number 11,133,192
- Issue date Sep 28, 2021
- Tokyo Electron Limited
- Masahiro Tabata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with asymmetric source and drain regions
- Patent number 10,964,814
- Issue date Mar 30, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Hsien-Yuan Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact over active enabled by alternative spacer scheme and c...
- Patent number 10,943,990
- Issue date Mar 9, 2021
- International Business Machines Corporation
- Andrew Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cover member for a robot used in a painting process having absorpti...
- Patent number 10,943,985
- Issue date Mar 9, 2021
- TD Industrial Coverings, Inc.
- Mark D'Andreta
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Grant
Method of manufacturing MOS transistor spacers
- Patent number 10,930,757
- Issue date Feb 23, 2021
- STMicroelectronics (Rousset) SAS
- Arnaud Regnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 10,879,367
- Issue date Dec 29, 2020
- Mitsubishi Electric Corporation
- Chikayuki Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition selectivity enhancement and manufacturing method thereof
- Patent number 10,861,959
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for semiconductor device having gate spacer pr...
- Patent number 10,854,458
- Issue date Dec 1, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240128347
- Publication date Apr 18, 2024
- Samsung Electronics Co., Ltd.
- Nam Gyu CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230395698
- Publication date Dec 7, 2023
- Powerchip Semiconductor Manufacturing Corporation
- Tien-Lu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20230352306
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu Ang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR METAL GATE SURFACE CLEAN
- Publication number 20220359189
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shich-Chang SUEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION
- Publication number 20220359723
- Publication date Nov 10, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20220351975
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING STATIC RANDOM ACCESS MEMORY DEVICE
- Publication number 20220302132
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Structure for Semiconductor Device Having Gate Spacer Pr...
- Publication number 20220301875
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITION OF ETCHANT, METHOD FOR FORMING SEMICONDUCTOR DEVICE USI...
- Publication number 20220290049
- Publication date Sep 15, 2022
- LCY Chemical Corp.
- Shang-Chen HUANG
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220285518
- Publication date Sep 8, 2022
- Samsung Electronics Co., Ltd.
- Nam Gyu CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20220189776
- Publication date Jun 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu Ang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION
- Publication number 20220157968
- Publication date May 19, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220052187
- Publication date Feb 17, 2022
- Samsung Electronics Co., Ltd.
- Dong Chan SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20210335613
- Publication date Oct 28, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Tzu Ang CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Dimensional Material Device and Method
- Publication number 20210265501
- Publication date Aug 26, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Tse Hung
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor Device and Method
- Publication number 20210249271
- Publication date Aug 12, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210210613
- Publication date Jul 8, 2021
- SAMSUNG ELECTRONICS CO., LTD.
- Nam Gyu CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor with Asymmetric Source and Drain Regions
- Publication number 20210184036
- Publication date Jun 17, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- HSIEN-YUAN LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTOR SPACERS AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210175346
- Publication date Jun 10, 2021
- STMicroelectronics (Rousset) SAS
- Arnaud REGNIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Structure for Semiconductor Device Having Gate Spacer Pr...
- Publication number 20210111029
- Publication date Apr 15, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Metal Gate Surface Clean
- Publication number 20210082688
- Publication date Mar 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shich-Chang SUEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING STATIC RANDOM ACCESS MEMORY DEVICE
- Publication number 20210050356
- Publication date Feb 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spacer Structure with High Plasma Resistance for Semiconductor Devices
- Publication number 20210028293
- Publication date Jan 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR COMPRISING A LENGTHENED GATE
- Publication number 20200395466
- Publication date Dec 17, 2020
- STMicroelectronics (Rousset) SAS
- Julien Delalleau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH VARIOUSLY CONFORMAL GATE DIELECTRIC LAYERS
- Publication number 20200312976
- Publication date Oct 1, 2020
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200303523
- Publication date Sep 24, 2020
- Samsung Electronics Co., Ltd.
- Dong Chan SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF ENHANCED FACETED RAISED SOURCE/DRAIN EPI MATERIAL FOR...
- Publication number 20200243646
- Publication date Jul 30, 2020
- GLOBALFOUNDRIES INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF ENHANCED FACETED RAISED SOURCE/DRAIN EPI MATERIAL FOR...
- Publication number 20200243645
- Publication date Jul 30, 2020
- GLOBALFOUNDRIES INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Contact Over Active Enabled by Alternative Spacer Scheme and C...
- Publication number 20200135886
- Publication date Apr 30, 2020
- International Business Machines Corporation
- Andrew Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER STRUCTURE WITH HIGH PLASMA RESISTANCE FOR SEMICONDUCTOR DEVICES
- Publication number 20200127112
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS

conducting part of electrode is difined by a sidewall spacer or a similar technique

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Ion implantation to reduce nanosheet gate length variation

Semiconductor device

Methods for non-resist nanolithography

Method for manufacturing static random access memory device

Semiconductor device and method for fabricating the same

Fin field-effect transistor and method of forming the same

Transistor device with variously conformal gate dielectric layers

Method for non-resist nanolithography

Method and structure for semiconductor device having gate spacer pr...

Transistor with asymmetric source and drain regions

Ion implantation to reduce nanosheet gate length variation

Method for metal gate surface clean

Methods for manufacturing a transistor gate by non-directional impl...

Semiconductor structure and method for forming ihe same

Method for manufacturing static random access memory device

Semiconductor device

Spacer structure with high plasma resistance for semiconductor devices

Fin field-effect transistor and method of forming the same

Transistor comprising a lengthened gate

Low dimensional material device and method

Semiconductor device

Power semiconductor device and method of fabricating the same

Workpiece processing method

Transistor with asymmetric source and drain regions

Gate contact over active enabled by alternative spacer scheme and c...

Cover member for a robot used in a painting process having absorpti...

Method of manufacturing MOS transistor spacers

Method for manufacturing semiconductor device

Deposition selectivity enhancement and manufacturing method thereof

Method and structure for semiconductor device having gate spacer pr...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

METHOD FOR METAL GATE SURFACE CLEAN

ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION

Semiconductor Device and Method

METHOD FOR MANUFACTURING STATIC RANDOM ACCESS MEMORY DEVICE

Method and Structure for Semiconductor Device Having Gate Spacer Pr...

COMPOSITION OF ETCHANT, METHOD FOR FORMING SEMICONDUCTOR DEVICE USI...

SEMICONDUCTOR DEVICE

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION

SEMICONDUCTOR DEVICE

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

Low Dimensional Material Device and Method

Semiconductor Device and Method

SEMICONDUCTOR DEVICE

Transistor with Asymmetric Source and Drain Regions

MOS TRANSISTOR SPACERS AND METHOD OF MANUFACTURING THE SAME

Method and Structure for Semiconductor Device Having Gate Spacer Pr...

Method for Metal Gate Surface Clean

METHOD FOR MANUFACTURING STATIC RANDOM ACCESS MEMORY DEVICE

Spacer Structure with High Plasma Resistance for Semiconductor Devices

TRANSISTOR COMPRISING A LENGTHENED GATE

TRANSISTOR DEVICE WITH VARIOUSLY CONFORMAL GATE DIELECTRIC LAYERS

SEMICONDUCTOR DEVICE

FORMATION OF ENHANCED FACETED RAISED SOURCE/DRAIN EPI MATERIAL FOR...

FORMATION OF ENHANCED FACETED RAISED SOURCE/DRAIN EPI MATERIAL FOR...

Gate Contact Over Active Enabled by Alternative Spacer Scheme and C...

SPACER STRUCTURE WITH HIGH PLASMA RESISTANCE FOR SEMICONDUCTOR DEVICES