Controlling or regulating flux or flow of depositing species or vapour

Industry

CPC
C30B23/005

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B23/00Single-crystal growth by condensing evaporated or sublimed material

Current Industry

C30B23/005Controlling or regulating flux or flow of depositing species or vapour

Industries

Patents Grantslast 30 patents

Information Patent Grant
Large dimension silicon carbide single crystalline materials with r...
- Patent number 12,125,701
- Issue date Oct 22, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide crystal
- Patent number 11,952,676
- Issue date Apr 9, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for crystal growth by replacing a sublimated target source...
- Patent number 11,926,922
- Issue date Mar 12, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for growing a SiC single crystal ingot comprising a filte...
- Patent number 11,859,305
- Issue date Jan 2, 2024
- Senic Inc.
- Jung Woo Choi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for growing high-purity semi-insulating silico...
- Patent number 11,851,784
- Issue date Dec 26, 2023
- Fujian Beidian Material Technologies Co., Ltd.
- Huarong Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing semi-insulating silicon carbide single crystal us...
- Patent number 11,846,038
- Issue date Dec 19, 2023
- Senic Inc.
- Jung Woo Choi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for depositing low temperature phosphorous-doped silicon
- Patent number 11,781,243
- Issue date Oct 10, 2023
- ASM IP Holding B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal sublimation growth apparatus
- Patent number 11,761,117
- Issue date Sep 19, 2023
- II-VI DELAWARE, INC.
- Avinash Gupta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of single crystal growth by controlling the heating of a sou...
- Patent number 11,718,926
- Issue date Aug 8, 2023
- Hon Hai Precision Industry Co., Ltd.
- Chung-Yi Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Superconducting compounds and methods for making the same
- Patent number 11,683,997
- Issue date Jun 20, 2023
- Quantum Designed Materials Ltd.
- Refael Gatt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for efficient manufacturing of a plurality of high-quality s...
- Patent number 11,560,643
- Issue date Jan 24, 2023
- SICRYSTAL GMBH
- Erwin Schmitt
- C30 - CRYSTAL GROWTH
Information Patent Grant
MBE system with direct evaporation pump to cold panel
- Patent number 11,519,095
- Issue date Dec 6, 2022
- Peng Du
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing bulk silicon carbide by sublimation of a silic...
- Patent number 11,434,582
- Issue date Sep 6, 2022
- GTAT Corporation
- Roman V. Drachev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing SiC single crystal and covering member
- Patent number 11,421,339
- Issue date Aug 23, 2022
- Showa Denko K.K.
- Yoshiteru Hosaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate and method of manufacturing the same
- Patent number 11,242,618
- Issue date Feb 8, 2022
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal sublimation growth apparatus
- Patent number 11,149,359
- Issue date Oct 19, 2021
- II-VI DELAWARE, INC.
- Avinash Gupta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal growth method which includes covering a part of a su...
- Patent number 11,111,599
- Issue date Sep 7, 2021
- SHOWA DENKO K.K.
- Yohei Fujikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus provided with a crucible including a porous baffle plate...
- Patent number 11,091,851
- Issue date Aug 17, 2021
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Taishi Kimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon carbide single crystal
- Patent number 11,078,598
- Issue date Aug 3, 2021
- Showa Denko K.K.
- Yohei Fujikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Preparation apparatus for silicon carbide crystals comprising a cir...
- Patent number 11,072,871
- Issue date Jul 27, 2021
- NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
- Chih-Wei Kuo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Molten target sputtering (MTS) deposition for enhanced kinetic ener...
- Patent number 10,947,639
- Issue date Mar 16, 2021
- UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NASA.
- Hyun Jung Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide crystal and method for manufacturing the same
- Patent number 10,851,470
- Issue date Dec 1, 2020
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial film forming method, sputtering apparatus, manufacturing...
- Patent number 10,844,470
- Issue date Nov 24, 2020
- Canon Anelva Corporation
- Yoshiaki Daigo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing bulk silicon carbide by sublimation of a silic...
- Patent number 10,633,762
- Issue date Apr 28, 2020
- GTAT Corporation
- Roman V. Drachev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Graphite crucible for sublimation growth of SiC crystal
- Patent number 10,435,810
- Issue date Oct 8, 2019
- Dow Silicones Corporation
- Mark Loboda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for formation of a transition metal dichalcogenide (TMDC) ma...
- Patent number 10,354,868
- Issue date Jul 16, 2019
- Imec VZW
- Salim El Kazzi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Effusion cells, deposition systems including effusion cells, and re...
- Patent number 10,329,688
- Issue date Jun 25, 2019
- Innovative Advanced Materials, Inc.
- William Alan Doolittle
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC single crystal sublimation growth method and apparatus
- Patent number 10,294,584
- Issue date May 21, 2019
- II-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Deposition systems including effusion sources, and related methods
- Patent number 10,266,962
- Issue date Apr 23, 2019
- Innovative Advanced Materials, Inc.
- William Alan Doolittle
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and device for producing a group 13 element nitride crystal...
- Patent number 10,190,233
- Issue date Jan 29, 2019
- NGK Insulators, Ltd.
- Suguru Noguchi
- C07 - ORGANIC CHEMISTRY

Patents Applicationslast 30 patents

Information Patent Application
SiC CRYSTAL GROWTH APPARATUS AND METHOD
- Publication number 20240328031
- Publication date Oct 3, 2024
- SK Siltron CSS, LLC
- Andrey SOUKHOJAK
- C30 - CRYSTAL GROWTH
Information Patent Application
MATERIAL DEPOSITION SYSTEM EQUIPMENT MAINTENANCE
- Publication number 20240254621
- Publication date Aug 1, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS AND APPARATUSES FOR CRYSTAL GROWTH
- Publication number 20240209543
- Publication date Jun 27, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
MATERIAL DEPOSITION SYSTEM EQUIPMENT MAINTENANCE
- Publication number 20240158912
- Publication date May 16, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF GROWING HIGH-QUALITY SINGLE CRYSTAL SILICON CARBIDE
- Publication number 20240150929
- Publication date May 9, 2024
- KISELKARBID I STOCKHOLM AB
- Li DONG
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and Device for Producing a SiC Solid Material
- Publication number 20240044045
- Publication date Feb 8, 2024
- Zadient Technologies SAS
- Ivo Crössmann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Improved Furnace Apparatus for Crystal Production
- Publication number 20230407519
- Publication date Dec 21, 2023
- Zadient Technologies SAS
- Kagan Ceran
- C30 - CRYSTAL GROWTH
Information Patent Application
Superconducting Compounds and Methods for Making the Same
- Publication number 20230345845
- Publication date Oct 26, 2023
- Quantum Designed Materials Ltd.
- Refael Gatt
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SYSTEM FOR DEPOSITING PIEZOELECTRIC MATERIALS, METHODS FOR USING TH...
- Publication number 20230257869
- Publication date Aug 17, 2023
- QORVO BIOTECHNOLOGIES, LLC
- Derya Deniz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF GROWING SEMI-INSULATING SILICON CARBIDE SINGLE CRYSTAL IN...
- Publication number 20230193506
- Publication date Jun 22, 2023
- Senic Inc.
- Jung Woo CHOI
- C30 - CRYSTAL GROWTH
Information Patent Application
System For Efficient Manufacturing Of A Plurality Of High-Quality S...
- Publication number 20230120928
- Publication date Apr 20, 2023
- SiCrystal GmbH
- Erwin Schmitt
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF SINGLE CRYSTAL GROWTH
- Publication number 20230059271
- Publication date Feb 23, 2023
- HON HAI PRECISION INDUSTRY CO., LTD.
- Chung-Yi CHEN
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE CRYSTAL
- Publication number 20230002929
- Publication date Jan 5, 2023
- GLOBALWAFERS CO., LTD.
- CHING-SHAN LIN
- C30 - CRYSTAL GROWTH
Information Patent Application
A METHOD OF CONTROLLED N-DOPING OF GROUP III-V MATERIALS GROWN ON (...
- Publication number 20220259758
- Publication date Aug 18, 2022
- Integrated Solar
- Renato BUGGE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MBE SYSTEM WITH DIRECT EVAPORATION PUMP TO COLD PANEL
- Publication number 20220049371
- Publication date Feb 17, 2022
- Peng DU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SiC Single Crystal Sublimation Growth Apparatus
- Publication number 20220002906
- Publication date Jan 6, 2022
- Avinash Gupta
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH-PURITY SEMI-INSULATING SILICON CARBIDE CRYSTAL GROWING APPARAT...
- Publication number 20210332497
- Publication date Oct 28, 2021
- Fujian Beidian Material Technologies Co., Ltd.
- Huarong CHEN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS AND APPARATUSES FOR CRYSTAL GROWTH
- Publication number 20210317594
- Publication date Oct 14, 2021
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF GROWING SEMI-INSULATING SILICON CARBIDE SINGLE CRYSTAL IN...
- Publication number 20210317595
- Publication date Oct 14, 2021
- SKC CO., LTD.
- Jung Woo CHOI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR DEPOSITING LOW TEMPERATURE PHOSPHOROUS-DOPED SILICON
- Publication number 20210254238
- Publication date Aug 19, 2021
- ASM IP HOLDING B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE CRYSTAL GROWING APPARATUS AND CRYSTAL GROWING METHO...
- Publication number 20210246573
- Publication date Aug 12, 2021
- Winsheng Material Technology (WMT) Co., Ltd.
- Yun-Fu Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Preparation apparatus for uniform silicon carbide crystals
- Publication number 20210189590
- Publication date Jun 24, 2021
- NATIONAL CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
- Chih-Wei Kuo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MOLECULAR BEAM EPITAXY SYSTEMS WITH VARIABLE SUBSTRATE-TO-SOURCE AR...
- Publication number 20210115588
- Publication date Apr 22, 2021
- VEECO INSTRUMENTS INC.
- Richard Charles Bresnahan
- C30 - CRYSTAL GROWTH
Information Patent Application
Superconducting Compounds and Methods for Making the Same
- Publication number 20210104656
- Publication date Apr 8, 2021
- Quantum Designed Materials Ltd.
- Refael Gatt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE CRYSTAL
- Publication number 20210054525
- Publication date Feb 25, 2021
- GLOBALWAFERS CO., LTD.
- CHING-SHAN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System For Efficient Manufacturing Of A Plurality Of High-Quality S...
- Publication number 20210002785
- Publication date Jan 7, 2021
- SiCrystal GmbH
- Erwin Schmitt
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING BULK SILICON CARBIDE BY SUBLIMATION OF A SILIC...
- Publication number 20200199777
- Publication date Jun 25, 2020
- GTAT Corporation
- Roman V. Drachev
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SiC SINGLE CRYSTAL AND COVERING MEMBER
- Publication number 20200080228
- Publication date Mar 12, 2020
- SHOWA DENKO K.K.
- Yoshiteru HOSAKA
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR MANUFACTURING COMPOUND SINGLE CRYSTAL, METHOD FOR MAN...
- Publication number 20190330762
- Publication date Oct 31, 2019
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Taishi KIMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC Single Crystal Sublimation Growth Apparatus
- Publication number 20190249332
- Publication date Aug 15, 2019
- II-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH

Controlling or regulating flux or flow of depositing species or vapour

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Large dimension silicon carbide single crystalline materials with r...

Silicon carbide crystal

Methods for crystal growth by replacing a sublimated target source...

Apparatus for growing a SiC single crystal ingot comprising a filte...

Apparatus and method for growing high-purity semi-insulating silico...

Method of growing semi-insulating silicon carbide single crystal us...

Method for depositing low temperature phosphorous-doped silicon

SiC single crystal sublimation growth apparatus

Method of single crystal growth by controlling the heating of a sou...

Superconducting compounds and methods for making the same

System for efficient manufacturing of a plurality of high-quality s...

MBE system with direct evaporation pump to cold panel

Method for producing bulk silicon carbide by sublimation of a silic...

Method of manufacturing SiC single crystal and covering member

Silicon carbide substrate and method of manufacturing the same

SiC single crystal sublimation growth apparatus

Single crystal growth method which includes covering a part of a su...

Apparatus provided with a crucible including a porous baffle plate...

Method for producing silicon carbide single crystal

Preparation apparatus for silicon carbide crystals comprising a cir...

Molten target sputtering (MTS) deposition for enhanced kinetic ener...

Silicon carbide crystal and method for manufacturing the same

Epitaxial film forming method, sputtering apparatus, manufacturing...

Method for producing bulk silicon carbide by sublimation of a silic...

Graphite crucible for sublimation growth of SiC crystal

Method for formation of a transition metal dichalcogenide (TMDC) ma...

Effusion cells, deposition systems including effusion cells, and re...

SiC single crystal sublimation growth method and apparatus

Deposition systems including effusion sources, and related methods

Method and device for producing a group 13 element nitride crystal...

Patents Applicationslast 30 patents

SiC CRYSTAL GROWTH APPARATUS AND METHOD

MATERIAL DEPOSITION SYSTEM EQUIPMENT MAINTENANCE

METHODS AND APPARATUSES FOR CRYSTAL GROWTH

MATERIAL DEPOSITION SYSTEM EQUIPMENT MAINTENANCE

METHOD OF GROWING HIGH-QUALITY SINGLE CRYSTAL SILICON CARBIDE

Method and Device for Producing a SiC Solid Material

Improved Furnace Apparatus for Crystal Production

Superconducting Compounds and Methods for Making the Same

SYSTEM FOR DEPOSITING PIEZOELECTRIC MATERIALS, METHODS FOR USING TH...

METHOD OF GROWING SEMI-INSULATING SILICON CARBIDE SINGLE CRYSTAL IN...

System For Efficient Manufacturing Of A Plurality Of High-Quality S...

METHOD OF SINGLE CRYSTAL GROWTH

SILICON CARBIDE CRYSTAL

A METHOD OF CONTROLLED N-DOPING OF GROUP III-V MATERIALS GROWN ON (...

MBE SYSTEM WITH DIRECT EVAPORATION PUMP TO COLD PANEL

SiC Single Crystal Sublimation Growth Apparatus

HIGH-PURITY SEMI-INSULATING SILICON CARBIDE CRYSTAL GROWING APPARAT...

METHODS AND APPARATUSES FOR CRYSTAL GROWTH

METHOD OF GROWING SEMI-INSULATING SILICON CARBIDE SINGLE CRYSTAL IN...

METHOD FOR DEPOSITING LOW TEMPERATURE PHOSPHOROUS-DOPED SILICON

SILICON CARBIDE CRYSTAL GROWING APPARATUS AND CRYSTAL GROWING METHO...

Preparation apparatus for uniform silicon carbide crystals

MOLECULAR BEAM EPITAXY SYSTEMS WITH VARIABLE SUBSTRATE-TO-SOURCE AR...

Superconducting Compounds and Methods for Making the Same

SILICON CARBIDE CRYSTAL

System For Efficient Manufacturing Of A Plurality Of High-Quality S...

METHOD FOR PRODUCING BULK SILICON CARBIDE BY SUBLIMATION OF A SILIC...

METHOD OF MANUFACTURING SiC SINGLE CRYSTAL AND COVERING MEMBER

APPARATUS FOR MANUFACTURING COMPOUND SINGLE CRYSTAL, METHOD FOR MAN...

SiC Single Crystal Sublimation Growth Apparatus