Controlling or regulating

Industry

CPC
C30B15/20

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B15/00Single-crystal growth by pulling from a melt

Current Industry

C30B15/20Controlling or regulating

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Method for producing silicon ingot single crystal
- Patent number 12,163,247
- Issue date Dec 10, 2024
- GlobalWafers Co., Ltd.
- Kazuo Nakajima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods and devices for growing scintillation crystals with multi-c...
- Patent number 12,152,315
- Issue date Nov 26, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and manufacturing method of the same
- Patent number 12,142,645
- Issue date Nov 12, 2024
- Sumco Corporation
- Kazuhisa Torigoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon single crystal
- Patent number 12,116,691
- Issue date Oct 15, 2024
- Sumco Corporation
- Yasufumi Kawakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thermal conductivity estimation method, thermal conductivity estima...
- Patent number 12,099,026
- Issue date Sep 24, 2024
- Sumco Corporation
- Ryusuke Yokoyama
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Asymmetric thermal fields for excluding impurities in single crysta...
- Patent number 12,091,770
- Issue date Sep 17, 2024
- Siemens Medical Solutions USA, Inc.
- Mark Andreaco
- C30 - CRYSTAL GROWTH
Information Patent Grant
Determination of mass/time ratios for buffer members used during gr...
- Patent number 12,091,769
- Issue date Sep 17, 2024
- GlobalWafers Co., Ltd.
- Matteo Pannocchia
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ingot temperature controller and wire sawing device having same
- Patent number 12,090,685
- Issue date Sep 17, 2024
- SK SILTRON CO., LTD.
- Young Il Jin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon single crystal doped with nitrogen a...
- Patent number 12,084,788
- Issue date Sep 10, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kosei Sugawara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Monocrystal growth method and monocrystal growth device
- Patent number 12,065,757
- Issue date Aug 20, 2024
- SICHUAN JINKO SOLAR CO., LTD
- Lei Zhao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystals for detecting neutrons, gamma rays, and x rays and prepara...
- Patent number 12,054,848
- Issue date Aug 6, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu Wang
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Systems for production of low oxygen content silicon
- Patent number 12,037,699
- Issue date Jul 16, 2024
- GlobalWafers Co., Ltd.
- Gaurab Samanta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ingot puller apparatus having a flange that extends from the funnel...
- Patent number 12,037,698
- Issue date Jul 16, 2024
- GlobalWafers Co., Ltd.
- Matteo Pannocchia
- C30 - CRYSTAL GROWTH
Information Patent Grant
Quality prediction method, preparation method and system of high re...
- Patent number 12,031,230
- Issue date Jul 9, 2024
- HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- Hongji Qi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for forming single crystal silicon ingots with improved res...
- Patent number 12,024,789
- Issue date Jul 2, 2024
- GlobalWafers Co., Ltd.
- Richard J. Phillips
- C30 - CRYSTAL GROWTH
Information Patent Grant
Quality prediction method, preparation method and system of conduct...
- Patent number 12,027,239
- Issue date Jul 2, 2024
- HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- Hongji Qi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Quality prediction method, preparation method and system of conduct...
- Patent number 12,024,790
- Issue date Jul 2, 2024
- HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- Hongji Qi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Quality prediction method, preparation method and system of high re...
- Patent number 12,024,791
- Issue date Jul 2, 2024
- HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- Hongji Qi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystals for detecting neutrons, gamma rays, and x rays and prepara...
- Patent number 12,018,399
- Issue date Jun 25, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor crystal growth method and device
- Patent number 12,000,060
- Issue date Jun 4, 2024
- ZING SEMICONDUCTOR CORPORATION
- Weimin Shen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for forming a silicon substrate with reduced grown-in nucle...
- Patent number 11,987,901
- Issue date May 21, 2024
- GlobalWafers Co., Ltd.
- Pietro Valcozzena
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for preparing an ingot in an ingot puller apparatus and met...
- Patent number 11,987,899
- Issue date May 21, 2024
- GlobalWafers Co., Ltd.
- Maria Porrini
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for forming a silicon substrate with reduced grown-in nucle...
- Patent number 11,987,900
- Issue date May 21, 2024
- GlobalWafers Co., Ltd.
- Pietro Valcozzena
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for pulling a cylindrical crystal from a melt
- Patent number 11,965,267
- Issue date Apr 23, 2024
- PVA TePla AG
- Andreas Muehe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for preparing ingot having reduced distortion at late body...
- Patent number 11,959,189
- Issue date Apr 16, 2024
- GlobalWafers Co., Ltd.
- Tapas Jain
- C30 - CRYSTAL GROWTH
Information Patent Grant
Radio frequency silicon on insulator structure with superior perfor...
- Patent number 11,942,360
- Issue date Mar 26, 2024
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for production of silicon using a horizontal ma...
- Patent number 11,932,962
- Issue date Mar 19, 2024
- GlobalWafers Co., Ltd.
- JaeWoo Ryu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide substrate, semiconductor epitaxial wafer, method f...
- Patent number 11,926,924
- Issue date Mar 12, 2024
- JX Metals Corporation
- Shunsuke Oka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Calcium metaborate birefringent crystal, preparation method and use...
- Patent number 11,898,268
- Issue date Feb 13, 2024
- Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sci...
- Shilie Pan
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Radio frequency silicon on insulator wafer platform with superior p...
- Patent number 11,887,885
- Issue date Jan 30, 2024
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PREPARING DIRECTIONALLY SOLIDIFIED TiAl ALLOY
- Publication number 20240401237
- Publication date Dec 5, 2024
- UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING
- Yongfeng Liang
- C30 - CRYSTAL GROWTH
Information Patent Application
ASYMMETRIC THERMAL FIELDS FOR EXCLUDING IMPURITIES IN SINGLE CRYSTA...
- Publication number 20240401228
- Publication date Dec 5, 2024
- Siemens Medical Solutions USA, Inc.
- Mark Andreaco
- C30 - CRYSTAL GROWTH
Information Patent Application
INGOT PULLER APPARATUS INCLUDING AUTOMATED CLAMP
- Publication number 20240376631
- Publication date Nov 14, 2024
- GLOBALWAFERS CO., LTD.
- Yu-Chiao Wu
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR SILICON MONOCRYSTAL AND PRODUCTION METHOD FOR...
- Publication number 20240368802
- Publication date Nov 7, 2024
- SUMCO CORPORATION
- Wataru SUGIMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL SILICON CARBIDE WAFER, SINGLE-CRYSTAL SILICON CARBID...
- Publication number 20240368806
- Publication date Nov 7, 2024
- Central Glass Company, Limited
- Tomonori UMEZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING A SILICON INGOT FROM SURFACE-OXIDISED SEEDS
- Publication number 20240368805
- Publication date Nov 7, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Etienne PIHAN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER OF MO...
- Publication number 20240352620
- Publication date Oct 24, 2024
- Siltronic AG
- Karl MANGELBERGER
- C30 - CRYSTAL GROWTH
Information Patent Application
INGOT PULLER APPARATUS HAVING A FLANGE THAT EXTENDS FROM THE FUNNEL...
- Publication number 20240328028
- Publication date Oct 3, 2024
- GLOBALWAFERS CO., LTD.
- Matteo Pannocchia
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS OF GROWING SINGLE CRYSTAL INGOTS USING SUSCEPTOR ASSEMBLY W...
- Publication number 20240309543
- Publication date Sep 19, 2024
- GLOBALWAFERS CO., LTD.
- Hong-Huei Huang
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Nitrogen-Doped Single Crystal Silicon Ingot an...
- Publication number 20240287704
- Publication date Aug 29, 2024
- Xun LAN
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal Puller and Method for Pulling Single-Crystal Silicon Ingot,...
- Publication number 20240271317
- Publication date Aug 15, 2024
- Xi'an ESWIN Material Technology Co., Ltd.
- Zhenliang SONG
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR MANUFACTURING SINGLE CRYSTAL
- Publication number 20240263342
- Publication date Aug 8, 2024
- Shin-Etsu Handotai Co., Ltd.
- Hirotaka TAKAHASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method For Growing Single-Crystal Silicon Ingots and Single-Crystal...
- Publication number 20240263351
- Publication date Aug 8, 2024
- Xi'an ESWIN Material Technology Co., Ltd.
- Zhenliang SONG
- C30 - CRYSTAL GROWTH
Information Patent Application
WATER-COOLED SCREEN FOR IMPROVING PULLING RATE OF SILICON CRYSTAL A...
- Publication number 20240247399
- Publication date Jul 25, 2024
- TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.
- Xiaodong LI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and Apparatus for Single Crystal Growth, and Single Crystal
- Publication number 20240247403
- Publication date Jul 25, 2024
- Shuangli WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEMS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON
- Publication number 20240247402
- Publication date Jul 25, 2024
- GLOBALWAFERS CO., LTD.
- Gaurab Samanta
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR PRODUCING SINGLE CRYSTAL SILICON WAFERS FOR INSULATED G...
- Publication number 20240240355
- Publication date Jul 18, 2024
- GLOBALWAFERS CO., LTD.
- Carissima Marie Hudson
- C30 - CRYSTAL GROWTH
Information Patent Application
INTAKE/EXHAUST DEVICE OF APPARATUS FOR CONTINUOUSLY GROWING SILICON...
- Publication number 20240240353
- Publication date Jul 18, 2024
- Hanwha Solutions Corporation
- Young Min LEE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD, APPARATUS, SYSTEM AND COMPUTER STORAGE MEDIUM OF CONTROLLIN...
- Publication number 20240218556
- Publication date Jul 4, 2024
- ZING SEMICONDUCTOR CORPORATION
- Weimin SHEN
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWING METHOD, APPARATUS AND RF-SOI SUBSTRATE
- Publication number 20240218564
- Publication date Jul 4, 2024
- ZING SEMICONDUCTOR CORPORATION
- Xing WEI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF MANUFA...
- Publication number 20240191389
- Publication date Jun 13, 2024
- Samsung Electronics Co., Ltd.
- Hyeyun PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of producing a crystal for a scintillation crystal detector...
- Publication number 20240183061
- Publication date Jun 6, 2024
- CRYTUR, SPOL S R.O.
- Karel BLAZEK
- C01 - INORGANIC CHEMISTRY
Information Patent Application
MOLTEN SILICON FEEDER FOR CONTINUOUS CZOCHRALSKI SINGLE CRYSTALS
- Publication number 20240167189
- Publication date May 23, 2024
- SHANGHAI YINWAN PHOTOELECTRIC TECHNOLOGY CO., LTD
- Xin DING
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEMS AND METHODS FOR COOLING A CHUNK POLYCRYSTALLINE FEEDER
- Publication number 20240167193
- Publication date May 23, 2024
- GLOBALWAFERS CO., LTD.
- JaeWoo Ryu
- C30 - CRYSTAL GROWTH
Information Patent Application
INGOT GROWTH APPARATUS AND METHOD FOR CONTROLLING PRELIMINARY CRUCI...
- Publication number 20240167190
- Publication date May 23, 2024
- Hanwha Solutions Corporation
- Keun Ho KIM
- C30 - CRYSTAL GROWTH
Information Patent Application
Liquid Silicon Spill Containment And Detection System
- Publication number 20240167192
- Publication date May 23, 2024
- Linton Kayex Technology Co., Ltd
- Zhixin LI
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR PRODUCING A DOPED MONOCRYSTALLINE ROD MADE...
- Publication number 20240150927
- Publication date May 9, 2024
- Siltronic AG
- Dieter Knerer
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL PULLING APPARATUS AND METHOD FOR PULLING SINGLE CRYSTAL
- Publication number 20240141548
- Publication date May 2, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka TAKANO
- C30 - CRYSTAL GROWTH
Information Patent Application
VACANCY-RICH SILICON FOR USE WITH A GALLIUM NITRIDE EPITAXIAL LAYER
- Publication number 20240141553
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pu-Fang CHEN
- C30 - CRYSTAL GROWTH
Information Patent Application
PREPARATION METHOD OF P-TYPE HIGH-RESISTANCE AND ULTRA-HIGH-RESISTA...
- Publication number 20240141547
- Publication date May 2, 2024
- Shanghai Institute of Microsystem and Information Technology Chinese Academy...
- Xing Wei
- C30 - CRYSTAL GROWTH

Controlling or regulating

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for producing silicon ingot single crystal

Methods and devices for growing scintillation crystals with multi-c...

Silicon wafer and manufacturing method of the same

Method for producing silicon single crystal

Thermal conductivity estimation method, thermal conductivity estima...

Asymmetric thermal fields for excluding impurities in single crysta...

Determination of mass/time ratios for buffer members used during gr...

Ingot temperature controller and wire sawing device having same

Method for producing a silicon single crystal doped with nitrogen a...

Monocrystal growth method and monocrystal growth device

Crystals for detecting neutrons, gamma rays, and x rays and prepara...

Systems for production of low oxygen content silicon

Ingot puller apparatus having a flange that extends from the funnel...

Quality prediction method, preparation method and system of high re...

Methods for forming single crystal silicon ingots with improved res...

Quality prediction method, preparation method and system of conduct...

Quality prediction method, preparation method and system of conduct...

Quality prediction method, preparation method and system of high re...

Crystals for detecting neutrons, gamma rays, and x rays and prepara...

Semiconductor crystal growth method and device

Methods for forming a silicon substrate with reduced grown-in nucle...

Methods for preparing an ingot in an ingot puller apparatus and met...

Methods for forming a silicon substrate with reduced grown-in nucle...

Method for pulling a cylindrical crystal from a melt

Process for preparing ingot having reduced distortion at late body...

Radio frequency silicon on insulator structure with superior perfor...

Systems and methods for production of silicon using a horizontal ma...

Indium phosphide substrate, semiconductor epitaxial wafer, method f...

Calcium metaborate birefringent crystal, preparation method and use...

Radio frequency silicon on insulator wafer platform with superior p...

Patents Applicationslast 30 patents

METHOD FOR PREPARING DIRECTIONALLY SOLIDIFIED TiAl ALLOY

ASYMMETRIC THERMAL FIELDS FOR EXCLUDING IMPURITIES IN SINGLE CRYSTA...

INGOT PULLER APPARATUS INCLUDING AUTOMATED CLAMP

PRODUCTION METHOD FOR SILICON MONOCRYSTAL AND PRODUCTION METHOD FOR...

SINGLE-CRYSTAL SILICON CARBIDE WAFER, SINGLE-CRYSTAL SILICON CARBID...

METHOD FOR MANUFACTURING A SILICON INGOT FROM SURFACE-OXIDISED SEEDS

METHOD OF PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER OF MO...

INGOT PULLER APPARATUS HAVING A FLANGE THAT EXTENDS FROM THE FUNNEL...

METHODS OF GROWING SINGLE CRYSTAL INGOTS USING SUSCEPTOR ASSEMBLY W...

Method for Producing Nitrogen-Doped Single Crystal Silicon Ingot an...

Crystal Puller and Method for Pulling Single-Crystal Silicon Ingot,...

APPARATUS FOR MANUFACTURING SINGLE CRYSTAL

Method For Growing Single-Crystal Silicon Ingots and Single-Crystal...

WATER-COOLED SCREEN FOR IMPROVING PULLING RATE OF SILICON CRYSTAL A...

Method and Apparatus for Single Crystal Growth, and Single Crystal

SYSTEMS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON

METHODS FOR PRODUCING SINGLE CRYSTAL SILICON WAFERS FOR INSULATED G...

INTAKE/EXHAUST DEVICE OF APPARATUS FOR CONTINUOUSLY GROWING SILICON...

METHOD, APPARATUS, SYSTEM AND COMPUTER STORAGE MEDIUM OF CONTROLLIN...

CRYSTAL GROWING METHOD, APPARATUS AND RF-SOI SUBSTRATE

METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF MANUFA...

Method of producing a crystal for a scintillation crystal detector...

MOLTEN SILICON FEEDER FOR CONTINUOUS CZOCHRALSKI SINGLE CRYSTALS

SYSTEMS AND METHODS FOR COOLING A CHUNK POLYCRYSTALLINE FEEDER

INGOT GROWTH APPARATUS AND METHOD FOR CONTROLLING PRELIMINARY CRUCI...

Liquid Silicon Spill Containment And Detection System

APPARATUS AND METHOD FOR PRODUCING A DOPED MONOCRYSTALLINE ROD MADE...

SINGLE CRYSTAL PULLING APPARATUS AND METHOD FOR PULLING SINGLE CRYSTAL

VACANCY-RICH SILICON FOR USE WITH A GALLIUM NITRIDE EPITAXIAL LAYER

PREPARATION METHOD OF P-TYPE HIGH-RESISTANCE AND ULTRA-HIGH-RESISTA...