Controlling the interface between substrate and epitaxial layer

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H01L21/02694

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02694Controlling the interface between substrate and epitaxial layer

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device, method of manufacturing semiconductor device,...
- Patent number 12,148,666
- Issue date Nov 19, 2024
- Kioxia Corporation
- Hidekazu Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric field management in semiconductor devices
- Patent number 12,106,960
- Issue date Oct 1, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-temperature method for transfer and healing of a semiconductor...
- Patent number 12,027,421
- Issue date Jul 2, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structure
- Patent number 11,955,553
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing SiGe-based zones at different concentrations o...
- Patent number 11,854,805
- Issue date Dec 26, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Joël Kanyandekwe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor interface between gate and active region
- Patent number 11,843,035
- Issue date Dec 12, 2023
- Micron Technology, Inc.
- Moeko Kawana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reprogrammable quantum processor architecture
- Patent number 11,822,163
- Issue date Nov 21, 2023
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gallium nitride semiconductor device and method for manufacturing t...
- Patent number 11,810,783
- Issue date Nov 7, 2023
- Denso Corporation
- Chiaki Sasaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and fabrication method therefor
- Patent number 11,777,024
- Issue date Oct 3, 2023
- Rohm Co., Ltd.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and method of manufacturing thereof
- Patent number 11,749,526
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- I-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide components and methods for producing silicon carbid...
- Patent number 11,715,768
- Issue date Aug 1, 2023
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compliant silicon substrates for heteroepitaxial growth by hydrogen...
- Patent number 11,710,803
- Issue date Jul 25, 2023
- Raytheon Company
- James Pattison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing group III nitride semiconductor substrate,...
- Patent number 11,680,339
- Issue date Jun 20, 2023
- Furukawa Co., Ltd.
- Yujiro Ishihara
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor device, method of manufacturing semiconductor device,...
- Patent number 11,652,000
- Issue date May 16, 2023
- Kioxia Corporation
- Hidekazu Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-zone platen temperature control
- Patent number 11,646,213
- Issue date May 9, 2023
- Applied Materials, Inc.
- Kevin R. Anglin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reprogrammable quantum processor architecture incorporating quantum...
- Patent number 11,635,642
- Issue date Apr 25, 2023
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Material having single crystal perovskite, device including the sam...
- Patent number 11,615,955
- Issue date Mar 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite substrate and manufacturing method thereof
- Patent number 11,600,706
- Issue date Mar 7, 2023
- WAFER WORKS CORPORATION
- Wen-Chung Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structure
- Patent number 11,594,636
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor template and nitride semiconductor device
- Patent number 11,574,809
- Issue date Feb 7, 2023
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device structure and methods of its production
- Patent number RE49285
- Issue date Nov 8, 2022
- SWEGAN AB
- Erik Janzén
Information Patent Grant
Quantum-classic detection interface device
- Patent number 11,454,833
- Issue date Sep 27, 2022
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Finfet quantum structures utilizing quantum particle tunneling thro...
- Patent number 11,454,834
- Issue date Sep 27, 2022
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for manufacturing silicon carbide base body, method for manu...
- Patent number 11,443,946
- Issue date Sep 13, 2022
- Kabushiki Kaisha Toshiba
- Johji Nishio
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for making superlattice structures with reduced defect densi...
- Patent number 11,430,869
- Issue date Aug 30, 2022
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor controlled quantum Pauli interaction gate
- Patent number 11,366,345
- Issue date Jun 21, 2022
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multi-deposition process for high quality gallium nitride device ma...
- Patent number 11,335,557
- Issue date May 17, 2022
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum structure incorporating phi angle control
- Patent number 11,327,345
- Issue date May 10, 2022
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
FinFET quantum structures utilizing quantum particle tunneling thro...
- Patent number 11,327,344
- Issue date May 10, 2022
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum structure incorporating theta angle control
- Patent number 11,300,816
- Issue date Apr 12, 2022
- Equal1.Labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES
- Publication number 20240420957
- Publication date Dec 19, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR WAFER TREATMENT
- Publication number 20240412972
- Publication date Dec 12, 2024
- Hua Hsu Silicon Materials Co., Ltd.
- Chiao-Yang Cheng
- C30 - CRYSTAL GROWTH
Information Patent Application
ENHANCED GAN-BASED HEMT DEVICE, DEVICE EPITAXY, AND PREPARATION MET...
- Publication number 20240363694
- Publication date Oct 31, 2024
- Genettice(Qingdao)Semiconductor Materials Co., Ltd.
- Wang MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR HETEROSTRUCTURE AND METHOD OF MANUFACTURING SAME
- Publication number 20240332019
- Publication date Oct 3, 2024
- Societe de commercialisation des produits de la recherche appliquee SOCPRA Sc...
- Alexandre HEINTZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240332013
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Liang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FAST RECOVERY DIODE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240304664
- Publication date Sep 12, 2024
- Magnachip Semiconductor, Ltd.
- Young Seo JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL MATERIAL AND HETEROSTRUCTURES ON AN INTERMEDIATE PO...
- Publication number 20240047202
- Publication date Feb 8, 2024
- Danmarks Tekniske Universitet
- Abhay Shivayogimath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE AND METHOD FOR FABRICATING SAME
- Publication number 20240014070
- Publication date Jan 11, 2024
- Changxin Memory Technologies, Inc.
- Chuang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
- Publication number 20230411508
- Publication date Dec 21, 2023
- ROHM CO., LTD.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW DEFECT SEMICONDUCTOR FORMATION TECHNIQUES
- Publication number 20230377882
- Publication date Nov 23, 2023
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND FABRICATION METHOD OF THE SEMICONDUCTOR...
- Publication number 20230369412
- Publication date Nov 16, 2023
- ROHM CO., LTD.
- Makoto TAKAMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...
- Publication number 20230245927
- Publication date Aug 3, 2023
- Kioxia Corporation
- Hidekazu HAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Zone Platen Temperature Control
- Publication number 20230238264
- Publication date Jul 27, 2023
- Applied Materials, Inc.
- Kevin R. Anglin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Layer Semiconductor Material Structure and Preparation Method...
- Publication number 20230230831
- Publication date Jul 20, 2023
- INSTITUTE OF MICROELECTRONICS OF THE CHINES ACADEMY OF SCIENCES
- Fengwen MU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN COMPENSATION VIA ION IMPLANTATION IN RELAXED BUFFER LAYER TO...
- Publication number 20230207317
- Publication date Jun 29, 2023
- Intel Corporation
- Cory C. Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Structure
- Publication number 20230197852
- Publication date Jun 22, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES
- Publication number 20230122090
- Publication date Apr 20, 2023
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230066135
- Publication date Mar 2, 2023
- Sanken Electric Co., Ltd
- Toru YOSHIE
- C30 - CRYSTAL GROWTH
Information Patent Application
PREPARATION METHOD FOR SEMICONDUCTOR STRUCTURE
- Publication number 20230038176
- Publication date Feb 9, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Peng XIANG
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE SUBSTRATE, COMPOSITE SUBSTRATE PREPARATION METHOD, SEMICO...
- Publication number 20230009774
- Publication date Jan 12, 2023
- Huawei Technologies Co., Ltd
- Bo Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure
- Publication number 20230010039
- Publication date Jan 12, 2023
- IMEC vzw
- Martin Heilmann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Forming Method for Semiconductor Layer
- Publication number 20230005745
- Publication date Jan 5, 2023
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20220393003
- Publication date Dec 8, 2022
- WAFER WORKS CORPORATION
- Wen-Chung LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF
- Publication number 20220367174
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- I-Sheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN STRUCTURE WITH REDUCED DEFECTS AND MANUFACTURING METHOD THEREOF
- Publication number 20220359199
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING SIGE-BASED ZONES AT DIFFERENT CONCENTRATIONS O...
- Publication number 20220238338
- Publication date Jul 28, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Joël KANYANDEKWE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR INTERFACE BETWEEN GATE AND ACTIVE REGION
- Publication number 20220199779
- Publication date Jun 23, 2022
- Micron Technology, Inc.
- Moeko Kawana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Graphene Hybrids for Biological and Chemical Sensing
- Publication number 20220178831
- Publication date Jun 9, 2022
- The Penn State Research Foundation
- Joshua A. Robinson
- C30 - CRYSTAL GROWTH
Information Patent Application
Source/Drain Structure
- Publication number 20220173239
- Publication date Jun 2, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPROGRAMMABLE QUANTUM PROCESSOR ARCHITECTURE INCORPORATING QUANTUM...
- Publication number 20220137439
- Publication date May 5, 2022
- equal1.labs Inc.
- Dirk Robert Walter Leipold
- B82 - NANO-TECHNOLOGY

Controlling the interface between substrate and epitaxial layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device, method of manufacturing semiconductor device,...

Electric field management in semiconductor devices

Low-temperature method for transfer and healing of a semiconductor...

Source/drain structure

Method for producing SiGe-based zones at different concentrations o...

Transistor interface between gate and active region

Reprogrammable quantum processor architecture

Gallium nitride semiconductor device and method for manufacturing t...

Nitride semiconductor device and fabrication method therefor

Semiconductor substrate and method of manufacturing thereof

Silicon carbide components and methods for producing silicon carbid...

Compliant silicon substrates for heteroepitaxial growth by hydrogen...

Method of manufacturing group III nitride semiconductor substrate,...

Semiconductor device, method of manufacturing semiconductor device,...

Multi-zone platen temperature control

Reprogrammable quantum processor architecture incorporating quantum...

Material having single crystal perovskite, device including the sam...

Composite substrate and manufacturing method thereof

Source/drain structure

Nitride semiconductor template and nitride semiconductor device

Semiconductor device structure and methods of its production

Quantum-classic detection interface device

Finfet quantum structures utilizing quantum particle tunneling thro...

Method for manufacturing silicon carbide base body, method for manu...

Method for making superlattice structures with reduced defect densi...

Semiconductor controlled quantum Pauli interaction gate

Multi-deposition process for high quality gallium nitride device ma...

Quantum structure incorporating phi angle control

FinFET quantum structures utilizing quantum particle tunneling thro...

Quantum structure incorporating theta angle control

Patents Applicationslast 30 patents

ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES

METHOD FOR WAFER TREATMENT

ENHANCED GAN-BASED HEMT DEVICE, DEVICE EPITAXY, AND PREPARATION MET...

SEMICONDUCTOR HETEROSTRUCTURE AND METHOD OF MANUFACTURING SAME

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

FAST RECOVERY DIODE AND METHOD FOR MANUFACTURING THE SAME

TWO-DIMENSIONAL MATERIAL AND HETEROSTRUCTURES ON AN INTERMEDIATE PO...

CONTACT STRUCTURE AND METHOD FOR FABRICATING SAME

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

LOW DEFECT SEMICONDUCTOR FORMATION TECHNIQUES

SEMICONDUCTOR SUBSTRATE AND FABRICATION METHOD OF THE SEMICONDUCTOR...

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...

Multi-Zone Platen Temperature Control

Multi-Layer Semiconductor Material Structure and Preparation Method...

STRAIN COMPENSATION VIA ION IMPLANTATION IN RELAXED BUFFER LAYER TO...

Source/Drain Structure

ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE

PREPARATION METHOD FOR SEMICONDUCTOR STRUCTURE

COMPOSITE SUBSTRATE, COMPOSITE SUBSTRATE PREPARATION METHOD, SEMICO...

Semiconductor Structure

Forming Method for Semiconductor Layer

COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF

FIN STRUCTURE WITH REDUCED DEFECTS AND MANUFACTURING METHOD THEREOF

METHOD FOR PRODUCING SIGE-BASED ZONES AT DIFFERENT CONCENTRATIONS O...

TRANSISTOR INTERFACE BETWEEN GATE AND ACTIVE REGION

Graphene Hybrids for Biological and Chemical Sensing

Source/Drain Structure

REPROGRAMMABLE QUANTUM PROCESSOR ARCHITECTURE INCORPORATING QUANTUM...