Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells

Industry

CPC
G11C16/3404

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/3404Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells

Industries

Patents Grantslast 30 patents

Information Patent Grant
State look ahead quick pass write algorithm to tighten ongoing natu...
- Patent number 11,972,817
- Issue date Apr 30, 2024
- SanDisk Technologies, LLC
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with data refresh based on data states of adjac...
- Patent number 11,972,812
- Issue date Apr 30, 2024
- SANDISK TECHNOLOGIES LLC
- G11 - INFORMATION STORAGE
Information Patent Grant
Verify techniques for current reduction in a memory device
- Patent number 11,972,814
- Issue date Apr 30, 2024
- SanDisk Technologies, LLC
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-temperature compensation in non-volatile memory devices
- Patent number 11,966,289
- Issue date Apr 23, 2024
- Micron Technology, Inc.
- Andrea Giovanni Xotta
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Key storage device and key generation method
- Patent number 11,961,567
- Issue date Apr 16, 2024
- PUFsecurity Corporation
- Kai-Hsin Chuang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-program of memory cells without intervening erase operations
- Patent number 11,961,565
- Issue date Apr 16, 2024
- Micron Technology, Inc.
- Ezra Edward Hartz
- G11 - INFORMATION STORAGE
Information Patent Grant
Fast bit erase for upper tail tightening of threshold voltage distr...
- Patent number 11,961,566
- Issue date Apr 16, 2024
- Micron Technology, Inc.
- Sheyang Ning
- G11 - INFORMATION STORAGE
Information Patent Grant
Edge word line data retention improvement for memory apparatus with...
- Patent number 11,961,572
- Issue date Apr 16, 2024
- SanDisk Technologies, LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memories having split-gate memory cells
- Patent number 11,955,180
- Issue date Apr 9, 2024
- Micron Technology, Inc.
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive pre-programming
- Patent number 11,955,182
- Issue date Apr 9, 2024
- SanDisk Technologies LLC
- Long Pham
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and data search method for in-memory search
- Patent number 11,955,186
- Issue date Apr 9, 2024
- Macronix International Co., Ltd.
- Po-Hao Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for parallel memory cell access
- Patent number 11,948,638
- Issue date Apr 2, 2024
- Micron Technology, Inc.
- Paolo Fantini
- G11 - INFORMATION STORAGE
Information Patent Grant
Managing digitally-controlled charge pump operation in a memory sub...
- Patent number 11,948,647
- Issue date Apr 2, 2024
- Micron Technology, Inc.
- Michele Piccardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Performing a program operation based on a high voltage pulse to sec...
- Patent number 11,942,160
- Issue date Mar 26, 2024
- Micron Technology, Inc.
- Kishore Kumar Muchherla
- G11 - INFORMATION STORAGE
Information Patent Grant
Stabilization of selector devices in a memory array
- Patent number 11,935,604
- Issue date Mar 19, 2024
- Micron Technology, Inc.
- Avinash Rajagiri
- G11 - INFORMATION STORAGE
Information Patent Grant
Selective data pattern write scrub for a memory system
- Patent number 11,929,127
- Issue date Mar 12, 2024
- Micron Technology, Inc.
- Zhongguang Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and memory system
- Patent number 11,923,020
- Issue date Mar 5, 2024
- Kioxia Corporation
- Hiroyuki Ishii
- G11 - INFORMATION STORAGE
Information Patent Grant
Selection of read offset values in a memory sub-system based on tem...
- Patent number 11,923,021
- Issue date Mar 5, 2024
- Micron Technology, Inc.
- Kishore Kumar Muchherla
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage device and the read operating method thereof
- Patent number 11,923,011
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Jun-Ho Seo
- G11 - INFORMATION STORAGE
Information Patent Grant
Data retention reliability
- Patent number 11,923,019
- Issue date Mar 5, 2024
- SanDisk Technologies LLC
- Xiaojia Jia
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory device
- Patent number 11,915,756
- Issue date Feb 27, 2024
- Kioxia Corporation
- Yasuhiro Shiino
- G11 - INFORMATION STORAGE
Information Patent Grant
Detecting and managing under-program failures in non-volatile memory
- Patent number 11,908,531
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Nikolaos Papandreou
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 11,894,074
- Issue date Feb 6, 2024
- Kioxia Corporation
- Koji Kato
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for programming and verifying data in non-vola...
- Patent number 11,894,076
- Issue date Feb 6, 2024
- SK Hynix Inc.
- Hyung Jin Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory controller, memory system with improved threshold voltage di...
- Patent number 11,894,079
- Issue date Feb 6, 2024
- Samsung Electronics Co., Ltd.
- Hyeji Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-destructive mode cache programming in NAND flash memory devices
- Patent number 11,894,075
- Issue date Feb 6, 2024
- Yangtze Memory Technologies Co. Ltd.
- Jason Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to fix cumulative read induced drain side select gate downsh...
- Patent number 11,894,067
- Issue date Feb 6, 2024
- SanDisk Technologies LLC
- Xiang Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Accessing a multi-level memory cell
- Patent number 11,894,078
- Issue date Feb 6, 2024
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE
Information Patent Grant
Temperature assisted NAND flash management
- Patent number 11,886,313
- Issue date Jan 30, 2024
- INNOGRIT TECHNOLOGIES CO., LTD.
- Gang Zhao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Programming for three-dimensional NAND memory
- Patent number 11,887,671
- Issue date Jan 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
APPARATUS WITH MULTI-BIT CELL READ MECHANISM AND METHODS FOR OPERAT...
- Publication number 20240135996
- Publication date Apr 25, 2024
- Micron Technology, Inc.
- Matteo Impala'
- G11 - INFORMATION STORAGE
Information Patent Application
NON-DESTRUCTIVE MODE CACHE PROGRAMMING IN NAND FLASH MEMORY DEVICES
- Publication number 20240127899
- Publication date Apr 18, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jason GUO
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING FOR THREE-DIMENSIONAL NAND MEMORY
- Publication number 20240112739
- Publication date Apr 4, 2024
- Yangtze Memory Technologies Co., Ltd.
- Haibo LI
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID SMART VERIFY FOR QLC/TLC DIE
- Publication number 20240071524
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-PASS CORRECTIVE PROGRAMMING FOR MEMORY CELLS THAT STORE MULTIPL...
- Publication number 20240071510
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Kishore Kumar Muchherla
- G11 - INFORMATION STORAGE
Information Patent Application
NAND DETECT EMPTY PAGE SCAN
- Publication number 20240071514
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Christina Papagianni
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE ERROR AVOIDANCE IN THE MEMORY DEVICES
- Publication number 20240071553
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Li-Te Chang
- G11 - INFORMATION STORAGE
Information Patent Application
DRIFT COMPENSATION FOR CODEWORDS IN MEMORY
- Publication number 20240071511
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Marco Sforzin
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM AND METHOD OF CONTROLLING POWER THEREIN
- Publication number 20240062836
- Publication date Feb 22, 2024
- KIOXIA Corporation
- Hajime MATSUMOTO
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE
- Publication number 20240038304
- Publication date Feb 1, 2024
- SK HYNIX INC.
- Nam Cheol JEON
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY READ CALIBRATION BASED ON MEMORY DEVICE-ORIGINATED METRICS C...
- Publication number 20240029801
- Publication date Jan 25, 2024
- Micron Technology, Inc.
- Dung Viet Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND DATA SEARCH METHOD FOR IN-MEMORY SEARCH
- Publication number 20240021254
- Publication date Jan 18, 2024
- Macronix International Co., Ltd.
- Po-Hao TSENG
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH SUSPENSION PERIOD DURING PROGRAMMING
- Publication number 20240006002
- Publication date Jan 4, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH SHORT PREVENTION
- Publication number 20230420055
- Publication date Dec 28, 2023
- SANDISK TECHNOLOGIES LLC
- Yihang Liu
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH PRECISE PROGRAMMING
- Publication number 20230420061
- Publication date Dec 28, 2023
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SPLIT FOOTER TOPOLOGY TO IMPROVE VMIN AND LEAKAGE POWER FOR REGISTE...
- Publication number 20230410905
- Publication date Dec 21, 2023
- Intel Corporation
- Arindrajit Ghosh
- G11 - INFORMATION STORAGE
Information Patent Application
DATA LATCH PROGRAMMING ALGORITHM FOR MULTI-BIT-PER-CELL MEMORY DEVICES
- Publication number 20230402113
- Publication date Dec 14, 2023
- TORU MIWA
- G11 - INFORMATION STORAGE
Information Patent Application
OPEN BLOCK BOUNDARY GROUP PROGRAMMING FOR NON-VOLATILE MEMORY
- Publication number 20230402109
- Publication date Dec 14, 2023
- Western Digital Technologies, Inc.
- Ke Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
STATE LOOK AHEAD QUICK PASS WRITE ALGORITHM TO TIGHTEN ONGOING NATU...
- Publication number 20230402110
- Publication date Dec 14, 2023
- SANDISK TECHNOLOGIES LLC
- Ke Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
CROSS-TEMPERATURE COMPENSATION IN NON-VOLATILE MEMORY DEVICES
- Publication number 20230393936
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Andrea Giovanni Xotta
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- Publication number 20230395169
- Publication date Dec 7, 2023
- SK HYNIX INC.
- Jong Hoon LEE
- G11 - INFORMATION STORAGE
Information Patent Application
PARTIAL BLOCK HANDLING PROTOCOL IN A NON-VOLATILE MEMORY DEVICE
- Publication number 20230386578
- Publication date Nov 30, 2023
- Micron Technology, Inc.
- Zhongguang Xu
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY
- Publication number 20230386579
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE PRE-PROGRAMMING
- Publication number 20230377656
- Publication date Nov 23, 2023
- Long PHAM
- G11 - INFORMATION STORAGE
Information Patent Application
PUMP SKIP FOR FAST SINGLE-LEVEL CELL NON-VOLATILE MEMORY
- Publication number 20230377657
- Publication date Nov 23, 2023
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
PULSE BASED MULTI-LEVEL CELL PROGRAMMING
- Publication number 20230360681
- Publication date Nov 9, 2023
- Micron Technology, Inc.
- Hernan A. Castro
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF
- Publication number 20230352104
- Publication date Nov 2, 2023
- SK HYNIX INC.
- Jung Woo LEE
- G11 - INFORMATION STORAGE
Information Patent Application
WRITE LATENCY AND ENERGY USING ASYMMETRIC CELL DESIGN
- Publication number 20230352095
- Publication date Nov 2, 2023
- Micron Technology, Inc.
- Mattia Robustelli
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND MULTI-PASS PROGRAM OPERATION THEREOF
- Publication number 20230335205
- Publication date Oct 19, 2023
- Yangtze Memory Technologies Co., Ltd.
- Chao Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
AUTO-CALIBRATED CORRECTIVE READ
- Publication number 20230335200
- Publication date Oct 19, 2023
- Micron Technology, Inc.
- Chengbin Sun
- G11 - INFORMATION STORAGE

Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

State look ahead quick pass write algorithm to tighten ongoing natu...

Non-volatile memory with data refresh based on data states of adjac...

Verify techniques for current reduction in a memory device

Cross-temperature compensation in non-volatile memory devices

Key storage device and key generation method

Multi-program of memory cells without intervening erase operations

Fast bit erase for upper tail tightening of threshold voltage distr...

Edge word line data retention improvement for memory apparatus with...

Memories having split-gate memory cells

Adaptive pre-programming

Memory device and data search method for in-memory search

Techniques for parallel memory cell access

Managing digitally-controlled charge pump operation in a memory sub...

Performing a program operation based on a high voltage pulse to sec...

Stabilization of selector devices in a memory array

Selective data pattern write scrub for a memory system

Memory device and memory system

Selection of read offset values in a memory sub-system based on tem...

Storage device and the read operating method thereof

Data retention reliability

Nonvolatile semiconductor memory device

Detecting and managing under-program failures in non-volatile memory

Semiconductor memory device

Apparatus and method for programming and verifying data in non-vola...

Memory controller, memory system with improved threshold voltage di...

Non-destructive mode cache programming in NAND flash memory devices

Method to fix cumulative read induced drain side select gate downsh...

Accessing a multi-level memory cell

Temperature assisted NAND flash management

Programming for three-dimensional NAND memory

Patents Applicationslast 30 patents

APPARATUS WITH MULTI-BIT CELL READ MECHANISM AND METHODS FOR OPERAT...

NON-DESTRUCTIVE MODE CACHE PROGRAMMING IN NAND FLASH MEMORY DEVICES

PROGRAMMING FOR THREE-DIMENSIONAL NAND MEMORY

HYBRID SMART VERIFY FOR QLC/TLC DIE

TWO-PASS CORRECTIVE PROGRAMMING FOR MEMORY CELLS THAT STORE MULTIPL...

NAND DETECT EMPTY PAGE SCAN

ADAPTIVE ERROR AVOIDANCE IN THE MEMORY DEVICES

DRIFT COMPENSATION FOR CODEWORDS IN MEMORY

MEMORY SYSTEM AND METHOD OF CONTROLLING POWER THEREIN

MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE

MEMORY READ CALIBRATION BASED ON MEMORY DEVICE-ORIGINATED METRICS C...

MEMORY DEVICE AND DATA SEARCH METHOD FOR IN-MEMORY SEARCH

NON-VOLATILE MEMORY WITH SUSPENSION PERIOD DURING PROGRAMMING

NON-VOLATILE MEMORY WITH SHORT PREVENTION

NON-VOLATILE MEMORY WITH PRECISE PROGRAMMING

SPLIT FOOTER TOPOLOGY TO IMPROVE VMIN AND LEAKAGE POWER FOR REGISTE...

DATA LATCH PROGRAMMING ALGORITHM FOR MULTI-BIT-PER-CELL MEMORY DEVICES

OPEN BLOCK BOUNDARY GROUP PROGRAMMING FOR NON-VOLATILE MEMORY

STATE LOOK AHEAD QUICK PASS WRITE ALGORITHM TO TIGHTEN ONGOING NATU...

CROSS-TEMPERATURE COMPENSATION IN NON-VOLATILE MEMORY DEVICES

MEMORY DEVICE AND METHOD OF OPERATING THE SAME

PARTIAL BLOCK HANDLING PROTOCOL IN A NON-VOLATILE MEMORY DEVICE

THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY

ADAPTIVE PRE-PROGRAMMING

PUMP SKIP FOR FAST SINGLE-LEVEL CELL NON-VOLATILE MEMORY

PULSE BASED MULTI-LEVEL CELL PROGRAMMING

NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF

WRITE LATENCY AND ENERGY USING ASYMMETRIC CELL DESIGN

MEMORY DEVICE AND MULTI-PASS PROGRAM OPERATION THEREOF

AUTO-CALIBRATED CORRECTIVE READ