Crystal orientation

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H01L21/02609

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02609Crystal orientation

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method
- Patent number 12,266,687
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having specified relative material concentrati...
- Patent number 12,218,144
- Issue date Feb 4, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around transistor with strained channels
- Patent number 12,211,897
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-En Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide semiconductor film and semiconductor device
- Patent number 12,206,023
- Issue date Jan 21, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Masahiro Takahashi
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Apparatus for integrated microwave photonics on a sapphire platform...
- Patent number 12,199,130
- Issue date Jan 14, 2025
- Board of Trustees of the University of Arkansas
- Shui-Qing Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating hexagonal boron nitride
- Patent number 12,180,584
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Changseok Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Growth of cubic crystalline phase structure on silicon substrates a...
- Patent number 12,183,852
- Issue date Dec 31, 2024
- Steven R. J. Brueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned hybrid substrate stacked gate-all-around transistors
- Patent number 12,176,348
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-polar III-nitride binary and ternary materials, method for obta...
- Patent number 12,148,612
- Issue date Nov 19, 2024
- Mengyao Xie
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device
- Patent number 12,148,814
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor template, method for manufacturing nitride se...
- Patent number 12,129,572
- Issue date Oct 29, 2024
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Biaxially oriented SiC composite substrate and semiconductor device...
- Patent number 12,125,883
- Issue date Oct 22, 2024
- NGK Insulators, Ltd.
- Morimichi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonpolar or semipolar group III-nitride substrates
- Patent number 12,106,959
- Issue date Oct 1, 2024
- Saphlux, Inc.
- Jie Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor structure, nitride semiconductor device, and...
- Patent number 12,100,936
- Issue date Sep 24, 2024
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Toshiyuki Takizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain epitaxial structures for semiconductor devices
- Patent number 12,100,626
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC composite substrate including biaxially oreinted SiC layer and...
- Patent number 12,080,551
- Issue date Sep 3, 2024
- NGK Insulators, Ltd.
- Risa Miyakaze
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Laminate substrate, freestanding substrate, method for manufacturin...
- Patent number 12,040,362
- Issue date Jul 16, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi Noguchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor devices and methods of manufacture
- Patent number 12,033,853
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide epitaxial substrate and me...
- Patent number 12,020,927
- Issue date Jun 25, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya Miyase
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for fabricating field-effect transistor
- Patent number 12,020,931
- Issue date Jun 25, 2024
- Nippon Telegraph and Telephone Corporation
- Yuki Yoshiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method of manufacturing sil...
- Patent number 12,020,924
- Issue date Jun 25, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya Miyase
- C30 - CRYSTAL GROWTH
Information Patent Grant
Replacement-channel fabrication of III-V nanosheet devices
- Patent number 11,990,530
- Issue date May 21, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor nanowire device having (111)-plane channel sidewalls
- Patent number 11,990,476
- Issue date May 21, 2024
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing sputtering target, method for forming oxid...
- Patent number 11,967,505
- Issue date Apr 23, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for manufacturing single-crystal semiconductor layer, struct...
- Patent number 11,948,795
- Issue date Apr 2, 2024
- IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Myung Mo Sung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Dielectric thin-film structure and electronic device including the...
- Patent number 11,935,916
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Hyangsook Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal semiconductor structure and method of manufacturing...
- Patent number 11,923,195
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Junhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin loss prevention
- Patent number 11,923,250
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Ju Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor manufacturing method
- Patent number 11,915,978
- Issue date Feb 27, 2024
- Nippon Telegraph and Telephone Corporation
- Takuya Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride semiconductor substrate, nitride s...
- Patent number 11,908,688
- Issue date Feb 20, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SOURCE/DRAIN REGIONS FOR NANOSHEET DEVICES
- Publication number 20250098245
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Sagarika Mukesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium-Oxide-On-Silicon (GaOxS)
- Publication number 20250087484
- Publication date Mar 13, 2025
- Board of Regents, The University of Texas System
- Alexander A. Demkov
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Carbide Epitaxy
- Publication number 20250079165
- Publication date Mar 6, 2025
- ThinSiC Inc.
- Tirunelveli Subramaniam Ravi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...
- Publication number 20250059674
- Publication date Feb 20, 2025
- Anvil Semiconductors Ltd
- Martin Steven Mark LAMB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE, MANUFACTURING METHOD T...
- Publication number 20250056854
- Publication date Feb 13, 2025
- Dynax Semiconductor, Inc.
- Hui ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240395867
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240395906
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Georgios VELLIANITIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN EPITAXIAL STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20240363437
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR WAFER, AND METHOD FOR MANUFA...
- Publication number 20240355621
- Publication date Oct 24, 2024
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240332010
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS COMPRISING CRYSTALLINE SEMICONDUCTOR MATERIALS AND METAL...
- Publication number 20240334676
- Publication date Oct 3, 2024
- Micron Technology, Inc.
- Jay S. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAMINATE SUBSTRATE, FREESTANDING SUBSTRATE, METHOD FOR MANUFACTURIN...
- Publication number 20240332362
- Publication date Oct 3, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi NOGUCHI
- B82 - NANO-TECHNOLOGY
Information Patent Application
METAL OXIDE FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR EVALUATING M...
- Publication number 20240321577
- Publication date Sep 26, 2024
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Toshimitsu OBONAI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...
- Publication number 20240234135
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Junhee CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHOD AND MANUFACTURING...
- Publication number 20240234137
- Publication date Jul 11, 2024
- KYOCERA CORPORATION
- Takeshi KAMIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE BASED ON IGO CHANNEL LAYER AND METHOD OF FABRICATING...
- Publication number 20240224527
- Publication date Jul 4, 2024
- Industry-University Cooperation Foundation Hanyang University
- Chang Hwan CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin Film Transistor, Manufacturing Method Thereof and Display Appa...
- Publication number 20240204108
- Publication date Jun 20, 2024
- LG Display Co., Ltd.
- Sunggu Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING AN EPITAXIAL LAYER
- Publication number 20240203730
- Publication date Jun 20, 2024
- ASM IP HOLDING B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTALLINE OXIDE FILM AND SEMICONDUCTOR DEVICE
- Publication number 20240170285
- Publication date May 23, 2024
- FLOSFIA INC.
- Kentaro KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME
- Publication number 20240136441
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ken-Ichi Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHOD AND MANUFACTURING...
- Publication number 20240136177
- Publication date Apr 25, 2024
- KYOCERA CORPORATION
- Takeshi KAMIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND METHODS THEREOF
- Publication number 20240113173
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Ju Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20240105449
- Publication date Mar 28, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
Fin Loss Prevention
- Publication number 20240087961
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ju CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGIO...
- Publication number 20240088266
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
- Publication number 20240079499
- Publication date Mar 7, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Masahiro TAKAHASHI
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR MANUFACTURING SELF-SUPPORTING GALLIUM NITRIDE SUBSTRATE
- Publication number 20240063016
- Publication date Feb 22, 2024
- SINO NITRIDE SEMICONDUCTOR CO., LTD.
- Junjie REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for Forming Cubic Silicon Carbide and Heterojunction Sili...
- Publication number 20240047207
- Publication date Feb 8, 2024
- Christian Zmoelnig
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240021668
- Publication date Jan 18, 2024
- Japan Display Inc.
- Hajime WATAKABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20230386827
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS

Crystal orientation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method

Semiconductor device having specified relative material concentrati...

Gate-all-around transistor with strained channels

Oxide semiconductor film and semiconductor device

Apparatus for integrated microwave photonics on a sapphire platform...

Method of fabricating hexagonal boron nitride

Growth of cubic crystalline phase structure on silicon substrates a...

Self-aligned hybrid substrate stacked gate-all-around transistors

Non-polar III-nitride binary and ternary materials, method for obta...

Semiconductor device

Nitride semiconductor template, method for manufacturing nitride se...

Biaxially oriented SiC composite substrate and semiconductor device...

Nonpolar or semipolar group III-nitride substrates

Nitride semiconductor structure, nitride semiconductor device, and...

Source/drain epitaxial structures for semiconductor devices

SiC composite substrate including biaxially oreinted SiC layer and...

Laminate substrate, freestanding substrate, method for manufacturin...

Semiconductor devices and methods of manufacture

Method for manufacturing silicon carbide epitaxial substrate and me...

Method for fabricating field-effect transistor

Silicon carbide epitaxial substrate and method of manufacturing sil...

Replacement-channel fabrication of III-V nanosheet devices

Semiconductor nanowire device having (111)-plane channel sidewalls

Method for manufacturing sputtering target, method for forming oxid...

Method for manufacturing single-crystal semiconductor layer, struct...

Dielectric thin-film structure and electronic device including the...

Single crystal semiconductor structure and method of manufacturing...

Fin loss prevention

Transistor manufacturing method

Method for manufacturing nitride semiconductor substrate, nitride s...

Patents Applicationslast 30 patents

SOURCE/DRAIN REGIONS FOR NANOSHEET DEVICES

Gallium-Oxide-On-Silicon (GaOxS)

Silicon Carbide Epitaxy

REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...

EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE, MANUFACTURING METHOD T...

SEMICONDUCTOR DEVICE AND METHOD

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SOURCE/DRAIN EPITAXIAL STRUCTURES FOR SEMICONDUCTOR DEVICES

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR WAFER, AND METHOD FOR MANUFA...

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

APPARATUS COMPRISING CRYSTALLINE SEMICONDUCTOR MATERIALS AND METAL...

LAMINATE SUBSTRATE, FREESTANDING SUBSTRATE, METHOD FOR MANUFACTURIN...

METAL OXIDE FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR EVALUATING M...

SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...

SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHOD AND MANUFACTURING...

MEMORY DEVICE BASED ON IGO CHANNEL LAYER AND METHOD OF FABRICATING...

Thin Film Transistor, Manufacturing Method Thereof and Display Appa...

METHOD OF FORMING AN EPITAXIAL LAYER

CRYSTALLINE OXIDE FILM AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME

SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHOD AND MANUFACTURING...

SEMICONDUCTOR STRUCTURES AND METHODS THEREOF

CONDUCTIVE C-PLANE GaN SUBSTRATE

Fin Loss Prevention

EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGIO...

OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SELF-SUPPORTING GALLIUM NITRIDE SUBSTRATE

Technique for Forming Cubic Silicon Carbide and Heterojunction Sili...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE