Crystal orientation

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H01L21/02516

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02516Crystal orientation

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Self-assembled borophene/graphene nanoribbon mixed-dimensional hete...
- Patent number 12,116,279
- Issue date Oct 15, 2024
- Northwestern University
- Mark C. Hersam
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride semiconductor structure, nitride semiconductor device, and...
- Patent number 12,100,936
- Issue date Sep 24, 2024
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Toshiyuki Takizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, semiconductor device, and manufacturing me...
- Patent number 12,074,201
- Issue date Aug 27, 2024
- Rohm Co., Ltd.
- Takuji Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, semiconductor device, and manufacturing me...
- Patent number 12,040,363
- Issue date Jul 16, 2024
- Rohm Co., Ltd.
- Takuji Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating field-effect transistor
- Patent number 12,020,931
- Issue date Jun 25, 2024
- Nippon Telegraph and Telephone Corporation
- Yuki Yoshiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial layers with discontinued aluminium content for III-nitrid...
- Patent number 11,942,521
- Issue date Mar 26, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Peng-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric thin-film structure and electronic device including the...
- Patent number 11,935,916
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Hyangsook Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group-III nitride devices and systems on IBAD-textured substrates
- Patent number RE49869
- Issue date Mar 12, 2024
- iBeam Materials, Inc.
- Vladimir Matias
Information Patent Grant
Single crystal semiconductor structure and method of manufacturing...
- Patent number 11,923,195
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Junhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seed layer for ferroelectric memory device and manufacturing method...
- Patent number 11,869,766
- Issue date Jan 9, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor and manufacturing method thereof, array substr...
- Patent number 11,670,702
- Issue date Jun 6, 2023
- Beijing Boe Display Technology Co., Ltd.
- Bingqiang Gui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride substrate and manufacturing method of nitride semic...
- Patent number 11,670,687
- Issue date Jun 6, 2023
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor epitaxy bordering isolation structure
- Patent number 11,658,032
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Chin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of orientation-patterned templates on common...
- Patent number 11,646,201
- Issue date May 9, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material having single crystal perovskite, device including the sam...
- Patent number 11,615,955
- Issue date Mar 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric thin-film structure and electronic device including the...
- Patent number 11,569,341
- Issue date Jan 31, 2023
- Samsung Electronics Co., Ltd.
- Hyangsook Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tilted nanowire transistor
- Patent number 11,515,430
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for integration of elemental and compound semiconductors on...
- Patent number 11,328,927
- Issue date May 10, 2022
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seed layer for ferroelectric memory device and manufacturing method...
- Patent number 11,302,529
- Issue date Apr 12, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistivity silicon-on-insulator substrate having enhanced cha...
- Patent number 11,239,107
- Issue date Feb 1, 2022
- GlobalWafers Co., Ltd.
- Gang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Foundation substrate for producing diamond film and method for prod...
- Patent number 11,180,865
- Issue date Nov 23, 2021
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi Noguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming gallium nitride film over SOI substrate
- Patent number 11,145,507
- Issue date Oct 12, 2021
- WAFER WORKS CORPORATION
- Ping-Hai Chiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral semiconductor nanotube with hexagonal shape
- Patent number 11,120,991
- Issue date Sep 14, 2021
- International Business Machines Corporation
- Juntao Li
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for fabrication of orientation-patterned templates on common...
- Patent number 11,087,975
- Issue date Aug 10, 2021
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-crystal rare earth oxide grown on III-V compound
- Patent number 11,081,339
- Issue date Aug 3, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuanhsiung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor template and nitride semiconductor device
- Patent number 11,075,077
- Issue date Jul 27, 2021
- SCIOCS COMPANY LIMITED
- Hajime Fujikura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure semiconductor device and manufacturing method
- Patent number 11,037,782
- Issue date Jun 15, 2021
- Comptek Solutions Oy
- Johnny Dahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistor having hydrogen-blocking layer and display app...
- Patent number 11,011,650
- Issue date May 18, 2021
- LG Display Co., Ltd.
- Seoyeon Im
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface charge reduction for SiGe surface
- Patent number 10,971,626
- Issue date Apr 6, 2021
- International Business Machines Corporation
- Devendra Sadana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline ceramic substrate and method of manufacture
- Patent number 10,964,535
- Issue date Mar 30, 2021
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...
- Publication number 20240417882
- Publication date Dec 19, 2024
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20240339320
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING ME...
- Publication number 20240321970
- Publication date Sep 26, 2024
- ROHM CO., LTD.
- Takuji MAEKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...
- Publication number 20240234135
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Junhee CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE
- Publication number 20240222439
- Publication date Jul 4, 2024
- M7D Corporation
- John P. Ciraldo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME
- Publication number 20240136441
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ken-Ichi Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED LAYER FOR FERROELECTRIC MEMORY DEVICE AND MANUFACTURING METHOD...
- Publication number 20240087887
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN-CHIEH LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC THIN-FILM STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE...
- Publication number 20230154973
- Publication date May 18, 2023
- Samsung Electronics Co., Ltd.
- Hyangsook LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ASSEMBLED BOROPHENE/GRAPHENE NANORIBBON MIXED-DIMENSIONAL HETE...
- Publication number 20230008590
- Publication date Jan 12, 2023
- Northwestern University
- Mark C. Hersam
- B82 - NANO-TECHNOLOGY
Information Patent Application
Epitaxial Layers With Discontinued Aluminium Content For Iii-Nitrid...
- Publication number 20220376057
- Publication date Nov 24, 2022
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Peng-Yi WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...
- Publication number 20220285151
- Publication date Sep 8, 2022
- Samsung Electronics Co., Ltd.
- Junhee CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED LAYER FOR FERROELECTRIC MEMORY DEVICE AND MANUFACTURING METHOD...
- Publication number 20220223413
- Publication date Jul 14, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN-CHIEH LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING ME...
- Publication number 20220157943
- Publication date May 19, 2022
- ROHM CO., LTD.
- Takuji MAEKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE
- Publication number 20220059341
- Publication date Feb 24, 2022
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for Fabricating Field-Effect Transistor
- Publication number 20220051889
- Publication date Feb 17, 2022
- Nippon Telegraph and Telephone Corporation
- Yuki Yoshiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED LAYER FOR FERROELECTRIC MEMORY DEVICE AND MANUFACTURING METHOD...
- Publication number 20220013353
- Publication date Jan 13, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN-CHIEH LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTR...
- Publication number 20210210622
- Publication date Jul 8, 2021
- BOE TECHNOLOGY GROUP CO., LTD.
- Bingqiang Gui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Epitaxy Bordering Isolation Structure
- Publication number 20210210350
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Chin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE
- Publication number 20210183642
- Publication date Jun 17, 2021
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING GALLIUM NITRIDE FILM OVER SOI SUBSTRATE
- Publication number 20210183652
- Publication date Jun 17, 2021
- WAFER WORKS CORPORATION
- Ping-Hai CHIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROSTRUCTURE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20210183649
- Publication date Jun 17, 2021
- Comptek Solutions Oy
- Johnny DAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL GRAINS COPPER COLUMNAR SHAPE PATTERN ELECTRICAL CONNECTED T...
- Publication number 20210082830
- Publication date Mar 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Ming Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE HAVING ENHANCED CHA...
- Publication number 20210013093
- Publication date Jan 14, 2021
- GLOBALWAFERS CO., LTD.
- Gang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MATERIAL HAVING SINGLE CRYSTAL PEROVSKITE, DEVICE INCLUDING THE SAM...
- Publication number 20200388490
- Publication date Dec 10, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Yu YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE HAVING ENHANCED CHA...
- Publication number 20200335389
- Publication date Oct 22, 2020
- GLOBALWAFERS CO., LTD.
- Gang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...
- Publication number 20200321438
- Publication date Oct 8, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke Tsukada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE
- Publication number 20200234945
- Publication date Jul 23, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TILTED NANOWIRE TRANSISTOR
- Publication number 20200212228
- Publication date Jul 2, 2020
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Epitaxy Bordering Isolation Structure
- Publication number 20200126793
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Chin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE HAVING ENHANCED CHA...
- Publication number 20200126847
- Publication date Apr 23, 2020
- GLOBALWAFERS CO., LTD.
- Gang Wang
- H01 - BASIC ELECTRIC ELEMENTS

Crystal orientation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Self-assembled borophene/graphene nanoribbon mixed-dimensional hete...

Nitride semiconductor structure, nitride semiconductor device, and...

Semiconductor substrate, semiconductor device, and manufacturing me...

Semiconductor substrate, semiconductor device, and manufacturing me...

Method for fabricating field-effect transistor

Epitaxial layers with discontinued aluminium content for III-nitrid...

Dielectric thin-film structure and electronic device including the...

Group-III nitride devices and systems on IBAD-textured substrates

Single crystal semiconductor structure and method of manufacturing...

Seed layer for ferroelectric memory device and manufacturing method...

Thin film transistor and manufacturing method thereof, array substr...

Gallium nitride substrate and manufacturing method of nitride semic...

Semiconductor epitaxy bordering isolation structure

Method for fabrication of orientation-patterned templates on common...

Material having single crystal perovskite, device including the sam...

Dielectric thin-film structure and electronic device including the...

Tilted nanowire transistor

System for integration of elemental and compound semiconductors on...

Seed layer for ferroelectric memory device and manufacturing method...

High resistivity silicon-on-insulator substrate having enhanced cha...

Foundation substrate for producing diamond film and method for prod...

Method of forming gallium nitride film over SOI substrate

Lateral semiconductor nanotube with hexagonal shape

Method for fabrication of orientation-patterned templates on common...

Single-crystal rare earth oxide grown on III-V compound

Nitride semiconductor template and nitride semiconductor device

Heterostructure semiconductor device and manufacturing method

Thin-film transistor having hydrogen-blocking layer and display app...

Interface charge reduction for SiGe surface

Polycrystalline ceramic substrate and method of manufacture

Patents Applicationslast 30 patents

SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...

CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING ME...

SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...

SEMICONDUCTOR SUBSTRATE

SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME

SEED LAYER FOR FERROELECTRIC MEMORY DEVICE AND MANUFACTURING METHOD...

DIELECTRIC THIN-FILM STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE...

SELF-ASSEMBLED BOROPHENE/GRAPHENE NANORIBBON MIXED-DIMENSIONAL HETE...

Epitaxial Layers With Discontinued Aluminium Content For Iii-Nitrid...

SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...

SEED LAYER FOR FERROELECTRIC MEMORY DEVICE AND MANUFACTURING METHOD...

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING ME...

POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE

Method for Fabricating Field-Effect Transistor

SEED LAYER FOR FERROELECTRIC MEMORY DEVICE AND MANUFACTURING METHOD...

THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTR...

Semiconductor Epitaxy Bordering Isolation Structure

POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE

METHOD OF FORMING GALLIUM NITRIDE FILM OVER SOI SUBSTRATE

HETEROSTRUCTURE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

CRYSTAL GRAINS COPPER COLUMNAR SHAPE PATTERN ELECTRICAL CONNECTED T...

HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE HAVING ENHANCED CHA...

MATERIAL HAVING SINGLE CRYSTAL PEROVSKITE, DEVICE INCLUDING THE SAM...

HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE HAVING ENHANCED CHA...

GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...

POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE

TILTED NANOWIRE TRANSISTOR

Semiconductor Epitaxy Bordering Isolation Structure

HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE HAVING ENHANCED CHA...