Current-voltage curve

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G11C2213/15Current-voltage curve

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Patents Grantslast 30 patents

Information Patent Grant
Storage device and data writing method
- Patent number 12,100,448
- Issue date Sep 24, 2024
- Huawei Technologies Co., Ltd.
- Bin Gao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Logic drive using standard commodity programmable logic IC chips co...
- Patent number 12,057,837
- Issue date Aug 6, 2024
- iCometrue Company Ltd.
- Jin-Yuan Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory selector threshold voltage recovery
- Patent number 12,014,774
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Elia Ambrosi
- G11 - INFORMATION STORAGE
Information Patent Grant
Program current controller and sense circuit for cross-point memory...
- Patent number 12,002,510
- Issue date Jun 4, 2024
- Micron Technology, Inc.
- Andrea Ghetti
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for reading cross point-type memory array including two-term...
- Patent number 11,996,146
- Issue date May 28, 2024
- Jun-sung Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Processing unit with fast read speed memory device
- Patent number 11,984,163
- Issue date May 14, 2024
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with built-in amplifying function, memory device and me...
- Patent number 11,967,375
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Pre-decoder circuitry
- Patent number 11,967,373
- Issue date Apr 23, 2024
- Micron Technology, Inc.
- Vijayakrishna J. Vankayala
- G11 - INFORMATION STORAGE
Information Patent Grant
RRAM circuit
- Patent number 11,942,150
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Cheng Chou
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array, memory structure and operation method of memory array
- Patent number 11,901,004
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kerem Akarvardar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cell programming that cancels threshold voltage drift
- Patent number 11,887,665
- Issue date Jan 30, 2024
- Micron Technology, Inc.
- Hari Giduturi
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-state programming of memory cells
- Patent number 11,869,588
- Issue date Jan 9, 2024
- Micron Technology, Inc.
- Hernan A. Castro
- G11 - INFORMATION STORAGE
Information Patent Grant
Error detection and correction in memory
- Patent number 11,868,211
- Issue date Jan 9, 2024
- Micron Technology, Inc.
- Joseph M. McCrate
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Compensation for reference transistors and memory cells in analog n...
- Patent number 11,847,557
- Issue date Dec 19, 2023
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Compensation for reference transistors and memory cells in analog n...
- Patent number 11,797,834
- Issue date Oct 24, 2023
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Selector device for two-terminal memory
- Patent number 11,776,626
- Issue date Oct 3, 2023
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrical-current control of structural and physical properties vi...
- Patent number 11,765,989
- Issue date Sep 19, 2023
- The Regents of the University of Colorado
- Gang Cao
- G11 - INFORMATION STORAGE
Information Patent Grant
Logic drive using standard commodity programmable logic IC chips co...
- Patent number 11,711,082
- Issue date Jul 25, 2023
- iCometrue Company Ltd.
- Mou-Shiung Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Increase of a sense current in memory
- Patent number 11,705,195
- Issue date Jul 18, 2023
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual damascene crossbar array for disabling a defective resistive s...
- Patent number 11,682,471
- Issue date Jun 20, 2023
- International Business Machines Corporation
- Joseph F. Maniscalco
- G11 - INFORMATION STORAGE
Information Patent Grant
Two memory cells sensed to determine one data value
- Patent number 11,670,367
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Grant
Fast read speed memory device
- Patent number 11,651,820
- Issue date May 16, 2023
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random-access memory devices and methods of fabrication
- Patent number 11,621,395
- Issue date Apr 4, 2023
- Intel Corporation
- Nathan Strutt
- G11 - INFORMATION STORAGE
Information Patent Grant
Neuromorphic package devices and neuromorphic computing systems
- Patent number 11,620,505
- Issue date Apr 4, 2023
- Samsung Electronics Co., Ltd.
- Jaehun Jang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive random access memory, and method for manufacturing resist...
- Patent number 11,574,678
- Issue date Feb 7, 2023
- FUJITSU SEMICONDUCTOR MEMORY SOLUTION LIMITED
- Tetsuro Tamura
- G11 - INFORMATION STORAGE
Information Patent Grant
PUF with dissolvable conductive paths
- Patent number 11,552,810
- Issue date Jan 10, 2023
- Arizona Board of Regents on Behalf of Northern Arizona University
- Bertrand Francis Cambou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
RRAM current limiting method
- Patent number 11,527,285
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Cheng Chou
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 11,502,249
- Issue date Nov 15, 2022
- Hefei Reliance Memory Limited
- Christophe J. Chevallier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Error detection and correction in memory
- Patent number 11,455,210
- Issue date Sep 27, 2022
- Micron Technology, Inc.
- Joseph M. McCrate
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
System and device including memristor materials in parallel
- Patent number 11,456,418
- Issue date Sep 27, 2022
- Rockwell Collins, Inc.
- Kyle B. Snyder
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
OPERATING METHOD, MEMORY SYSTEM, AND CONTROL CIRCUIT
- Publication number 20240428854
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsien Wu
- G11 - INFORMATION STORAGE
Information Patent Application
CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS
- Publication number 20240395301
- Publication date Nov 28, 2024
- Western Digital Technologies, Inc.
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Application
LOGIC DRIVE USING STANDARD COMMODITY PROGRAMMABLE LOGIC IC CHIPS CO...
- Publication number 20240380401
- Publication date Nov 14, 2024
- iCometrue Company Ltd.
- Jin-Yuan Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY MODULE
- Publication number 20240363160
- Publication date Oct 31, 2024
- Sony Semiconductor Solutions Corporation
- YOTARO MORI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PROGRAM CURRENT CONTROLLER AND SENSE CIRCUIT FOR CROSS-POINT MEMORY...
- Publication number 20240321355
- Publication date Sep 26, 2024
- Micron Technology, Inc.
- Andrea Ghetti
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SELECTOR THRESHOLD VOLTAGE RECOVERY
- Publication number 20240296885
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Elia Ambrosi
- G11 - INFORMATION STORAGE
Information Patent Application
PRE-DECODER CIRCUITRY
- Publication number 20240265965
- Publication date Aug 8, 2024
- Micron Technology, Inc.
- Vijayakrishna J. Vankayala
- G11 - INFORMATION STORAGE
Information Patent Application
RRAM CIRCUIT
- Publication number 20240233820
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Cheng Chou
- G11 - INFORMATION STORAGE
Information Patent Application
ANALOG PROGRAMMABLE RESISTIVE MEMORY
- Publication number 20240237565
- Publication date Jul 11, 2024
- CYBERSWARM, INC.
- Viorel-Georgel Dumitru
- G11 - INFORMATION STORAGE
Information Patent Application
TEMPORAL KERNEL DEVICES, TEMPORAL KERNEL COMPUTING SYSTEMS, AND MET...
- Publication number 20240215265
- Publication date Jun 27, 2024
- Seoul National University R&DB Foundation
- Cheol Seong Hwang
- G11 - INFORMATION STORAGE
Information Patent Application
ANALOG PROGRAMMABLE RESISTIVE MEMORY
- Publication number 20240138275
- Publication date Apr 25, 2024
- CYBERSWARM, INC.
- Viorel-Georgel Dumitru
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-STATE PROGRAMMING OF MEMORY CELLS
- Publication number 20240120006
- Publication date Apr 11, 2024
- Micron Technology, Inc.
- Hernan A. Castro
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY, MEMORY STRUCTURE AND OPERATION METHOD OF MEMORY ARRAY
- Publication number 20230326525
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kerem Akarvardar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LOGIC DRIVE USING STANDARD COMMODITY PROGRAMMABLE LOGIC IC CHIPS CO...
- Publication number 20230299774
- Publication date Sep 21, 2023
- iCometrue Company Ltd.
- Mou-Shiung LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY SELECTOR THRESHOLD VOLTAGE RECOVERY
- Publication number 20230253038
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Elia Ambrosi
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAM CURRENT CONTROLLER AND SENSE CIRCUIT FOR CROSS-POINT MEMORY...
- Publication number 20230245701
- Publication date Aug 3, 2023
- Micron Technology, Inc.
- Andrea Ghetti
- G11 - INFORMATION STORAGE
Information Patent Application
RRAM CIRCUIT
- Publication number 20230072287
- Publication date Mar 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Cheng Chou
- G11 - INFORMATION STORAGE
Information Patent Application
ERROR DETECTION AND CORRECTION IN MEMORY
- Publication number 20230014459
- Publication date Jan 19, 2023
- Micron Technology, Inc.
- Joseph M. McCrate
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Compensation For Reference Transistors And Memory Cells In Analog N...
- Publication number 20220391682
- Publication date Dec 8, 2022
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
COMPENSATION FOR REFERENCE TRANSISTORS AND MEMORY CELLS IN ANALOG N...
- Publication number 20220383087
- Publication date Dec 1, 2022
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THREE-STATE PROGRAMMING OF MEMORY CELLS
- Publication number 20220246210
- Publication date Aug 4, 2022
- Micron Technology, Inc.
- Hernan A. Castro
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL PROGRAMMING THAT CANCELS THRESHOLD VOLTAGE DRIFT
- Publication number 20220238157
- Publication date Jul 28, 2022
- Micron Technology, Inc.
- Hari Giduturi
- G11 - INFORMATION STORAGE
Information Patent Application
FAST READ SPEED MEMORY DEVICE
- Publication number 20220157378
- Publication date May 19, 2022
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR READING CROSS POINT-TYPE MEMORY ARRAY INCLUDING TWO-TERM...
- Publication number 20220148654
- Publication date May 12, 2022
- Jun-sung KIM
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FAST READ SPEED MEMORY DEVICE
- Publication number 20220130459
- Publication date Apr 28, 2022
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Application
INCREASE OF A SENSE CURRENT IN MEMORY
- Publication number 20220108746
- Publication date Apr 7, 2022
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY, AND METHOD FOR MANUFACTURING RESIST...
- Publication number 20220084592
- Publication date Mar 17, 2022
- FUJITSU SEMICONDUCTOR MEMORY SOLUTION LIMITED
- Tetsuro Tamura
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL WITH BUILT-IN AMPLIFYING FUNCTION, MEMORY DEVICE AND ME...
- Publication number 20220076741
- Publication date Mar 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE AND DATA WRITING METHOD
- Publication number 20220076746
- Publication date Mar 10, 2022
- Huawei Technologies Co., Ltd
- Bin GAO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY CELL PROGRAMMING THAT CANCELS THRESHOLD VOLTAGE DRIFT
- Publication number 20220068383
- Publication date Mar 3, 2022
- Micron Technology, Inc.
- Hari Giduturi
- G11 - INFORMATION STORAGE

Current-voltage curve

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Storage device and data writing method

Logic drive using standard commodity programmable logic IC chips co...

Memory selector threshold voltage recovery

Program current controller and sense circuit for cross-point memory...

Method for reading cross point-type memory array including two-term...

Processing unit with fast read speed memory device

Memory cell with built-in amplifying function, memory device and me...

Pre-decoder circuitry

RRAM circuit

Memory array, memory structure and operation method of memory array

Memory cell programming that cancels threshold voltage drift

Three-state programming of memory cells

Error detection and correction in memory

Compensation for reference transistors and memory cells in analog n...

Compensation for reference transistors and memory cells in analog n...

Selector device for two-terminal memory

Electrical-current control of structural and physical properties vi...

Logic drive using standard commodity programmable logic IC chips co...

Increase of a sense current in memory

Dual damascene crossbar array for disabling a defective resistive s...

Two memory cells sensed to determine one data value

Fast read speed memory device

Resistive random-access memory devices and methods of fabrication

Neuromorphic package devices and neuromorphic computing systems

Resistive random access memory, and method for manufacturing resist...

PUF with dissolvable conductive paths

RRAM current limiting method

Memory element with a reactive metal layer

Error detection and correction in memory

System and device including memristor materials in parallel

Patents Applicationslast 30 patents

OPERATING METHOD, MEMORY SYSTEM, AND CONTROL CIRCUIT

CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS

LOGIC DRIVE USING STANDARD COMMODITY PROGRAMMABLE LOGIC IC CHIPS CO...

MEMORY MODULE

PROGRAM CURRENT CONTROLLER AND SENSE CIRCUIT FOR CROSS-POINT MEMORY...

MEMORY SELECTOR THRESHOLD VOLTAGE RECOVERY

PRE-DECODER CIRCUITRY

RRAM CIRCUIT

ANALOG PROGRAMMABLE RESISTIVE MEMORY

TEMPORAL KERNEL DEVICES, TEMPORAL KERNEL COMPUTING SYSTEMS, AND MET...

ANALOG PROGRAMMABLE RESISTIVE MEMORY

THREE-STATE PROGRAMMING OF MEMORY CELLS

MEMORY ARRAY, MEMORY STRUCTURE AND OPERATION METHOD OF MEMORY ARRAY

LOGIC DRIVE USING STANDARD COMMODITY PROGRAMMABLE LOGIC IC CHIPS CO...

MEMORY SELECTOR THRESHOLD VOLTAGE RECOVERY

PROGRAM CURRENT CONTROLLER AND SENSE CIRCUIT FOR CROSS-POINT MEMORY...

RRAM CIRCUIT

ERROR DETECTION AND CORRECTION IN MEMORY

Compensation For Reference Transistors And Memory Cells In Analog N...

COMPENSATION FOR REFERENCE TRANSISTORS AND MEMORY CELLS IN ANALOG N...

THREE-STATE PROGRAMMING OF MEMORY CELLS

MEMORY CELL PROGRAMMING THAT CANCELS THRESHOLD VOLTAGE DRIFT

FAST READ SPEED MEMORY DEVICE

METHOD FOR READING CROSS POINT-TYPE MEMORY ARRAY INCLUDING TWO-TERM...

FAST READ SPEED MEMORY DEVICE

INCREASE OF A SENSE CURRENT IN MEMORY

RESISTIVE RANDOM ACCESS MEMORY, AND METHOD FOR MANUFACTURING RESIST...

MEMORY CELL WITH BUILT-IN AMPLIFYING FUNCTION, MEMORY DEVICE AND ME...

STORAGE DEVICE AND DATA WRITING METHOD

MEMORY CELL PROGRAMMING THAT CANCELS THRESHOLD VOLTAGE DRIFT