Deposition of Schottky electrodes

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H01L21/28537

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28537Deposition of Schottky electrodes

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Schottky barrier diode with reduced leakage current and method of f...
- Patent number 11,984,490
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,894,258
- Issue date Feb 6, 2024
- Fuji Electric Co., Ltd.
- Takahiro Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a grid
- Patent number 11,876,116
- Issue date Jan 16, 2024
- II-VI DELAWARE, INC.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a semiconductor device with efficient edge...
- Patent number 11,854,809
- Issue date Dec 26, 2023
- STMicroelectronics S.r.l.
- Edoardo Zanetti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing Schottky barrier height and semiconductor devic...
- Patent number 11,817,481
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Hsiang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction barrier Schottky diode device and method for fabricating t...
- Patent number 11,769,841
- Issue date Sep 26, 2023
- TAIPEI ANJET CORPORATION
- Nobuo Machida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming microelectronic devices
- Patent number 11,770,932
- Issue date Sep 26, 2023
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded doping in power devices
- Patent number 11,705,490
- Issue date Jul 18, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction barrier Schottky diode device and method for fabricating t...
- Patent number 11,646,382
- Issue date May 9, 2023
- TAIPEI ANJET CORPORATION
- Nobuo Machida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated contact silicide with tunable work functions
- Patent number 11,626,288
- Issue date Apr 11, 2023
- Applied Materials, Inc.
- Raymond Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a semiconductor device with efficient edge...
- Patent number 11,545,362
- Issue date Jan 3, 2023
- STMicroelectronics S.r.l.
- Edoardo Zanetti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing Schottky barrier height and semiconductor devic...
- Patent number 11,502,174
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Hsiang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming microelectronic devices, and related microelectr...
- Patent number 11,482,538
- Issue date Oct 25, 2022
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,362,202
- Issue date Jun 14, 2022
- Fuji Electric Co., Ltd.
- Takahiro Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 11,355,613
- Issue date Jun 7, 2022
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode with reduced leakage current and method of f...
- Patent number 11,349,010
- Issue date May 31, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a grid
- Patent number 11,342,423
- Issue date May 24, 2022
- II-VI DELAWARE, INC.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with metal source and drain contacts including a Heusle...
- Patent number 11,107,908
- Issue date Aug 31, 2021
- Intel Corporation
- Sasikanth Manipatruni
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for depinning the fermi level of a semiconductor at an elect...
- Patent number 11,056,569
- Issue date Jul 6, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate field effect transistor having passivated schottky b...
- Patent number 11,043,571
- Issue date Jun 22, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a semiconductor device with efficient edge...
- Patent number 11,018,008
- Issue date May 25, 2021
- STMicroelectronics S.r.l.
- Edoardo Zanetti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the fermi level of a semiconductor at an elect...
- Patent number 11,018,237
- Issue date May 25, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having diode devices with different barrier he...
- Patent number 10,985,240
- Issue date Apr 20, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Wen-Shun Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 10,950,707
- Issue date Mar 16, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 10,937,880
- Issue date Mar 2, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with shaped portions of elevated source/drain...
- Patent number 10,840,374
- Issue date Nov 17, 2020
- Samsung Electronics Co., Ltd.
- Chung-Hwan Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing Schottky barrier height and semiconductor devic...
- Patent number 10,797,137
- Issue date Oct 6, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Hsiang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device having a Schottky c...
- Patent number 10,763,339
- Issue date Sep 1, 2020
- Infineon Technologies Austria AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including contact structure
- Patent number 10,748,776
- Issue date Aug 18, 2020
- Japan Science and Technology Agency
- Akira Toriumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench power transistor and method of producing the same
- Patent number 10,749,006
- Issue date Aug 18, 2020
- LEADPOWER-SEMI CO., LTD.
- Po-Hsien Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SCHOTTKY BARRIER DIODE WITH REDUCED LEAKAGE CURRENT AND METHOD OF F...
- Publication number 20240258402
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MENG-HAN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240162078
- Publication date May 16, 2024
- FUJI ELECTRIC CO., LTD.
- Takahiro TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...
- Publication number 20240162040
- Publication date May 16, 2024
- STMicroelectronics S.r.l.
- Edoardo ZANETTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A GRID
- Publication number 20240105783
- Publication date Mar 28, 2024
- II-VI Delaware, Inc.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES, MEMORY DEVICES, AND 3D NAND FLASH MEMORY D...
- Publication number 20240015972
- Publication date Jan 11, 2024
- Lodestar Licensing Group LLC
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230411160
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- LI-WEI CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Trench Device Configurations for Radiation-Environment App...
- Publication number 20230352304
- Publication date Nov 2, 2023
- SCDevice LLC
- Sudarsan Uppili
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE WITH CONTACT STRUCTURE INCLUDING AN IMPROVED BARRIER REGION A...
- Publication number 20230223458
- Publication date Jul 13, 2023
- STMicroelectronics S.r.l.
- Ettore CHIACCHIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230137811
- Publication date May 4, 2023
- KYOCERA CORPORATION
- Shingo KABUTOYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...
- Publication number 20230099610
- Publication date Mar 30, 2023
- STMicroelectronics S.r.l.
- Edoardo ZANETTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING MICROELECTRONIC DEVICES
- Publication number 20230057745
- Publication date Feb 23, 2023
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CONTACT SILICIDE WITH TUNABLE WORK FUNCTIONS
- Publication number 20230034058
- Publication date Feb 2, 2023
- Raymond HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION BARRIER SCHOTTKY DIODE DEVICE AND METHOD FOR FABRICATING T...
- Publication number 20230021015
- Publication date Jan 19, 2023
- Taipei ANJET Corporation
- Nobuo MACHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING SCHOTTKY BARRIER HEIGHT AND SEMICONDUCTOR DEVIC...
- Publication number 20220384581
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Hsiang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION BARRIER SCHOTTKY DIODE DEVICE AND METHOD FOR FABRICATING T...
- Publication number 20220367731
- Publication date Nov 17, 2022
- Taipei ANJET Corporation
- Nobuo Machida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220293775
- Publication date Sep 15, 2022
- Fuji Electric Co., Ltd.
- Takahiro TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE WITH REDUCED LEAKAGE CURRENT AND METHOD OF F...
- Publication number 20220285524
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- MENG-HAN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A GRID
- Publication number 20220254887
- Publication date Aug 11, 2022
- II-VI Delaware, Inc.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADED DOPING IN POWER DEVICES
- Publication number 20220254886
- Publication date Aug 11, 2022
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTR...
- Publication number 20220109000
- Publication date Apr 7, 2022
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20210305392
- Publication date Sep 30, 2021
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...
- Publication number 20210249268
- Publication date Aug 12, 2021
- STMicroelectronics S.r.l.
- Edoardo ZANETTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE WITH REDUCED LEAKAGE CURRENT AND METHOD OF F...
- Publication number 20210202716
- Publication date Jul 1, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- MENG-HAN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210050345
- Publication date Feb 18, 2021
- Fuji Electric Co., Ltd.
- Takahiro TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING SCHOTTKY BARRIER HEIGHT AND SEMICONDUCTOR DEVIC...
- Publication number 20210036111
- Publication date Feb 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Hsiang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-SCHOTTKY-LAYER TRENCH JUNCTION BARRIER SCHOTTKY DIODE AND MAN...
- Publication number 20200321477
- Publication date Oct 8, 2020
- AZ Power, Inc
- NA REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DIODE DEVICES WITH DIFFERENT BARRIER HE...
- Publication number 20200286987
- Publication date Sep 10, 2020
- Taiwan Semiconductor Manufacturing company Ltd.
- WEN-SHUN LO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20200273961
- Publication date Aug 27, 2020
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20200273960
- Publication date Aug 27, 2020
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20200243662
- Publication date Jul 30, 2020
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS

Deposition of Schottky electrodes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Schottky barrier diode with reduced leakage current and method of f...

Semiconductor device and manufacturing method thereof

Method for manufacturing a grid

Manufacturing method of a semiconductor device with efficient edge...

Method for reducing Schottky barrier height and semiconductor devic...

Junction barrier Schottky diode device and method for fabricating t...

Methods of forming microelectronic devices

Graded doping in power devices

Junction barrier Schottky diode device and method for fabricating t...

Integrated contact silicide with tunable work functions

Manufacturing method of a semiconductor device with efficient edge...

Method for reducing Schottky barrier height and semiconductor devic...

Methods of forming microelectronic devices, and related microelectr...

Semiconductor device and manufacturing method thereof

Method for depinning the Fermi level of a semiconductor at an elect...

Schottky barrier diode with reduced leakage current and method of f...

Method for manufacturing a grid

Transistors with metal source and drain contacts including a Heusle...

Method for depinning the fermi level of a semiconductor at an elect...

Insulated gate field effect transistor having passivated schottky b...

Manufacturing method of a semiconductor device with efficient edge...

Method for depinning the fermi level of a semiconductor at an elect...

Semiconductor device having diode devices with different barrier he...

Method for depinning the Fermi level of a semiconductor at an elect...

Method for depinning the Fermi level of a semiconductor at an elect...

Semiconductor devices with shaped portions of elevated source/drain...

Method for reducing Schottky barrier height and semiconductor devic...

Method for manufacturing a semiconductor device having a Schottky c...

Semiconductor device including contact structure

Trench power transistor and method of producing the same

Patents Applicationslast 30 patents

SCHOTTKY BARRIER DIODE WITH REDUCED LEAKAGE CURRENT AND METHOD OF F...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...

METHOD FOR MANUFACTURING A GRID

MICROELECTRONIC DEVICES, MEMORY DEVICES, AND 3D NAND FLASH MEMORY D...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Vertical Trench Device Configurations for Radiation-Environment App...

DIODE WITH CONTACT STRUCTURE INCLUDING AN IMPROVED BARRIER REGION A...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...

METHODS OF FORMING MICROELECTRONIC DEVICES

INTEGRATED CONTACT SILICIDE WITH TUNABLE WORK FUNCTIONS

JUNCTION BARRIER SCHOTTKY DIODE DEVICE AND METHOD FOR FABRICATING T...

METHOD FOR REDUCING SCHOTTKY BARRIER HEIGHT AND SEMICONDUCTOR DEVIC...

JUNCTION BARRIER SCHOTTKY DIODE DEVICE AND METHOD FOR FABRICATING T...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SCHOTTKY BARRIER DIODE WITH REDUCED LEAKAGE CURRENT AND METHOD OF F...

METHOD FOR MANUFACTURING A GRID

GRADED DOPING IN POWER DEVICES

METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTR...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...

SCHOTTKY BARRIER DIODE WITH REDUCED LEAKAGE CURRENT AND METHOD OF F...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD FOR REDUCING SCHOTTKY BARRIER HEIGHT AND SEMICONDUCTOR DEVIC...

MULTI-SCHOTTKY-LAYER TRENCH JUNCTION BARRIER SCHOTTKY DIODE AND MAN...

SEMICONDUCTOR DEVICE HAVING DIODE DEVICES WITH DIFFERENT BARRIER HE...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...