Determination of programming status

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GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/34Determination of programming status

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory device with conductive layers separated betwee...
- Patent number 12,230,326
- Issue date Feb 18, 2025
- Kioxia Corporation
- Keisuke Suda
- G11 - INFORMATION STORAGE
Information Patent Grant
Imprint management for memory
- Patent number 12,230,349
- Issue date Feb 18, 2025
- Micron Technology, Inc.
- Shashank Bangalore Lakshman
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic program caching
- Patent number 12,230,334
- Issue date Feb 18, 2025
- INTEL NDTM US LLC
- Aliasgar S. Madraswala
- G11 - INFORMATION STORAGE
Information Patent Grant
Data latch programming algorithm for multi-bit-per-cell memory devices
- Patent number 12,230,335
- Issue date Feb 18, 2025
- SanDisk Technologies LLC
- Toru Miwa
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of detecting a not-open string (N/O string), converting targ...
- Patent number 12,230,343
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Bohchang Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Page buffer supporting different bit line forcing operations using...
- Patent number 12,229,419
- Issue date Feb 18, 2025
- Yangtze Memory Technologies Co., Ltd.
- Weijun Wan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory device
- Patent number 12,230,327
- Issue date Feb 18, 2025
- Kioxia Corporation
- Hiroshi Maejima
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory device and data recover read method thereof
- Patent number 12,230,329
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Eunhyang Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device, and method operating based on status c...
- Patent number 12,230,336
- Issue date Feb 18, 2025
- SK hynix Inc.
- Byoung Sung You
- G11 - INFORMATION STORAGE
Information Patent Grant
Lifetime mixed level non-volatile memory system
- Patent number 12,224,005
- Issue date Feb 11, 2025
- Vervain, LLC
- G. R. Mohan Rao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor storage device and voltage control method for semicon...
- Patent number 12,224,018
- Issue date Feb 11, 2025
- Kioxia Corporation
- Xu Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Cache processes with adaptive dynamic start voltage calculation for...
- Patent number 12,224,019
- Issue date Feb 11, 2025
- Intel Corporation
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device and memory system
- Patent number 12,224,020
- Issue date Feb 11, 2025
- Kioxia Corporation
- Kenro Kikuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with leakage current verifying circuit for minimizing...
- Patent number 12,224,021
- Issue date Feb 11, 2025
- Winbond Electronics Corp.
- Koying Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device, memory system, and method of operating the same
- Patent number 12,224,004
- Issue date Feb 11, 2025
- Yangtze Memory Technologies Co., Ltd.
- Weijun Wan
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device and programming method thereof
- Patent number 12,217,807
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Yonghyuk Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods and apparatus for NAND flash memory
- Patent number 12,217,808
- Issue date Feb 4, 2025
- NEO Semiconductor, Inc.
- Fu-Chang Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for threshold voltage scans
- Patent number 12,217,806
- Issue date Feb 4, 2025
- Micron Technology, Inc.
- Aniello Palomba
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device
- Patent number 12,211,558
- Issue date Jan 28, 2025
- Kioxia Corporation
- Yasuhiro Uchimura
- G11 - INFORMATION STORAGE
Information Patent Grant
Fast two-sided corrective read operation in a memory device
- Patent number 12,211,560
- Issue date Jan 28, 2025
- Micron Technology, Inc.
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage device and read recovery method thereof
- Patent number 12,211,565
- Issue date Jan 28, 2025
- SK Hynix Inc.
- In Jong Jang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory system with verify operations of odd and even word lines
- Patent number 12,211,567
- Issue date Jan 28, 2025
- Kioxia Corporation
- Kazutaka Ikegami
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 12,211,557
- Issue date Jan 28, 2025
- Kioxia Corporation
- Kyosuke Sano
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic gate steps for last-level programming to improve write perf...
- Patent number 12,211,563
- Issue date Jan 28, 2025
- Intel Corportaion
- Sagar Upadhyay
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and program operation thereof
- Patent number 12,211,554
- Issue date Jan 28, 2025
- Yangtze Memory Technologies Co., Ltd.
- Kaijin Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Double program debug method for NAND memory using self-verification...
- Patent number 12,211,566
- Issue date Jan 28, 2025
- Yangtze Memory Technologies Co., Ltd.
- Youxin He
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage system and operating method of storage controller
- Patent number 12,211,553
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Won Hee Cho
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Data erasure verification for three-dimensional non-volatile memory
- Patent number 12,211,562
- Issue date Jan 28, 2025
- Yangtze Memory Technologies Co., Ltd.
- Changhyun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device, method for programming memory device, program verifi...
- Patent number 12,211,564
- Issue date Jan 28, 2025
- Yangtze Memory Technologies Co., Ltd.
- Xiaojiang Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
MLC programming techniques in a memory device
- Patent number 12,205,654
- Issue date Jan 21, 2025
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY SYSTEM
- Publication number 20250061954
- Publication date Feb 20, 2025
- KIOXIA Corporation
- Yoshihisa Kojima
- G11 - INFORMATION STORAGE
Information Patent Application
SMART VERIFY ALGORITHM FOR IMPROVING RELIABILITY FOR ULTRA HIGH-PER...
- Publication number 20250061955
- Publication date Feb 20, 2025
- Western Digital Technologies, Inc.
- Kyeongran Yoo
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHODS FOR ERASING FOR NON-VOLATILE MEMORY
- Publication number 20250061947
- Publication date Feb 20, 2025
- Western Digital Technologies, Inc.
- Yi Song
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STATE-DEPENDENT FAIL BIT COUNT CRITERIA FOR MEMORY APPARATUS PROGRA...
- Publication number 20250054556
- Publication date Feb 13, 2025
- Western Digital Technologies, Inc.
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROL METHODS, PARAMETER CALCULATION METHODS, MEMORY AND MEMORY S...
- Publication number 20250054557
- Publication date Feb 13, 2025
- Yangtze Memory Technologies Co., Ltd.
- SanShan Jiao
- G11 - INFORMATION STORAGE
Information Patent Application
FIVE LEVEL CELL PROGRAM ALGORITHM WITH APPENDED BIT LEVEL ERASE FOR...
- Publication number 20250054555
- Publication date Feb 13, 2025
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Application
LIFETIME MIXED LEVEL NON-VOLATILE MEMORY SYSTEM
- Publication number 20250054540
- Publication date Feb 13, 2025
- Vervain, LLC
- G. R. Mohan Rao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DYNAMIC TEMPERATURE COMPENSATION IN A MEMORY COMPONENT
- Publication number 20250044948
- Publication date Feb 6, 2025
- Lodestar Licensing Group, LLC
- Larry J. Koudele
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SHALLOW ERASE FOR ERASE POOL MANAGEMENT
- Publication number 20250046380
- Publication date Feb 6, 2025
- Western Digital Technologies, Inc.
- Albert Bor Kai Chen
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH HIGH PERFORMANCE READ
- Publication number 20250046386
- Publication date Feb 6, 2025
- Western Digital Technologies, Inc.
- Jiahui Yuan
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, MEMORY SYSTEM, AND METHOD OF OPERATING THE SAME
- Publication number 20250046377
- Publication date Feb 6, 2025
- Yangtze Memory Technologies Co., Ltd.
- Weijun WAN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CONFIGURED TO PERFORM A CHANNEL PRECHARGE OPERATION AND METH...
- Publication number 20250046385
- Publication date Feb 6, 2025
- SK HYNIX INC.
- Hee Youl LEE
- G11 - INFORMATION STORAGE
Information Patent Application
SIMULTANEOUS LOWER TAIL VERIFY WITH UPPER TAIL VERIFY
- Publication number 20250046388
- Publication date Feb 6, 2025
- Western Digital Technologies, Inc.
- Yingying Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES USING A DYNAMIC LATCH TO PROVIDE MULTIPLE BIAS VOLTAGES
- Publication number 20250046381
- Publication date Feb 6, 2025
- Micron Technology, Inc.
- Koichi Kawai
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH CONCURRENT PROGRAMMING
- Publication number 20250046387
- Publication date Feb 6, 2025
- Western Digital Technologies, Inc.
- Yichen Wang
- G11 - INFORMATION STORAGE
Information Patent Application
PREDETERMINED PATTERN PROGRAM OPERATIONS
- Publication number 20250046389
- Publication date Feb 6, 2025
- Micron Technology, Inc.
- Kitae Park
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE SUPPORTING WORD LINE HOLDING OPERATION AND OPERATING...
- Publication number 20250037776
- Publication date Jan 30, 2025
- SK HYNIX INC.
- Hyung Jin CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY, OPERATION METHODS THEREOF AND MEMORY SYSTEMS
- Publication number 20250037769
- Publication date Jan 30, 2025
- Yangtze Memory Technologies Co., Ltd.
- JiaLiang Deng
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE ERASE PULSE TO IMPROVE MEMORY CELL ENDURANCE AND ERASE TIM...
- Publication number 20250037772
- Publication date Jan 30, 2025
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE CAPABLE OF CHANGING PASS VOLTAGE, MEMORY SYSTEM, AND...
- Publication number 20250037777
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Hyojin Ahn
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM HAVING SEMICONDUCTOR MEMORY DEVICE THAT PERFORMS VERI...
- Publication number 20250037771
- Publication date Jan 30, 2025
- KIOXIA Corporation
- Masanobu SHIRAKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SEMICONDUCT...
- Publication number 20250037778
- Publication date Jan 30, 2025
- SK HYNIX INC.
- Hee Youl LEE
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING MEMORY DEVICES
- Publication number 20250029667
- Publication date Jan 23, 2025
- Macronix International Co., Ltd.
- Che-Ping CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
CORRECTIVE READ ON PARTIALLY PROGRAMMED BLOCKS
- Publication number 20250029663
- Publication date Jan 23, 2025
- Micron Technology, Inc.
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND PRE-CHARGE METHOD
- Publication number 20250029666
- Publication date Jan 23, 2025
- Macronix International Co., Ltd.
- Che-Ping CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE TEMPERATURE COMPENSATION FOR A MEMORY DEVICE
- Publication number 20250029639
- Publication date Jan 23, 2025
- Micron Technology, Inc.
- Vamsi Pavan Rayaprolu
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE PROGRAMMING DELAY SCHEME IN A MEMORY SUB-SYSTEM
- Publication number 20250029665
- Publication date Jan 23, 2025
- Micron Technology, Inc.
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING METHOD OF A MEMORY, MEMORY AND MEMORY SYSTEM
- Publication number 20250029660
- Publication date Jan 23, 2025
- Yangtze Memory Technologies Co., Ltd.
- Jianquan JIA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE
- Publication number 20250022517
- Publication date Jan 16, 2025
- SK HYNIX INC.
- Hee Youl LEE
- G11 - INFORMATION STORAGE
Information Patent Application
EARLY DISCHARGE SEQUENCES DURING READ RECOVERY TO ALLEVIATE LATENT...
- Publication number 20250022513
- Publication date Jan 16, 2025
- Micron Technology, Inc.
- Xiangyu Yang
- G11 - INFORMATION STORAGE

Determination of programming status

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor memory device with conductive layers separated betwee...

Imprint management for memory

Dynamic program caching

Data latch programming algorithm for multi-bit-per-cell memory devices

Method of detecting a not-open string (N/O string), converting targ...

Page buffer supporting different bit line forcing operations using...

Semiconductor memory device

Flash memory device and data recover read method thereof

Semiconductor memory device, and method operating based on status c...

Lifetime mixed level non-volatile memory system

Semiconductor storage device and voltage control method for semicon...

Cache processes with adaptive dynamic start voltage calculation for...

Semiconductor storage device and memory system

Memory device with leakage current verifying circuit for minimizing...

Memory device, memory system, and method of operating the same

Non-volatile memory device and programming method thereof

Methods and apparatus for NAND flash memory

Techniques for threshold voltage scans

Semiconductor storage device

Fast two-sided corrective read operation in a memory device

Storage device and read recovery method thereof

Memory system with verify operations of odd and even word lines

Semiconductor memory device

Dynamic gate steps for last-level programming to improve write perf...

Memory device and program operation thereof

Double program debug method for NAND memory using self-verification...

Storage system and operating method of storage controller

Data erasure verification for three-dimensional non-volatile memory

Memory device, method for programming memory device, program verifi...

MLC programming techniques in a memory device

Patents Applicationslast 30 patents

MEMORY SYSTEM

SMART VERIFY ALGORITHM FOR IMPROVING RELIABILITY FOR ULTRA HIGH-PER...

APPARATUS AND METHODS FOR ERASING FOR NON-VOLATILE MEMORY

STATE-DEPENDENT FAIL BIT COUNT CRITERIA FOR MEMORY APPARATUS PROGRA...

CONTROL METHODS, PARAMETER CALCULATION METHODS, MEMORY AND MEMORY S...

FIVE LEVEL CELL PROGRAM ALGORITHM WITH APPENDED BIT LEVEL ERASE FOR...

LIFETIME MIXED LEVEL NON-VOLATILE MEMORY SYSTEM

DYNAMIC TEMPERATURE COMPENSATION IN A MEMORY COMPONENT

SHALLOW ERASE FOR ERASE POOL MANAGEMENT

NON-VOLATILE MEMORY WITH HIGH PERFORMANCE READ

MEMORY DEVICE, MEMORY SYSTEM, AND METHOD OF OPERATING THE SAME

MEMORY CONFIGURED TO PERFORM A CHANNEL PRECHARGE OPERATION AND METH...

SIMULTANEOUS LOWER TAIL VERIFY WITH UPPER TAIL VERIFY

MEMORY DEVICES USING A DYNAMIC LATCH TO PROVIDE MULTIPLE BIAS VOLTAGES

NON-VOLATILE MEMORY WITH CONCURRENT PROGRAMMING

PREDETERMINED PATTERN PROGRAM OPERATIONS

MEMORY DEVICE SUPPORTING WORD LINE HOLDING OPERATION AND OPERATING...

MEMORY, OPERATION METHODS THEREOF AND MEMORY SYSTEMS

ADAPTIVE ERASE PULSE TO IMPROVE MEMORY CELL ENDURANCE AND ERASE TIM...

MEMORY DEVICE CAPABLE OF CHANGING PASS VOLTAGE, MEMORY SYSTEM, AND...

MEMORY SYSTEM HAVING SEMICONDUCTOR MEMORY DEVICE THAT PERFORMS VERI...

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SEMICONDUCT...

PROGRAMMING MEMORY DEVICES

CORRECTIVE READ ON PARTIALLY PROGRAMMED BLOCKS

MEMORY DEVICE AND PRE-CHARGE METHOD

ADAPTIVE TEMPERATURE COMPENSATION FOR A MEMORY DEVICE

ADAPTIVE PROGRAMMING DELAY SCHEME IN A MEMORY SUB-SYSTEM

PROGRAMMING METHOD OF A MEMORY, MEMORY AND MEMORY SYSTEM

MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE

EARLY DISCHARGE SEQUENCES DURING READ RECOVERY TO ALLEVIATE LATENT...