Diffusion into or out of AIIIBV compounds

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H01L21/2233

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/2233Diffusion into or out of AIIIBV compounds

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method for producing a semiconductor component comprising performin...
- Patent number 11,915,935
- Issue date Feb 27, 2024
- Osram Opto Semiconductors GmbH
- Andreas Biebersdorf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method for manufacturing the same, power circ...
- Patent number 11,894,452
- Issue date Feb 6, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having both enhancement mode group III-N hi...
- Patent number 11,594,627
- Issue date Feb 28, 2023
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method for manufacturing the same, power circ...
- Patent number 11,227,942
- Issue date Jan 18, 2022
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method for manufacturing same
- Patent number 11,152,499
- Issue date Oct 19, 2021
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Hideyuki Okita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having both enhancement mode group III-N hi...
- Patent number 11,101,378
- Issue date Aug 24, 2021
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V extension by high temperature plasma doping
- Patent number 11,018,225
- Issue date May 25, 2021
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with doped regions functioning as enhanced re...
- Patent number 10,971,613
- Issue date Apr 6, 2021
- NXP USA, INC.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 10,910,222
- Issue date Feb 2, 2021
- Mitsubishi Electric Corporation
- Eiji Nakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of vertical GaN-based semiconductor device and...
- Patent number 10,903,352
- Issue date Jan 26, 2021
- Fuji Electric Co., Ltd.
- Shinya Takashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-state device based on ion trapping
- Patent number 10,886,124
- Issue date Jan 5, 2021
- International Business Machines Corporation
- Ning Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices with doped regions functioning as enhanced re...
- Patent number 10,644,142
- Issue date May 5, 2020
- NXP USA, INC.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming light-receiving device
- Patent number 10,580,927
- Issue date Mar 3, 2020
- Sumitomo Electric Device Innovations, Inc.
- Shin-ichi Domoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, semiconductor device manufacturing method, po...
- Patent number 10,566,451
- Issue date Feb 18, 2020
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-state device based on ion trapping
- Patent number 10,559,463
- Issue date Feb 11, 2020
- International Business Machines Corporation
- Ning Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma shallow doping and wet removal of depth control cap
- Patent number 10,276,384
- Issue date Apr 30, 2019
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface treatment process performed on devices for TFT applications
- Patent number 10,224,432
- Issue date Mar 5, 2019
- Applied Materials, Inc.
- Rodney Shunleong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing same
- Patent number 10,121,663
- Issue date Nov 6, 2018
- Denso Corporation
- Yoshinori Tsuchiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned structures and methods for asymmetric GaN transistors...
- Patent number 9,923,087
- Issue date Mar 20, 2018
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar III-V field effect transistors with conformal metal gate...
- Patent number 9,818,847
- Issue date Nov 14, 2017
- Intel Corporation
- Gilbert Dewey
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Liquid immersion doping
- Patent number 9,805,931
- Issue date Oct 31, 2017
- Varian Semiconductor Equipment Associates, Inc.
- Frank Sinclair
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IIIA-VA group semiconductor single crystal substrate and method for...
- Patent number 9,691,617
- Issue date Jun 27, 2017
- Beijing Tongmei Xtal Technology Co., Ltd.
- Morris Young
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optical signal amplification
- Patent number 9,601,902
- Issue date Mar 21, 2017
- University of Central Florida Research Foundation, Inc.
- Aravinda Kar
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Self-aligned structures and methods for asymmetric GaN transistors...
- Patent number 9,590,069
- Issue date Mar 7, 2017
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface treatment of semiconductor substrate using free radical sta...
- Patent number 9,515,162
- Issue date Dec 6, 2016
- Infineon Technologies Austria AG
- Maria Reiner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling GaAsP/SiGe interfaces
- Patent number 9,490,330
- Issue date Nov 8, 2016
- Massachusetts Institute of Technology
- Eugene A. Fitzgerald
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for diffusion into semiconductor materials
- Patent number 9,087,951
- Issue date Jul 21, 2015
- Jinlin Ye
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Non-planar III-V field effect transistors with conformal metal gate...
- Patent number 8,890,264
- Issue date Nov 18, 2014
- Intel Corporation
- Gilbert Dewey
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Surface and gas phase doping of III-V semiconductors
- Patent number 8,697,467
- Issue date Apr 15, 2014
- The Regents of the University of California
- Ali Javey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode and manufacturing method thereof
- Patent number 8,334,542
- Issue date Dec 18, 2012
- Hon Hai Precision Industry Co., Ltd.
- Chih-Chen Lai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GAN DEVICE WITH N2 PRE-TREATMENT AND METHOD OF PERFORMING N2 PRE-TR...
- Publication number 20240282841
- Publication date Aug 22, 2024
- Powerchip Semiconductor Manufacturing Corporation
- Po-Hsien Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20230387203
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING
- Publication number 20230387282
- Publication date Nov 30, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Pravanshu Mohanta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMI-CONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230015133
- Publication date Jan 19, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, POWER CIRC...
- Publication number 20220102544
- Publication date Mar 31, 2022
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT COMPRISING PERFORMIN...
- Publication number 20210351037
- Publication date Nov 11, 2021
- Osram Opto Semiconductors GmbH
- Andreas BIEBERSDORF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HI...
- Publication number 20210351288
- Publication date Nov 11, 2021
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20200357642
- Publication date Nov 12, 2020
- Mitsubishi Electric Corporation
- Eiji NAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HI...
- Publication number 20200328296
- Publication date Oct 15, 2020
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...
- Publication number 20200227547
- Publication date Jul 16, 2020
- NXP USA, Inc.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20200105917
- Publication date Apr 2, 2020
- Panasonic Intellectual Property Management Co., Ltd.
- Hideyuki OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, PO...
- Publication number 20190280111
- Publication date Sep 12, 2019
- KABUSHIKI KAISHA TOSHIBA
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, POWER CIRC...
- Publication number 20190280112
- Publication date Sep 12, 2019
- KABUSHIKI KAISHA TOSHIBA
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...
- Publication number 20190198623
- Publication date Jun 27, 2019
- NXP USA, Inc.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STATE DEVICE BASED ON ION TRAPPING
- Publication number 20190164750
- Publication date May 30, 2019
- International Business Machines Corporation
- Ning Li
- G11 - INFORMATION STORAGE
Information Patent Application
MANUFACTURING METHOD OF VERTICAL GaN-BASED SEMICONDUCTOR DEVICE AND...
- Publication number 20190157448
- Publication date May 23, 2019
- Fuji Electric Co., Ltd.
- Shinya TAKASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE TREATMENT PROCESS PERFOMRED ON DEVICES FOR TFT APPLICATIONS
- Publication number 20180261698
- Publication date Sep 13, 2018
- Applied Materials, Inc.
- Rodney Shunleong LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OF FORMING LIGHT-RECEIVING DEVICE
- Publication number 20180254373
- Publication date Sep 6, 2018
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Shin-ichi Domoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP
- Publication number 20180218908
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP
- Publication number 20180218909
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP
- Publication number 20180218907
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V EXTENSION BY HIGH TEMPERATURE PLASMA DOPING
- Publication number 20170373149
- Publication date Dec 28, 2017
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20170162391
- Publication date Jun 8, 2017
- Denso Corporation
- Yoshinori TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE TREATMENT OF SEMICONDUCTOR SUBSTRATE USING FREE RADICAL STA...
- Publication number 20160260817
- Publication date Sep 8, 2016
- Infineon Technologies Austria AG
- Maria Reiner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS...
- Publication number 20150318375
- Publication date Nov 5, 2015
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IIIA-VA GROUP SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND METHOD FOR...
- Publication number 20150279678
- Publication date Oct 1, 2015
- BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.
- Morris Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING GAASP/SIGE INTERFACES
- Publication number 20150255549
- Publication date Sep 10, 2015
- Massachusetts Institute of Technology
- Eugene A. Fitzgerald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR III-V FIELD EFFECT TRANSISTORS WITH CONFORMAL METAL GATE...
- Publication number 20150072498
- Publication date Mar 12, 2015
- Intel Corporation
- Gilbert DEWEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR DIFFUSINON INTO SEMICONDUCTOR MATERIALS
- Publication number 20140093996
- Publication date Apr 3, 2014
- Jinlin Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS...
- Publication number 20140091308
- Publication date Apr 3, 2014
- Sansaptak DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS

Diffusion into or out of AIIIBV compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for producing a semiconductor component comprising performin...

Semiconductor device, method for manufacturing the same, power circ...

Semiconductor structure having both enhancement mode group III-N hi...

Semiconductor device, method for manufacturing the same, power circ...

Nitride semiconductor device and method for manufacturing same

Semiconductor structure having both enhancement mode group III-N hi...

III-V extension by high temperature plasma doping

Semiconductor devices with doped regions functioning as enhanced re...

Method for manufacturing semiconductor device

Manufacturing method of vertical GaN-based semiconductor device and...

Multi-state device based on ion trapping

Semiconductor devices with doped regions functioning as enhanced re...

Process of forming light-receiving device

Semiconductor device, semiconductor device manufacturing method, po...

Multi-state device based on ion trapping

Plasma shallow doping and wet removal of depth control cap

Surface treatment process performed on devices for TFT applications

Semiconductor device and method for producing same

Self-aligned structures and methods for asymmetric GaN transistors...

Non-planar III-V field effect transistors with conformal metal gate...

Liquid immersion doping

IIIA-VA group semiconductor single crystal substrate and method for...

Optical signal amplification

Self-aligned structures and methods for asymmetric GaN transistors...

Surface treatment of semiconductor substrate using free radical sta...

Controlling GaAsP/SiGe interfaces

Method and apparatus for diffusion into semiconductor materials

Non-planar III-V field effect transistors with conformal metal gate...

Surface and gas phase doping of III-V semiconductors

Light emitting diode and manufacturing method thereof

Patents Applicationslast 30 patents

GAN DEVICE WITH N2 PRE-TREATMENT AND METHOD OF PERFORMING N2 PRE-TR...

GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME

HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING

SEMI-CONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, POWER CIRC...

METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT COMPRISING PERFORMIN...

SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HI...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HI...

SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, PO...

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, POWER CIRC...

SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...

MULTI-STATE DEVICE BASED ON ION TRAPPING

MANUFACTURING METHOD OF VERTICAL GaN-BASED SEMICONDUCTOR DEVICE AND...

SURFACE TREATMENT PROCESS PERFOMRED ON DEVICES FOR TFT APPLICATIONS

PROCESS OF FORMING LIGHT-RECEIVING DEVICE

PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP

PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP

PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP

III-V EXTENSION BY HIGH TEMPERATURE PLASMA DOPING

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

SURFACE TREATMENT OF SEMICONDUCTOR SUBSTRATE USING FREE RADICAL STA...

SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS...

IIIA-VA GROUP SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND METHOD FOR...

CONTROLLING GAASP/SIGE INTERFACES

NON-PLANAR III-V FIELD EFFECT TRANSISTORS WITH CONFORMAL METAL GATE...

METHOD AND APPARATUS FOR DIFFUSINON INTO SEMICONDUCTOR MATERIALS

SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS...