Diffusion through a layer

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CPC
Y10S438/923

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S438/00Semiconductor device manufacturing: process

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Y10S438/923Diffusion through a layer

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Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating a landing plug in a semiconductor device
- Patent number 8,324,099
- Issue date Dec 4, 2012
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Integrated circuit arrangement with shockley diode or thyristor and...
- Patent number 8,129,292
- Issue date Mar 6, 2012
- Infineon Technologies AG
- Ulrich Glaser
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of fabricating landing plug with varied doping concentration...
- Patent number 8,110,501
- Issue date Feb 7, 2012
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Integrated circuit arrangement with Shockley diode or thyristor and...
- Patent number 7,888,701
- Issue date Feb 15, 2011
- Infineon Technologies AG
- Ulrich Glaser
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Integrated circuit arrangement with shockley diode or thyristor and...
- Patent number 7,679,103
- Issue date Mar 16, 2010
- Infineon Technologies AG
- Ulrich Glaser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor and method of fabricating the same
- Patent number 7,485,552
- Issue date Feb 3, 2009
- Samsung Mobile Display Co., Ltd.
- Byoung-Keon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device with improved refresh time
- Patent number 7,265,039
- Issue date Sep 4, 2007
- Hynix Semiconductor, Inc.
- Jae-Geun Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor with low angle grain boundaries in a channel l...
- Patent number 7,247,880
- Issue date Jul 24, 2007
- Samsung SDI Co., Ltd.
- Byoung-Keon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming halo regions in NMOS transistors
- Patent number 7,157,357
- Issue date Jan 2, 2007
- Dongbu Electronics Co., Ltd.
- Hak-Dong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor containing high purity tantalum
- Patent number 7,102,229
- Issue date Sep 5, 2006
- Honeywell International Inc.
- Harry Rosenberg
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Deep-trench capacitor with hemispherical grain silicon surface and...
- Patent number 7,009,238
- Issue date Mar 7, 2006
- ProMos Technologies Inc.
- Yueh-Chuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tantalum sputtering target and method of manufacture
- Patent number 6,958,257
- Issue date Oct 25, 2005
- Honeywell International Inc.
- Harry Rosenberg
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 6,955,958
- Issue date Oct 18, 2005
- DongbuAnam Semiconductor, Inc.
- Hag Dong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tantalum sputtering target and method of manufacture
- Patent number 6,955,938
- Issue date Oct 18, 2005
- Honeywell International Inc.
- Harry Rosenberg
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Metal region for reduction of capacitive coupling between signal lines
- Patent number 6,951,806
- Issue date Oct 4, 2005
- Sun Microsystems, Inc.
- Daniel G. Schweikert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Front side seal to prevent germanium outgassing
- Patent number 6,921,709
- Issue date Jul 26, 2005
- Advanced Micro Devices, Inc.
- Eric N. Paton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep-trench capacitor with hemispherical grain silicon surface and...
- Patent number 6,849,529
- Issue date Feb 1, 2005
- ProMos Technologies Inc.
- Yueh-Chuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion stop implants to suppress as punch-through in SiGe
- Patent number 6,809,016
- Issue date Oct 26, 2004
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial deposition layer as screening material for implants int...
- Patent number 6,797,596
- Issue date Sep 28, 2004
- Micron Technology, Inc.
- Fawad Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doping semiconductor layer, method of manufacturing thin...
- Patent number 6,794,277
- Issue date Sep 21, 2004
- Sony Corporation
- Akio Machida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication of semiconductor structures by ion implantation
- Patent number 6,794,239
- Issue date Sep 21, 2004
- Micron Technology, Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating buried strap out-diffusions of vertical tran...
- Patent number 6,762,099
- Issue date Jul 13, 2004
- Nanya Technology Corp.
- Hsu Yu-Sheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dopant pastes for the production of p, p+, and n, n&#x0002B...
- Patent number 6,695,903
- Issue date Feb 24, 2004
- Merck Patent GmbH
- Armin Kübelbeck
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
RF LDMOS on partial SOI substrate
- Patent number 6,667,516
- Issue date Dec 23, 2003
- Institute of Microelectronics
- Shuming Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving a doping profile for gas phase doping
- Patent number 6,645,839
- Issue date Nov 11, 2003
- Infineon Technologies AG
- Moritz Haupt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tantalum sputtering target and method of manufacture
- Patent number 6,566,161
- Issue date May 20, 2003
- Honeywell International Inc.
- Harry Rosenberg
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Doping of thin amorphous silicon work function control layers of MO...
- Patent number 6,518,113
- Issue date Feb 11, 2003
- Advanced Micro Devices, Inc.
- Matthew S. Buynoski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selective source diffusion
- Patent number 6,498,079
- Issue date Dec 24, 2002
- STMicroelectronics, Inc.
- Frank Randolph Bryant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of LDD-type MOSFET
- Patent number 6,489,209
- Issue date Dec 3, 2002
- NGB Corporation
- Noriyuki Shimoji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF LDMOS on partial SOI substrate
- Patent number 6,461,902
- Issue date Oct 8, 2002
- Institute of Microelectronics
- Shuming Xu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of Fabricating a Landing Plug in a Semiconductor Device
- Publication number 20120100714
- Publication date Apr 26, 2012
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating Landing Plug in Semiconductor Device
- Publication number 20100330801
- Publication date Dec 30, 2010
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT ARRANGEMENT WITH SHOCKLEY DIODE OR THYRISTOR AND...
- Publication number 20100120208
- Publication date May 13, 2010
- Infineon Technologies AG
- Ulrich Glaser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT ARRANGEMENT WITH SHOCKLEY DIODE OR THYRISTOR AND...
- Publication number 20100117116
- Publication date May 13, 2010
- Infineon Technologies AG
- Ulrich Glaser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit arrangement with shockley diode or thyristor and...
- Publication number 20070158750
- Publication date Jul 12, 2007
- Ulrich Glaser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin film transistor and method of fabricating the same
- Publication number 20060121651
- Publication date Jun 8, 2006
- Byoung-Keon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin film transistor and method of fabricating the same
- Publication number 20060006465
- Publication date Jan 12, 2006
- Byoung-Keon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tantalum sputtering target and method of manufacture
- Publication number 20050284259
- Publication date Dec 29, 2005
- Harry Rosenberg
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
Tantalum sputtering target and method of manufacture
- Publication number 20050284546
- Publication date Dec 29, 2005
- Harry Rosenberg
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
Methods of forming halo regions in NMOS transistors
- Publication number 20050142821
- Publication date Jun 30, 2005
- Hak-Dong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep-trench capacitor with hemispherical grain silicon surface and...
- Publication number 20050079681
- Publication date Apr 14, 2005
- ProMOS Technologies, Inc.
- Yueh-Chuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor device with improved refresh time
- Publication number 20040266156
- Publication date Dec 30, 2004
- Hynix Semiconductor Inc.
- Jae-Geun Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device
- Publication number 20040147071
- Publication date Jul 29, 2004
- Dongbu Electronics Co., Ltd.
- Hag Dong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep-trench capacitor with hemispherical grain silicon surface and...
- Publication number 20040079979
- Publication date Apr 29, 2004
- Yueh-Chuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sacrificial deposition layer as screening material for implants int...
- Publication number 20040043586
- Publication date Mar 4, 2004
- Fawad Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tantalum sputtering target and method of manufacture
- Publication number 20030082864
- Publication date May 1, 2003
- Harry Rosenberg
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
Semiconductor layer doping method, thin-film semiconductor device m...
- Publication number 20030077886
- Publication date Apr 24, 2003
- Akio Machida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for improving a doping profile for gas phase doping
- Publication number 20030013283
- Publication date Jan 16, 2003
- Moritz Haupt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF LDMOS on partial SOI substrate
- Publication number 20020197774
- Publication date Dec 26, 2002
- Institute of Microelectronics
- Shuming Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tantalum sputtering target and method of manufacture
- Publication number 20020132388
- Publication date Sep 19, 2002
- Harry Rosenberg
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Method of fabrication of semiconductor structures by ion implantation
- Publication number 20020016034
- Publication date Feb 7, 2002
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabrication of semiconductor structures by ion implantation
- Publication number 20020013039
- Publication date Jan 31, 2002
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device having memory cell tra...
- Publication number 20010051418
- Publication date Dec 13, 2001
- NEC Corporation
- Kazutaka Otsuki
- H01 - BASIC ELECTRIC ELEMENTS

Diffusion through a layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of fabricating a landing plug in a semiconductor device

Integrated circuit arrangement with shockley diode or thyristor and...

Method of fabricating landing plug with varied doping concentration...

Integrated circuit arrangement with Shockley diode or thyristor and...

Integrated circuit arrangement with shockley diode or thyristor and...

Thin film transistor and method of fabricating the same

Method for fabricating semiconductor device with improved refresh time

Thin film transistor with low angle grain boundaries in a channel l...

Methods of forming halo regions in NMOS transistors

Capacitor containing high purity tantalum

Deep-trench capacitor with hemispherical grain silicon surface and...

Tantalum sputtering target and method of manufacture

Method of manufacturing a semiconductor device

Tantalum sputtering target and method of manufacture

Metal region for reduction of capacitive coupling between signal lines

Front side seal to prevent germanium outgassing

Deep-trench capacitor with hemispherical grain silicon surface and...

Diffusion stop implants to suppress as punch-through in SiGe

Sacrificial deposition layer as screening material for implants int...

Method of doping semiconductor layer, method of manufacturing thin...

Method of fabrication of semiconductor structures by ion implantation

Method for fabricating buried strap out-diffusions of vertical tran...

Dopant pastes for the production of p, p&#x0002B;, and n, n&#x0002B...

RF LDMOS on partial SOI substrate

Method for improving a doping profile for gas phase doping

Tantalum sputtering target and method of manufacture

Doping of thin amorphous silicon work function control layers of MO...

Method for selective source diffusion

Manufacturing method of LDD-type MOSFET

RF LDMOS on partial SOI substrate

Patents Applicationslast 30 patents

Method of Fabricating a Landing Plug in a Semiconductor Device

Method of Fabricating Landing Plug in Semiconductor Device

INTEGRATED CIRCUIT ARRANGEMENT WITH SHOCKLEY DIODE OR THYRISTOR AND...

INTEGRATED CIRCUIT ARRANGEMENT WITH SHOCKLEY DIODE OR THYRISTOR AND...

Integrated circuit arrangement with shockley diode or thyristor and...

Thin film transistor and method of fabricating the same

Thin film transistor and method of fabricating the same

Tantalum sputtering target and method of manufacture

Tantalum sputtering target and method of manufacture

Methods of forming halo regions in NMOS transistors

Deep-trench capacitor with hemispherical grain silicon surface and...

Method for fabricating semiconductor device with improved refresh time

Method of manufacturing a semiconductor device

Deep-trench capacitor with hemispherical grain silicon surface and...

Sacrificial deposition layer as screening material for implants int...

Tantalum sputtering target and method of manufacture

Semiconductor layer doping method, thin-film semiconductor device m...

Method for improving a doping profile for gas phase doping

RF LDMOS on partial SOI substrate

Tantalum sputtering target and method of manufacture

Method of fabrication of semiconductor structures by ion implantation

Method of fabrication of semiconductor structures by ion implantation

Method of manufacturing semiconductor device having memory cell tra...

Dopant pastes for the production of p, p+, and n, n&#x0002B...