Semiconductor device manufacturing: process

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S438/00Semiconductor device manufacturing: process

Y10S438/90Bulk effect device making Y10S438/901Capacitive junction Y10S438/902Capping layer Y10S438/903Catalyst aided deposition Y10S438/904Charge carrier lifetime control Y10S438/905Cleaning of reaction chamber Y10S438/906Cleaning of wafer as interim step Y10S438/907Continuous processing Y10S438/908Utilizing cluster apparatus Y10S438/909Controlled atmosphere Y10S438/91Controlling charging state at semiconductor-insulator interface Y10S438/911Differential oxidation and etching Y10S438/912Displacing pn junction Y10S438/913Diverse treatments performed in unitary chamber Y10S438/914Doping Y10S438/915Amphoteric doping Y10S438/916Autodoping control or utilization Y10S438/917Deep level dopants Y10S438/918Special or nonstandard dopant Y10S438/919Compensation doping Y10S438/92Controlling diffusion profile by oxidation Y10S438/921Nonselective diffusion Y10S438/922Diffusion along grain boundaries Y10S438/923Diffusion through a layer Y10S438/924To facilitate selective etching Y10S438/925Fluid growth doping control Y10S438/926Dummy metallization Y10S438/927Electromigration resistant metallization Y10S438/928Front and rear surface processing Y10S438/929Eutectic semiconductor Y10S438/93Ternary or quaternary semiconductor comprised of elements from three different groups Y10S438/931Silicon carbide semiconductor Y10S438/932Boron nitride semiconductor Y10S438/933Germanium or silicon or Ge-Si on III-V Y10S438/934Sheet resistance Y10S438/935Gas flow control Y10S438/936Graded energy gap Y10S438/937Hillock prevention Y10S438/938Lattice strain control or utilization Y10S438/939Langmuir-blodgett film utilization Y10S438/94Laser ablative material removal Y10S438/941Loading effect mitigation Y10S438/942Masking Y10S438/943Movable Y10S438/944Shadow Y10S438/945Special Y10S438/946Step and repeat Y10S438/947Subphotolithographic processing Y10S438/948Radiation resist Y10S438/949Energy beam treating radiation resist on semiconductor Y10S438/95Multilayer mask including nonradiation sensitive layer Y10S438/951Lift-off Y10S438/952Utilizing antireflective layer Y10S438/953Making radiation resistant device Y10S438/954Making oxide-nitride-oxide device Y10S438/955Melt-back Y10S438/956Making multiple wavelength emissive device Y10S438/957Making metal-insulator-metal device Y10S438/958Passivation layer Y10S438/959Mechanical polishing of wafer Y10S438/96Porous semiconductor Y10S438/961Ion beam source and generation Y10S438/962Quantum dots and lines Y10S438/963Removing process residues from vertical substrate surfaces Y10S438/964Roughened surface Y10S438/965Shaped junction formation Y10S438/966Selective oxidation of ion-amorphousized layer Y10S438/967Semiconductor on specified insulator Y10S438/968Semiconductor-metal-semiconductor Y10S438/969Simultaneous formation of monocrystalline and polycrystalline regions Y10S438/97Specified etch stop material Y10S438/971Stoichiometric control of host substrate composition Y10S438/972Stored charge erasure Y10S438/973Substrate orientation Y10S438/974Substrate surface preparation Y10S438/975Substrate or mask aligning feature Y10S438/976Temporary protective layer Y10S438/977Thinning or removal of substrate Y10S438/978forming tapered edges on substrate or adjacent layers Y10S438/979Tunnel diodes Y10S438/98Utilizing process equivalents or options Y10S438/981Utilizing varying dielectric thickness Y10S438/982Varying orientation of devices in array Y10S438/983Zener diodes