Diffusion through a layer

Industry

CPC
Y10S148/035

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/035Diffusion through a layer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,763,953
- Issue date Jun 9, 1998
- Kabushiki Kaisha Toshiba
- Tadashi Iijima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of diffusing a metal through a silver electrode to form a pr...
- Patent number 5,529,954
- Issue date Jun 25, 1996
- Kabushiki Kaisha Toshiba
- Tadashi Iijima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming crystalline silicon devices on glass
- Patent number 5,399,231
- Issue date Mar 21, 1995
- Regents of the University of California
- Anthony M. McCarthy
- G02 - OPTICS
Information Patent Grant
Method of making buried contact module with multiple poly si layers
- Patent number 5,393,687
- Issue date Feb 28, 1995
- Taiwan Semiconductor Manufacturing Company
- Mong-Song Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase doping of semiconductor material in a cold-wall radiantly...
- Patent number 5,324,684
- Issue date Jun 28, 1994
- AG Processing Technologies, Inc.
- Ahmad Kermani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing SOI semiconductor device
- Patent number 5,308,776
- Issue date May 3, 1994
- Fujitsu Limited
- Hiroshi Gotou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device substrate and process for preparing the same
- Patent number 5,277,748
- Issue date Jan 11, 1994
- Canon Kabushiki Kaisha
- Kiyofumi Sakaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser
- Patent number 5,275,969
- Issue date Jan 4, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Shogo Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing gallium nitride semiconductor light-emittin...
- Patent number 5,272,108
- Issue date Dec 21, 1993
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Takahiro Kozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making ceramic/metal and ceramic/ceramic laminates by o...
- Patent number 5,259,885
- Issue date Nov 9, 1993
- American Superconductor Corporation
- Kenneth H. Sandhage
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Process for producing a low-loss optical waveguide in an epitaxial...
- Patent number 5,252,514
- Issue date Oct 12, 1993
- Siemens Aktiengesellschaft
- Bernd Schuppert
- G02 - OPTICS
Information Patent Grant
Method of diffusing P type impurity
- Patent number 5,225,370
- Issue date Jul 6, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Shogo Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device by maskless pn junct...
- Patent number 5,151,382
- Issue date Sep 29, 1992
- U.S. Philips Corp.
- Wilhelmus J. M. J. Josquin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device process using diffusant penetration and source...
- Patent number 5,141,895
- Issue date Aug 25, 1992
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Impurity diffusion method
- Patent number 5,122,478
- Issue date Jun 16, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Fumito Uesugi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device by doping with arsenic, of...
- Patent number 5,120,677
- Issue date Jun 9, 1992
- Oki Electric Industry Co., Ltd.
- Hidetoshi Wakamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor film
- Patent number 5,116,784
- Issue date May 26, 1992
- Tokyo Electron Limited
- Harunori Ushikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor device contact including transition...
- Patent number 5,086,016
- Issue date Feb 4, 1992
- International Business Machines Corporation
- Stephen B. Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with a copper wiring...
- Patent number 5,084,412
- Issue date Jan 28, 1992
- Kabushiki Kaisha Toshiba
- Yasushi Nakasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for device metallization by forming a contact plug and inter...
- Patent number 4,994,410
- Issue date Feb 19, 1991
- Motorola, Inc.
- Shih W. Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making cmos with shallow source and drain junctions
- Patent number 4,945,070
- Issue date Jul 31, 1990
- Harris Corporation
- Sheng T. Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double epitaxial method of fabricating semiconductor devices on bon...
- Patent number 4,897,362
- Issue date Jan 30, 1990
- Harris Corporation
- Jose A. Delgado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing GaAs films on Si or GaAs substrates using ale
- Patent number 4,876,218
- Issue date Oct 24, 1989
- Oy Nokia AB
- Markus Pessa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures utilizing semiconductor support means sele...
- Patent number 4,871,690
- Issue date Oct 3, 1989
- Xerox Corporation
- Nick Holonyak
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Single wafer moated process
- Patent number 4,794,092
- Issue date Dec 27, 1988
- Grumman Aerospace Corporation
- Allen L. Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a bipolar transistor with double diffused isolatio...
- Patent number 4,780,425
- Issue date Oct 25, 1988
- Sanyo Electric Co., Ltd.
- Teruo Tabata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled boron doping of silicon
- Patent number 4,676,847
- Issue date Jun 30, 1987
- American Telephone and Telegraph Company AT&T Bell Laboratories
- Albert M. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device comprising resistors...
- Patent number 4,643,777
- Issue date Feb 17, 1987
- Kabushiki Kaisha Toshiba
- Takeo Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for self-aligned buried layer, channel-stop, and isolation
- Patent number 4,574,469
- Issue date Mar 11, 1986
- Motorola, Inc.
- Sal Mastroianni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for doping from a polysilicon transfer layer
- Patent number 4,569,701
- Issue date Feb 11, 1986
- AT&T Bell Laboratories
- Kye H. Oh
- H01 - BASIC ELECTRIC ELEMENTS

Diffusion through a layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method of manufacturing the same

Method of diffusing a metal through a silver electrode to form a pr...

Method of forming crystalline silicon devices on glass

Method of making buried contact module with multiple poly si layers

Gas phase doping of semiconductor material in a cold-wall radiantly...

Method of manufacturing SOI semiconductor device

Semiconductor device substrate and process for preparing the same

Semiconductor laser

Method of manufacturing gallium nitride semiconductor light-emittin...

Process for making ceramic/metal and ceramic/ceramic laminates by o...

Process for producing a low-loss optical waveguide in an epitaxial...

Method of diffusing P type impurity

Method of manufacturing a semiconductor device by maskless pn junct...

Semiconductor device process using diffusant penetration and source...

Impurity diffusion method

Method for making a semiconductor device by doping with arsenic, of...

Method of forming semiconductor film

Method of making semiconductor device contact including transition...

Method of manufacturing a semiconductor device with a copper wiring...

Method for device metallization by forming a contact plug and inter...

Method of making cmos with shallow source and drain junctions

Double epitaxial method of fabricating semiconductor devices on bon...

Method of growing GaAs films on Si or GaAs substrates using ale

Semiconductor structures utilizing semiconductor support means sele...

Single wafer moated process

Method of making a bipolar transistor with double diffused isolatio...

Controlled boron doping of silicon

Method of manufacturing a semiconductor device comprising resistors...

Process for self-aligned buried layer, channel-stop, and isolation

Technique for doping from a polysilicon transfer layer