Doping agent source material

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CPC
Y10S252/95

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S252/00Compositions

Current Industry

Y10S252/95Doping agent source material

Industries

Patents Grantslast 30 patents

Information Patent Grant
Dopant pastes for the production of p, p+, and n, n&#x0002B...
- Patent number 6,695,903
- Issue date Feb 24, 2004
- Merck Patent GmbH
- Armin Kübelbeck
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method of feeding dopant for continuously-charged method and a dopa...
- Patent number 5,866,094
- Issue date Feb 2, 1999
- Komatsu Electronic Metals Co., Ltd.
- Keishi Niikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of feeding a dopant in a continuously charging method
- Patent number 5,700,321
- Issue date Dec 23, 1997
- Komatsu Electronic Metals Co., Ltd.
- Keishi Niikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low temperature P.sub.2 O.sub.5 oxide diffusion source
- Patent number 5,656,541
- Issue date Aug 12, 1997
- Techneglas, Inc.
- James E. Rapp
- C30 - CRYSTAL GROWTH
Information Patent Grant
Supersaturated rare earth doped semiconductor layers by chemical va...
- Patent number 5,646,425
- Issue date Jul 8, 1997
- International Business Machines Corporation
- David Bruce Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High temperature phosphorous oxide diffusion source
- Patent number 5,629,234
- Issue date May 13, 1997
- Techneglas, Inc.
- Gary R. Pickrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Supersaturated rare earth doped semiconductor layers formed by chem...
- Patent number 5,534,079
- Issue date Jul 9, 1996
- International Business Machines Corporation
- David B. Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making alkyl arsine compounds
- Patent number 5,415,129
- Issue date May 16, 1995
- Cytec Technology Corp.
- C. Joseph Calbick
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Low temperature P.sub.2 O.sub.5 oxide diffusion source
- Patent number 5,350,461
- Issue date Sep 27, 1994
- Techneglas, Inc.
- Gary R. Pickrell
- C30 - CRYSTAL GROWTH
Information Patent Grant
High temperature phosphorus oxide diffusion source
- Patent number 5,350,460
- Issue date Sep 27, 1994
- Techneglas, Inc.
- Gary R. Pickrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making supersaturated rare earth doped semiconductor laye...
- Patent number 5,322,813
- Issue date Jun 21, 1994
- International Business Machines Corporation
- David B. Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature process for producing antimony-containing semicondu...
- Patent number 5,275,966
- Issue date Jan 4, 1994
- The United States of America as represented by the Secretary of the Navy
- Robert W. Gedridge
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for making alkyl arsine compounds
- Patent number 5,274,149
- Issue date Dec 28, 1993
- American Cyanamid Company
- C. Joseph Calbick
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Arylmethylols, their preparation and their use
- Patent number 5,182,348
- Issue date Jan 26, 1993
- Wacker-Chemie GmbH
- Hermann Braeunling
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Use of phosphine and arsine compounds in chemical vapor deposition...
- Patent number 5,120,676
- Issue date Jun 9, 1992
- CVD Incorporated
- Andreas A. Melas
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making diamond N-type semiconductor diamond p-n junction...
- Patent number 5,112,775
- Issue date May 12, 1992
- The Tokai University Juridical Foundation
- Masamori Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ doped silicon using tertiary butyl phosphine
- Patent number 5,096,856
- Issue date Mar 17, 1992
- Texas Instruments Incorporated
- Dean W. Freeman
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Dopant film and methods of diffusing impurity into and manufacturin...
- Patent number 5,073,517
- Issue date Dec 17, 1991
- Kabushiki Kaisha Toshiba
- Masaburo Iwabuchi
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Semi-insulating cobalt doped indium phosphide grown by MOCVD
- Patent number 5,045,496
- Issue date Sep 3, 1991
- Rockwell International Corporation
- Kenneth L. Hess
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dopant film and methods of diffusing impurity into and manufacturin...
- Patent number 5,024,867
- Issue date Jun 18, 1991
- Kabushiki Kaisha Toshiba
- Masaburo Iwabuchi
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Chemical vapor deposition and chemicals with diarsines and polyarsines
- Patent number 4,999,223
- Issue date Mar 12, 1991
- CVD Incorporated
- Ravi K. Kanjolia
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Dopant of arsenic, method for the preparation thereof and method fo...
- Patent number 4,929,572
- Issue date May 29, 1990
- Furukawa Co., Ltd.
- Shigeaki Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of depositing arsine, antimony and phosphine substitutes
- Patent number 4,904,616
- Issue date Feb 27, 1990
- Air Products and Chemicals, Inc.
- David A. Bohling
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for doping silicon wafers using Al.sub.2 O.sub.3 /P.sub.2 O....
- Patent number 4,891,331
- Issue date Jan 2, 1990
- OI-NEG TV Products, Inc.
- James E. Rapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Zinc diffusion in the presence of cadmium into indium phosphide
- Patent number 4,889,830
- Issue date Dec 26, 1989
- Northern Telecom Limited
- Anthony J. Springthorpe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid diffusion source of GD oxide/P205 compound and method of maki...
- Patent number 4,846,902
- Issue date Jul 11, 1989
- Owens-Illinois Television Products Inc.
- Gary R. Pickrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phosphorous planar dopant source for low temperature applications
- Patent number 4,800,175
- Issue date Jan 24, 1989
- Owens-Illinois Television Products Inc.
- James E. Rapp
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Arsenate dopant sources and method of making the sources
- Patent number 4,798,764
- Issue date Jan 17, 1989
- Stemcor Corporation
- Richard E. Tressler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor dopant source
- Patent number 4,749,615
- Issue date Jun 7, 1988
- Stemcor Corporation
- Alan M. Bonny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Boron nitride dopant source for diffusion doping
- Patent number 4,734,386
- Issue date Mar 29, 1988
- Shin-Etsu Chemical Company, Ltd.
- Yoshihiro Kubota
- H01 - BASIC ELECTRIC ELEMENTS

Doping agent source material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Dopant pastes for the production of p, p&#x0002B;, and n, n&#x0002B...

Method of feeding dopant for continuously-charged method and a dopa...

Method of feeding a dopant in a continuously charging method

Low temperature P.sub.2 O.sub.5 oxide diffusion source

Supersaturated rare earth doped semiconductor layers by chemical va...

High temperature phosphorous oxide diffusion source

Supersaturated rare earth doped semiconductor layers formed by chem...

Process for making alkyl arsine compounds

Low temperature P.sub.2 O.sub.5 oxide diffusion source

High temperature phosphorus oxide diffusion source

Method of making supersaturated rare earth doped semiconductor laye...

Low temperature process for producing antimony-containing semicondu...

Process for making alkyl arsine compounds

Arylmethylols, their preparation and their use

Use of phosphine and arsine compounds in chemical vapor deposition...

Method of making diamond N-type semiconductor diamond p-n junction...

In-situ doped silicon using tertiary butyl phosphine

Dopant film and methods of diffusing impurity into and manufacturin...

Semi-insulating cobalt doped indium phosphide grown by MOCVD

Dopant film and methods of diffusing impurity into and manufacturin...

Chemical vapor deposition and chemicals with diarsines and polyarsines

Dopant of arsenic, method for the preparation thereof and method fo...

Method of depositing arsine, antimony and phosphine substitutes

Method for doping silicon wafers using Al.sub.2 O.sub.3 /P.sub.2 O....

Zinc diffusion in the presence of cadmium into indium phosphide

Solid diffusion source of GD oxide/P205 compound and method of maki...

Phosphorous planar dopant source for low temperature applications

Arsenate dopant sources and method of making the sources

Semiconductor dopant source

Boron nitride dopant source for diffusion doping

Dopant pastes for the production of p, p+, and n, n&#x0002B...