Applied Physics Letter 43 (10), Nov. 1983, p. 943 H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann "1.54-.mu.m luminescence of erbium-implanted III-V semiconductors and silicon." |
Applied Physics Letter 46 (4), Feb. 1985 p. 381 H. Ennen, G. Pomrenke, A. Axmann, K. Eisele, W. Haydl, and J. Schneider "1.54-.mu.m electroluminesence of erbium-doped silicon grown by molecular beam epitaxy." |
Applied Physics Letter 50 (2), Jan. 1987 p. 113 B.S. Meyerson, F. K. LeGoues, T. N. Nguyen, and D. L. Harame "Nonequilibrium boron doping effects in low-temperature epitaxial silicon films." |
Japenese Journal of Applied Physics vol. 29, No. 4, Apr. 1990, pp. L524-L526 P. N. Favennec, H. L'Haridon, D. Moutonnet, M. Salvi and M. Gauneau "Optical Activation of Er.sup.3 + Implanted in Silicon by Oxygen Impurities." |
Applied Physics letter 58 (24), Jun. 1991 p. 2797 D. J. Eaglesham. J. Michel, E. A. Fitzgerald, D. C. Jacobson, J. M. Poate, J. L. Benton, A. Polman, Y.-H. Xie, and L. C. Kimerling "Microstructure of erbium-implanted Si." |
J. Applied Physics 70 (5), Sep. 1991 p. 2667 J. L. Benton, J. Michel, L. C. Kimerling, D. C. Jacobson, Y.-H. Xie, D. J. Eaglesham, E. A. Fitzgerald, and J. M. Poate "The electrical and defect properties of erbium-implanted silicon." |
J. Applied Physics 70 (5), Sep. 1991 p. 2672 J. Michel, J. L. Benton, R. F. Ferrante, D. C. Jacobson, D. J. Eaglesham, E. A. Fitzgerald, Y.-H. Xie, J. M. Poate, and L. C. Kimerling "Impurity enhancement of the 1.54-.mu.m Er.sup.3 + luminescence in silicon." |
Journal of Crystal Growth 104 (1990) pp. 815-819 J. Weber, M. Moser, A. Stapor, F. Scholz, G. Bohnert, A. Hangleiter, A. Hammel, D. Wiedmann, and J. Weidlein "Movpe Grown InP:Er Layers Using Er(MeCp).sub.3 and Er(IpCp).sub.3 ." |
Journal of Crystal Growth 93 (1988) pp. 583-588 K. Uwai, H. Nakagome, and K. Takahei "Growth of Erbium-Doped GaAs and InP by Metalorganic Chemical Vapor Deposition Using Er(CH.sub.3 C.sub.5 H.sub.4).sub.3 and Er(C.sub.5 H.sub.5).sub.3." |