doping of the active layer

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H01S5/3086

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HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

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H01S5/3086doping of the active layer

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 12,218,204
- Issue date Feb 4, 2025
- SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
- Ha Jong Bong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light extraction from optoelectronic device
- Patent number 12,095,000
- Issue date Sep 17, 2024
- Sensor Electronic Technology, Inc.
- Michael Shur
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Surface emitting laser device, light-emitting device including the...
- Patent number 12,051,886
- Issue date Jul 30, 2024
- SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
- Keun Uk Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum cascade laser device
- Patent number 12,046,875
- Issue date Jul 23, 2024
- Hamamatsu Photonics K.K.
- Kazuue Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device
- Patent number 11,764,546
- Issue date Sep 19, 2023
- Denso Corporation
- Yuki Kamata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing ER- or ER/O-doped silicon-based luminescent ma...
- Patent number 11,367,998
- Issue date Jun 21, 2022
- Shanghai Jiao Tong University
- Yaping Dan
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Germanium-on-silicon laser in CMOS technology
- Patent number 11,329,455
- Issue date May 10, 2022
- STMicroelectronics (Crolles 2) SAS
- Mathias Prost
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser array, semiconductor laser element, semiconduct...
- Patent number 11,322,912
- Issue date May 3, 2022
- Furukawa Electric Co., Ltd.
- Akira Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based VCSEL chip based on porous DBR and manufacturing method o...
- Patent number 11,258,231
- Issue date Feb 22, 2022
- Institute of Semiconductors, Chinese Academy of Sciences
- Lixia Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modulation doped semiconductor laser and manufacturing method therefor
- Patent number 11,196,232
- Issue date Dec 7, 2021
- Lumentum Japan, Inc.
- Takayuki Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing nitride crystal and nitride crystal
- Patent number 11,162,190
- Issue date Nov 2, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka Mikawa
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Reducing or eliminating nanopipe defects in III-nitride structures
- Patent number 11,152,539
- Issue date Oct 19, 2021
- Lumileds LLC
- Isaac Harshman Wildeson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integrated semiconductor random laser
- Patent number 10,923,881
- Issue date Feb 16, 2021
- Taiyuan University Of Technology
- Mingjiang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light extraction from optoelectronic device
- Patent number 10,790,410
- Issue date Sep 29, 2020
- Sensor Electronic Technology, Inc.
- Michael Shur
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Optoelectronic device with a nanowire semiconductor layer
- Patent number 10,693,035
- Issue date Jun 23, 2020
- Sensor Electronic Technology, Inc.
- Michael Shur
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Germanium-on-silicon laser in CMOS technology
- Patent number 10,686,297
- Issue date Jun 16, 2020
- STMicroelectronics (Crolles 2) SAS
- Mathias Prost
- G02 - OPTICS
Information Patent Grant
Semiconductor laser, electronic apparatus, and method of driving se...
- Patent number 10,680,406
- Issue date Jun 9, 2020
- Sony Corporation
- Tomoki Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for high-concentration doping of germanium with phosphorous
- Patent number 10,680,413
- Issue date Jun 9, 2020
- Massachusetts Institute of Technology
- Jonathan T. Bessette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing or eliminating nanopipe defects in III-nitride structures
- Patent number 10,651,340
- Issue date May 12, 2020
- Lumileds LLC
- Patrick Nolan Grillot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing nitride crystal and nitride crystal
- Patent number 10,526,726
- Issue date Jan 7, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Laser device and methods for manufacturing the same
- Patent number 10,396,528
- Issue date Aug 27, 2019
- Electronics and Telecommunications Research Institute
- In Gyoo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing or eliminating nanopipe defects in III-nitride structures
- Patent number 10,193,015
- Issue date Jan 29, 2019
- Lumileds LLC
- Patrick Nolan Grillot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron beam pumped vertical cavity surface emitting laser
- Patent number 10,153,616
- Issue date Dec 11, 2018
- Palo Alto Research Center Incorporated
- Thomas Wunderer
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Integrated circuit implementing a VCSEL array or VCSEL device
- Patent number 10,116,115
- Issue date Oct 30, 2018
- Geoff W. Taylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,109,982
- Issue date Oct 23, 2018
- Furukawa Electric Co., Ltd.
- Hidehiro Taniguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal emission source and two-dimensional photonic crystal for us...
- Patent number 9,972,970
- Issue date May 15, 2018
- Japan Science and Technology Agency
- Susumu Noda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,960,572
- Issue date May 1, 2018
- Furukawa Electric Co., Ltd.
- Masayuki Iwami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device
- Patent number 9,741,896
- Issue date Aug 22, 2017
- PlayNitride Inc.
- Yen-Lin Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron beam pumped vertical cavity surface emitting laser
- Patent number 9,705,288
- Issue date Jul 11, 2017
- Palo Alto Research Center Incorporated
- Thomas Wunderer
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High-concentration active doping in semiconductors and semiconducto...
- Patent number 9,692,209
- Issue date Jun 27, 2017
- Massachusetts Institute of Technology
- Jonathan T. Bessette
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Light Extraction from Optoelectronic Device
- Publication number 20240379901
- Publication date Nov 14, 2024
- SENSOR ELECTRONIC TECHNOLOGY, INC.
- Michael Shur
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RARE-EARTH-DOPED SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE...
- Publication number 20240339568
- Publication date Oct 10, 2024
- OSAKA UNIVERSITY
- Yasufumi FUJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LASER DEVICE
- Publication number 20240291241
- Publication date Aug 29, 2024
- THE UNIVERSITY OF TOKYO
- Yasuhiko Arakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM-ON-SILICON LASER IN CMOS TECHNOLOGY
- Publication number 20220231483
- Publication date Jul 21, 2022
- STMicroelectronics (Crolles 2) SAS
- Mathias PROST
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20220033992
- Publication date Feb 3, 2022
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
QUANTUM CASCADE LASER DEVICE
- Publication number 20210351570
- Publication date Nov 11, 2021
- HAMAMATSU PHOTONICS K. K.
- Kazuue FUJITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE EMITTING LASER DEVICE, LIGHT-EMITTING DEVICE INCLUDING THE...
- Publication number 20210273413
- Publication date Sep 2, 2021
- SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
- Keun Uk PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM-BASED LASER DIODE
- Publication number 20210249845
- Publication date Aug 12, 2021
- International Business Machines Corporation
- Zuoguang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING ER- OR ER/O-DOPED SILICON-BASED LUMINESCENT MA...
- Publication number 20200366063
- Publication date Nov 19, 2020
- SHANGHAI JIAO TONG UNIVERSITY
- Yaping Dan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200321440
- Publication date Oct 8, 2020
- LG Innotek Co., Ltd.
- Ha Jong BONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM-ON-SILICON LASER IN CMOS TECHNOLOGY
- Publication number 20200266609
- Publication date Aug 20, 2020
- STMicroelectronics (Crolles 2) SAS
- Mathias PROST
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing Or Eliminating Nanopipe Defects In III-Nitride Structures
- Publication number 20200235263
- Publication date Jul 23, 2020
- Lumileds LLC
- Isaac Wildeson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-based VCSEL Chip Based on Porous DBR and Manufacturing Method o...
- Publication number 20200185882
- Publication date Jun 11, 2020
- Institute of Semiconductors, Chinese Academy of Sciences
- Lixia Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20200109489
- Publication date Apr 9, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHT EMITTING DEVICE AND PROJECTOR
- Publication number 20200106244
- Publication date Apr 2, 2020
- SEIKO EPSON CORPORATION
- Takafumi NODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LASER, ELECTRONIC APPARATUS, AND METHOD OF DRIVING SE...
- Publication number 20190173262
- Publication date Jun 6, 2019
- SONY CORPORATION
- TOMOKI ONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING OR ELIMINATING NANOPIPE DEFECTS IN III-NITRIDE STRUCTURES
- Publication number 20190081207
- Publication date Mar 14, 2019
- Lumileds LLC
- Patrick Nolan Grillot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL CAVITY SURFACE EMITTING LASER, METHOD FOR FABRICATING VERT...
- Publication number 20190044306
- Publication date Feb 7, 2019
- Sumitomo Electric Industries, Ltd.
- Toshiyuki TANAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Implementing a VCSEL Array or VCSEL Device
- Publication number 20180241173
- Publication date Aug 23, 2018
- INTOP Corp.
- Geoff W. Taylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for High-Concentration Doping of Germanium with Phosphorous
- Publication number 20180198256
- Publication date Jul 12, 2018
- Massachusetts Institute of Technology
- Jonathan T. Bessette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM-ON-SILICON LASER IN CMOS TECHNOLOGY
- Publication number 20180048123
- Publication date Feb 15, 2018
- STMicroelectronics (Crolles 2) SAS
- Mathias Prost
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRON BEAM PUMPED VERTICAL CAVITY SURFACE EMITTING LASER
- Publication number 20170317474
- Publication date Nov 2, 2017
- Palo Alto Research Center Incorporated
- Thomas Wunderer
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING DEVICE
- Publication number 20170133552
- Publication date May 11, 2017
- PlayNitride Inc.
- Yen-Lin Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20170051434
- Publication date Feb 23, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160351392
- Publication date Dec 1, 2016
- FURUKAWA ELECTRIC CO., LTD.
- Masayuki IWAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LASER DEVICE
- Publication number 20160352075
- Publication date Dec 1, 2016
- FURUKAWA ELECTRIC CO., LTD.
- Masayuki IWAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING OR ELIMINATING NANOPIPE DEFECTS IN III-NITRIDE STRUCTURES
- Publication number 20160308092
- Publication date Oct 20, 2016
- Koninklijke Philips N.V.
- Patrick Nolan Grillot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LASER ARRAY, SEMICONDUCTOR LASER ELEMENT, SEMICONDUCT...
- Publication number 20160301193
- Publication date Oct 13, 2016
- FURUKAWA ELECTRIC CO., LTD.
- Akira ITOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC INTEGRATED PHOTONICS WITH LATERAL BIPOLAR AND BICMOS
- Publication number 20160276807
- Publication date Sep 22, 2016
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Concentration Active Doping in Semiconductors and Semiconducto...
- Publication number 20140254620
- Publication date Sep 11, 2014
- Massachusetts Institute of Technology
- Jonathan T. Bessette
- H01 - BASIC ELECTRIC ELEMENTS

doping of the active layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Light extraction from optoelectronic device

Surface emitting laser device, light-emitting device including the...

Quantum cascade laser device

Semiconductor laser device

Method for preparing ER- or ER/O-doped silicon-based luminescent ma...

Germanium-on-silicon laser in CMOS technology

Semiconductor laser array, semiconductor laser element, semiconduct...

GaN-based VCSEL chip based on porous DBR and manufacturing method o...

Modulation doped semiconductor laser and manufacturing method therefor

Method for producing nitride crystal and nitride crystal

Reducing or eliminating nanopipe defects in III-nitride structures

Monolithic integrated semiconductor random laser

Light extraction from optoelectronic device

Optoelectronic device with a nanowire semiconductor layer

Germanium-on-silicon laser in CMOS technology

Semiconductor laser, electronic apparatus, and method of driving se...

Method for high-concentration doping of germanium with phosphorous

Reducing or eliminating nanopipe defects in III-nitride structures

Method for producing nitride crystal and nitride crystal

Laser device and methods for manufacturing the same

Reducing or eliminating nanopipe defects in III-nitride structures

Electron beam pumped vertical cavity surface emitting laser

Integrated circuit implementing a VCSEL array or VCSEL device

Semiconductor device

Thermal emission source and two-dimensional photonic crystal for us...

Semiconductor device

Semiconductor light-emitting device

Electron beam pumped vertical cavity surface emitting laser

High-concentration active doping in semiconductors and semiconducto...

Patents Applicationslast 30 patents

Light Extraction from Optoelectronic Device

RARE-EARTH-DOPED SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE...

SEMICONDUCTOR LASER DEVICE

GERMANIUM-ON-SILICON LASER IN CMOS TECHNOLOGY

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

QUANTUM CASCADE LASER DEVICE

SURFACE EMITTING LASER DEVICE, LIGHT-EMITTING DEVICE INCLUDING THE...

GERMANIUM-BASED LASER DIODE

METHOD FOR PREPARING ER- OR ER/O-DOPED SILICON-BASED LUMINESCENT MA...

SEMICONDUCTOR DEVICE

GERMANIUM-ON-SILICON LASER IN CMOS TECHNOLOGY

Reducing Or Eliminating Nanopipe Defects In III-Nitride Structures

GaN-based VCSEL Chip Based on Porous DBR and Manufacturing Method o...

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

LIGHT EMITTING DEVICE AND PROJECTOR

SEMICONDUCTOR LASER, ELECTRONIC APPARATUS, AND METHOD OF DRIVING SE...

REDUCING OR ELIMINATING NANOPIPE DEFECTS IN III-NITRIDE STRUCTURES

VERTICAL CAVITY SURFACE EMITTING LASER, METHOD FOR FABRICATING VERT...

Integrated Circuit Implementing a VCSEL Array or VCSEL Device

Method for High-Concentration Doping of Germanium with Phosphorous

GERMANIUM-ON-SILICON LASER IN CMOS TECHNOLOGY

ELECTRON BEAM PUMPED VERTICAL CAVITY SURFACE EMITTING LASER

SEMICONDUCTOR LIGHT-EMITTING DEVICE

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

SEMICONDUCTOR DEVICE

SEMICONDUCTOR LASER DEVICE

REDUCING OR ELIMINATING NANOPIPE DEFECTS IN III-NITRIDE STRUCTURES

SEMICONDUCTOR LASER ARRAY, SEMICONDUCTOR LASER ELEMENT, SEMICONDUCT...

MONOLITHIC INTEGRATED PHOTONICS WITH LATERAL BIPOLAR AND BICMOS

High-Concentration Active Doping in Semiconductors and Semiconducto...