Edge-defined film-fed crystal-growth using dies or slits

Industry

CPC
C30B15/34

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B15/00Single-crystal growth by pulling from a melt

Current Industry

C30B15/34Edge-defined film-fed crystal-growth using dies or slits

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing polycrystalline silicon ingot using a cruci...
- Patent number 11,913,133
- Issue date Feb 27, 2024
- Lintech Corporation
- Ho Jung You
- C30 - CRYSTAL GROWTH
Information Patent Grant
System for growing crystal sheets
- Patent number 11,761,119
- Issue date Sep 19, 2023
- II-VI DELAWARE, INC.
- Nathan Stoddard
- C30 - CRYSTAL GROWTH
Information Patent Grant
Die for EFG-based single crystal growth, EFG-based single crystal g...
- Patent number 11,492,724
- Issue date Nov 8, 2022
- TDK Corporation
- Katsumi Kawasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device and method for producing tubular single crystal
- Patent number 11,326,273
- Issue date May 10, 2022
- Kyocera Corporation
- Ichiro Sakano
- C30 - CRYSTAL GROWTH
Information Patent Grant
System for growing crystal sheets
- Patent number 11,274,379
- Issue date Mar 15, 2022
- II-VI DELAWARE, INC.
- Nathan Stoddard
- C30 - CRYSTAL GROWTH
Information Patent Grant
Sapphire ribbon and apparatus for manufacturing single crystal ribbons
- Patent number 11,248,311
- Issue date Feb 15, 2022
- Kyocera Corporation
- Akeo Fukui
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing β phase of gallium oxide ([β]-Ga2O3) single crys...
- Patent number 11,028,501
- Issue date Jun 8, 2021
- Forschungsverbund Berlin e.V.
- Zbigniew Galazka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Transparent ceramic with complex geometry
- Patent number 10,875,812
- Issue date Dec 29, 2020
- Saint-Gobain Ceramics & Plastics, Inc.
- Drew T. Haven
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for controlling heat flow within a silicon melt using a heat...
- Patent number 10,801,125
- Issue date Oct 13, 2020
- Peter L. Kellerman
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing β-GA2O3-based single crystal
- Patent number 10,526,721
- Issue date Jan 7, 2020
- KOHA CO., LTD.
- Shinya Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor element, method for manufacturing same, semiconductor...
- Patent number 10,230,007
- Issue date Mar 12, 2019
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
High voltage withstand Ga2O3-based single crystal schottky barrier...
- Patent number 10,199,512
- Issue date Feb 5, 2019
- Tamura Corporation
- Kohei Sasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor wafer and method
- Patent number 10,199,216
- Issue date Feb 5, 2019
- Infineon Technologies Austria AG
- Clemens Ostermaier
- C30 - CRYSTAL GROWTH
Information Patent Grant
β-Ga2O3 single-crystal substrate
- Patent number 10,196,756
- Issue date Feb 5, 2019
- Tamura Corporation
- Shinya Watanabe
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of making a sapphire component including machining a sapphir...
- Patent number 9,963,800
- Issue date May 8, 2018
- Saint-Gobain Ceramics & Plastics, Inc.
- John Walter Locher
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heat exchangers in sapphire processing
- Patent number 9,945,613
- Issue date Apr 17, 2018
- Apple Inc.
- Christopher D. Prest
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming a single crystal sheet using a die having a therm...
- Patent number 9,926,645
- Issue date Mar 27, 2018
- Saint-Gobain Ceramics & Plastics, Inc.
- John Walter Locher
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing B-Ga2O3-based single crystal
- Patent number 9,926,646
- Issue date Mar 27, 2018
- Tamura Corporation
- Shinya Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing beta-Ga2O3-based single crystal, and beta-Ga2O3-...
- Patent number 9,915,009
- Issue date Mar 13, 2018
- Tamura Corporation
- Kimiyoshi Koshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for cultivating β-Ga2O3-based single crystal, and β-Ga2O3-ba...
- Patent number 9,915,010
- Issue date Mar 13, 2018
- Tamura Corporation
- Kimiyoshi Koshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing β-Ga2O3-based single crystal
- Patent number 9,903,045
- Issue date Feb 27, 2018
- Tamura Corporation
- Shinya Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Plane orientation of crystalline structures
- Patent number 9,777,398
- Issue date Oct 3, 2017
- Apple Inc.
- Benjamin J. Pope
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Continuous sapphire growth
- Patent number 9,777,397
- Issue date Oct 3, 2017
- Apple Inc.
- Dale N. Memering
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate for epitaxial growth, and crystal laminate structure
- Patent number 9,685,515
- Issue date Jun 20, 2017
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Sheet production apparatus for removing a crystalline sheet from th...
- Patent number 9,677,193
- Issue date Jun 13, 2017
- Varian Semiconductor Equipment Associates, Inc.
- Peter L. Kellerman
- C30 - CRYSTAL GROWTH
Information Patent Grant
Sapphire sheets and apparatus and method for producing sapphire she...
- Patent number 9,551,089
- Issue date Jan 24, 2017
- Saint-Gobain Ceramics & Plastics, Inc.
- Marc Ouellette
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
β-Ga2O3-based single crystal substrate
- Patent number 9,349,915
- Issue date May 24, 2016
- Tamura Corporation
- Kimiyoshi Koshi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for removing nonmetallic impurities from metallurgical silicon
- Patent number 9,327,987
- Issue date May 3, 2016
- SPAWNT Private S.A.R.L.
- Seyed-Javad Mohsseni-Ala
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Substrate for epitaxial growth, and crystal laminate structure
- Patent number 9,142,623
- Issue date Sep 22, 2015
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light emitting element and method of making same
- Patent number 9,117,974
- Issue date Aug 25, 2015
- Koha Co., Ltd.
- Noboru Ichinose
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
POWDER FOR GROWING GALLIUM OXIDE SINGLE CRYSTAL AND METHOD OF MANUF...
- Publication number 20240158254
- Publication date May 16, 2024
- Korea Institute of Ceramic Engineering & Technology
- Si Young BAE
- C01 - INORGANIC CHEMISTRY
Information Patent Application
QUALITY PREDICTION METHOD, PREPARATION METHOD AND SYSTEM OF HIGH RE...
- Publication number 20230160098
- Publication date May 25, 2023
- HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- Hongji QI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING A MONOCRYSTALLINE SAPPHIRE SEED AS WELL AS...
- Publication number 20230133632
- Publication date May 4, 2023
- COMADUR S.A.
- Didier COCHET-MUCHY
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON INGOT USING A CRUCI...
- Publication number 20230059953
- Publication date Feb 23, 2023
- Lintech Corporation
- Ho Jung YOU
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL INGOT, CRYSTAL GROWTH DIE, AND SINGLE CRYSTAL PRODUC...
- Publication number 20220235490
- Publication date Jul 28, 2022
- AGC Inc.
- Hirohiko KUMAGAI
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM FOR GROWING CRYSTAL SHEETS
- Publication number 20220162772
- Publication date May 26, 2022
- II-VI Delaware, Inc.
- Nathan Stoddard
- C30 - CRYSTAL GROWTH
Information Patent Application
System for Growing Crystal Sheets
- Publication number 20210262120
- Publication date Aug 26, 2021
- II-VI Delaware, Inc.
- Nathan Stoddard
- C30 - CRYSTAL GROWTH
Information Patent Application
DEVICE AND METHOD FOR PRODUCING TUBULAR SINGLE CRYSTAL
- Publication number 20210214855
- Publication date Jul 15, 2021
- KYOCERA CORPORATION
- Ichiro SAKANO
- C30 - CRYSTAL GROWTH
Information Patent Application
DIE FOR EFG-BASED SINGLE CRYSTAL GROWTH, EFG-BASED SINGLE CRYSTAL G...
- Publication number 20210017668
- Publication date Jan 21, 2021
- TDK Corporation
- Katsumi KAWASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL, DIE FOR EFG APPARATUS, EFG APPARATUS, METHOD FOR MA...
- Publication number 20210017667
- Publication date Jan 21, 2021
- KYOCERA CORPORATION
- Akeo FUKUI
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Medical Instrument Made of Mono-Crystalline Shape Memory Alloys and...
- Publication number 20200332440
- Publication date Oct 22, 2020
- DENTSPLY SIRONA INC.
- YONG GAO
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
TRANSPARENT CERAMIC WITH COMPLEX GEOMETRY
- Publication number 20200317578
- Publication date Oct 8, 2020
- Saint-Gobain Ceramics & Plastics, Inc.
- Drew T. HAVEN
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SAPPHIRE RIBBON AND APPARATUS FOR MANUFACTURING SINGLE CRYSTAL RIBBONS
- Publication number 20200308726
- Publication date Oct 1, 2020
- Kyocera Corporation
- Akeo FUKUI
- C30 - CRYSTAL GROWTH
Information Patent Application
TUBULAR SAPPHIRE MEMBER, HEAT EXCHANGER, SEMICONDUCTOR MANUFACTURIN...
- Publication number 20200048790
- Publication date Feb 13, 2020
- KYOCERA CORPORATION
- Ichiro SAKANO
- F28 - HEAT EXCHANGE IN GENERAL
Information Patent Application
APPARATUS FOR CONTROLLING HEAT FLOW WITHIN A SILICON MELT
- Publication number 20190284715
- Publication date Sep 19, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Peter L. Kellerman
- C30 - CRYSTAL GROWTH
Information Patent Application
DIELECTRIC SUBSTRATE FOR SUPERCONDUCTIVE DEVICE AND SUPERCONDUCTIVE...
- Publication number 20190131044
- Publication date May 2, 2019
- TECHNOLOGY INNOVATION MOMENTUM FUND (ISRAEL) LIMITED PARTNERSHIP
- Guy DEUTSCHER
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH WITHSTAND VOLTAGE SCHOTTKY BARRIER DIODE
- Publication number 20180254355
- Publication date Sep 6, 2018
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
MELT FIXTURE AND A SAPPHIRE COMPONENT
- Publication number 20180223446
- Publication date Aug 9, 2018
- Saint-Gobain Ceramics & Plastics, Inc.
- John Walter Locher
- C30 - CRYSTAL GROWTH
Information Patent Application
Medical Instrument Made of Monocrystalline Shape Memory Alloys and...
- Publication number 20180142377
- Publication date May 24, 2018
- DENTSPLY INTERNATIONAL INC.
- Yong Gao
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MAKING A SAPPHIRE COMPONENT
- Publication number 20180016704
- Publication date Jan 18, 2018
- Saint-Gobain Ceramics & Plastics, Inc.
- John Walter Locher
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING BETA PHASE OF GALLIUM OXIDE ([beta]-Ga2O3) SINGL...
- Publication number 20170362738
- Publication date Dec 21, 2017
- FORSCHUNGSVERBUND BERLIN E.V.
- Zbigniew GALAZKA
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND A METHOD OF FORMING A SINGLE CRYSTAL SHEET
- Publication number 20170342591
- Publication date Nov 30, 2017
- Saint-Gobain Ceramics & Plastics, Inc.
- John Walter Locher
- C30 - CRYSTAL GROWTH
Information Patent Application
C-PLANE SAPPHIRE METHOD AND APPARATUS
- Publication number 20170226659
- Publication date Aug 10, 2017
- Saint-Gobain Ceramics & Plastics, Inc.
- VITALI TATARTCHENKO
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR...
- Publication number 20170213918
- Publication date Jul 27, 2017
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR FORMING SINGLE CRYSTAL SAPPHIRE
- Publication number 20170183792
- Publication date Jun 29, 2017
- Saint-Gobain Ceramics & Plastics, Inc.
- Guilford L. Mack
- C30 - CRYSTAL GROWTH
Information Patent Application
BETA-Ga2O3 SINGLE-CRYSTAL SUBSTRATE
- Publication number 20170152610
- Publication date Jun 1, 2017
- TAMURA CORPORATION
- Shinya WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM OXIDE SUBSTRATE
- Publication number 20170137965
- Publication date May 18, 2017
- TAMURA CORPORATION
- Kimiyoshi KOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR MONITORING AND CONTROLLING THICKNESS OF A...
- Publication number 20160168748
- Publication date Jun 16, 2016
- Varian Semiconductor Equipment Associates, Inc.
- Frank Sinclair
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR CULTIVATING BETA-Ga2O3 SINGLE CRYSTAL, AND BETA-Ga2O3-SI...
- Publication number 20160122899
- Publication date May 5, 2016
- Koha Co., Ltd.
- Kimiyoshi KOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR CULTIVATING BETA-Ga2O3 SINGLE CRYSTAL, AND BETA-Ga2O3-SI...
- Publication number 20160115621
- Publication date Apr 28, 2016
- TAMURA CORPORATION
- Kimiyoshi KOSHI
- C30 - CRYSTAL GROWTH

Edge-defined film-fed crystal-growth using dies or slits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing polycrystalline silicon ingot using a cruci...

System for growing crystal sheets

Die for EFG-based single crystal growth, EFG-based single crystal g...

Device and method for producing tubular single crystal

System for growing crystal sheets

Sapphire ribbon and apparatus for manufacturing single crystal ribbons

Method for growing β phase of gallium oxide ([β]-Ga2O3) single crys...

Transparent ceramic with complex geometry

Method for controlling heat flow within a silicon melt using a heat...

Method for growing β-GA2O3-based single crystal

Semiconductor element, method for manufacturing same, semiconductor...

High voltage withstand Ga2O3-based single crystal schottky barrier...

Semiconductor wafer and method

β-Ga2O3 single-crystal substrate

Method of making a sapphire component including machining a sapphir...

Heat exchangers in sapphire processing

Method of forming a single crystal sheet using a die having a therm...

Method for growing B-Ga2O3-based single crystal

Method for growing beta-Ga2O3-based single crystal, and beta-Ga2O3-...

Method for cultivating β-Ga2O3-based single crystal, and β-Ga2O3-ba...

Method for growing β-Ga2O3-based single crystal

Plane orientation of crystalline structures

Continuous sapphire growth

Substrate for epitaxial growth, and crystal laminate structure

Sheet production apparatus for removing a crystalline sheet from th...

Sapphire sheets and apparatus and method for producing sapphire she...

β-Ga2O3-based single crystal substrate

Process for removing nonmetallic impurities from metallurgical silicon

Substrate for epitaxial growth, and crystal laminate structure

Light emitting element and method of making same

Patents Applicationslast 30 patents

POWDER FOR GROWING GALLIUM OXIDE SINGLE CRYSTAL AND METHOD OF MANUF...

QUALITY PREDICTION METHOD, PREPARATION METHOD AND SYSTEM OF HIGH RE...

METHOD FOR MANUFACTURING A MONOCRYSTALLINE SAPPHIRE SEED AS WELL AS...

METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON INGOT USING A CRUCI...

SINGLE CRYSTAL INGOT, CRYSTAL GROWTH DIE, AND SINGLE CRYSTAL PRODUC...

SYSTEM FOR GROWING CRYSTAL SHEETS

System for Growing Crystal Sheets

DEVICE AND METHOD FOR PRODUCING TUBULAR SINGLE CRYSTAL

DIE FOR EFG-BASED SINGLE CRYSTAL GROWTH, EFG-BASED SINGLE CRYSTAL G...

SINGLE CRYSTAL, DIE FOR EFG APPARATUS, EFG APPARATUS, METHOD FOR MA...

Medical Instrument Made of Mono-Crystalline Shape Memory Alloys and...

TRANSPARENT CERAMIC WITH COMPLEX GEOMETRY

SAPPHIRE RIBBON AND APPARATUS FOR MANUFACTURING SINGLE CRYSTAL RIBBONS

TUBULAR SAPPHIRE MEMBER, HEAT EXCHANGER, SEMICONDUCTOR MANUFACTURIN...

APPARATUS FOR CONTROLLING HEAT FLOW WITHIN A SILICON MELT

DIELECTRIC SUBSTRATE FOR SUPERCONDUCTIVE DEVICE AND SUPERCONDUCTIVE...

HIGH WITHSTAND VOLTAGE SCHOTTKY BARRIER DIODE

MELT FIXTURE AND A SAPPHIRE COMPONENT

Medical Instrument Made of Monocrystalline Shape Memory Alloys and...

METHOD OF MAKING A SAPPHIRE COMPONENT

METHOD FOR GROWING BETA PHASE OF GALLIUM OXIDE ([beta]-Ga2O3) SINGL...

APPARATUS AND A METHOD OF FORMING A SINGLE CRYSTAL SHEET

C-PLANE SAPPHIRE METHOD AND APPARATUS

SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR...

APPARATUS FOR FORMING SINGLE CRYSTAL SAPPHIRE

BETA-Ga2O3 SINGLE-CRYSTAL SUBSTRATE

GALLIUM OXIDE SUBSTRATE

APPARATUS AND METHOD FOR MONITORING AND CONTROLLING THICKNESS OF A...

METHOD FOR CULTIVATING BETA-Ga2O3 SINGLE CRYSTAL, AND BETA-Ga2O3-SI...

METHOD FOR CULTIVATING BETA-Ga2O3 SINGLE CRYSTAL, AND BETA-Ga2O3-SI...