Epitaxial deposition of insulating materials

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H01L21/3147

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/3147Epitaxial deposition of insulating materials

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Silicon heterojunction solar cells
- Patent number 9,257,284
- Issue date Feb 9, 2016
- Crystal Solar, Incorporated
- Kramadhati V. Ravi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
High-K heterostructure
- Patent number 8,994,109
- Issue date Mar 31, 2015
- STMicroelectronics S.A.
- Clément Merckling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k heterostructure
- Patent number 8,426,261
- Issue date Apr 23, 2013
- STMicroelectronics S.A.
- Clément Merckling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET having a channel mechanically stressed by an epitaxially gro...
- Patent number 8,044,471
- Issue date Oct 25, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Min Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET having a channel mechanically stressed by an epitaxially gro...
- Patent number 7,772,062
- Issue date Aug 10, 2010
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Min Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming NMOS/PMOS transistors with source/drains includi...
- Patent number 7,682,888
- Issue date Mar 23, 2010
- Samsung Electronics Co., Ltd.
- Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation formation
- Patent number 7,652,334
- Issue date Jan 26, 2010
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating film and electronic device
- Patent number 7,635,900
- Issue date Dec 22, 2009
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric ceramic compound, a ferroelectric ceramic single crys...
- Patent number 7,527,690
- Issue date May 5, 2009
- Ibule Photonics Co., Ltd.
- Sang-Goo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flux assisted solid phase epitaxy
- Patent number 7,507,290
- Issue date Mar 24, 2009
- Japan Science and Technology Agency
- Hideomi Koinuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method of manufacture for integrated circuit and CMOS...
- Patent number 7,408,227
- Issue date Aug 5, 2008
- LSI Corporation
- Mohammad R. Mirabedini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating film and electronic device
- Patent number 7,400,019
- Issue date Jul 15, 2008
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain control of epitaxial oxide films using virtual substrates
- Patent number 7,364,989
- Issue date Apr 29, 2008
- Sharp Laboratories of America, Inc.
- Douglas J. Tweet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation formation
- Patent number 7,348,634
- Issue date Mar 25, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating film and electronic device
- Patent number 7,268,411
- Issue date Sep 11, 2007
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device having a structure of a s...
- Patent number 7,235,467
- Issue date Jun 26, 2007
- National Tsing Hua University
- Ming-Hwei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating film and electronic device
- Patent number 7,208,802
- Issue date Apr 24, 2007
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method of manufacture for integrated circuit and CMOS...
- Patent number 7,138,292
- Issue date Nov 21, 2006
- LSI Logic Corporation
- Mohammad R. Mirabedini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation formation
- Patent number 7,087,531
- Issue date Aug 8, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating film and electronic device
- Patent number 7,026,693
- Issue date Apr 11, 2006
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growth method of an oxide and multi-layered structure of ox...
- Patent number 6,749,686
- Issue date Jun 15, 2004
- Sony Corporation
- Takaaki Ami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non c-axis oriented bismuth-layered perovskite ferroelectric struct...
- Patent number 6,663,989
- Issue date Dec 16, 2003
- Max-Planck-Institut fur Mikrostrukturphysik
- Ho Nyung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-c-axis oriented bismuth-layered perovskite ferroelectric struct...
- Patent number 6,531,235
- Issue date Mar 11, 2003
- Max-Planck-Institute für Mikrostrukturphysik
- Ho Nyung Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH-K HETEROSTRUCTURE
- Publication number 20130200440
- Publication date Aug 8, 2013
- STMicroelectronics S.A.
- Clement Merckling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Heterojunction Solar Cells
- Publication number 20130180578
- Publication date Jul 18, 2013
- Crystal Solar, Incorporated
- Kramadhati V. Ravi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K HETEROSTRUCTURE
- Publication number 20100301420
- Publication date Dec 2, 2010
- Clément Merckling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET HAVING A CHANNEL MECHANICALLY STRESSED BY AN EPITAXIALLY GRO...
- Publication number 20100283109
- Publication date Nov 11, 2010
- Taiwan Semiconductor Manufacturing Co., LTD
- Min CAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20100221917
- Publication date Sep 2, 2010
- Sumitomo Electric Industries, Ltd.
- Takeyoshi Masuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATING FILM AND ELECTRONIC DEVICE
- Publication number 20090020835
- Publication date Jan 22, 2009
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- B82 - NANO-TECHNOLOGY
Information Patent Application
INSULATING FILM AND ELECTRONIC DEVICE
- Publication number 20090014817
- Publication date Jan 15, 2009
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of Forming a Rare-Earth Dielectric Layer
- Publication number 20080286949
- Publication date Nov 20, 2008
- Translucent Photonics, Inc.
- Petar Atanackovic
- C30 - CRYSTAL GROWTH
Information Patent Application
INSULATING FILM AND ELECTRONIC DEVICE
- Publication number 20080272365
- Publication date Nov 6, 2008
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- B82 - NANO-TECHNOLOGY
Information Patent Application
INSULATING FILM AND ELECTRONIC DEVICE
- Publication number 20080272364
- Publication date Nov 6, 2008
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- B82 - NANO-TECHNOLOGY
Information Patent Application
SHALLOW TRENCH ISOLATION FORMATION
- Publication number 20080017932
- Publication date Jan 24, 2008
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flux Assisted Solid Phase Epitaxy
- Publication number 20070209571
- Publication date Sep 13, 2007
- Japan Science and Technology Agency
- Hideomi Koinuma
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods of forming NMOS/PMOS transistors with source/drains includi...
- Publication number 20070048907
- Publication date Mar 1, 2007
- Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and method of manufacture for integrated circuit and CMOS...
- Publication number 20070013006
- Publication date Jan 18, 2007
- LSI Logic Corporation
- Mohammad R. Mirabedini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING A STRUCTURE OF A S...
- Publication number 20070010102
- Publication date Jan 11, 2007
- National Tsing Hua University
- Ming-Hwei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strain control of epitaxial oxide films using virtual substrates
- Publication number 20070004226
- Publication date Jan 4, 2007
- Sharp Laboratories of America, Inc.
- Douglas J. Tweet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow trench isolation formation
- Publication number 20060220148
- Publication date Oct 5, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric ceramic compound, a ferroelectric ceramic single crys...
- Publication number 20060214131
- Publication date Sep 28, 2006
- Sang-Goo Lee
- C30 - CRYSTAL GROWTH
Information Patent Application
Lead zirconate titanate niobate film, lead zirconate titanate nioba...
- Publication number 20060216549
- Publication date Sep 28, 2006
- Seiko Epson Corporation
- Takeshi Kijima
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for low-temperature, hetero-epitaxial growth of thin film cS...
- Publication number 20060208257
- Publication date Sep 21, 2006
- Howard M. Branz
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
MOSFET having a channel mechanically stressed by an epitaxially gro...
- Publication number 20060175671
- Publication date Aug 10, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION FORMATION
- Publication number 20060160363
- Publication date Jul 20, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulating film and electronic device
- Publication number 20060138508
- Publication date Jun 29, 2006
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Insulating film and electronic device
- Publication number 20060131674
- Publication date Jun 22, 2006
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Insulating film and electronic device
- Publication number 20060131673
- Publication date Jun 22, 2006
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Apparatus and method of manufacture for integrated circuit and CMOS...
- Publication number 20050054150
- Publication date Mar 10, 2005
- Mohammad R. Mirabedini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulating film and electronic device
- Publication number 20050040481
- Publication date Feb 24, 2005
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Non-c-axis oriented bismuth-layered perovskite ferroelectric struct...
- Publication number 20030008179
- Publication date Jan 9, 2003
- Ho Nyung Lee
- C30 - CRYSTAL GROWTH
Information Patent Application
Non-c-axis oriented bismuth-layered perovskite ferroelectric struct...
- Publication number 20020197489
- Publication date Dec 26, 2002
- Ho Nyung Lee
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growth method of an oxide and multi-layered structure of ox...
- Publication number 20020119659
- Publication date Aug 29, 2002
- Takaaki Ami
- C30 - CRYSTAL GROWTH

Epitaxial deposition of insulating materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon heterojunction solar cells

High-K heterostructure

High-k heterostructure

MOSFET having a channel mechanically stressed by an epitaxially gro...

MOSFET having a channel mechanically stressed by an epitaxially gro...

Methods of forming NMOS/PMOS transistors with source/drains includi...

Shallow trench isolation formation

Insulating film and electronic device

Ferroelectric ceramic compound, a ferroelectric ceramic single crys...

Flux assisted solid phase epitaxy

Apparatus and method of manufacture for integrated circuit and CMOS...

Insulating film and electronic device

Strain control of epitaxial oxide films using virtual substrates

Shallow trench isolation formation

Insulating film and electronic device

Method for forming a semiconductor device having a structure of a s...

Insulating film and electronic device

Apparatus and method of manufacture for integrated circuit and CMOS...

Shallow trench isolation formation

Insulating film and electronic device

Crystal growth method of an oxide and multi-layered structure of ox...

Non c-axis oriented bismuth-layered perovskite ferroelectric struct...

Non-c-axis oriented bismuth-layered perovskite ferroelectric struct...

Patents Applicationslast 30 patents

HIGH-K HETEROSTRUCTURE

Silicon Heterojunction Solar Cells

HIGH-K HETEROSTRUCTURE

MOSFET HAVING A CHANNEL MECHANICALLY STRESSED BY AN EPITAXIALLY GRO...

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

INSULATING FILM AND ELECTRONIC DEVICE

INSULATING FILM AND ELECTRONIC DEVICE

Method of Forming a Rare-Earth Dielectric Layer

INSULATING FILM AND ELECTRONIC DEVICE

INSULATING FILM AND ELECTRONIC DEVICE

SHALLOW TRENCH ISOLATION FORMATION

Flux Assisted Solid Phase Epitaxy

Methods of forming NMOS/PMOS transistors with source/drains includi...

Apparatus and method of manufacture for integrated circuit and CMOS...

METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING A STRUCTURE OF A S...

Strain control of epitaxial oxide films using virtual substrates

Shallow trench isolation formation

Ferroelectric ceramic compound, a ferroelectric ceramic single crys...

Lead zirconate titanate niobate film, lead zirconate titanate nioba...

Method for low-temperature, hetero-epitaxial growth of thin film cS...

MOSFET having a channel mechanically stressed by an epitaxially gro...

SHALLOW TRENCH ISOLATION FORMATION

Insulating film and electronic device

Insulating film and electronic device

Insulating film and electronic device

Apparatus and method of manufacture for integrated circuit and CMOS...

Insulating film and electronic device

Non-c-axis oriented bismuth-layered perovskite ferroelectric struct...

Non-c-axis oriented bismuth-layered perovskite ferroelectric struct...

Crystal growth method of an oxide and multi-layered structure of ox...