Exchange coupling of amorphous multilayers

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H01F10/3204

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HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

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H01F10/3204Exchange coupling of amorphous multilayers

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Patents Grantslast 30 patents

Information Patent Grant
Magnetic elements of amorphous based dual free layer structures and...
- Patent number 11,776,725
- Issue date Oct 3, 2023
- Western Digital Technologies, Inc.
- Zhitao Diao
- G11 - INFORMATION STORAGE
Information Patent Grant
Amorphous spin diffusion layer for modified double magnetic tunnel...
- Patent number 11,501,810
- Issue date Nov 15, 2022
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic elements of amorphous based dual free layer structures and...
- Patent number 11,430,592
- Issue date Aug 30, 2022
- Western Digital Technologies, Inc.
- Zhitao Diao
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin transfer MRAM element having a voltage bias control
- Patent number 10,953,319
- Issue date Mar 23, 2021
- Yimin Guo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Storage device, manufacturing method therefor, and storage apparatus
- Patent number 10,861,522
- Issue date Dec 8, 2020
- Sony Corporation
- Hiroyuki Ohmori
- G11 - INFORMATION STORAGE
Information Patent Grant
Laminated magnetic materials for on-chip magnetic inductors/transfo...
- Patent number 10,784,045
- Issue date Sep 22, 2020
- International Business Machines Corporation
- Hariklia Deligianni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminated magnetic materials for on-chip magnetic inductors/transfo...
- Patent number 10,763,038
- Issue date Sep 1, 2020
- International Business Machines Corporation
- Hariklia Deligianni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device
- Patent number 10,403,812
- Issue date Sep 3, 2019
- Samsung Electronics Co., Ltd.
- Sung Chul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite free layer for magnetoresistive random access memory
- Patent number 10,347,824
- Issue date Jul 9, 2019
- SanDisk Technologies LLC
- Young-Suk Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strontium oxide as a tunnel barrier for spin injection and giant sp...
- Patent number 10,134,979
- Issue date Nov 20, 2018
- OHIO STATE INNOVATION FOUNDATION
- Roland K. Kawakami
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Magnetic memory device
- Patent number 10,090,458
- Issue date Oct 2, 2018
- Samsung Electronics Co., Ltd.
- Sung Chul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory devices having a perpendicular magnetic tunnel junc...
- Patent number 9,859,333
- Issue date Jan 2, 2018
- Samsung Electronics Co., Ltd.
- Woojin Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive sensor with SAF structure having amorphous alloy l...
- Patent number 9,704,517
- Issue date Jul 11, 2017
- Seagate Technology LLC
- Eric W. Singleton
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory devices having a perpendicular magnetic tunnel junc...
- Patent number 9,490,298
- Issue date Nov 8, 2016
- Samsung Electronics Co., Ltd.
- Woojin Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect device and method of production of the same
- Patent number 8,934,290
- Issue date Jan 13, 2015
- Canon Anelva Corporation
- David D. Djayaprawira
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction having coherent tunneling structure
- Patent number 8,513,752
- Issue date Aug 20, 2013
- Seagate Technology LLC
- Xilin Peng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of production of a magnetoresistance effect device
- Patent number 8,394,649
- Issue date Mar 12, 2013
- Canaon Anelva Corporation
- David D. Djayaprawira
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction having coherent tunneling structure
- Patent number 8,294,228
- Issue date Oct 23, 2012
- Seagate Technology LLC
- Xilin Peng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic field detecting element having a tunnel barrier formed on...
- Patent number 8,264,800
- Issue date Sep 11, 2012
- TDK Corporation
- Takumi Uesugi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction having coherent tunneling structure
- Patent number 8,183,653
- Issue date May 22, 2012
- Seagate Technology LLC
- Xilin Peng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunneling magnetoresistance (TMR) device, its manufacture method, m...
- Patent number 8,072,714
- Issue date Dec 6, 2011
- Fujitsu Limited
- Masashige Sato
- B82 - NANO-TECHNOLOGY
Information Patent Grant
TMR device with surfactant layer on top of CoFexBy/CoFez inner pinn...
- Patent number 7,986,498
- Issue date Jul 26, 2011
- Headway Technologies, Inc.
- Hui-Chuan Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic reading head with first and second element units each incl...
- Patent number 7,969,692
- Issue date Jun 28, 2011
- Hitachi, Ltd.
- Hiromasa Takahashi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming a high performance tunneling magnetoresistive (TM...
- Patent number 7,861,401
- Issue date Jan 4, 2011
- Headway Technologies, Inc.
- Hui-Chuan Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance element magnetic random access memory, magnetic h...
- Patent number 7,855,860
- Issue date Dec 21, 2010
- NEC Corporation
- Nobuyuki Ishiwata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance device with a diffusion barrier between a conduct...
- Patent number 7,742,263
- Issue date Jun 22, 2010
- NEC Corporation
- Yoshiyuki Fukumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive effect element and magnetic memory device
- Patent number 7,700,982
- Issue date Apr 20, 2010
- Sony Corporation
- Masanori Hosomi
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods and apparatus for a synthetic anti-ferromagnet structure wi...
- Patent number 7,684,161
- Issue date Mar 23, 2010
- EVERSPIN TECHNOLOGIES, INC.
- Srinivas V. Pietambaram
- G11 - INFORMATION STORAGE
Information Patent Grant
Process of manufacturing a TMR device
- Patent number 7,497,007
- Issue date Mar 3, 2009
- Headway Technologies, Inc.
- Hui-Chuan Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance device with a diffusion barrier between a conduct...
- Patent number 7,394,626
- Issue date Jul 1, 2008
- NEC Corporation
- Yoshiyuki Fukumoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC ELEMENTS OF AMORPHOUS BASED DUAL FREE LAYER STRUCTURES AND...
- Publication number 20220367099
- Publication date Nov 17, 2022
- Western Digital Technologies, Inc.
- Zhitao DIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMORPHOUS SPIN DIFFUSION LAYER FOR MODIFIED DOUBLE MAGNETIC TUNNEL...
- Publication number 20220301612
- Publication date Sep 22, 2022
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Elements of Amorphous Based Dual Free Layer Structures and...
- Publication number 20220093305
- Publication date Mar 24, 2022
- Western Digital Technologies, Inc.
- Zhitao DIAO
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE, MANUFACTURING METHOD THEREFOR, AND STORAGE APPARATUS
- Publication number 20190279698
- Publication date Sep 12, 2019
- SONY CORPORATION
- Hiroyuki Ohmori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20190013462
- Publication date Jan 10, 2019
- Samsung Electronics Co., Ltd.
- Sung Chul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE FREE LAYER FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20180351087
- Publication date Dec 6, 2018
- SanDisk Technologies LLC
- YOUNG-SUK CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20180123025
- Publication date May 3, 2018
- Sung Chul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DATA READER WITH MAGNETIC SEED LAMINATION
- Publication number 20140218821
- Publication date Aug 7, 2014
- SEAGATE TECHNOLOGY LLC
- Zhengqi Lu
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION OF THE SAME
- Publication number 20140024140
- Publication date Jan 23, 2014
- National Institute of Advanced Industrial Science and Technology
- David D. Djayaprawira
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC TUNNEL JUNCTION HAVING COHERENT TUNNELING STRUCTURE
- Publication number 20130001721
- Publication date Jan 3, 2013
- Seagate Technology LLC
- Xilin Peng
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC TUNNEL JUNCTION HAVING COHERENT TUNNELING STRUCTURE
- Publication number 20120217598
- Publication date Aug 30, 2012
- Seagate Technology LLC
- Xilin Peng
- B82 - NANO-TECHNOLOGY
Information Patent Application
Tunneling magnetoresistance (TMR) device, its manufacture method, m...
- Publication number 20110164448
- Publication date Jul 7, 2011
- Fujitsu Limited
- Masashige Sato
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION OF THE SAME
- Publication number 20110094875
- Publication date Apr 28, 2011
- Canon ANELVA Corporation
- David D. Djayaprawira
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MAGNETIC TUNNEL JUNCTION HAVING COHERENT TUNNELING STRUCTURE
- Publication number 20110006384
- Publication date Jan 13, 2011
- Seagate Technology LLC
- Xilin Peng
- B82 - NANO-TECHNOLOGY
Information Patent Application
TMR device with surfactant layer on top of CoFexBy/CoFez inner pinn...
- Publication number 20090165288
- Publication date Jul 2, 2009
- HEADWAY TECHNOLOGIES, INC.
- Hui-Chuan Wang
- G11 - INFORMATION STORAGE
Information Patent Application
TMR device with surfactant layer on top of cofexby/cofez inner pinn...
- Publication number 20090161266
- Publication date Jun 25, 2009
- Hui-Chuan Wang
- G11 - INFORMATION STORAGE
Information Patent Application
FERROMAGNETIC TUNNEL JUNCTION ELEMENT, MAGNETIC RECORDING DEVICE AN...
- Publication number 20090097170
- Publication date Apr 16, 2009
- Fujitsu Limited
- Masashige Sato
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS AND APPARATUS FOR A SYNTHETIC ANTI-FERROMAGNET STRUCTURE WI...
- Publication number 20090046397
- Publication date Feb 19, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Jijun Sun
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE DEVICE WITH A DIFFUSION BARRIER BETWEEN A CONDUCT...
- Publication number 20080278867
- Publication date Nov 13, 2008
- NEC Corporation
- Yoshiyuki Fukumoto
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF PRODUCTION OF A MAGNETORESISTANCE EFFECT DEVICE
- Publication number 20080180862
- Publication date Jul 31, 2008
- ANELVA CORPORATION
- David D. Djayaprawira
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method Of Production Of A Magnetoresistance Effect Device
- Publication number 20080124454
- Publication date May 29, 2008
- ANELVA CORPORATION
- David D. Djayaprawira
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Tunneling magnetoresistance (TMR) device, its manufacture method, m...
- Publication number 20080112093
- Publication date May 15, 2008
- Fujitsu Limited
- Masashige Sato
- G01 - MEASURING TESTING
Information Patent Application
Magnetoresistance Element Magnetic Random Access Memory, Magnetic H...
- Publication number 20080074799
- Publication date Mar 27, 2008
- Nobuyuki Ishiwata
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTANCE EFFECT DEVICE
- Publication number 20080055793
- Publication date Mar 6, 2008
- ANELVA CORPORATION
- David D. Djayaprawira
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE
- Publication number 20080006860
- Publication date Jan 10, 2008
- SONY CORPORATION
- Masanori Hosomi
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC READING HEAD
- Publication number 20070253116
- Publication date Nov 1, 2007
- Hiromasa Takahashi
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20070253120
- Publication date Nov 1, 2007
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G01 - MEASURING TESTING
Information Patent Application
Methods and apparatus for a synthetic anti-ferromagnet structure wi...
- Publication number 20070243639
- Publication date Oct 18, 2007
- Srinivas V. Pietambaram
- G11 - INFORMATION STORAGE
Information Patent Application
High Frequency Magnetic Thin Film, Composite Magnetic Thin Film and...
- Publication number 20070183923
- Publication date Aug 9, 2007
- TDK Corporation
- Kyung-Ku CHOI
- B82 - NANO-TECHNOLOGY
Information Patent Application
TMR device with surfactant layer on top of CoFexBy/CoFez inner pinn...
- Publication number 20070015293
- Publication date Jan 18, 2007
- HEADWAY TECHNOLOGIES, INC.
- Hui-Chuan Wang
- G11 - INFORMATION STORAGE

Exchange coupling of amorphous multilayers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetic elements of amorphous based dual free layer structures and...

Amorphous spin diffusion layer for modified double magnetic tunnel...

Magnetic elements of amorphous based dual free layer structures and...

Spin transfer MRAM element having a voltage bias control

Storage device, manufacturing method therefor, and storage apparatus

Laminated magnetic materials for on-chip magnetic inductors/transfo...

Laminated magnetic materials for on-chip magnetic inductors/transfo...

Magnetic memory device

Composite free layer for magnetoresistive random access memory

Strontium oxide as a tunnel barrier for spin injection and giant sp...

Magnetic memory device

Magnetic memory devices having a perpendicular magnetic tunnel junc...

Magnetoresistive sensor with SAF structure having amorphous alloy l...

Magnetic memory devices having a perpendicular magnetic tunnel junc...

Magnetoresistance effect device and method of production of the same

Magnetic tunnel junction having coherent tunneling structure

Method of production of a magnetoresistance effect device

Magnetic tunnel junction having coherent tunneling structure

Magnetic field detecting element having a tunnel barrier formed on...

Magnetic tunnel junction having coherent tunneling structure

Tunneling magnetoresistance (TMR) device, its manufacture method, m...

TMR device with surfactant layer on top of CoFexBy/CoFez inner pinn...

Magnetic reading head with first and second element units each incl...

Method of forming a high performance tunneling magnetoresistive (TM...

Magnetoresistance element magnetic random access memory, magnetic h...

Magnetoresistance device with a diffusion barrier between a conduct...

Magnetoresistive effect element and magnetic memory device

Methods and apparatus for a synthetic anti-ferromagnet structure wi...

Process of manufacturing a TMR device

Magnetoresistance device with a diffusion barrier between a conduct...

Patents Applicationslast 30 patents

MAGNETIC ELEMENTS OF AMORPHOUS BASED DUAL FREE LAYER STRUCTURES AND...

AMORPHOUS SPIN DIFFUSION LAYER FOR MODIFIED DOUBLE MAGNETIC TUNNEL...

Magnetic Elements of Amorphous Based Dual Free Layer Structures and...

STORAGE DEVICE, MANUFACTURING METHOD THEREFOR, AND STORAGE APPARATUS

MAGNETIC MEMORY DEVICE

COMPOSITE FREE LAYER FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY

MAGNETIC MEMORY DEVICE

DATA READER WITH MAGNETIC SEED LAMINATION

MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION OF THE SAME

MAGNETIC TUNNEL JUNCTION HAVING COHERENT TUNNELING STRUCTURE

MAGNETIC TUNNEL JUNCTION HAVING COHERENT TUNNELING STRUCTURE

Tunneling magnetoresistance (TMR) device, its manufacture method, m...

MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION OF THE SAME

MAGNETIC TUNNEL JUNCTION HAVING COHERENT TUNNELING STRUCTURE

TMR device with surfactant layer on top of CoFexBy/CoFez inner pinn...

TMR device with surfactant layer on top of cofexby/cofez inner pinn...

FERROMAGNETIC TUNNEL JUNCTION ELEMENT, MAGNETIC RECORDING DEVICE AN...

METHODS AND APPARATUS FOR A SYNTHETIC ANTI-FERROMAGNET STRUCTURE WI...

MAGNETORESISTANCE DEVICE WITH A DIFFUSION BARRIER BETWEEN A CONDUCT...

METHOD OF PRODUCTION OF A MAGNETORESISTANCE EFFECT DEVICE

Method Of Production Of A Magnetoresistance Effect Device

Tunneling magnetoresistance (TMR) device, its manufacture method, m...

Magnetoresistance Element Magnetic Random Access Memory, Magnetic H...

MAGNETORESISTANCE EFFECT DEVICE

MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE

MAGNETIC READING HEAD

MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY

Methods and apparatus for a synthetic anti-ferromagnet structure wi...

High Frequency Magnetic Thin Film, Composite Magnetic Thin Film and...

TMR device with surfactant layer on top of CoFexBy/CoFez inner pinn...