Thin magnetic films

HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES

H01F10/00Thin magnetic films

H01F10/002Antiferromagnetic thin films H01F10/005organic or organo-metallic films H01F10/007ultrathin or granular films H01F10/06characterised by the coupling or physical contact with connecting or interacting conductors H01F10/08characterised by magnetic layers H01F10/10characterised by the composition H01F10/12being metal or alloys H01F10/123having a L10 crystallographic structure H01F10/126containing rare earth metals H01F10/13Amorphous metallic alloys H01F10/131containing iron or nickel H01F10/132containing cobalt H01F10/133containing rare earth metals H01F10/135containing transition metals H01F10/136containing iron H01F10/137containing cobalt H01F10/138containing nanocrystallites H01F10/14containing iron or nickel H01F10/142containing Si H01F10/145containing Al H01F10/147with lattice under strain H01F10/16containing cobalt H01F10/18being compounds H01F10/187Amorphous compounds H01F10/193Magnetic semiconductor compounds H01F10/1933Perovskites H01F10/1936Half-metallic H01F10/20Ferrites H01F10/205Hexagonal ferrites H01F10/22Orthoferrites H01F10/24Garnets H01F10/245Modifications for enhancing interaction with electromagnetic wave energy H01F10/26characterised by the substrate or intermediate layers H01F10/265Magnetic multilayers non exchange-coupled H01F10/28characterised by the composition of the substrate H01F10/30characterised by the composition of the intermediate layers H01F10/32Spin-exchange-coupled multilayers H01F10/3204Exchange coupling of amorphous multilayers H01F10/3209Exchange coupling of garnet multilayers H01F10/3213Exchange coupling of magnetic semiconductor multilayers H01F10/3218Exchange coupling of magnetic films via an antiferromagnetic interface H01F10/3222Exchange coupled hard/soft multilayers H01F10/3227Exchange coupling via one or more magnetisable ultrathin or granular films H01F10/3231via a non-magnetic spacer H01F10/3236made of a noble metal, e.g.(Co/Pt) n multilayers having perpendicular anisotropy H01F10/324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer H01F10/3245the spacer being superconductive H01F10/325the spacer being noble metal H01F10/3254the spacer being semiconducting or insulating H01F10/3259Spin-exchange-coupled multilayers comprising at least a nano-oxide layer [NOL] H01F10/3263the exchange coupling being symmetric H01F10/3268the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface H01F10/3272by use of anti-parallel coupled [APC] ferromagnetic layers H01F10/3277by use of artificial ferrimagnets [AFI] only H01F10/3281only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure H01F10/3286Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy H01F10/329Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current H01F10/3295Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers