Expitaxial deposition of elements of the Fourth Group of the Periodic System

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H01L21/2053

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/2053Expitaxial deposition of elements of the Fourth Group of the Periodic System

Industries

Patents Grantslast 30 patents

Information Patent Grant
Crucible having an improved crystal growth base for manufacturing s...
- Patent number 11,708,646
- Issue date Jul 25, 2023
- Showa Denko K.K.
- Rimpei Kindaichi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated photonics including waveguiding material
- Patent number 11,703,643
- Issue date Jul 18, 2023
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method for depositing an epitaxial layer on a front side of a semic...
- Patent number 11,538,683
- Issue date Dec 27, 2022
- Siltronic AG
- Joerg Haberecht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with multiple halo implants having epitaxial l...
- Patent number 11,488,871
- Issue date Nov 1, 2022
- Samar K. Saha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structure for semiconductor device
- Patent number 11,404,274
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsiao-Chun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide epitaxial substrate
- Patent number 11,373,868
- Issue date Jun 28, 2022
- Sumitomo Electric Industries, Ltd.
- Hironori Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for a semiconductor device including a polysil...
- Patent number 11,295,954
- Issue date Apr 5, 2022
- Mitsubishi Electric Corporation
- Yasushi Takaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond semiconductor system and method
- Patent number 11,107,684
- Issue date Aug 31, 2021
- AKHAN SEMICONDUCTOR, INC.
- Adam Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer
- Patent number 10,865,500
- Issue date Dec 15, 2020
- Showa Denko K.K.
- Jun Norimatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated photonics including germanium
- Patent number 10,830,952
- Issue date Nov 10, 2020
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- G02 - OPTICS
Information Patent Grant
Substrate processing apparatus
- Patent number 10,741,396
- Issue date Aug 11, 2020
- Eugene Technology Co., Ltd.
- Woo Duck Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide epitaxial substrate, metho...
- Patent number 10,697,086
- Issue date Jun 30, 2020
- Sumitomo Electric Industries, Ltd
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas flow control for EPI thickness uniformity improvement
- Patent number 10,607,837
- Issue date Mar 31, 2020
- Applied Materials, Inc.
- Masato Ishii
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated photonics including waveguiding material
- Patent number 10,571,631
- Issue date Feb 25, 2020
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Diamond semiconductor system and method
- Patent number 10,546,749
- Issue date Jan 28, 2020
- AKHAN SEMICONDUCTOR, INC.
- Adam Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal laminate structure
- Patent number 10,538,862
- Issue date Jan 21, 2020
- Tamura Corporation
- Ken Goto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 10,526,699
- Issue date Jan 7, 2020
- Sumitomo Electric Industries, Ltd
- Kenji Kanbara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Chlorosilylarylgermanes, method for preparation thereof and use the...
- Patent number 10,414,783
- Issue date Sep 17, 2019
- Evonik Degussa GmbH
- Julian Teichmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated photonics including germanium
- Patent number 10,295,745
- Issue date May 21, 2019
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- G02 - OPTICS
Information Patent Grant
Method to reduce variability in contact resistance
- Patent number 10,147,680
- Issue date Dec 4, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting device, light emitting device package, light unit, a...
- Patent number 10,038,119
- Issue date Jul 31, 2018
- LG Innotek Co., Ltd
- Keon Hwa Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing resistive element, method for manufacturin...
- Patent number 10,032,936
- Issue date Jul 24, 2018
- Seiko Epson Corporation
- Hiroyuki Shimada
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method of doped germanium formation
- Patent number 9,966,438
- Issue date May 8, 2018
- Applied Materials, Inc.
- Yi-Chiau Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated photonics including germanium
- Patent number 9,864,138
- Issue date Jan 9, 2018
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- G02 - OPTICS
Information Patent Grant
Method to reduce variability in contact resistance
- Patent number 9,837,357
- Issue date Dec 5, 2017
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating double sided Si(Ge)/Sapphire/III-nitride hybr...
- Patent number 9,824,885
- Issue date Nov 21, 2017
- The Unites States of America as represented by the Administrator of NASA
- Yeonjoon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure and fabrication methods with an epitaxial laye...
- Patent number 9,768,074
- Issue date Sep 19, 2017
- Samar K. Saha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type resistor
- Patent number 9,691,758
- Issue date Jun 27, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an electrical contact
- Patent number 9,633,853
- Issue date Apr 25, 2017
- Imec VZW
- Antony Premkumar Peter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structures having silicon germanium and silicon channels
- Patent number 9,589,848
- Issue date Mar 7, 2017
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EPITAXIAL GROWTH DEVICE
- Publication number 20220384192
- Publication date Dec 1, 2022
- ZHEJIANG QIUSHI SEMICONDUCTOR EQUIPMENT CO., LTD
- Liang ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING AN EPITAXIAL WAFER
- Publication number 20220359195
- Publication date Nov 10, 2022
- GLOBALWAFERS CO., LTD.
- Maria Porrini
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL MANUFACTURING APPARATUS AND METHOD O...
- Publication number 20220205137
- Publication date Jun 30, 2022
- SHOWA DENKO K.K.
- Rimpei KINDAICHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC EPITAXIAL SUBSTRATE MANUFACTURING METHOD AND MANUFACTURING DEVI...
- Publication number 20220181156
- Publication date Jun 9, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMEN...
- Publication number 20220064818
- Publication date Mar 3, 2022
- KYOCERA CORPORATION
- Masahiro ARAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE
- Publication number 20220059350
- Publication date Feb 24, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsiao-Chun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20220044934
- Publication date Feb 10, 2022
- Sumitomo Electric Industries, Ltd.
- Hironori ITOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diamond Semiconductor System And Method
- Publication number 20210384032
- Publication date Dec 9, 2021
- AKHAN Semiconductor, Inc.
- Adam Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPOSITING AN EPITAXIAL LAYER ON A FRONT SIDE OF A SEMIC...
- Publication number 20200294794
- Publication date Sep 17, 2020
- Siltronic AG
- Joerg Haberecht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAMOND SEMICONDUCTOR SYSTEM AND METHOD
- Publication number 20200266067
- Publication date Aug 20, 2020
- Adam Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED PHOTONICS INCLUDING WAVEGUIDING MATERIAL
- Publication number 20200158954
- Publication date May 21, 2020
- Douglas Coolbaugh
- G02 - OPTICS
Information Patent Application
TRANSISTOR STRUCTURE WITH MULTIPLE HALO IMPLANTS HAVING EPITAXIAL L...
- Publication number 20200135583
- Publication date Apr 30, 2020
- Samar K. Saha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL LAMINATE STRUCTURE
- Publication number 20200102667
- Publication date Apr 2, 2020
- TAMURA CORPORATION
- Ken GOTO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATED PHOTONICS INCLUDING GERMANIUM
- Publication number 20200026003
- Publication date Jan 23, 2020
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Epitaxial Substrate and Method for Manufacturing Si...
- Publication number 20190242014
- Publication date Aug 8, 2019
- Kenji KANBARA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
- Publication number 20190115217
- Publication date Apr 18, 2019
- Mitsubishi Electric Corporation
- Yasushi TAKAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED PHOTONICS INCLUDING GERMANIUM
- Publication number 20190025513
- Publication date Jan 24, 2019
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE, METHO...
- Publication number 20180237942
- Publication date Aug 23, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD TO REDUCE VARIABILITY IN CONTACT RESISTANCE
- Publication number 20180226352
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Praneet ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING APPARATUS
- Publication number 20180090323
- Publication date Mar 29, 2018
- EUGENE TECHNOLOGY CO., LTD.
- Woo Duck JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS FLOW CONTROL FOR EPI THICKNESS UNIFORMITY IMPROVEMENT
- Publication number 20180053653
- Publication date Feb 22, 2018
- Applied Materials, Inc.
- Masato ISHII
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER
- Publication number 20180016706
- Publication date Jan 18, 2018
- SHOWA DENKO K.K.
- Jun NORIMATSU
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, LIGHT UNIT, A...
- Publication number 20170352785
- Publication date Dec 7, 2017
- LG Innotek Co., Ltd.
- Keon Hwa LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Selective Growth of Highly Doped Group IV - Sn Semicondu...
- Publication number 20140024204
- Publication date Jan 23, 2014
- IMECA
- Andriy Hikavyy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diamond Semiconductor System and Method
- Publication number 20130175546
- Publication date Jul 11, 2013
- AKHAN Technologies, Inc.
- Adam Khan
- H01 - BASIC ELECTRIC ELEMENTS

Expitaxial deposition of elements of the Fourth Group of the Periodic System

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Crucible having an improved crystal growth base for manufacturing s...

Integrated photonics including waveguiding material

Method for depositing an epitaxial layer on a front side of a semic...

Transistor structure with multiple halo implants having epitaxial l...

Source/drain structure for semiconductor device

Method for manufacturing silicon carbide epitaxial substrate

Manufacturing method for a semiconductor device including a polysil...

Diamond semiconductor system and method

SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer

Integrated photonics including germanium

Substrate processing apparatus

Method for manufacturing silicon carbide epitaxial substrate, metho...

Gas flow control for EPI thickness uniformity improvement

Integrated photonics including waveguiding material

Diamond semiconductor system and method

Crystal laminate structure

Silicon carbide epitaxial substrate and method for manufacturing si...

Chlorosilylarylgermanes, method for preparation thereof and use the...

Integrated photonics including germanium

Method to reduce variability in contact resistance

Light emitting device, light emitting device package, light unit, a...

Method for manufacturing resistive element, method for manufacturin...

Method of doped germanium formation

Integrated photonics including germanium

Method to reduce variability in contact resistance

Method of fabricating double sided Si(Ge)/Sapphire/III-nitride hybr...

Transistor structure and fabrication methods with an epitaxial laye...

Fin-type resistor

Method for forming an electrical contact

FinFET structures having silicon germanium and silicon channels

Patents Applicationslast 30 patents

EPITAXIAL GROWTH DEVICE

METHODS FOR FORMING AN EPITAXIAL WAFER

SILICON CARBIDE SINGLE CRYSTAL MANUFACTURING APPARATUS AND METHOD O...

SiC EPITAXIAL SUBSTRATE MANUFACTURING METHOD AND MANUFACTURING DEVI...

METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMEN...

SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE

Diamond Semiconductor System And Method

METHOD FOR DEPOSITING AN EPITAXIAL LAYER ON A FRONT SIDE OF A SEMIC...

DIAMOND SEMICONDUCTOR SYSTEM AND METHOD

INTEGRATED PHOTONICS INCLUDING WAVEGUIDING MATERIAL

TRANSISTOR STRUCTURE WITH MULTIPLE HALO IMPLANTS HAVING EPITAXIAL L...

CRYSTAL LAMINATE STRUCTURE

INTEGRATED PHOTONICS INCLUDING GERMANIUM

Silicon Carbide Epitaxial Substrate and Method for Manufacturing Si...

MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

INTEGRATED PHOTONICS INCLUDING GERMANIUM

METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE, METHO...

METHOD TO REDUCE VARIABILITY IN CONTACT RESISTANCE

SUBSTRATE PROCESSING APPARATUS

GAS FLOW CONTROL FOR EPI THICKNESS UNIFORMITY IMPROVEMENT

SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, LIGHT UNIT, A...

Method for Selective Growth of Highly Doped Group IV - Sn Semicondu...

Diamond Semiconductor System and Method