FET isolation

Industry

CPC
H01L2027/11831

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

Current Industry

H01L2027/11831FET isolation

Industries

Patents Grantslast 30 patents

Information Patent Grant
Increasing device density and reducing cross-talk spacer structures
- Patent number 12,148,795
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimization of semiconductor cell of vertical field effect transis...
- Patent number 12,068,325
- Issue date Aug 20, 2024
- Samsung Electronics Co., Ltd.
- Jung Ho Do
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and method of forming the same
- Patent number 11,955,486
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor circuit with metal structure and manufacturing method
- Patent number 11,721,701
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimization of semiconductor cell of vertical field effect transis...
- Patent number 11,581,338
- Issue date Feb 14, 2023
- Samsung Electronics Co., Ltd.
- Jung Ho Do
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contacts with airgap isolation
- Patent number 11,545,548
- Issue date Jan 3, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increasing device density and reducing cross-talk spacer structures
- Patent number 11,527,609
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including standard cells and SRAM cells
- Patent number 11,476,278
- Issue date Oct 18, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,404,443
- Issue date Aug 2, 2022
- Samsung Electronics Co., Ltd.
- Taejoong Song
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor circuit with metal structure and manufacturing method
- Patent number 11,282,859
- Issue date Mar 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for high performance standard cell design techniques in FinF...
- Patent number 11,271,011
- Issue date Mar 8, 2022
- Samsung Electronics Co., Ltd.
- Shyam Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including standard cell
- Patent number 11,239,151
- Issue date Feb 1, 2022
- Samsung Electronics Co., Ltd.
- In-gyum Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including vertical capacitors
- Patent number 11,152,068
- Issue date Oct 19, 2021
- Texas Instruments Incorporated
- Xiang-Zheng Bo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and method of forming the same
- Patent number 11,094,695
- Issue date Aug 17, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Well contact cell with doped tap region separated from active regio...
- Patent number 10,909,298
- Issue date Feb 2, 2021
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Nigel Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor circuit with metal structure having different pitches
- Patent number 10,854,635
- Issue date Dec 1, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including standard cells and SRAM cells
- Patent number 10,825,835
- Issue date Nov 3, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Standard cell architecture for gate tie-off
- Patent number 10,784,345
- Issue date Sep 22, 2020
- QUALCOMM Incorporated
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Standard cell architecture for gate tie-off
- Patent number 10,777,640
- Issue date Sep 15, 2020
- QUALCOMM Incorporated
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor circuit with metal structure and manufacturing method
- Patent number 10,756,114
- Issue date Aug 25, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for high performance standard cell design techniques in FinF...
- Patent number 10,748,932
- Issue date Aug 18, 2020
- Samsung Electronics Co., Ltd.
- Shyam Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power gate switching system
- Patent number 10,680,015
- Issue date Jun 9, 2020
- Samsung Electronics Co., Ltd.
- Hoijin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including standard cell
- Patent number 10,672,702
- Issue date Jun 2, 2020
- Samsung Electronics Co., Ltd.
- In-gyum Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including vertical capacitors
- Patent number 10,622,073
- Issue date Apr 14, 2020
- Texas Instruments Incorporated
- Xiang-Zheng Bo
- G11 - INFORMATION STORAGE
Information Patent Grant
Standard cell architecture for gate tie-off
- Patent number 10,600,866
- Issue date Mar 24, 2020
- QUALCOMM Incorporated
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,424,591
- Issue date Sep 24, 2019
- Renesas Electronics Corporation
- Tamotsu Ogata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut method
- Patent number 10,396,206
- Issue date Aug 27, 2019
- GLOBALFOUNDRIES Inc.
- Ashish Kumar Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including standard cell
- Patent number 10,354,947
- Issue date Jul 16, 2019
- Samsung Electronics Co., Ltd.
- In-gyum Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power gate switching system
- Patent number 10,141,336
- Issue date Nov 27, 2018
- Samsung Electronics Co., Ltd.
- Hoijin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for high performance standard cell design techniques in finF...
- Patent number 10,103,172
- Issue date Oct 16, 2018
- Samsung Electronics Co., Ltd.
- Shyam Agarwal
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INCREASING DEVICE DENSITY AND REDUCING CROSS-TALK SPACER STRUCTURES
- Publication number 20240379745
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE INTERCONNECT STRUCTURES
- Publication number 20240297167
- Publication date Sep 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Device and Method of Forming the Same
- Publication number 20240274605
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240047522
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240006417
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure and manufacturing method thereof
- Publication number 20240006405
- Publication date Jan 4, 2024
- UNITED MICROELECTRONICS CORP.
- Chun-Hsien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20230290783
- Publication date Sep 14, 2023
- Samsung Electronics Co., Ltd.
- Jeongsoon Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZATION OF SEMICONDUCTOR CELL OF VERTICAL FIELD EFFECT TRANSIS...
- Publication number 20230178558
- Publication date Jun 8, 2023
- Samsung Electronics Co., Ltd.
- Jung Ho Do
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230023711
- Publication date Jan 26, 2023
- Samsung Electronics Co., Ltd.
- KYUBONG CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACTS WITH AIRGAP ISOLATION
- Publication number 20220416020
- Publication date Dec 29, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC INCLUDING STANDARD CELLS AND SRAM CELLS
- Publication number 20220375964
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING DEVICE DENSITY AND REDUCING CROSS-TALK SPACER STRUCTURES
- Publication number 20220359649
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING DEVICE DENSITY AND REDUCING CROSS-TALK SPACER STRUCTURES
- Publication number 20210134944
- Publication date May 6, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimization of Semiconductor Cell of Vertical Field Effect Transis...
- Publication number 20210104550
- Publication date Apr 8, 2021
- Samsung Electronics Co., Ltd.
- Jung Ho Do
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC INCLUDING STANDARD CELLS AND SRAM CELLS
- Publication number 20210050373
- Publication date Feb 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Circuit with Metal Structure and Manufacturing Method
- Publication number 20210043655
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR HIGH PERFORMANCE STANDARD CELL DESIGN TECHNIQUES IN FINF...
- Publication number 20200343267
- Publication date Oct 29, 2020
- Samsung Electronics Co., Ltd.
- Shyam Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING VERTICAL CAPACITORS
- Publication number 20200219566
- Publication date Jul 9, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Xiang-Zheng BO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200212069
- Publication date Jul 2, 2020
- Samsung Electronics Co., Ltd.
- Taejoong SONG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NOVEL STANDARD CELL ARCHITECTURE FOR GATE TIE-OFF
- Publication number 20200176562
- Publication date Jun 4, 2020
- QUALCOMM Incorporated
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STANDARD CELL ARCHITECTURE FOR GATE TIE-OFF
- Publication number 20200176563
- Publication date Jun 4, 2020
- QUALCOMM Incorporated
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING VERTICAL CAPACITORS
- Publication number 20190348119
- Publication date Nov 14, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Xiang-Zheng BO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER GATE SWITCHING SYSTEM
- Publication number 20190088679
- Publication date Mar 21, 2019
- Samsung Electronics Co., Ltd.
- HOIJIN LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR HIGH PERFORMANCE STANDARD CELL DESIGN TECHNIQUES IN FINF...
- Publication number 20190006388
- Publication date Jan 3, 2019
- Samsung Electronics Co., Ltd.
- Shyam Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20180350838
- Publication date Dec 6, 2018
- Samsung Electronics Co., Ltd.
- Taejoong SONG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CIRCUIT CELLS HAVING SEPARATED GATE ELECTRODES
- Publication number 20180286884
- Publication date Oct 4, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon-Jhy LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR HIGH PERFORMANCE STANDARD CELL DESIGN TECHNIQUES IN FINF...
- Publication number 20180083036
- Publication date Mar 22, 2018
- SAMSUNG ELETRONICS CO., LTD.
- Shyam AGARWAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER GATE SWITCHING SYSTEM
- Publication number 20180012906
- Publication date Jan 11, 2018
- Samsung Electronics Co., Ltd.
- HOIJIN LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER GATE SWITCHING SYSTEM
- Publication number 20170062474
- Publication date Mar 2, 2017
- Samsung Electronics Co., Ltd.
- HOIJIN LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170062475
- Publication date Mar 2, 2017
- Samsung Electronics Co., Ltd.
- Taejoong SONG
- G06 - COMPUTING CALCULATING COUNTING

FET isolation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Increasing device density and reducing cross-talk spacer structures

Optimization of semiconductor cell of vertical field effect transis...

Integrated circuit device and method of forming the same

Semiconductor circuit with metal structure and manufacturing method

Optimization of semiconductor cell of vertical field effect transis...

Gate contacts with airgap isolation

Increasing device density and reducing cross-talk spacer structures

IC including standard cells and SRAM cells

Semiconductor device

Semiconductor circuit with metal structure and manufacturing method

Method for high performance standard cell design techniques in FinF...

Integrated circuit including standard cell

Integrated circuit including vertical capacitors

Integrated circuit device and method of forming the same

Well contact cell with doped tap region separated from active regio...

Semiconductor circuit with metal structure having different pitches

IC including standard cells and SRAM cells

Standard cell architecture for gate tie-off

Standard cell architecture for gate tie-off

Semiconductor circuit with metal structure and manufacturing method

Method for high performance standard cell design techniques in FinF...

Power gate switching system

Integrated circuit including standard cell

Integrated circuit including vertical capacitors

Standard cell architecture for gate tie-off

Semiconductor device and manufacturing method thereof

Gate cut method

Integrated circuit including standard cell

Power gate switching system

Method for high performance standard cell design techniques in finF...

Patents Applicationslast 30 patents

INCREASING DEVICE DENSITY AND REDUCING CROSS-TALK SPACER STRUCTURES

SELF-ALIGNED BACKSIDE INTERCONNECT STRUCTURES

Integrated Circuit Device and Method of Forming the Same

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE

Semiconductor structure and manufacturing method thereof

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

OPTIMIZATION OF SEMICONDUCTOR CELL OF VERTICAL FIELD EFFECT TRANSIS...

SEMICONDUCTOR DEVICE

GATE CONTACTS WITH AIRGAP ISOLATION

IC INCLUDING STANDARD CELLS AND SRAM CELLS

INCREASING DEVICE DENSITY AND REDUCING CROSS-TALK SPACER STRUCTURES

INCREASING DEVICE DENSITY AND REDUCING CROSS-TALK SPACER STRUCTURES

Optimization of Semiconductor Cell of Vertical Field Effect Transis...

IC INCLUDING STANDARD CELLS AND SRAM CELLS

Semiconductor Circuit with Metal Structure and Manufacturing Method

METHOD FOR HIGH PERFORMANCE STANDARD CELL DESIGN TECHNIQUES IN FINF...

INTEGRATED CIRCUIT INCLUDING VERTICAL CAPACITORS

SEMICONDUCTOR DEVICE

NOVEL STANDARD CELL ARCHITECTURE FOR GATE TIE-OFF

STANDARD CELL ARCHITECTURE FOR GATE TIE-OFF

INTEGRATED CIRCUIT INCLUDING VERTICAL CAPACITORS

POWER GATE SWITCHING SYSTEM

METHOD FOR HIGH PERFORMANCE STANDARD CELL DESIGN TECHNIQUES IN FINF...

SEMICONDUCTOR DEVICE

CIRCUIT CELLS HAVING SEPARATED GATE ELECTRODES

METHOD FOR HIGH PERFORMANCE STANDARD CELL DESIGN TECHNIQUES IN FINF...

POWER GATE SWITCHING SYSTEM

POWER GATE SWITCHING SYSTEM

SEMICONDUCTOR DEVICE