Flash programming of all the cells in an array, sector or block simultaneously

Industry

CPC
G11C2216/16

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C2216/00Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups

Current Industry

G11C2216/16Flash programming of all the cells in an array, sector or block simultaneously

Industries

Patents Grantslast 30 patents

Information Patent Grant
First-pass continuous read level calibration
- Patent number 11,908,536
- Issue date Feb 20, 2024
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Grant
Peak and average ICC reduction by tier-based sensing during program...
- Patent number 11,699,494
- Issue date Jul 11, 2023
- SanDisk Technologies LLC
- Xue Bai Pitner
- G11 - INFORMATION STORAGE
Information Patent Grant
First-pass dynamic program targeting (DPT)
- Patent number 11,651,828
- Issue date May 16, 2023
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent programming of multiple cells for non-volatile memory de...
- Patent number 11,545,221
- Issue date Jan 3, 2023
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
First-pass continuous read level calibration
- Patent number 11,495,322
- Issue date Nov 8, 2022
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent programming of multiple cells for non-volatile memory de...
- Patent number 11,342,028
- Issue date May 24, 2022
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and method with selection transistor pr...
- Patent number 11,257,554
- Issue date Feb 22, 2022
- SK Hynix Inc.
- Eun Young Park
- G11 - INFORMATION STORAGE
Information Patent Grant
First-pass dynamic program targeting (DPT)
- Patent number 11,069,416
- Issue date Jul 20, 2021
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of erasing data in nonvolatile memory device, nonvolatile me...
- Patent number 11,056,194
- Issue date Jul 6, 2021
- Samsung Electronics Co., Ltd.
- Won-Bo Shim
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent programming of multiple cells for non-volatile memory de...
- Patent number 10,978,156
- Issue date Apr 13, 2021
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device with improved threshold voltage distrib...
- Patent number 10,839,926
- Issue date Nov 17, 2020
- SK Hynix Inc.
- Eun Young Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of erasing data in nonvolatile memory device, nonvolatile me...
- Patent number 10,825,532
- Issue date Nov 3, 2020
- Samsung Electronics Co., Ltd.
- Won-Bo Shim
- G11 - INFORMATION STORAGE
Information Patent Grant
Controller and operating method thereof
- Patent number 10,679,705
- Issue date Jun 9, 2020
- SK Hynix Inc.
- Geu Rim Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
First-pass continuous read level calibration
- Patent number 10,658,066
- Issue date May 19, 2020
- Micron Technology, Inc.
- Michael Sheperek
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Method of erasing data in nonvolatile memory device, nonvolatile me...
- Patent number 10,658,043
- Issue date May 19, 2020
- Samsung Electronics Co., Ltd.
- Won-Bo Shim
- G11 - INFORMATION STORAGE
Information Patent Grant
First-pass dynamic program targeting (DPT)
- Patent number 10,629,278
- Issue date Apr 21, 2020
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Grant
Failure prediction by cell probing
- Patent number 10,410,732
- Issue date Sep 10, 2019
- Western Digital Technologies, Inc.
- Tomer Tzvi Eliash
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device with improved program verification reli...
- Patent number 10,340,019
- Issue date Jul 2, 2019
- SK Hynix Inc.
- Eun Young Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and method of operating the same
- Patent number 10,210,942
- Issue date Feb 19, 2019
- SK Hynix Inc.
- Se Hoon Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device, storage device including nonvolatile mem...
- Patent number 10,121,542
- Issue date Nov 6, 2018
- Samsung Electronics Co., Ltd.
- Sang-Wan Nam
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device with improved program verification reli...
- Patent number 9,892,801
- Issue date Feb 13, 2018
- SK Hynix Inc.
- Eun Young Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses and methods for non-volatile memory programming schemes
- Patent number 9,576,667
- Issue date Feb 21, 2017
- Micron Technology, Inc.
- Akira Goda
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory read performance
- Patent number 9,122,590
- Issue date Sep 1, 2015
- Marvell International Ltd.
- Xueshi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory read performance
- Patent number 8,611,151
- Issue date Dec 17, 2013
- Marvell International Ltd.
- Xueshi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Partial block data programming and reading operations in a non-vola...
- Patent number 8,316,177
- Issue date Nov 20, 2012
- SanDisk Corporation
- Kevin M. Conley
- G11 - INFORMATION STORAGE
Information Patent Grant
Partial block data programming and reading operations in a non-vola...
- Patent number 7,970,987
- Issue date Jun 28, 2011
- SanDisk Corporation
- Kevin M. Conley
- G11 - INFORMATION STORAGE
Information Patent Grant
Partial block data programming and reading operations in a non-vola...
- Patent number 7,818,490
- Issue date Oct 19, 2010
- SanDisk Corporation
- Kevin M. Conley
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory with improved programming precision
- Patent number 7,679,965
- Issue date Mar 16, 2010
- Sandisk IL Ltd.
- Menahem Lasser
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash storage system with write-erase abort detection mechanism
- Patent number 7,669,004
- Issue date Feb 23, 2010
- SanDisk Corporation
- Jason T. Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of improving programming precision in flash memory
- Patent number 7,660,166
- Issue date Feb 9, 2010
- Sandisk IL Ltd.
- Menahem Lasser
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
FIRST-PASS CONTINUOUS READ LEVEL CALIBRATION
- Publication number 20230054653
- Publication date Feb 23, 2023
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Application
PEAK AND AVERAGE ICC REDUCTION BY TIER-BASED SENSING DURING PROGRAM...
- Publication number 20220392552
- Publication date Dec 8, 2022
- SANDISK TECHNOLOGIES LLC
- Xue Bai Pitner
- G11 - INFORMATION STORAGE
Information Patent Application
CONCURRENT PROGRAMMING OF MULTIPLE CELLS FOR NON-VOLATILE MEMORY DE...
- Publication number 20210358553
- Publication date Nov 18, 2021
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
FIRST-PASS DYNAMIC PROGRAM TARGETING (DPT)
- Publication number 20210343353
- Publication date Nov 4, 2021
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Application
CONCURRENT PROGRAMMING OF MULTIPLE CELLS FOR NON-VOLATILE MEMORY DE...
- Publication number 20210233589
- Publication date Jul 29, 2021
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE WITH IMPROVED THRESHOLD VOLTAGE DISTRIB...
- Publication number 20210027851
- Publication date Jan 28, 2021
- SK HYNIX INC.
- Eun Young PARK
- G11 - INFORMATION STORAGE
Information Patent Application
FIRST-PASS DYNAMIC PROGRAM TARGETING (DPT)
- Publication number 20200312419
- Publication date Oct 1, 2020
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Application
FIRST-PASS CONTINUOUS READ LEVEL CALIBRATION
- Publication number 20200243156
- Publication date Jul 30, 2020
- Micron Technology, Inc.
- Michael Sheperek
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
FIRST-PASS DYNAMIC PROGRAM TARGETING (DPT)
- Publication number 20200075111
- Publication date Mar 5, 2020
- Micron Technology, Inc.
- Michael Sheperek
- G11 - INFORMATION STORAGE
Information Patent Application
FIRST-PASS CONTINUOUS READ LEVEL CALIBRATION
- Publication number 20200075120
- Publication date Mar 5, 2020
- Micron Technology, Inc.
- Michael Sheperek
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
CONCURRENT PROGRAMMING OF MULTIPLE CELLS FOR NON-VOLATILE MEMORY DE...
- Publication number 20200005871
- Publication date Jan 2, 2020
- SanDisk Technologies LLC
- Xiang YANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE WITH IMPROVED PROGRAM VERIFICATION RELI...
- Publication number 20190272883
- Publication date Sep 5, 2019
- SK HYNIX INC.
- Eun Young PARK
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF ERASING DATA IN NONVOLATILE MEMORY DEVICE, NONVOLATILE ME...
- Publication number 20190198118
- Publication date Jun 27, 2019
- Samsung Electronics Co., Ltd.
- WON-BO SHIM
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROLLER AND OPERATING METHOD THEREOF
- Publication number 20180374539
- Publication date Dec 27, 2018
- SK HYNIX INC.
- Geu Rim LEE
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Multi-Host Intelligent Block Level Provisioning
- Publication number 20180330768
- Publication date Nov 15, 2018
- SEAGATE TECHNOLOGY LLC
- Thomas Roy Prohofsky
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE WITH IMPROVED PROGRAM VERIFICATION RELI...
- Publication number 20180130540
- Publication date May 10, 2018
- SK HYNIX INC.
- Eun Young PARK
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING NONVOLATILE MEM...
- Publication number 20180053554
- Publication date Feb 22, 2018
- Samsung Electronics Co., Ltd.
- SANG-WAN NAM
- G11 - INFORMATION STORAGE
Information Patent Application
Partial Block Data Programming And Reading Operations In A Non-Vola...
- Publication number 20110258386
- Publication date Oct 20, 2011
- Kevin M. Conley
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Partial Block Data Programming And Reading Operations In A Non-Vola...
- Publication number 20110029724
- Publication date Feb 3, 2011
- Kevin M. Conley
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Partial Block Data Programming And Reading Operations In A Non-Vola...
- Publication number 20090150601
- Publication date Jun 11, 2009
- Kevin M. Conley
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Flash Memory With Improved Programming Precision
- Publication number 20080180996
- Publication date Jul 31, 2008
- SANDISK IL LTD.
- Menahem Lasser
- G11 - INFORMATION STORAGE
Information Patent Application
Method Of Improving Programming Precision In Flash Memory
- Publication number 20080181000
- Publication date Jul 31, 2008
- SANDISK IL LTD.
- Menahem Lasser
- G11 - INFORMATION STORAGE
Information Patent Application
Flash Storage System with Write-Erase Abort Detection Mechanism
- Publication number 20080065818
- Publication date Mar 13, 2008
- Jason Lin
- G11 - INFORMATION STORAGE
Information Patent Application
Data write circuit and data write method for semiconductor storage...
- Publication number 20060044869
- Publication date Mar 2, 2006
- Oki Electric Industry Co., Ltd.
- Kazuhiko Oyama
- G11 - INFORMATION STORAGE
Information Patent Application
Partial block data programming and reading operations in a non-vola...
- Publication number 20060031627
- Publication date Feb 9, 2006
- Kevin M. Conley
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Non-volatile memory and write method of the same
- Publication number 20050141277
- Publication date Jun 30, 2005
- FUJITSU LIMITED
- Takaaki Furuyama
- G11 - INFORMATION STORAGE
Information Patent Application
Flash storage system with write/erase abort detection mechanism
- Publication number 20050144362
- Publication date Jun 30, 2005
- Jason Lin
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor memory device in which source line potential is contr...
- Publication number 20050094441
- Publication date May 5, 2005
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Application
Method and system for efficiently reading and programmming of dual...
- Publication number 20050024946
- Publication date Feb 3, 2005
- SanDisk Corporation
- Raul A. Cernea
- G11 - INFORMATION STORAGE
Information Patent Application
Partial block data programming and reading operations in a non-vola...
- Publication number 20040210708
- Publication date Oct 21, 2004
- Kevin M. Conley
- G06 - COMPUTING CALCULATING COUNTING

Flash programming of all the cells in an array, sector or block simultaneously

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

First-pass continuous read level calibration

Peak and average ICC reduction by tier-based sensing during program...

First-pass dynamic program targeting (DPT)

Concurrent programming of multiple cells for non-volatile memory de...

First-pass continuous read level calibration

Concurrent programming of multiple cells for non-volatile memory de...

Semiconductor memory device and method with selection transistor pr...

First-pass dynamic program targeting (DPT)

Method of erasing data in nonvolatile memory device, nonvolatile me...

Concurrent programming of multiple cells for non-volatile memory de...

Semiconductor memory device with improved threshold voltage distrib...

Method of erasing data in nonvolatile memory device, nonvolatile me...

Controller and operating method thereof

First-pass continuous read level calibration

Method of erasing data in nonvolatile memory device, nonvolatile me...

First-pass dynamic program targeting (DPT)

Failure prediction by cell probing

Semiconductor memory device with improved program verification reli...

Semiconductor memory device and method of operating the same

Nonvolatile memory device, storage device including nonvolatile mem...

Semiconductor memory device with improved program verification reli...

Apparatuses and methods for non-volatile memory programming schemes

Flash memory read performance

Flash memory read performance

Partial block data programming and reading operations in a non-vola...

Partial block data programming and reading operations in a non-vola...

Partial block data programming and reading operations in a non-vola...

Flash memory with improved programming precision

Flash storage system with write-erase abort detection mechanism

Method of improving programming precision in flash memory

Patents Applicationslast 30 patents

FIRST-PASS CONTINUOUS READ LEVEL CALIBRATION

PEAK AND AVERAGE ICC REDUCTION BY TIER-BASED SENSING DURING PROGRAM...

CONCURRENT PROGRAMMING OF MULTIPLE CELLS FOR NON-VOLATILE MEMORY DE...

FIRST-PASS DYNAMIC PROGRAM TARGETING (DPT)

CONCURRENT PROGRAMMING OF MULTIPLE CELLS FOR NON-VOLATILE MEMORY DE...

SEMICONDUCTOR MEMORY DEVICE WITH IMPROVED THRESHOLD VOLTAGE DISTRIB...

FIRST-PASS DYNAMIC PROGRAM TARGETING (DPT)

FIRST-PASS CONTINUOUS READ LEVEL CALIBRATION

FIRST-PASS DYNAMIC PROGRAM TARGETING (DPT)

FIRST-PASS CONTINUOUS READ LEVEL CALIBRATION

CONCURRENT PROGRAMMING OF MULTIPLE CELLS FOR NON-VOLATILE MEMORY DE...

SEMICONDUCTOR MEMORY DEVICE WITH IMPROVED PROGRAM VERIFICATION RELI...

METHOD OF ERASING DATA IN NONVOLATILE MEMORY DEVICE, NONVOLATILE ME...

CONTROLLER AND OPERATING METHOD THEREOF

Multi-Host Intelligent Block Level Provisioning

SEMICONDUCTOR MEMORY DEVICE WITH IMPROVED PROGRAM VERIFICATION RELI...

NONVOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING NONVOLATILE MEM...

Partial Block Data Programming And Reading Operations In A Non-Vola...

Partial Block Data Programming And Reading Operations In A Non-Vola...

Partial Block Data Programming And Reading Operations In A Non-Vola...

Flash Memory With Improved Programming Precision

Method Of Improving Programming Precision In Flash Memory

Flash Storage System with Write-Erase Abort Detection Mechanism

Data write circuit and data write method for semiconductor storage...

Partial block data programming and reading operations in a non-vola...

Non-volatile memory and write method of the same

Flash storage system with write/erase abort detection mechanism

Semiconductor memory device in which source line potential is contr...

Method and system for efficiently reading and programmming of dual...

Partial block data programming and reading operations in a non-vola...