Flat crystals

Industry

CPC
C30B29/64

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Current Industry

C30B29/64Flat crystals

Industries

Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method of single-crystal silicon substrate
- Patent number 12,129,570
- Issue date Oct 29, 2024
- Disco Corporation
- Hayato Iga
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 12,104,278
- Issue date Oct 1, 2024
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Low etch pit density, low slip line density, and low strain indium...
- Patent number 12,054,851
- Issue date Aug 6, 2024
- AXT, Inc.
- Morris Young
- C30 - CRYSTAL GROWTH
Information Patent Grant
High refractive index organic solid crystal with controlled surface...
- Patent number 12,024,793
- Issue date Jul 2, 2024
- Meta Platforms Technologies, LLC
- Tingling Rao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large scale production of oxidized graphene
- Patent number 12,006,220
- Issue date Jun 11, 2024
- NanoXplore Inc.
- Marie Bozalina
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for synthesizing intergrown twin Ni2Mo6S6O2/MoS2 two-dimensi...
- Patent number 11,946,161
- Issue date Apr 2, 2024
- Institute of Analysis, Guangdong Academy of Sciences (China National Analytic...
- Fuxian Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Producing a ribbon or wafer with regions of low oxygen concentration
- Patent number 11,885,036
- Issue date Jan 30, 2024
- Jesse S. Appel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single crystal substrate
- Patent number 11,781,246
- Issue date Oct 10, 2023
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for manufacturing hexagonal semiconductor plate crystal
- Patent number 11,772,301
- Issue date Oct 3, 2023
- Mitsubishi Chemical Corporation
- Hirofumi Uchida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing large-size two-dimensional layered metal thiop...
- Patent number 11,761,112
- Issue date Sep 19, 2023
- EAST CHINA JIAOTONG UNIVERSITY
- Ziqiang Cheng
- C30 - CRYSTAL GROWTH
Information Patent Grant
3-dimensional nor string arrays in segmented stacks
- Patent number 11,730,000
- Issue date Aug 15, 2023
- SUNRISE MEMORY CORPORATION
- Eli Harari
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon ingot, silicon block, silicon substrate, method for manufac...
- Patent number 11,713,515
- Issue date Aug 1, 2023
- Kyocera Corporation
- Hideyoshi Tanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Three-dimensionally stretchable single crystalline semiconductor me...
- Patent number 11,697,889
- Issue date Jul 11, 2023
- International Business Machines Corporation
- Alexander Reznicek
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for manufacturing two-dimensional material using top-down me...
- Patent number 11,691,880
- Issue date Jul 4, 2023
- Ajou University Industry-Academic Cooperation Foundation
- Jaehyun Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low etch pit density, low slip line density, and low strain indium...
- Patent number 11,608,569
- Issue date Mar 21, 2023
- AXT, Inc.
- Morris Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and setup for growing bulk single crystals
- Patent number 11,591,712
- Issue date Feb 28, 2023
- Forschungsverbund Berlin e.V.
- Christo Guguschev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single crystal substrate
- Patent number 11,535,953
- Issue date Dec 27, 2022
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Large scale production of oxidized graphene
- Patent number 11,407,643
- Issue date Aug 9, 2022
- NanoXplore Inc.
- Marie Bozalina
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Large scale production of thinned graphite, graphene, and graphite-...
- Patent number 11,367,540
- Issue date Jun 21, 2022
- NanoXplore Inc.
- Marie Bozalina
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Sapphire ribbon and apparatus for manufacturing single crystal ribbons
- Patent number 11,248,311
- Issue date Feb 15, 2022
- Kyocera Corporation
- Akeo Fukui
- C30 - CRYSTAL GROWTH
Information Patent Grant
Synthetic diamond plates
- Patent number 11,211,306
- Issue date Dec 28, 2021
- Element Six Technologies Limited
- Julian Ellis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3-dimensional NOR string arrays in segmented stacks
- Patent number 11,180,861
- Issue date Nov 23, 2021
- SUNRISE MEMORY CORPORATION
- Eli Harari
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
High-yield preparation of two-dimensional copper nanosheets
- Patent number 11,131,031
- Issue date Sep 28, 2021
- Honda Motor Co., Ltd.
- Shutang Chen
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Grant
Method for preparing ultrathin two-dimensional nanosheets and appli...
- Patent number 11,114,579
- Issue date Sep 7, 2021
- University of Electronic Science and Technology of China
- Jie Xiong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Dielectric materials using 2D nanosheet network interlayer
- Patent number 11,004,606
- Issue date May 11, 2021
- University of Connecticut
- Douglas H. Adamson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Boron nitride and method of producing boron nitride
- Patent number 10,892,094
- Issue date Jan 12, 2021
- Board of Trustees of Northern Illinois University
- Narayan S. Hosmane
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon carbide single crystal substrate and method for manufacturi...
- Patent number 10,872,759
- Issue date Dec 22, 2020
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride substrate
- Patent number 10,837,124
- Issue date Nov 17, 2020
- Sumitomo Electric Industries, Ltd.
- Makoto Kiyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for limiting growth of KDP-type crystals with a long seed
- Patent number 10,822,715
- Issue date Nov 3, 2020
- Shanghai Institute of Optics And Fine Mechanics, Chinese Academy of Sciences
- Hongji Qi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Float zone silicon wafer manufacturing system and related process
- Patent number 10,811,245
- Issue date Oct 20, 2020
- Rayton Solar Inc.
- Andrew X. Yakub
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...
- Publication number 20240384436
- Publication date Nov 21, 2024
- AXT, Inc.
- Morris Young
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR SCALABLE FABRICATION OF ULTRAFLAT POLYCRYSTALLINE DIAMON...
- Publication number 20240384433
- Publication date Nov 21, 2024
- The University of Hong Kong
- Zhiqin CHU
- C30 - CRYSTAL GROWTH
Information Patent Application
Thin Plate-Shaped Single-Crystal Production Equipment and Thin Plat...
- Publication number 20240352614
- Publication date Oct 24, 2024
- Crystal Systems Corporation
- Isamu Shindo
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL SILICON CARBIDE WAFER, AND SINGLE-CRYSTAL SILICON CA...
- Publication number 20240344237
- Publication date Oct 17, 2024
- Central Glass Company, Limited
- Tomonori UMEZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPARTMENTALIZED SUMP AND GAS FLOW SYSTEM FOR SILICON RIBBON PRODU...
- Publication number 20240229294
- Publication date Jul 11, 2024
- LEADING EDGE CRYSTAL TECHNOLOGIES, INC.
- Nathan STODDARD
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON INGOT, SILICON BLOCK, SILICON SUBSTRATE, METHOD FOR MANUFAC...
- Publication number 20240026568
- Publication date Jan 25, 2024
- Kyocera Corporation
- Hideyoshi TANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR SYNTHESIZING INTERGROWN TWIN Ni2Mo6S6O2/MoS2 TWO-DIMENSI...
- Publication number 20230227999
- Publication date Jul 20, 2023
- INSTITUTE OF ANALYSIS, GUANGDONG ACADEMY OF SCIENCES (CHINA NATIONAL ANALYTIC...
- Fuxian WANG
- B82 - NANO-TECHNOLOGY
Information Patent Application
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...
- Publication number 20230212784
- Publication date Jul 6, 2023
- AXT, Inc.
- Morris Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING LARGE-SIZE TWO-DIMENSIONAL LAYERED METAL THIOP...
- Publication number 20230160091
- Publication date May 25, 2023
- East China Jiaotong University
- Ziqiang CHENG
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20230081506
- Publication date Mar 16, 2023
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE SCALE PRODUCTION OF OXIDIZED GRAPHENE
- Publication number 20230062310
- Publication date Mar 2, 2023
- NanoXplore Inc.
- Marie BOZALINA
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF SINGLE-CRYSTAL SILICON SUBSTRATE
- Publication number 20230054939
- Publication date Feb 23, 2023
- Disco Corporation
- Hayato IGA
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH REFRACTIVE INDEX ORGANIC SOLID CRYSTAL WITH CONTROLLED SURFACE...
- Publication number 20230037175
- Publication date Feb 2, 2023
- Meta Platforms Technologies, LLC
- Tingling Rao
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE SCALE PRODUCTION OF THINNED GRAPHITE, GRAPHENE, AND GRAPHITE-...
- Publication number 20230005638
- Publication date Jan 5, 2023
- NanoXplore Inc.
- Marie BOZALINA
- B82 - NANO-TECHNOLOGY
Information Patent Application
PRODUCING A RIBBON OR WAFER WITH REGIONS OF LOW OXYGEN CONCENTRATION
- Publication number 20220316087
- Publication date Oct 6, 2022
- Leading Edge Equipment Technologies, Inc.
- Alison Greenlee
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE SCALE PRODUCTION OF OXIDIZED GRAPHENE
- Publication number 20220194799
- Publication date Jun 23, 2022
- NanoXplore Inc.
- Marie BOZALINA
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR CLONAL-GROWTH OF SINGLE-CRYSTAL METAL
- Publication number 20220136134
- Publication date May 5, 2022
- Peking University
- Kaihui Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
SYNTHETIC DIAMOND PLATES
- Publication number 20220122900
- Publication date Apr 21, 2022
- ELEMENT SIX TECHNOLOGIES LIMITED
- JULIAN ELLIS
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING TWO-DIMENSIONAL MATERIAL USING TOP-DOWN ME...
- Publication number 20220033265
- Publication date Feb 3, 2022
- Ajou University Industry-Academic Cooperation Foundation
- Jaehyun LEE
- B82 - NANO-TECHNOLOGY
Information Patent Application
3-DIMENSIONAL NOR STRING ARRAYS IN SEGMENTED STACKS
- Publication number 20220025532
- Publication date Jan 27, 2022
- SUNRISE MEMORY CORPORATION
- Eli Harari
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SILICON INGOT, SILICON BLOCK, SILICON SUBSTRATE, METHOD FOR MANUFAC...
- Publication number 20210277537
- Publication date Sep 9, 2021
- KYOCERA CORPORATION
- Hideyoshi TANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...
- Publication number 20210269939
- Publication date Sep 2, 2021
- AXT, Inc.
- Morris Young
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING HEXAGONAL SEMICONDUCTOR PLATE CRYSTAL
- Publication number 20210146575
- Publication date May 20, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Hirofumi UCHIDA
- B24 - GRINDING POLISHING
Information Patent Application
SYNTHETIC DIAMOND PLATES
- Publication number 20210118766
- Publication date Apr 22, 2021
- ELEMENT SIX TECHNOLOGIES LIMITED
- JULIAN ELLIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING ULTRATHIN TWO-DIMENSIONAL NANOSHEETS AND APPLI...
- Publication number 20200403111
- Publication date Dec 24, 2020
- University of Electronic Science and Technology of China
- Jie XIONG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
3-Dimensional NOR String Arrays in Segmented Stacks
- Publication number 20200318248
- Publication date Oct 8, 2020
- SUNRISE MEMORY CORPORATION
- Eli Harari
- C07 - ORGANIC CHEMISTRY
Information Patent Application
SAPPHIRE RIBBON AND APPARATUS FOR MANUFACTURING SINGLE CRYSTAL RIBBONS
- Publication number 20200308726
- Publication date Oct 1, 2020
- Kyocera Corporation
- Akeo FUKUI
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE SCALE PRODUCTION OF OXIDIZED GRAPHENE
- Publication number 20200207626
- Publication date Jul 2, 2020
- NanoXplore Inc.
- Marie BOZALINA
- B82 - NANO-TECHNOLOGY
Information Patent Application
THREE-DIMENSIONALLY STRETCHABLE SINGLE CRYSTALLINE SEMICONDUCTOR ME...
- Publication number 20200123677
- Publication date Apr 23, 2020
- International Business Machines Corporation
- Alexander Reznicek
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SUBSTRATE
- Publication number 20200032419
- Publication date Jan 30, 2020
- Sumitomo Electric Industries, Ltd.
- Makoto KIYAMA
- C30 - CRYSTAL GROWTH

Flat crystals

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Manufacturing method of single-crystal silicon substrate

Silicon carbide substrate

Low etch pit density, low slip line density, and low strain indium...

High refractive index organic solid crystal with controlled surface...

Large scale production of oxidized graphene

Method for synthesizing intergrown twin Ni2Mo6S6O2/MoS2 two-dimensi...

Producing a ribbon or wafer with regions of low oxygen concentration

Silicon carbide single crystal substrate

Method for manufacturing hexagonal semiconductor plate crystal

Method for preparing large-size two-dimensional layered metal thiop...

3-dimensional nor string arrays in segmented stacks

Silicon ingot, silicon block, silicon substrate, method for manufac...

Three-dimensionally stretchable single crystalline semiconductor me...

Method for manufacturing two-dimensional material using top-down me...

Low etch pit density, low slip line density, and low strain indium...

Method and setup for growing bulk single crystals

Silicon carbide single crystal substrate

Large scale production of oxidized graphene

Large scale production of thinned graphite, graphene, and graphite-...

Sapphire ribbon and apparatus for manufacturing single crystal ribbons

Synthetic diamond plates

3-dimensional NOR string arrays in segmented stacks

High-yield preparation of two-dimensional copper nanosheets

Method for preparing ultrathin two-dimensional nanosheets and appli...

Dielectric materials using 2D nanosheet network interlayer

Boron nitride and method of producing boron nitride

Silicon carbide single crystal substrate and method for manufacturi...

Gallium nitride substrate

Method for limiting growth of KDP-type crystals with a long seed

Float zone silicon wafer manufacturing system and related process

Patents Applicationslast 30 patents

LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...

METHOD FOR SCALABLE FABRICATION OF ULTRAFLAT POLYCRYSTALLINE DIAMON...

Thin Plate-Shaped Single-Crystal Production Equipment and Thin Plat...

SINGLE-CRYSTAL SILICON CARBIDE WAFER, AND SINGLE-CRYSTAL SILICON CA...

COMPARTMENTALIZED SUMP AND GAS FLOW SYSTEM FOR SILICON RIBBON PRODU...

SILICON INGOT, SILICON BLOCK, SILICON SUBSTRATE, METHOD FOR MANUFAC...

METHOD FOR SYNTHESIZING INTERGROWN TWIN Ni2Mo6S6O2/MoS2 TWO-DIMENSI...

LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...

METHOD FOR PREPARING LARGE-SIZE TWO-DIMENSIONAL LAYERED METAL THIOP...

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

LARGE SCALE PRODUCTION OF OXIDIZED GRAPHENE

MANUFACTURING METHOD OF SINGLE-CRYSTAL SILICON SUBSTRATE

HIGH REFRACTIVE INDEX ORGANIC SOLID CRYSTAL WITH CONTROLLED SURFACE...

LARGE SCALE PRODUCTION OF THINNED GRAPHITE, GRAPHENE, AND GRAPHITE-...

PRODUCING A RIBBON OR WAFER WITH REGIONS OF LOW OXYGEN CONCENTRATION

LARGE SCALE PRODUCTION OF OXIDIZED GRAPHENE

METHOD FOR CLONAL-GROWTH OF SINGLE-CRYSTAL METAL

SYNTHETIC DIAMOND PLATES

METHOD FOR MANUFACTURING TWO-DIMENSIONAL MATERIAL USING TOP-DOWN ME...

3-DIMENSIONAL NOR STRING ARRAYS IN SEGMENTED STACKS

SILICON INGOT, SILICON BLOCK, SILICON SUBSTRATE, METHOD FOR MANUFAC...

LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...

METHOD FOR MANUFACTURING HEXAGONAL SEMICONDUCTOR PLATE CRYSTAL

SYNTHETIC DIAMOND PLATES

METHOD FOR PREPARING ULTRATHIN TWO-DIMENSIONAL NANOSHEETS AND APPLI...

3-Dimensional NOR String Arrays in Segmented Stacks

SAPPHIRE RIBBON AND APPARATUS FOR MANUFACTURING SINGLE CRYSTAL RIBBONS

LARGE SCALE PRODUCTION OF OXIDIZED GRAPHENE

THREE-DIMENSIONALLY STRETCHABLE SINGLE CRYSTALLINE SEMICONDUCTOR ME...

GALLIUM NITRIDE SUBSTRATE