Floating gate memory cells with a single polysilicon layer

Industry

CPC
G11C2216/10

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C2216/00Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups

Current Industry

G11C2216/10Floating gate memory cells with a single polysilicon layer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a three-gate non-volatile flash memory cell using...
- Patent number 11,652,162
- Issue date May 16, 2023
- Silicon Storage Technology, Inc.
- Feng Zhou
- G11 - INFORMATION STORAGE
Information Patent Grant
Single poly non-volatile memory device, method of manufacturing the...
- Patent number 11,127,749
- Issue date Sep 21, 2021
- KEY FOUNDRY CO., LTD.
- Su Jin Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Single poly non-volatile memory device, method of manufacturing the...
- Patent number 10,950,614
- Issue date Mar 16, 2021
- KEY FOUNDRY CO., LTD.
- Su Jin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single poly multi time program cell and method of operating the same
- Patent number 10,867,677
- Issue date Dec 15, 2020
- KEY FOUNDRY CO., LTD.
- Su Jin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single poly non-volatile memory device, method of manufacturing the...
- Patent number 10,833,095
- Issue date Nov 10, 2020
- MagnaChip Semiconductor, Ltd.
- Su Jin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-poly nonvolatile memory unit
- Patent number 10,797,063
- Issue date Oct 6, 2020
- eMemory Technology Inc.
- Hsueh-Wei Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with a flat-topped floating gate structure
- Patent number 10,700,077
- Issue date Jun 30, 2020
- Microchip Technology Incorporated
- Mel Hymas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate OTP/MTP structure and method for producing the same
- Patent number 10,332,597
- Issue date Jun 25, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming pairs of three-gate non-volatile flash memory cel...
- Patent number 10,217,850
- Issue date Feb 26, 2019
- Silicon Storage Technology, Inc.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Erasable programmable non-volatile memory
- Patent number 10,115,682
- Issue date Oct 30, 2018
- eMemory Technology Inc.
- Chun-Hsiao Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor apparatus with fake functionality
- Patent number 10,090,260
- Issue date Oct 2, 2018
- Ememory Technology Inc.
- Hsin-Ming Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Random number generator device and control method thereof
- Patent number 10,020,268
- Issue date Jul 10, 2018
- eMemory Technology Inc.
- Wei-Zhe Wong
- G11 - INFORMATION STORAGE
Information Patent Grant
Single poly nonvolatile memory cells, arrays thereof, and methods o...
- Patent number 9,935,117
- Issue date Apr 3, 2018
- SK Hynix Inc.
- Nam Yoon Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory hole bit line structures
- Patent number 9,922,709
- Issue date Mar 20, 2018
- SanDisk Technologies LLC
- Perumal Ratnam
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory for high rewrite cycles application
- Patent number 9,666,279
- Issue date May 30, 2017
- eMemory Technology Inc.
- Wen-Hao Ching
- G11 - INFORMATION STORAGE
Information Patent Grant
Single-poly nonvolatile memory cell
- Patent number 9,640,259
- Issue date May 2, 2017
- eMemory Technology Inc.
- Yi-Hung Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory for high rewrite cycles application
- Patent number 9,633,729
- Issue date Apr 25, 2017
- eMemory Technology Inc.
- Wen-Hao Ching
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory unit with voltage passing device
- Patent number 9,524,785
- Issue date Dec 20, 2016
- eMemory Technology Inc.
- Chih-Hsin Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Intrinsic vertical bit line architecture
- Patent number 9,484,092
- Issue date Nov 1, 2016
- SanDisk Technologies LLC
- Perumal Ratnam
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling adjustable resistance bit lines connected to word line...
- Patent number 9,484,093
- Issue date Nov 1, 2016
- SanDisk Technologies LLC
- Perumal Ratnam
- G11 - INFORMATION STORAGE
Information Patent Grant
Setting channel voltages of adjustable resistance bit line structur...
- Patent number 9,455,301
- Issue date Sep 27, 2016
- SanDisk Technologies LLC
- Perumal Ratnam
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory for high rewrite cycles application
- Patent number 9,425,204
- Issue date Aug 23, 2016
- eMemory Technology Inc.
- Wen-Hao Ching
- G11 - INFORMATION STORAGE
Information Patent Grant
Side wall bit line structures
- Patent number 9,373,396
- Issue date Jun 21, 2016
- SanDisk Technologies Inc.
- Perumal Ratnam
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit with trimming
- Patent number 9,331,086
- Issue date May 3, 2016
- NXP B.V.
- Wibo D. Van Noort
- G11 - INFORMATION STORAGE
Information Patent Grant
Serial-parallel interface circuit with nonvolatile memory
- Patent number 9,298,653
- Issue date Mar 29, 2016
- National Taiwan University of Science and Technology
- Sheng-Yu Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory structure and fabrication method thereof
- Patent number 9,236,453
- Issue date Jan 12, 2016
- eMemory Technology Inc.
- Yi-Hung Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory (NVM) and method for manufacturing thereof
- Patent number 9,171,621
- Issue date Oct 27, 2015
- Electronics and Telecommunications Research Institute
- Kun Sik Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell
- Patent number 9,042,174
- Issue date May 26, 2015
- eMemory Technology Inc.
- Wen-Hao Ching
- G11 - INFORMATION STORAGE
Information Patent Grant
N-channel multi-time programmable memory devices
- Patent number 8,975,685
- Issue date Mar 10, 2015
- Maxim Integrated Products, Inc.
- Yi He
- G11 - INFORMATION STORAGE
Information Patent Grant
Logic-based multiple time programming memory cell compatible with g...
- Patent number 8,958,245
- Issue date Feb 17, 2015
- eMemory Technology Inc.
- Te-Hsun Hsu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING PAIRS OF THREE-GATE NON-VOLATILE FLASH MEMORY CEL...
- Publication number 20230238453
- Publication date Jul 27, 2023
- Silicon Storage Technology, Inc.
- Feng Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
CELL STRUCTURE AND OPERATION OF SELF-ALIGNED PMOS FLASH MEMORY
- Publication number 20210225856
- Publication date Jul 22, 2021
- Cloudwalk Technology Corp.
- Xi ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE POLY NON-VOLATILE MEMORY DEVICE, METHOD OF MANUFACTURING THE...
- Publication number 20210082938
- Publication date Mar 18, 2021
- KEY FOUNDRY CO., LTD.
- Su Jin KIM
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FORMING PAIRS OF THREE-GATE NON-VOLATILE FLASH MEMORY CEL...
- Publication number 20200411673
- Publication date Dec 31, 2020
- Silicon Storage Technology, Inc.
- Feng Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
SINGLE POLY NON-VOLATILE MEMORY DEVICE, METHOD OF MANUFACTURING THE...
- Publication number 20200381445
- Publication date Dec 3, 2020
- Magnachip Semiconductor, Ltd.
- Su Jin KIM
- G11 - INFORMATION STORAGE
Information Patent Application
Method Of Forming Pairs Of Three-Gate Non-volatile Flash Memory Cel...
- Publication number 20190148529
- Publication date May 16, 2019
- Silicon Storage Technology, Inc.
- Feng Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
FLOATING GATE OTP/MTP STRUCTURE AND METHOD FOR PRODUCING THE SAME
- Publication number 20190139607
- Publication date May 9, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng TAN
- G11 - INFORMATION STORAGE
Information Patent Application
OPERATION MODES FOR ADJUSTABLE RESISTANCE BIT LINE STRUCTURES
- Publication number 20160019960
- Publication date Jan 21, 2016
- SanDisk 3D LLC
- Perumal Ratnam
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY CELL
- Publication number 20140177338
- Publication date Jun 26, 2014
- EMEMORY TECHNOLOGY INC.
- Wen-Hao Ching
- G11 - INFORMATION STORAGE
Information Patent Application
N-Channel Multi-Time Programmable Memory Devices
- Publication number 20140063958
- Publication date Mar 6, 2014
- Maxim Integrated Products, Inc.
- Yi He
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY (NVM) AND METHOD FOR MANUFACTURING THEREOF
- Publication number 20130294172
- Publication date Nov 7, 2013
- Kun Sik PARK
- G11 - INFORMATION STORAGE
Information Patent Application
ERASABLE PROGRAMMABLE SINGLE-PLOY NONVOLATILE MEMORY
- Publication number 20130248973
- Publication date Sep 26, 2013
- EMEMORY TECHNOLOGY INC.
- Wei-Ren Chen
- G11 - INFORMATION STORAGE
Information Patent Application
ERASABLE PROGRAMMABLE SINGLE-PLOY NONVOLATILE MEMORY
- Publication number 20130234228
- Publication date Sep 12, 2013
- EMEMORY TECHNOLOGY INC.
- Te-Hsun Hsu
- G11 - INFORMATION STORAGE
Information Patent Application
SINGLE POLY EEPROM AND METHOD FOR FABRICATING THE SAME
- Publication number 20130168755
- Publication date Jul 4, 2013
- DONGBU HITEK CO., LTD.
- Hangeon KIM
- G11 - INFORMATION STORAGE
Information Patent Application
Electronic Device Including a Tunnel Structure
- Publication number 20130161723
- Publication date Jun 27, 2013
- Thierry Coffi Herve Yao
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF OPERATING INTEGRATED CIRCUIT EMBEDDED WITH NON-VOLATILE P...
- Publication number 20130128674
- Publication date May 23, 2013
- Invensas Corporation
- David K.Y. Liu
- G11 - INFORMATION STORAGE
Information Patent Application
LOW LEAKAGE CAPACITOR FOR ANALOG FLOATING-GATE INTEGRATED CIRCUITS
- Publication number 20130130450
- Publication date May 23, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Imran Mahmood Khan
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE ONE-TIME-PROGRAMMABLE AND MULTIPLE-TIME PROGRAMMABLE M...
- Publication number 20130120023
- Publication date May 16, 2013
- Invensas Corporation
- David K.Y. Liu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130113030
- Publication date May 9, 2013
- RENESAS ELECTRONICS CORPORATION
- Yasuhiro TANIGUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
COMPOSITIONS AND METHODS FOR ENHANCING CORTICOSTEROID DELIVERY
- Publication number 20120289490
- Publication date Nov 15, 2012
- MEDICIS PHARMACEUTICAL CORPORATION
- Eugene H. Gans
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
Low Leakage Capacitor for Analog Floating-Gate Integrated Circuits
- Publication number 20120241829
- Publication date Sep 27, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Imran Mahmood Khan
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY CELL
- Publication number 20120236646
- Publication date Sep 20, 2012
- Te-Hsun Hsu
- G11 - INFORMATION STORAGE
Information Patent Application
Logic-Based Multiple Time Programming Memory Cell
- Publication number 20120236635
- Publication date Sep 20, 2012
- Wen-Hao Ching
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
- Publication number 20120156842
- Publication date Jun 21, 2012
- Jin Hyo JUNG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120155176
- Publication date Jun 21, 2012
- Jin Hyo JUNG
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE ONE-TIME-PROGRAMMABLE AND MULTIPLE-TIME PROGRAMMABLE M...
- Publication number 20120140564
- Publication date Jun 7, 2012
- Invensas Corporation
- David K.Y. Liu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
PFET Nonvolatile Memory
- Publication number 20120099380
- Publication date Apr 26, 2012
- Synopsys, Inc.
- Alberto Pesavento
- G11 - INFORMATION STORAGE
Information Patent Application
Non-Volatile Memory System with Modified Memory Cells
- Publication number 20120056257
- Publication date Mar 8, 2012
- MoSys, Inc.
- Jeong Y. Choi
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICE INCLUDING A TUNNEL STRUCTURE
- Publication number 20110316067
- Publication date Dec 29, 2011
- Thierry Coffi Herve Yao
- G11 - INFORMATION STORAGE
Information Patent Application
Logic-Based Multiple Time Programming Memory Cell
- Publication number 20110310669
- Publication date Dec 22, 2011
- Wen-Hao Ching
- G11 - INFORMATION STORAGE

Floating gate memory cells with a single polysilicon layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of forming a three-gate non-volatile flash memory cell using...

Single poly non-volatile memory device, method of manufacturing the...

Single poly non-volatile memory device, method of manufacturing the...

Single poly multi time program cell and method of operating the same

Single poly non-volatile memory device, method of manufacturing the...

Single-poly nonvolatile memory unit

Memory cell with a flat-topped floating gate structure

Floating gate OTP/MTP structure and method for producing the same

Method of forming pairs of three-gate non-volatile flash memory cel...

Erasable programmable non-volatile memory

Semiconductor apparatus with fake functionality

Random number generator device and control method thereof

Single poly nonvolatile memory cells, arrays thereof, and methods o...

Memory hole bit line structures

Non-volatile memory for high rewrite cycles application

Single-poly nonvolatile memory cell

Non-volatile memory for high rewrite cycles application

Memory unit with voltage passing device

Intrinsic vertical bit line architecture

Controlling adjustable resistance bit lines connected to word line...

Setting channel voltages of adjustable resistance bit line structur...

Non-volatile memory for high rewrite cycles application

Side wall bit line structures

Integrated circuit with trimming

Serial-parallel interface circuit with nonvolatile memory

Nonvolatile memory structure and fabrication method thereof

Non-volatile memory (NVM) and method for manufacturing thereof

Non-volatile memory cell

N-channel multi-time programmable memory devices

Logic-based multiple time programming memory cell compatible with g...

Patents Applicationslast 30 patents

METHOD OF FORMING PAIRS OF THREE-GATE NON-VOLATILE FLASH MEMORY CEL...

CELL STRUCTURE AND OPERATION OF SELF-ALIGNED PMOS FLASH MEMORY

SINGLE POLY NON-VOLATILE MEMORY DEVICE, METHOD OF MANUFACTURING THE...

METHOD OF FORMING PAIRS OF THREE-GATE NON-VOLATILE FLASH MEMORY CEL...

SINGLE POLY NON-VOLATILE MEMORY DEVICE, METHOD OF MANUFACTURING THE...

Method Of Forming Pairs Of Three-Gate Non-volatile Flash Memory Cel...

FLOATING GATE OTP/MTP STRUCTURE AND METHOD FOR PRODUCING THE SAME

OPERATION MODES FOR ADJUSTABLE RESISTANCE BIT LINE STRUCTURES

NON-VOLATILE MEMORY CELL

N-Channel Multi-Time Programmable Memory Devices

NON-VOLATILE MEMORY (NVM) AND METHOD FOR MANUFACTURING THEREOF

ERASABLE PROGRAMMABLE SINGLE-PLOY NONVOLATILE MEMORY

ERASABLE PROGRAMMABLE SINGLE-PLOY NONVOLATILE MEMORY

SINGLE POLY EEPROM AND METHOD FOR FABRICATING THE SAME

Electronic Device Including a Tunnel Structure

METHOD OF OPERATING INTEGRATED CIRCUIT EMBEDDED WITH NON-VOLATILE P...

LOW LEAKAGE CAPACITOR FOR ANALOG FLOATING-GATE INTEGRATED CIRCUITS

NON-VOLATILE ONE-TIME-PROGRAMMABLE AND MULTIPLE-TIME PROGRAMMABLE M...

SEMICONDUCTOR DEVICE

COMPOSITIONS AND METHODS FOR ENHANCING CORTICOSTEROID DELIVERY

Low Leakage Capacitor for Analog Floating-Gate Integrated Circuits

NON-VOLATILE MEMORY CELL

Logic-Based Multiple Time Programming Memory Cell

METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

NON-VOLATILE ONE-TIME-PROGRAMMABLE AND MULTIPLE-TIME PROGRAMMABLE M...

PFET Nonvolatile Memory

Non-Volatile Memory System with Modified Memory Cells

ELECTRONIC DEVICE INCLUDING A TUNNEL STRUCTURE

Logic-Based Multiple Time Programming Memory Cell