Floating gate memory cells with both P and N channel memory transistors, usually sharing a common floating gate

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G11C16/045

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GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/045Floating gate memory cells with both P and N channel memory transistors, usually sharing a common floating gate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Ternary content addressable memory and decision generation method f...
- Patent number 12,211,550
- Issue date Jan 28, 2025
- Macronix International Co., Ltd.
- Po-Hao Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell with single poly, floating gate extending...
- Patent number 12,148,473
- Issue date Nov 19, 2024
- STMICROELECTRONICS INTERNATIONAL N.V.
- Roberto Bregoli
- G11 - INFORMATION STORAGE
Information Patent Grant
3D memory device including shared select gate connections between m...
- Patent number 12,131,782
- Issue date Oct 29, 2024
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Grant
Mixed signal neuromorphic computing with nonvolatile memory devices
- Patent number 12,106,211
- Issue date Oct 1, 2024
- The Regents of the University of California
- Dmitri Strukov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method and apparatus for analog floating gate memory cell
- Patent number 12,100,453
- Issue date Sep 24, 2024
- Nuvoton Technology Corporation
- Bal S. Sandhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and method for on-chip leakage detection and compensation f...
- Patent number 12,087,368
- Issue date Sep 10, 2024
- STMICROELECTRONICS INTERNATIONAL N.V.
- Arpit Vijayvergia
- G11 - INFORMATION STORAGE
Information Patent Grant
Content addressable memory device having electrically floating body...
- Patent number 12,080,349
- Issue date Sep 3, 2024
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Grant
Preventing parasitic current during program operations in memory
- Patent number 12,020,749
- Issue date Jun 25, 2024
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Grant
Erasable programmable single-ploy non-volatile memory cell and asso...
- Patent number 11,980,029
- Issue date May 7, 2024
- eMemory Technology Inc.
- Hsueh-Wei Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell and non-volatile memory cell array
- Patent number 11,972,800
- Issue date Apr 30, 2024
- eMemory Technology Inc.
- Chih-Chun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memories having split-gate memory cells
- Patent number 11,955,180
- Issue date Apr 9, 2024
- Micron Technology, Inc.
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-part programming of memory cells
- Patent number 11,948,644
- Issue date Apr 2, 2024
- Lodestar Licensing Group LLC
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
Ternary content addressable memory and decision generation method f...
- Patent number 11,923,008
- Issue date Mar 5, 2024
- Macronix International Co., Ltd.
- Po-Hao Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Content addressable memory device having electrically floating body...
- Patent number 11,881,264
- Issue date Jan 23, 2024
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Grant
Field-effect transistors and methods of their formation
- Patent number 11,824,096
- Issue date Nov 21, 2023
- Micron Technology, Inc.
- Haitao Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Erasable programmable single-poly non-volatile memory cell and asso...
- Patent number 11,818,887
- Issue date Nov 14, 2023
- eMemory Technology Inc.
- Hsueh-Wei Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Sequential voltage control for a memory device
- Patent number 11,798,634
- Issue date Oct 24, 2023
- Micron Technology, Inc.
- Ki-Jun Nam
- G11 - INFORMATION STORAGE
Information Patent Grant
Voltage generation circuits
- Patent number 11,715,502
- Issue date Aug 1, 2023
- Micron Technology, Inc.
- Agostino Macerola
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Charge pump circuit capable of generating voltages in erasing opera...
- Patent number 11,690,221
- Issue date Jun 27, 2023
- eMemory Technology Inc.
- Wei-Chiang Ong
- G11 - INFORMATION STORAGE
Information Patent Grant
3D memory device including shared select gate connections between m...
- Patent number 11,670,370
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Grant
Content addressable memory device having electrically floating body...
- Patent number 11,594,280
- Issue date Feb 28, 2023
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory device
- Patent number 11,592,987
- Issue date Feb 28, 2023
- Kioxia Corporation
- Takuya Futatsuyama
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Ternary content addressable memory and decision generation method f...
- Patent number 11,587,617
- Issue date Feb 21, 2023
- Macronix International Co., Ltd.
- Po-Hao Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus for determining data states of memory cells
- Patent number 11,568,940
- Issue date Jan 31, 2023
- Micron Technology, Inc.
- Tommaso Vali
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Split-gate memory cells
- Patent number 11,545,220
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device capable of improving erase and program efficiency
- Patent number 11,502,096
- Issue date Nov 15, 2022
- eMemory Technology Inc.
- Chia-Jung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate, 2-bit non-volatile memory cell with erase gate disposed...
- Patent number 11,315,635
- Issue date Apr 26, 2022
- Silicon Storage Technology, Inc.
- Chunming Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Sequential voltage control for a memory device
- Patent number 11,257,549
- Issue date Feb 22, 2022
- Micron Technology, Inc.
- Ki-Jun Nam
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-part programming methods
- Patent number 11,222,699
- Issue date Jan 11, 2022
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Grant
Preventing parasitic current during program operations in memory
- Patent number 11,183,242
- Issue date Nov 23, 2021
- Micron Technology, Inc.
- Daniele Vimercati
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...
- Publication number 20250037767
- Publication date Jan 30, 2025
- Lodestar Licensing Group, LLC
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT AND METHOD FOR ON-CHIP LEAKAGE DETECTION AND COMPENSATION F...
- Publication number 20250029664
- Publication date Jan 23, 2025
- STMicroelectronics International N.V.
- Arpit VIJAYVERGIA
- G11 - INFORMATION STORAGE
Information Patent Application
Content Addressable Memory Device Having Electrically Floating Body...
- Publication number 20240395323
- Publication date Nov 28, 2024
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Application
Staggered Triggering Controller
- Publication number 20240221845
- Publication date Jul 4, 2024
- ANAFLASH INC.
- Sihwan Kim
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-PART PROGRAMMING OF MEMORY CELLS
- Publication number 20240185923
- Publication date Jun 6, 2024
- Lodestar Licensing Group LLC
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...
- Publication number 20230420049
- Publication date Dec 28, 2023
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY CELL
- Publication number 20230328979
- Publication date Oct 12, 2023
- STMicroelectronics S.r.l
- Roberto Bregoli
- G11 - INFORMATION STORAGE
Information Patent Application
CHALCOGENIDE MEMORY DEVICE COMPOSITIONS
- Publication number 20230270025
- Publication date Aug 24, 2023
- Micron Technology, Inc.
- Dale W. Collins
- C01 - INORGANIC CHEMISTRY
Information Patent Application
NON-VOLATILE MEMORY CELL AND NON-VOLATILE MEMORY CELL ARRAY
- Publication number 20230197156
- Publication date Jun 22, 2023
- EMEMORY TECHNOLOGY INC.
- Chih-Chun Chen
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- Publication number 20230168808
- Publication date Jun 1, 2023
- KIOXIA Corporation
- Takuya FUTATSUYAMA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ERASABLE PROGRAMMABLE SINGLE-PLOY NON-VOLATILE MEMORY CELL AND ASSO...
- Publication number 20230157017
- Publication date May 18, 2023
- EMEMORY TECHNOLOGY INC.
- Hsueh-Wei CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORIES HAVING SPLIT-GATE MEMORY CELLS
- Publication number 20230139591
- Publication date May 4, 2023
- Micron Technology, Inc.
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Application
ERASABLE PROGRAMMABLE SINGLE-POLY NON-VOLATILE MEMORY CELL AND ASSO...
- Publication number 20230119398
- Publication date Apr 20, 2023
- EMEMORY TECHNOLOGY INC.
- Hsueh-Wei CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND APPARATUS FOR ANALOG FLOATING GATE MEMORY CELL
- Publication number 20230111804
- Publication date Apr 13, 2023
- Nuvoton Technology Corporation
- Bal S. Sandhu
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND APPARATUS FOR ANALOG FLOATING GATE MEMORY CELL
- Publication number 20230116512
- Publication date Apr 13, 2023
- Nuvoton Technology Corporation
- Bal S. Sandhu
- G11 - INFORMATION STORAGE
Information Patent Application
SINGLE POLY, FLOATING GATE, FEW TIME PROGRAMMABLE NON-VOLATILE MEMO...
- Publication number 20220319598
- Publication date Oct 6, 2022
- STMicroelectronics S.r.l.
- Roberto Bregoli
- G11 - INFORMATION STORAGE
Information Patent Application
SEQUENTIAL VOLTAGE CONTROL FOR A MEMORY DEVICE
- Publication number 20220246219
- Publication date Aug 4, 2022
- Micron Technology, Inc.
- Ki-Jun Nam
- G11 - INFORMATION STORAGE
Information Patent Application
SPLIT-GATE MEMORY CELLS
- Publication number 20220208268
- Publication date Jun 30, 2022
- Micron Technology, Inc.
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT AND METHOD FOR ON-CHIP LEAKAGE DETECTION AND COMPENSATION F...
- Publication number 20220208279
- Publication date Jun 30, 2022
- STMicroelectronics International N.V.
- Arpit VIJAYVERGIA
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-PART PROGRAMMING OF MEMORY CELLS
- Publication number 20220115071
- Publication date Apr 14, 2022
- Micron Technology, Inc.
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
SPLIT-GATE, 2-BIT NON-VOLATILE MEMORY CELL WITH ERASE GATE DISPOSED...
- Publication number 20220101920
- Publication date Mar 31, 2022
- Silicon Storage Technology, Inc.
- CHUNMING WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING PARASITIC CURRENT DURING PROGRAM OPERATIONS IN MEMORY
- Publication number 20220076748
- Publication date Mar 10, 2022
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Application
3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...
- Publication number 20220051720
- Publication date Feb 17, 2022
- Micron Technology, Inc.
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE CAPABLE OF IMPROVING ERASE AND PROGRAM EFFICIENCY
- Publication number 20220052064
- Publication date Feb 17, 2022
- EMEMORY TECHNOLOGY INC.
- Chia-Jung Hsu
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD-EFFECT TRANSISTORS AND METHODS OF THEIR FORMATION
- Publication number 20210408244
- Publication date Dec 30, 2021
- Micron Technology, Inc.
- Haitao Liu
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS FOR DETERMINING DATA STATES OF MEMORY CELLS
- Publication number 20210383876
- Publication date Dec 9, 2021
- Micron Technology, Inc.
- Tommaso Vali
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PREVENTING PARASITIC CURRENT DURING PROGRAM OPERATIONS IN MEMORY
- Publication number 20210358549
- Publication date Nov 18, 2021
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Application
SEQUENTIAL VOLTAGE CONTROL FOR A MEMORY DEVICE
- Publication number 20210350861
- Publication date Nov 11, 2021
- Micron Technology, Inc.
- Ki-Jun Nam
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED ERASE VOLTAGE PATH FOR MULTIPLE CELL SUBSTRATES IN NONVO...
- Publication number 20210295923
- Publication date Sep 23, 2021
- Conversant Intellectual Property Management Inc.
- Hyoung Seub RHIE
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- Publication number 20210240345
- Publication date Aug 5, 2021
- Toshiba Memory Corporation
- Takuya Futatsuyama
- G06 - COMPUTING CALCULATING COUNTING

Floating gate memory cells with both P and N channel memory transistors, usually sharing a common floating gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Ternary content addressable memory and decision generation method f...

Non-volatile memory cell with single poly, floating gate extending...

3D memory device including shared select gate connections between m...

Mixed signal neuromorphic computing with nonvolatile memory devices

Method and apparatus for analog floating gate memory cell

Circuit and method for on-chip leakage detection and compensation f...

Content addressable memory device having electrically floating body...

Preventing parasitic current during program operations in memory

Erasable programmable single-ploy non-volatile memory cell and asso...

Non-volatile memory cell and non-volatile memory cell array

Memories having split-gate memory cells

Two-part programming of memory cells

Ternary content addressable memory and decision generation method f...

Content addressable memory device having electrically floating body...

Field-effect transistors and methods of their formation

Erasable programmable single-poly non-volatile memory cell and asso...

Sequential voltage control for a memory device

Voltage generation circuits

Charge pump circuit capable of generating voltages in erasing opera...

3D memory device including shared select gate connections between m...

Content addressable memory device having electrically floating body...

Nonvolatile semiconductor memory device

Ternary content addressable memory and decision generation method f...

Apparatus for determining data states of memory cells

Split-gate memory cells

Memory device capable of improving erase and program efficiency

Split-gate, 2-bit non-volatile memory cell with erase gate disposed...

Sequential voltage control for a memory device

Two-part programming methods

Preventing parasitic current during program operations in memory

Patents Applicationslast 30 patents

3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...

CIRCUIT AND METHOD FOR ON-CHIP LEAKAGE DETECTION AND COMPENSATION F...

Content Addressable Memory Device Having Electrically Floating Body...

Staggered Triggering Controller

TWO-PART PROGRAMMING OF MEMORY CELLS

3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...

NON-VOLATILE MEMORY CELL

CHALCOGENIDE MEMORY DEVICE COMPOSITIONS

NON-VOLATILE MEMORY CELL AND NON-VOLATILE MEMORY CELL ARRAY

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

ERASABLE PROGRAMMABLE SINGLE-PLOY NON-VOLATILE MEMORY CELL AND ASSO...

MEMORIES HAVING SPLIT-GATE MEMORY CELLS

ERASABLE PROGRAMMABLE SINGLE-POLY NON-VOLATILE MEMORY CELL AND ASSO...

METHOD AND APPARATUS FOR ANALOG FLOATING GATE MEMORY CELL

METHOD AND APPARATUS FOR ANALOG FLOATING GATE MEMORY CELL

SINGLE POLY, FLOATING GATE, FEW TIME PROGRAMMABLE NON-VOLATILE MEMO...

SEQUENTIAL VOLTAGE CONTROL FOR A MEMORY DEVICE

SPLIT-GATE MEMORY CELLS

CIRCUIT AND METHOD FOR ON-CHIP LEAKAGE DETECTION AND COMPENSATION F...

TWO-PART PROGRAMMING OF MEMORY CELLS

SPLIT-GATE, 2-BIT NON-VOLATILE MEMORY CELL WITH ERASE GATE DISPOSED...

PREVENTING PARASITIC CURRENT DURING PROGRAM OPERATIONS IN MEMORY

3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...

MEMORY DEVICE CAPABLE OF IMPROVING ERASE AND PROGRAM EFFICIENCY

FIELD-EFFECT TRANSISTORS AND METHODS OF THEIR FORMATION

APPARATUS FOR DETERMINING DATA STATES OF MEMORY CELLS

PREVENTING PARASITIC CURRENT DURING PROGRAM OPERATIONS IN MEMORY

SEQUENTIAL VOLTAGE CONTROL FOR A MEMORY DEVICE

INTEGRATED ERASE VOLTAGE PATH FOR MULTIPLE CELL SUBSTRATES IN NONVO...

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE