for applying nanostructures

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H01F41/30

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HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties

Current Industry

H01F41/30for applying nanostructures

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 12,167,701
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive stack/structure and methods therefor
- Patent number 12,137,616
- Issue date Nov 5, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Jijun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element including perpendicular enhancement layers...
- Patent number 12,133,471
- Issue date Oct 29, 2024
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Self-insulating metal vias in magnetic micro-devices
- Patent number 12,094,629
- Issue date Sep 17, 2024
- National Technology & Engineering Solutions of Sandia, LLC
- Eric Langlois
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication methods for electronic devices integrating magnetic nan...
- Patent number 12,002,605
- Issue date Jun 4, 2024
- UChicago Argonne, LLC
- Yuepeng Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin-orbit torque device, method for fabricating a spin-orbit torqu...
- Patent number 11,968,842
- Issue date Apr 23, 2024
- National University of Singapore
- Jingsheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress sensor and manufacturing method therefor
- Patent number 11,959,815
- Issue date Apr 16, 2024
- Murata Manufacturing Co., Ltd.
- Akira Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of capping layer resistance area product for magnetic dev...
- Patent number 11,930,716
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Minimal thickness synthetic antiferromagnetic (SAF) structure with...
- Patent number 11,930,717
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Robert Beach
- G11 - INFORMATION STORAGE
Information Patent Grant
Products and applications for the templated fabrication of material...
- Patent number 11,923,131
- Issue date Mar 5, 2024
- Alexander Baker
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
High retention storage layer using ultra-low RA MgO process in perp...
- Patent number 11,925,125
- Issue date Mar 5, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive sensor and fabrication method for a magnetoresisti...
- Patent number 11,892,526
- Issue date Feb 6, 2024
- Infineon Technologies AG
- Bernhard Endres
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride capping layer for spin torque transfer (STT) magnetoresisti...
- Patent number 11,849,646
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunneling junction with synthetic free layer for SOT-MRAM
- Patent number 11,844,287
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnonic electromagnetic radiation sources with high output power a...
- Patent number 11,817,242
- Issue date Nov 14, 2023
- Wisconsin Alumni Research Foundation
- Jiamian Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 11,805,658
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hui-Hsien Wei
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive sensors and methods for generating closed flux mag...
- Patent number 11,789,097
- Issue date Oct 17, 2023
- Infineon Technologies AG
- Dirk Hammerschmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element incorporating dual perpendicular enhancemen...
- Patent number 11,758,822
- Issue date Sep 12, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Ferrimagnetic Heusler compounds with high spin polarization
- Patent number 11,756,578
- Issue date Sep 12, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Seed layer for multilayer magnetic materials
- Patent number 11,672,182
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory (MRAM) device
- Patent number 11,665,970
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Whan-Kyun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit torque-based switching device and method of fabricating...
- Patent number 11,641,782
- Issue date May 2, 2023
- Korea University Research and Business Foundation
- Young Keun Kim
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Method of manufacturing electroplated cobalt-platinum films on subs...
- Patent number 11,532,433
- Issue date Dec 20, 2022
- University of Florida Research Foundation, Inc.
- David P. Arnold
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Apparatus and method for boosting signal in magnetoelectric spin or...
- Patent number 11,502,188
- Issue date Nov 15, 2022
- Intel Corporation
- Chia-Ching Lin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic sensor with dual TMR films and the method of making the same
- Patent number 11,493,573
- Issue date Nov 8, 2022
- Western Digital Technologies, Inc.
- Chih-Ching Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element having a giant interfacial perpendicular m...
- Patent number 11,450,467
- Issue date Sep 20, 2022
- Yimin Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular spin transfer torque magnetic mechanism
- Patent number 11,437,567
- Issue date Sep 6, 2022
- Intel Corporation
- Justin Brockman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer free magnetic layer structure for spin-based magnetic me...
- Patent number 11,430,942
- Issue date Aug 30, 2022
- Intel Corporation
- Kaan Oguz
- G11 - INFORMATION STORAGE
Information Patent Grant
High sensitivity TMR magnetic sensor
- Patent number 11,428,758
- Issue date Aug 30, 2022
- Western Digital Technologies, Inc.
- Chih-Ching Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction (MTJ) devices with a synthetic antiferroma...
- Patent number 11,430,943
- Issue date Aug 30, 2022
- Intel Corporation
- Kevin O'Brien
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING A PERPENDICULAR SPIN TORQUE OSCILLATOR (PSTO) IN...
- Publication number 20240381780
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Int...
- Publication number 20240379270
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Luc Thomas
- B24 - GRINDING POLISHING
Information Patent Application
TEMPLATED FABRICATION OF MATERIALS USING COLD SPRAY DEPOSITION
- Publication number 20240177927
- Publication date May 30, 2024
- LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
- Alexander Baker
- B22 - CASTING POWDER METALLURGY
Information Patent Application
MAGNETIC BUBBLE MEMORY
- Publication number 20240046960
- Publication date Feb 8, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Claudia FELSER
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Memory Element Including Perpendicular Enhancement Layers...
- Publication number 20230403945
- Publication date Dec 14, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM
- Publication number 20230389448
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20230380182
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hui-Hsien WEI
- B82 - NANO-TECHNOLOGY
Information Patent Application
PROCESS FOR PRODUCING NANOCLUSTERS OF SILICON AND/OR GERMANIUM EXHI...
- Publication number 20230009716
- Publication date Jan 12, 2023
- Centre National de la Recherche Scientifique
- Holger VACH
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...
- Publication number 20220384716
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...
- Publication number 20220376172
- Publication date Nov 24, 2022
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR PRODUCING A PRINTED MAGNETIC FUNCTIONAL ELEMENT, AND PRI...
- Publication number 20220310322
- Publication date Sep 29, 2022
- Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.
- Mykola VINNICHENKO
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Application
MITIGATION OF CONTAMINATION OF ELECTROPLATED COBALT-PLATINUM FILMS...
- Publication number 20220277896
- Publication date Sep 1, 2022
- University of Florida Research Foundation, Inc.
- David P. Arnold
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20220238798
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Large Dzyaloshinskii-Moriya Interaction and Perpendicular Magnetic...
- Publication number 20220199310
- Publication date Jun 23, 2022
- GEORGETOWN UNIVERSITY
- Kai Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT HAVING A GIANT INTERFACIAL PERPENDICULAR M...
- Publication number 20220165470
- Publication date May 26, 2022
- Yimin Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RETENTION STORAGE LAYER USING ULTRA-LOW RA MgO PROCESS IN PERP...
- Publication number 20220149267
- Publication date May 12, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Application
RARE-EARTH ION DOPED THIN FILM TECHNOLOGIES
- Publication number 20220136133
- Publication date May 5, 2022
- The University of Chicago
- Manish SINGH
- C30 - CRYSTAL GROWTH
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20220085102
- Publication date Mar 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hui-Hsien WEI
- B82 - NANO-TECHNOLOGY
Information Patent Application
Seed Layer for Multilayer Magnetic Materials
- Publication number 20210391533
- Publication date Dec 16, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
MEMS SYSTEM
- Publication number 20210380402
- Publication date Dec 9, 2021
- FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG e.V.
- Malte Florian NIEKIEL
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Magnetic Tunneling Junction with Synthetic Free Layer for SOT-MRAM
- Publication number 20210367143
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduction of Capping Layer Resistance Area Product for Magnetic Dev...
- Publication number 20210367146
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DEVICE
- Publication number 20210296577
- Publication date Sep 23, 2021
- Samsung Electronics Co., Ltd.
- Whan-Kyun KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE SENSORS AND METHODS FOR GENERATING CLOSED FLUX MAG...
- Publication number 20210255255
- Publication date Aug 19, 2021
- INFINEON TECHNOLOGIES AG
- Dirk HAMMERSCHMIDT
- G01 - MEASURING TESTING
Information Patent Application
Reduction of Barrier Resistance X Area (RA) Product and Protection...
- Publication number 20210234092
- Publication date Jul 29, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G01 - MEASURING TESTING
Information Patent Application
Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure With...
- Publication number 20210210674
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Robert Beach
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...
- Publication number 20210159399
- Publication date May 27, 2021
- Avalanche Technology, Inc.
- Yiming Huai
- B82 - NANO-TECHNOLOGY
Information Patent Application
SPIN-ORBIT TORQUE-BASED SWITCHING DEVICE AND METHOD OF FABRICATING...
- Publication number 20210119117
- Publication date Apr 22, 2021
- Korea University Research and Business Foundation
- Young Keun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Sensor with Dual TMR Films and the Method of Making the Same
- Publication number 20210063502
- Publication date Mar 4, 2021
- Western Digital Technologies, Inc.
- Chih-Ching HU
- G01 - MEASURING TESTING
Information Patent Application
Magnetic Sensor Array with Dual TMR Film
- Publication number 20210063504
- Publication date Mar 4, 2021
- Western Digital Technologies, Inc.
- Yuankai ZHENG
- G01 - MEASURING TESTING

for applying nanostructures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetic tunnel junction with low defect rate after high temperatur...

Magnetoresistive stack/structure and methods therefor

Magnetic memory element including perpendicular enhancement layers...

Self-insulating metal vias in magnetic micro-devices

Fabrication methods for electronic devices integrating magnetic nan...

Spin-orbit torque device, method for fabricating a spin-orbit torqu...

Stress sensor and manufacturing method therefor

Reduction of capping layer resistance area product for magnetic dev...

Minimal thickness synthetic antiferromagnetic (SAF) structure with...

Products and applications for the templated fabrication of material...

High retention storage layer using ultra-low RA MgO process in perp...

Magnetoresistive sensor and fabrication method for a magnetoresisti...

Nitride capping layer for spin torque transfer (STT) magnetoresisti...

Magnetic tunneling junction with synthetic free layer for SOT-MRAM

Magnonic electromagnetic radiation sources with high output power a...

Magnetic random access memory and manufacturing method thereof

Magnetoresistive sensors and methods for generating closed flux mag...

Magnetic memory element incorporating dual perpendicular enhancemen...

Ferrimagnetic Heusler compounds with high spin polarization

Seed layer for multilayer magnetic materials

Magnetoresistive random access memory (MRAM) device

Spin-orbit torque-based switching device and method of fabricating...

Method of manufacturing electroplated cobalt-platinum films on subs...

Apparatus and method for boosting signal in magnetoelectric spin or...

Magnetic sensor with dual TMR films and the method of making the same

Magnetoresistive element having a giant interfacial perpendicular m...

Perpendicular spin transfer torque magnetic mechanism

Multilayer free magnetic layer structure for spin-based magnetic me...

High sensitivity TMR magnetic sensor

Magnetic tunnel junction (MTJ) devices with a synthetic antiferroma...

Patents Applicationslast 30 patents

METHOD FOR FORMING A PERPENDICULAR SPIN TORQUE OSCILLATOR (PSTO) IN...

Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Int...

TEMPLATED FABRICATION OF MATERIALS USING COLD SPRAY DEPOSITION

MAGNETIC BUBBLE MEMORY

Magnetic Memory Element Including Perpendicular Enhancement Layers...

MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

PROCESS FOR PRODUCING NANOCLUSTERS OF SILICON AND/OR GERMANIUM EXHI...

Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...

Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...

METHOD FOR PRODUCING A PRINTED MAGNETIC FUNCTIONAL ELEMENT, AND PRI...

MITIGATION OF CONTAMINATION OF ELECTROPLATED COBALT-PLATINUM FILMS...

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

Large Dzyaloshinskii-Moriya Interaction and Perpendicular Magnetic...

MAGNETORESISTIVE ELEMENT HAVING A GIANT INTERFACIAL PERPENDICULAR M...

HIGH RETENTION STORAGE LAYER USING ULTRA-LOW RA MgO PROCESS IN PERP...

RARE-EARTH ION DOPED THIN FILM TECHNOLOGIES

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

Seed Layer for Multilayer Magnetic Materials

MEMS SYSTEM

Magnetic Tunneling Junction with Synthetic Free Layer for SOT-MRAM

Reduction of Capping Layer Resistance Area Product for Magnetic Dev...

MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DEVICE

MAGNETORESISTIVE SENSORS AND METHODS FOR GENERATING CLOSED FLUX MAG...

Reduction of Barrier Resistance X Area (RA) Product and Protection...

Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure With...

Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...

SPIN-ORBIT TORQUE-BASED SWITCHING DEVICE AND METHOD OF FABRICATING...

Magnetic Sensor with Dual TMR Films and the Method of Making the Same

Magnetic Sensor Array with Dual TMR Film