for applying spin-exchange-coupled multilayers

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H01F41/302

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HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties

Current Industry

H01F41/302for applying spin-exchange-coupled multilayers

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Magnetic memory element including perpendicular enhancement layers...
- Patent number 12,133,471
- Issue date Oct 29, 2024
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin-orbit torque device, method for fabricating a spin-orbit torqu...
- Patent number 11,968,842
- Issue date Apr 23, 2024
- National University of Singapore
- Jingsheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress sensor and manufacturing method therefor
- Patent number 11,959,815
- Issue date Apr 16, 2024
- Murata Manufacturing Co., Ltd.
- Akira Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride capping layer for spin torque transfer (STT) magnetoresisti...
- Patent number 11,849,646
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunneling junction with synthetic free layer for SOT-MRAM
- Patent number 11,844,287
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnonic electromagnetic radiation sources with high output power a...
- Patent number 11,817,242
- Issue date Nov 14, 2023
- Wisconsin Alumni Research Foundation
- Jiamian Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element incorporating dual perpendicular enhancemen...
- Patent number 11,758,822
- Issue date Sep 12, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Ferrimagnetic Heusler compounds with high spin polarization
- Patent number 11,756,578
- Issue date Sep 12, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit torque-based switching device and method of fabricating...
- Patent number 11,641,782
- Issue date May 2, 2023
- Korea University Research and Business Foundation
- Young Keun Kim
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Apparatus and method for boosting signal in magnetoelectric spin or...
- Patent number 11,502,188
- Issue date Nov 15, 2022
- Intel Corporation
- Chia-Ching Lin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic sensor with dual TMR films and the method of making the same
- Patent number 11,493,573
- Issue date Nov 8, 2022
- Western Digital Technologies, Inc.
- Chih-Ching Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element having a giant interfacial perpendicular m...
- Patent number 11,450,467
- Issue date Sep 20, 2022
- Yimin Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular spin transfer torque magnetic mechanism
- Patent number 11,437,567
- Issue date Sep 6, 2022
- Intel Corporation
- Justin Brockman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High sensitivity TMR magnetic sensor
- Patent number 11,428,758
- Issue date Aug 30, 2022
- Western Digital Technologies, Inc.
- Chih-Ching Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction (MTJ) devices with a synthetic antiferroma...
- Patent number 11,430,943
- Issue date Aug 30, 2022
- Intel Corporation
- Kevin O'Brien
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus for spin injection enhancement and method of making the same
- Patent number 11,417,834
- Issue date Aug 16, 2022
- Purdue Research Foundation
- Shehrin Sayed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride capping layer for spin torque transfer (STT) magnetoresisti...
- Patent number 11,417,835
- Issue date Aug 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element incorporating dual perpendicular enhancemen...
- Patent number 11,417,836
- Issue date Aug 16, 2022
- Avalanche Technology, Inc.
- Yiming Huai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic sensor array with dual TMR film
- Patent number 11,385,305
- Issue date Jul 12, 2022
- Western Digital Technologies, Inc.
- Yuankai Zheng
- G01 - MEASURING TESTING
Information Patent Grant
Spin orbit torque (SOT) memory devices with enhanced tunnel magneto...
- Patent number 11,257,613
- Issue date Feb 22, 2022
- Intel Corporation
- Kaan Oguz
- G11 - INFORMATION STORAGE
Information Patent Grant
Permanent magnet comprising an antiferromagnetic layer and a ferrom...
- Patent number 11,250,979
- Issue date Feb 15, 2022
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Rachid Hida
- G01 - MEASURING TESTING
Information Patent Grant
Multi-layer magnetoelectronic device
- Patent number 11,170,805
- Issue date Nov 9, 2021
- Deutsches Elektronen-Synchrotron DESY
- Kai Schlage
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic stack, multilayer, tunnel junction, memory point and senso...
- Patent number 10,978,234
- Issue date Apr 13, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Jyotirmoy Chatterjee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element incorporating perpendicular enhancement layer
- Patent number 10,910,555
- Issue date Feb 2, 2021
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic memory device
- Patent number 10,892,400
- Issue date Jan 12, 2021
- Samsung Electronics Co., Ltd.
- Eun-sun Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple hard mask patterning to fabricate 20nm and below MRAM devices
- Patent number 10,868,244
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a magnetic structure
- Patent number 10,854,223
- Issue date Dec 1, 2020
- Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- Thomas Lisec
- G01 - MEASURING TESTING
Information Patent Grant
Magnetoresistive device comprising chromium
- Patent number 10,770,213
- Issue date Sep 8, 2020
- Imec VZW
- Johan Swerts
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive random access memory and method for manufacturing...
- Patent number 10,756,256
- Issue date Aug 25, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Meiyin Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing high annealing temperature perpendicular ma...
- Patent number 10,734,574
- Issue date Aug 4, 2020
- Spin Memory, Inc.
- Bartlomiej Adam Kardasz
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Magnetic Memory Element Including Perpendicular Enhancement Layers...
- Publication number 20230403945
- Publication date Dec 14, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM
- Publication number 20230389448
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...
- Publication number 20220384716
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...
- Publication number 20220376172
- Publication date Nov 24, 2022
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTIVE ELEMENT HAVING A GIANT INTERFACIAL PERPENDICULAR M...
- Publication number 20220165470
- Publication date May 26, 2022
- Yimin Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RARE-EARTH ION DOPED THIN FILM TECHNOLOGIES
- Publication number 20220136133
- Publication date May 5, 2022
- The University of Chicago
- Manish SINGH
- C30 - CRYSTAL GROWTH
Information Patent Application
Magnetic Tunneling Junction with Synthetic Free Layer for SOT-MRAM
- Publication number 20210367143
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...
- Publication number 20210159399
- Publication date May 27, 2021
- Avalanche Technology, Inc.
- Yiming Huai
- B82 - NANO-TECHNOLOGY
Information Patent Application
SPIN-ORBIT TORQUE-BASED SWITCHING DEVICE AND METHOD OF FABRICATING...
- Publication number 20210119117
- Publication date Apr 22, 2021
- Korea University Research and Business Foundation
- Young Keun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Sensor with Dual TMR Films and the Method of Making the Same
- Publication number 20210063502
- Publication date Mar 4, 2021
- Western Digital Technologies, Inc.
- Chih-Ching HU
- G01 - MEASURING TESTING
Information Patent Application
Magnetic Sensor Array with Dual TMR Film
- Publication number 20210063504
- Publication date Mar 4, 2021
- Western Digital Technologies, Inc.
- Yuankai ZHENG
- G01 - MEASURING TESTING
Information Patent Application
High Sensitivity TMR Magnetic Sensor
- Publication number 20210063503
- Publication date Mar 4, 2021
- Western Digital Technologies, Inc.
- Chih-Ching HU
- G01 - MEASURING TESTING
Information Patent Application
Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...
- Publication number 20200279993
- Publication date Sep 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERMANENT MAGNET COMPRISING AN ANTIFERROMAGNETIC LAYER AND A FERROM...
- Publication number 20200265984
- Publication date Aug 20, 2020
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Rachid Hida
- G01 - MEASURING TESTING
Information Patent Application
Magnetic Memory Element Incorporating Perpendicular Enhancement Layer
- Publication number 20200227628
- Publication date Jul 16, 2020
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR MANUFACTURING...
- Publication number 20200212293
- Publication date Jul 2, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Meiyin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20200185598
- Publication date Jun 11, 2020
- Samsung Electronics Co., Ltd.
- Eun-sun Noh
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR MRAM FREE LAYER WITH NB OXIDE CONTAINING CAPPING LAYER
- Publication number 20200066969
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Matthias Georg GOTTWALD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple Hard Mask Patterning to Fabricate 20nm and Below MRAM Devices
- Publication number 20200044147
- Publication date Feb 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing High Annealing Temperature Perpendicular Ma...
- Publication number 20200035914
- Publication date Jan 30, 2020
- Spin Memory, Inc.
- Bartlomiej Adam KARDASZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES WITH A SYNTHETIC ANTIFERROMA...
- Publication number 20200006628
- Publication date Jan 2, 2020
- Kevin O'Brien
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHOD FOR BOOSTING SIGNAL IN MAGNETOELECTRIC SPIN OR...
- Publication number 20190386662
- Publication date Dec 19, 2019
- Intel Corporation
- Chia-Ching Lin
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MAGNETORESISTIVE DEVICE COMPRISING CHROMIUM
- Publication number 20190348208
- Publication date Nov 14, 2019
- IMEC vzw
- Johan Swerts
- B82 - NANO-TECHNOLOGY
Information Patent Application
SPIN ORBIT TORQUE (SOT) MEMORY DEVICES WITH ENHANCED TUNNEL MAGNETO...
- Publication number 20190304653
- Publication date Oct 3, 2019
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MAGNETIC MECHANISM
- Publication number 20190280188
- Publication date Sep 12, 2019
- Intel Corporation
- Justin BROCKMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Capping Layer for Spin Torque Transfer (STT)-Magnetoresisti...
- Publication number 20190237661
- Publication date Aug 1, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICE WITH PRECESSIONAL SPI...
- Publication number 20190207088
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Manfred Ernst Schabes
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20190198752
- Publication date Jun 27, 2019
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
PHASE-LOCKED SPIN TORQUE OSCILLATOR ARRAY
- Publication number 20190173428
- Publication date Jun 6, 2019
- Arizona Board of Regents on behalf of Arizona State University
- Richard Arthur KIEHL
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Multiple Hard Mask Patterning to Fabricate 20nm and Below MRAM Devices
- Publication number 20190123267
- Publication date Apr 25, 2019
- HEADWAY TECHNOLOGIES, INC.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS

for applying spin-exchange-coupled multilayers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetic memory element including perpendicular enhancement layers...

Spin-orbit torque device, method for fabricating a spin-orbit torqu...

Stress sensor and manufacturing method therefor

Nitride capping layer for spin torque transfer (STT) magnetoresisti...

Magnetic tunneling junction with synthetic free layer for SOT-MRAM

Magnonic electromagnetic radiation sources with high output power a...

Magnetic memory element incorporating dual perpendicular enhancemen...

Ferrimagnetic Heusler compounds with high spin polarization

Spin-orbit torque-based switching device and method of fabricating...

Apparatus and method for boosting signal in magnetoelectric spin or...

Magnetic sensor with dual TMR films and the method of making the same

Magnetoresistive element having a giant interfacial perpendicular m...

Perpendicular spin transfer torque magnetic mechanism

High sensitivity TMR magnetic sensor

Magnetic tunnel junction (MTJ) devices with a synthetic antiferroma...

Apparatus for spin injection enhancement and method of making the same

Nitride capping layer for spin torque transfer (STT) magnetoresisti...

Magnetic memory element incorporating dual perpendicular enhancemen...

Magnetic sensor array with dual TMR film

Spin orbit torque (SOT) memory devices with enhanced tunnel magneto...

Permanent magnet comprising an antiferromagnetic layer and a ferrom...

Multi-layer magnetoelectronic device

Magnetic stack, multilayer, tunnel junction, memory point and senso...

Magnetic memory element incorporating perpendicular enhancement layer

Magnetic memory device

Multiple hard mask patterning to fabricate 20nm and below MRAM devices

Method of producing a magnetic structure

Magnetoresistive device comprising chromium

Magnetoresistive random access memory and method for manufacturing...

Method of manufacturing high annealing temperature perpendicular ma...

Patents Applicationslast 30 patents

Magnetic Memory Element Including Perpendicular Enhancement Layers...

MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM

Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...

Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...

MAGNETORESISTIVE ELEMENT HAVING A GIANT INTERFACIAL PERPENDICULAR M...

RARE-EARTH ION DOPED THIN FILM TECHNOLOGIES

Magnetic Tunneling Junction with Synthetic Free Layer for SOT-MRAM

Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...

SPIN-ORBIT TORQUE-BASED SWITCHING DEVICE AND METHOD OF FABRICATING...

Magnetic Sensor with Dual TMR Films and the Method of Making the Same

Magnetic Sensor Array with Dual TMR Film

High Sensitivity TMR Magnetic Sensor

Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...

PERMANENT MAGNET COMPRISING AN ANTIFERROMAGNETIC LAYER AND A FERROM...

Magnetic Memory Element Incorporating Perpendicular Enhancement Layer

MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR MANUFACTURING...

MAGNETIC MEMORY DEVICE

PERPENDICULAR MRAM FREE LAYER WITH NB OXIDE CONTAINING CAPPING LAYER

Multiple Hard Mask Patterning to Fabricate 20nm and Below MRAM Devices

Method of Manufacturing High Annealing Temperature Perpendicular Ma...

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES WITH A SYNTHETIC ANTIFERROMA...

APPARATUS AND METHOD FOR BOOSTING SIGNAL IN MAGNETOELECTRIC SPIN OR...

MAGNETORESISTIVE DEVICE COMPRISING CHROMIUM

SPIN ORBIT TORQUE (SOT) MEMORY DEVICES WITH ENHANCED TUNNEL MAGNETO...

PERPENDICULAR SPIN TRANSFER TORQUE MAGNETIC MECHANISM

Nitride Capping Layer for Spin Torque Transfer (STT)-Magnetoresisti...

PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICE WITH PRECESSIONAL SPI...

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

PHASE-LOCKED SPIN TORQUE OSCILLATOR ARRAY

Multiple Hard Mask Patterning to Fabricate 20nm and Below MRAM Devices