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for the formation of PN junctions without addition of impurities
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for the formation of PN junctions without addition of impurities
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Laser anneal process
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10,867,809
Issue date
Dec 15, 2020
Taiwan Semiconductor Manufacturing Co., Ltd
Chun-Ti Lu
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Vertical fin type bipolar junction transistor (BJT) device with a s...
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10,658,495
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May 19, 2020
International Business Machines Corporation
Injo Ok
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Method for manufacturing thin film transistor
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10,297,678
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May 21, 2019
BOE Technology Group Co., Ltd.
Xiaolong Li
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Methods for forming a semiconductor device and a semiconductor device
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10,096,677
Issue date
Oct 9, 2018
Infineon Technologies AG
Moriz Jelinek
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Semiconductor device having a defined oxygen concentration
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10,014,400
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Jul 3, 2018
Infineon Technologies AG
Helmut Oefner
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Silicon carbide semiconductor device and method of manufacturing th...
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9,887,263
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Feb 6, 2018
Sumitomo Electric Industries, Ltd
Toru Hiyoshi
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Method for treating a semiconductor wafer
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9,754,787
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Sep 5, 2017
Infineon Technologies AG
Johannes Laven
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Method for manufacturing a semiconductor wafer, and semiconductor d...
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9,728,395
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Aug 8, 2017
Infineon Technologies AG
Helmut Oefner
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Method of manufacturing semiconductor devices using light ion impla...
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9,634,086
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Apr 25, 2017
Infineon Technologies AG
Moriz Jelinek
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Method for producing a semiconductor
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9,627,209
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Apr 18, 2017
Infineon Technologies AG
Hans-Joachim Schulze
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Semiconductor device with a semiconductor body containing hydrogen-...
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9,564,495
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Feb 7, 2017
Infineon Technologies AG
Johannes Georg Laven
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Method for producing a semiconductor
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9,293,330
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Mar 22, 2016
Infineon Technologies AG
Hans-Joachim Schulze
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Increasing the doping efficiency during proton irradiation
Patent number
9,054,035
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Jun 9, 2015
Infineon Technologies AG
Hans-Joachim Schulze
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Method for producing a semiconductor
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8,946,872
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Feb 3, 2015
Infineon Technologies Austria AG
Anton Mauder
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Method for fabricating a semiconductor having a graded pn junction
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8,741,750
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Jun 3, 2014
Infineon Technologies Austria AG
Frank Hille
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Method for producing a semiconductor
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8,288,258
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Oct 16, 2012
Infineon Technologies Austria AG
Anton Mauder
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Method of fabricating a diode
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8,034,700
Issue date
Oct 11, 2011
Infineon Technologies AG
Hans-Joachim Schulze
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Diode
Patent number
7,838,969
Issue date
Nov 23, 2010
Infineon Technologies AG
Hans-Joachim Schulze
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Method of processing a semiconductor substrate by thermal activatio...
Patent number
7,670,966
Issue date
Mar 2, 2010
Commissariat a l'Energie Atomique
Sébastien Dubois
Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
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Method of making a pn-junction in a semiconductor element
Patent number
6,376,321
Issue date
Apr 23, 2002
Sentron AG
Radivoje Popovic
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Method for making a conductive silicon substrate by heat treatment...
Patent number
4,505,759
Issue date
Mar 19, 1985
William C. O'Mara
H01 - BASIC ELECTRIC ELEMENTS
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HEAT TREATMENT SUSCEPTOR AND HEAT TREATMENT APPARATUS
Publication number
20190393055
Publication date
Dec 26, 2019
SCREEN Holdings Co., Ltd.
Nobuhiko NISHIDE
F27 - FURNACES KILNS OVENS RETORTS
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METHOD OF FORMING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS
Publication number
20190157104
Publication date
May 23, 2019
Taiwan Semiconductor Manufacturing Co., Ltd.
Chun-Ti LU
B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
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Method for Manufacturing Thin Film Transistor
Publication number
20190027587
Publication date
Jan 24, 2019
BOE TECHNOLOGY GROUP CO., LTD.
Xiaolong LI
H01 - BASIC ELECTRIC ELEMENTS
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Semiconductor Device Having a Defined Oxygen Concentration
Publication number
20170316929
Publication date
Nov 2, 2017
INFINEON TECHNOLOGIES AG
Helmut Oefner
H01 - BASIC ELECTRIC ELEMENTS
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HEAT TREATMENT SUSCEPTOR AND HEAT TREATMENT APPARATUS
Publication number
20170221736
Publication date
Aug 3, 2017
SCREEN Holdings Co., Ltd.
Nobuhiko NISHIDE
H01 - BASIC ELECTRIC ELEMENTS
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CONFORMAL DOPING USING DOPANT GAS ON HYDROGEN PLASMA TREATED SURFACE
Publication number
20170170018
Publication date
Jun 15, 2017
LAM RESEARCH CORPORATION
Yunsang Kim
H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR SUBSTRATE FOR FLASH LAMP ANNEAL, ANNEAL SUBSTRATE, SE...
Publication number
20160351415
Publication date
Dec 1, 2016
Shin-Etsu Handotai Co., Ltd.
Tsuyoshi OHTSUKI
H01 - BASIC ELECTRIC ELEMENTS
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METHOD FOR PRODUCING A SEMICONDUCTOR
Publication number
20160225626
Publication date
Aug 4, 2016
INFINEON TECHNOLOGIES AG
Hans-Joachim Schulze
H01 - BASIC ELECTRIC ELEMENTS
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TRANSISTOR AND MANUFACTURING METHOD THEREOF
Publication number
20160020286
Publication date
Jan 21, 2016
E Ink Holdings Inc.
Hsiao-Wen Zan
H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Publication number
20150054548
Publication date
Feb 26, 2015
Semiconductor Energy Laboratory Co., Ltd.
Kiyoshi KATO
H01 - BASIC ELECTRIC ELEMENTS
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INCREASING THE DOPING EFFICIENCY DURING PROTON IRRADIATION
Publication number
20140151858
Publication date
Jun 5, 2014
Hans-Joachim Schulze
H01 - BASIC ELECTRIC ELEMENTS
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METHOD OF FORMING GROUP III NITRIDE SEMICONDUCTOR, METHOD OF FABRIC...
Publication number
20140054680
Publication date
Feb 27, 2014
Sumitomo Electric Industries, Ltd.
Shin HASHIMOTO
H01 - BASIC ELECTRIC ELEMENTS
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METHOD FOR PRODUCING A SEMICONDUCTOR
Publication number
20130049176
Publication date
Feb 28, 2013
Infineon Technologies Austria AG
Anton Mauder
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR
Publication number
20100210091
Publication date
Aug 19, 2010
Infineon Technologies Austria AG
Anton Mauder
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
METHOD OF FABRICATING A DIODE
Publication number
20100136774
Publication date
Jun 3, 2010
INFINEON TECHNOLOGIES AG
Hans-Joachim Schulze
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR HAVING A GRADED PN JUNCTION
Publication number
20100087053
Publication date
Apr 8, 2010
Infineon Technologies Austria AG
Frank Hille
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR
Publication number
20090298270
Publication date
Dec 3, 2009
Infineon Technologies Austria AG
Anton Mauder
H01 - BASIC ELECTRIC ELEMENTS
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METHOD OF PROCESSING A SEMICONDUCTOR SUBSTRATE BY THERMAL ACTIVATIO...
Publication number
20090253225
Publication date
Oct 8, 2009
COMMISSARIAT A L'ENERGIE ATOMIQUE
Sebastien Dubois
C30 - CRYSTAL GROWTH
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DIODE
Publication number
20080173968
Publication date
Jul 24, 2008
INFINEON TECHNOLOGIES AG
Hans-Joachim Schulze
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
Diode
Publication number
20070007587
Publication date
Jan 11, 2007
Reiner Barthelmess
H01 - BASIC ELECTRIC ELEMENTS