for vapor transport

Industry

CPC
Y10S252/951

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S252/00Compositions

Current Industry

Y10S252/951for vapor transport

Industries

Patents Grantslast 30 patents

Information Patent Grant
Low temperature P.sub.2 O.sub.5 oxide diffusion source
- Patent number 5,656,541
- Issue date Aug 12, 1997
- Techneglas, Inc.
- James E. Rapp
- C30 - CRYSTAL GROWTH
Information Patent Grant
Supersaturated rare earth doped semiconductor layers by chemical va...
- Patent number 5,646,425
- Issue date Jul 8, 1997
- International Business Machines Corporation
- David Bruce Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High temperature phosphorous oxide diffusion source
- Patent number 5,629,234
- Issue date May 13, 1997
- Techneglas, Inc.
- Gary R. Pickrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Supersaturated rare earth doped semiconductor layers formed by chem...
- Patent number 5,534,079
- Issue date Jul 9, 1996
- International Business Machines Corporation
- David B. Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making alkyl arsine compounds
- Patent number 5,415,129
- Issue date May 16, 1995
- Cytec Technology Corp.
- C. Joseph Calbick
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Low temperature P.sub.2 O.sub.5 oxide diffusion source
- Patent number 5,350,461
- Issue date Sep 27, 1994
- Techneglas, Inc.
- Gary R. Pickrell
- C30 - CRYSTAL GROWTH
Information Patent Grant
High temperature phosphorus oxide diffusion source
- Patent number 5,350,460
- Issue date Sep 27, 1994
- Techneglas, Inc.
- Gary R. Pickrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making supersaturated rare earth doped semiconductor laye...
- Patent number 5,322,813
- Issue date Jun 21, 1994
- International Business Machines Corporation
- David B. Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature process for producing antimony-containing semicondu...
- Patent number 5,275,966
- Issue date Jan 4, 1994
- The United States of America as represented by the Secretary of the Navy
- Robert W. Gedridge
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for making alkyl arsine compounds
- Patent number 5,274,149
- Issue date Dec 28, 1993
- American Cyanamid Company
- C. Joseph Calbick
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Use of phosphine and arsine compounds in chemical vapor deposition...
- Patent number 5,120,676
- Issue date Jun 9, 1992
- CVD Incorporated
- Andreas A. Melas
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making diamond N-type semiconductor diamond p-n junction...
- Patent number 5,112,775
- Issue date May 12, 1992
- The Tokai University Juridical Foundation
- Masamori Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ doped silicon using tertiary butyl phosphine
- Patent number 5,096,856
- Issue date Mar 17, 1992
- Texas Instruments Incorporated
- Dean W. Freeman
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semi-insulating cobalt doped indium phosphide grown by MOCVD
- Patent number 5,045,496
- Issue date Sep 3, 1991
- Rockwell International Corporation
- Kenneth L. Hess
- C30 - CRYSTAL GROWTH
Information Patent Grant
Chemical vapor deposition and chemicals with diarsines and polyarsines
- Patent number 4,999,223
- Issue date Mar 12, 1991
- CVD Incorporated
- Ravi K. Kanjolia
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of depositing arsine, antimony and phosphine substitutes
- Patent number 4,904,616
- Issue date Feb 27, 1990
- Air Products and Chemicals, Inc.
- David A. Bohling
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Solid diffusion source of GD oxide/P205 compound and method of maki...
- Patent number 4,846,902
- Issue date Jul 11, 1989
- Owens-Illinois Television Products Inc.
- Gary R. Pickrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phosphorous planar dopant source for low temperature applications
- Patent number 4,800,175
- Issue date Jan 24, 1989
- Owens-Illinois Television Products Inc.
- James E. Rapp
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Semiconductor dopant source
- Patent number 4,749,615
- Issue date Jun 7, 1988
- Stemcor Corporation
- Alan M. Bonny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOCVD of semi-insulating indium phosphide based compositions
- Patent number 4,716,130
- Issue date Dec 29, 1987
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- Wilbur D. Johnston
- C30 - CRYSTAL GROWTH
Information Patent Grant
Porous silicon nitride semiconductor dopant carriers
- Patent number 4,596,716
- Issue date Jun 24, 1986
- Kennecott Corporation
- Gabriel P. DeMunda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for diffusing impurities into a semiconductor body vapor ph...
- Patent number 4,592,793
- Issue date Jun 3, 1986
- International Business Machines Corporation
- Harold J. Hovel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar diffusion source
- Patent number 4,588,455
- Issue date May 13, 1986
- Emulsitone Company
- Milton Genser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Foam semiconductor dopant carriers
- Patent number 4,526,826
- Issue date Jul 2, 1985
- Kennecott Corporation
- Monika O. Ten Eyck
- C30 - CRYSTAL GROWTH
Information Patent Grant
Porous semiconductor dopant carriers
- Patent number 4,525,429
- Issue date Jun 25, 1985
- Kennecott Corporation
- Gregory A. Kaiser
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon dopant source in intermetallic semiconductor growth operations
- Patent number 4,504,331
- Issue date Mar 12, 1985
- International Business Machines Corporation
- Thomas F. Kuech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stable suspensions of boron, phosphorus, antimony and arsenic dopants
- Patent number 4,490,192
- Issue date Dec 25, 1984
- Allied Corporation
- Arunava Gupta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Molecular beam epitaxy electrolytic dopant source
- Patent number 4,447,276
- Issue date May 8, 1984
- The Post Office
- Graham J. Davies
- C30 - CRYSTAL GROWTH
Information Patent Grant
Multi-range doping of epitaxial III-V layers from a single source
- Patent number 4,407,694
- Issue date Oct 4, 1983
- Hughes Aircraft Company
- Victor K. Eu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
B.sub.2 O.sub.3 Diffusion processes
- Patent number 4,379,006
- Issue date Apr 5, 1983
- Owens-Illinois, Inc.
- James E. Rapp
- C30 - CRYSTAL GROWTH

for vapor transport

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Low temperature P.sub.2 O.sub.5 oxide diffusion source

Supersaturated rare earth doped semiconductor layers by chemical va...

High temperature phosphorous oxide diffusion source

Supersaturated rare earth doped semiconductor layers formed by chem...

Process for making alkyl arsine compounds

Low temperature P.sub.2 O.sub.5 oxide diffusion source

High temperature phosphorus oxide diffusion source

Method of making supersaturated rare earth doped semiconductor laye...

Low temperature process for producing antimony-containing semicondu...

Process for making alkyl arsine compounds

Use of phosphine and arsine compounds in chemical vapor deposition...

Method of making diamond N-type semiconductor diamond p-n junction...

In-situ doped silicon using tertiary butyl phosphine

Semi-insulating cobalt doped indium phosphide grown by MOCVD

Chemical vapor deposition and chemicals with diarsines and polyarsines

Method of depositing arsine, antimony and phosphine substitutes

Solid diffusion source of GD oxide/P205 compound and method of maki...

Phosphorous planar dopant source for low temperature applications

Semiconductor dopant source

MOCVD of semi-insulating indium phosphide based compositions

Porous silicon nitride semiconductor dopant carriers

Process for diffusing impurities into a semiconductor body vapor ph...

Planar diffusion source

Foam semiconductor dopant carriers

Porous semiconductor dopant carriers

Silicon dopant source in intermetallic semiconductor growth operations

Stable suspensions of boron, phosphorus, antimony and arsenic dopants

Molecular beam epitaxy electrolytic dopant source

Multi-range doping of epitaxial III-V layers from a single source

B.sub.2 O.sub.3 Diffusion processes