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H01L21/02612

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02612Formation types

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating vertically oriented planar structures for adv...
- Patent number 12,051,588
- Issue date Jul 30, 2024
- The Penn State Research Foundation
- Joshua Alexander Robinson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device and a semiconductor device
- Patent number 12,027,591
- Issue date Jul 2, 2024
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor substrate, method for manufacturing same, and dev...
- Patent number 12,020,928
- Issue date Jun 25, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thermal deposition of silicon-germanium
- Patent number 11,830,734
- Issue date Nov 28, 2023
- Applied Materials, Inc.
- Huiyuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a high temperature silicon carbide transistor device
- Patent number 11,823,899
- Issue date Nov 21, 2023
- CoolCAD Electronics, LLC
- Neil Goldsman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide/graphite composite and articles and assemblies comp...
- Patent number 11,713,252
- Issue date Aug 1, 2023
- Entegris, Inc.
- Troy Scoggins
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Device comprising 2D material
- Patent number 11,251,307
- Issue date Feb 15, 2022
- Samsung Electronics Co., Ltd.
- Tae-jin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide/graphite composite and articles and assemblies comp...
- Patent number 11,117,806
- Issue date Sep 14, 2021
- Entegris, Inc.
- Troy Scoggins
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for forming a semiconductor device and a semiconductor device
- Patent number 11,107,893
- Issue date Aug 31, 2021
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically oriented planar structures of transition metal chalcogen...
- Patent number 11,024,710
- Issue date Jun 1, 2021
- The Penn State Research Foundation
- Joshua Alexander Robinson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film wafer transfer and structure for electronic devices
- Patent number 10,957,816
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit controlled ejection system (ICCES) for massively...
- Patent number 10,790,571
- Issue date Sep 29, 2020
- Matrics2, Inc.
- Michael R. Arneson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Wafer flatness control using backside compensation structure
- Patent number 10,763,099
- Issue date Sep 1, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an active pattern having a lower pat...
- Patent number 10,714,397
- Issue date Jul 14, 2020
- Samsung Electronics Co., Ltd.
- Mirco Cantoro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid phase epitaxy of 3C-SiC on Si(001)
- Patent number 10,686,041
- Issue date Jun 16, 2020
- The Government of the United States of America, as represented by the Secreta...
- Connie H. Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lift printing of multi-composition material structures
- Patent number 10,629,442
- Issue date Apr 21, 2020
- Orbotech Ltd.
- Michael Zenou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of fabricating device including two-dimensional material
- Patent number 10,600,646
- Issue date Mar 24, 2020
- Samsung Electronics Co., Ltd.
- Tae-jin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with a silicon germanium alloy fin and sili...
- Patent number 10,600,870
- Issue date Mar 24, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked body including graphene film and electronic device includin...
- Patent number 10,580,869
- Issue date Mar 3, 2020
- Sumitomo Electric Industries, Ltd
- Masaya Okada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating device including two-dimensional material
- Patent number 10,515,798
- Issue date Dec 24, 2019
- Samsung Electronics Co., Ltd.
- Tae-jin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device including a pair of...
- Patent number 10,453,756
- Issue date Oct 22, 2019
- Samsung Electronics Co., Ltd.
- Mirco Cantoro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxy using epitaxy-prevention layers
- Patent number 10,388,522
- Issue date Aug 20, 2019
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having graphene mate...
- Patent number 10,347,723
- Issue date Jul 9, 2019
- Infineon Technologies AG
- Guenther Ruhl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC structure, semiconductor device having SiC structure, and proce...
- Patent number 10,283,594
- Issue date May 7, 2019
- Sumitomo Electric Industries, Ltd.
- Hiroyuki Nagasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making an electrical contact on a graphite layer, contac...
- Patent number 10,263,081
- Issue date Apr 16, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Vincent Renard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing an electronic device with a graphene device and...
- Patent number 10,236,347
- Issue date Mar 19, 2019
- King Abdullah University of Science and Technology
- Aftab Mustansir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-FET with graded silicon-germanium channel
- Patent number 10,153,157
- Issue date Dec 11, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a graphene layer, and method of manufac...
- Patent number 10,134,848
- Issue date Nov 20, 2018
- Infineon Technologies AG
- Guenther Ruhl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene device and method of fabricating a graphene device
- Patent number 10,020,365
- Issue date Jul 10, 2018
- Nokia Technologies Oy
- Asta Maria Karkkainen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Composite substrate, semiconductor chip having a composite substrat...
- Patent number 9,997,671
- Issue date Jun 12, 2018
- Osram Opto Semiconductors GmbH
- Johannes Baur
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MANUFACTURING METHOD OF ITO THIN FILM BASED ON SOLUTION METHOD
- Publication number 20230094245
- Publication date Mar 30, 2023
- WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Jia LI
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Application
THERMAL DEPOSITION OF SILICON-GERMANIUM
- Publication number 20220375750
- Publication date Nov 24, 2022
- Applied Materials, Inc.
- Huiyuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SILICON CARBIDE DEVICE AND SILICON CARBIDE
- Publication number 20220093401
- Publication date Mar 24, 2022
- NUFLARE TECHNOLOGY, INC.
- Kiyotaka MIYANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND DEV...
- Publication number 20210398807
- Publication date Dec 23, 2021
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE/GRAPHITE COMPOSITE AND ARTICLES AND ASSEMBLIES COMP...
- Publication number 20210363019
- Publication date Nov 25, 2021
- Entegris, Inc.
- Troy SCOGGINS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Semiconductor Device and a Semiconductor Device
- Publication number 20210359087
- Publication date Nov 18, 2021
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL 2D STRUCTURES FOR ADVANCED ELECTRONIC AND OPTOELECTRONIC S...
- Publication number 20210257451
- Publication date Aug 19, 2021
- The Penn State Research Foundation
- Joshua Alexander Robinson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS
- Publication number 20200156946
- Publication date May 21, 2020
- Chien-Min Sung
- B82 - NANO-TECHNOLOGY
Information Patent Application
WAFER FLATNESS CONTROL USING BACKSIDE COMPENSATION STRUCTURE
- Publication number 20200058486
- Publication date Feb 20, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
INTEGRATED CIRCUIT CONTROLLED EJECTION SYSTEM (ICCES) FOR MASSIVELY...
- Publication number 20190273303
- Publication date Sep 5, 2019
- Matrics2, Inc.
- Michael R. Arneson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20190189450
- Publication date Jun 20, 2019
- NUFLARE TECHNOLOGY, INC.
- Kiyotaka MIYANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Having Graphene Mate...
- Publication number 20190081143
- Publication date Mar 14, 2019
- INFINEON TECHNOLOGIES AG
- Guenther Ruhl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE COMPRISING 2D MATERIAL
- Publication number 20190074381
- Publication date Mar 7, 2019
- Samsung Electronics Co., Ltd.
- Tae-jin PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE COMPRISING 2D MATERIAL
- Publication number 20190074380
- Publication date Mar 7, 2019
- Samsung Electronics Co., Ltd.
- Tae-jin PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL
- Publication number 20190074179
- Publication date Mar 7, 2019
- Samsung Electronics Co., Ltd.
- Tae-jin PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL
- Publication number 20190074180
- Publication date Mar 7, 2019
- Samsung Electronics Co., Ltd.
- Tae-jin PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR OBTAINING A GRAPHENE-BASED FET, IN PARTICULAR A MEMORY F...
- Publication number 20190035907
- Publication date Jan 31, 2019
- Centre National de la Recherche Scientifique - CNRS
- Mohamed BOUTCHICH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE/GRAPHITE COMPOSITE AND ARTICLES AND ASSEMBLIES COMP...
- Publication number 20180240878
- Publication date Aug 23, 2018
- Entegris, Inc.
- Troy SCOGGINS
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SELECTIVE EPITAXY USING EPITAXY-PREVENTION LAYERS
- Publication number 20180218900
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING AN ELECTRICAL CONTACT ON A GRAPHITE LAYER, CONTAC...
- Publication number 20180108740
- Publication date Apr 19, 2018
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Vincent RENARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS
- Publication number 20180044185
- Publication date Feb 15, 2018
- Chien-Min Sung
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH A SILICON GERMANIUM ALLOY FIN AND SILI...
- Publication number 20170352729
- Publication date Dec 7, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH A SILICON GERMANIUM ALLOY FIN AND SILI...
- Publication number 20170033182
- Publication date Feb 2, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTOR, PIXEL STRUCTURE, AND METHOD FOR MANUFACTURING...
- Publication number 20160365361
- Publication date Dec 15, 2016
- Chunsheng Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE TO SUPPRESS FINFET HEATING
- Publication number 20160284586
- Publication date Sep 29, 2016
- GLOBALFOUNDRIES INC.
- Emre ALPTEKIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIFT PRINTING OF MULTI-COMPOSITION MATERIAL STRUCTURES
- Publication number 20160233089
- Publication date Aug 11, 2016
- ORBOTECH LTD.
- Michael ZENOU
- B33 - ADDITIVE MANUFACTURING TECHNOLOGY
Information Patent Application
SILICON-GERMANIUM FIN OF HEIGHT ABOVE CRITICAL THICKNESS
- Publication number 20160181095
- Publication date Jun 23, 2016
- GLOBALFOUNDRIES INC.
- Kanggou Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOLYBDENUM DISULFIDE FILM FORMATION AND TRANSFER TO A SUBSTRATE
- Publication number 20160141174
- Publication date May 19, 2016
- IMEC vzw
- Daniele Chiappe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF GERMANIUM-CONTAINING CHANNEL REGION BY THERMAL CONDENS...
- Publication number 20150318216
- Publication date Nov 5, 2015
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE TRANSISTOR WITH A SUBLITHOGRAPHIC CHANNEL WIDTH
- Publication number 20150236147
- Publication date Aug 20, 2015
- International Business Machines Corporation
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS

Formation types

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of fabricating vertically oriented planar structures for adv...

Method for forming a semiconductor device and a semiconductor device

SiC semiconductor substrate, method for manufacturing same, and dev...

Thermal deposition of silicon-germanium

Fabrication of a high temperature silicon carbide transistor device

Silicon carbide/graphite composite and articles and assemblies comp...

Device comprising 2D material

Silicon carbide/graphite composite and articles and assemblies comp...

Method for forming a semiconductor device and a semiconductor device

Vertically oriented planar structures of transition metal chalcogen...

Thin film wafer transfer and structure for electronic devices

Integrated circuit controlled ejection system (ICCES) for massively...

Wafer flatness control using backside compensation structure

Semiconductor device including an active pattern having a lower pat...

Solid phase epitaxy of 3C-SiC on Si(001)

Lift printing of multi-composition material structures

Method of fabricating device including two-dimensional material

Semiconductor structure with a silicon germanium alloy fin and sili...

Stacked body including graphene film and electronic device includin...

Method of fabricating device including two-dimensional material

Method for manufacturing a semiconductor device including a pair of...

Selective epitaxy using epitaxy-prevention layers

Method of manufacturing a semiconductor device having graphene mate...

SiC structure, semiconductor device having SiC structure, and proce...

Method for making an electrical contact on a graphite layer, contac...

Method of producing an electronic device with a graphene device and...

P-FET with graded silicon-germanium channel

Semiconductor device having a graphene layer, and method of manufac...

Graphene device and method of fabricating a graphene device

Composite substrate, semiconductor chip having a composite substrat...

Patents Applicationslast 30 patents

MANUFACTURING METHOD OF ITO THIN FILM BASED ON SOLUTION METHOD

THERMAL DEPOSITION OF SILICON-GERMANIUM

MANUFACTURING METHOD OF SILICON CARBIDE DEVICE AND SILICON CARBIDE

SIC SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND DEV...

SILICON CARBIDE/GRAPHITE COMPOSITE AND ARTICLES AND ASSEMBLIES COMP...

Method for Forming a Semiconductor Device and a Semiconductor Device

VERTICAL 2D STRUCTURES FOR ADVANCED ELECTRONIC AND OPTOELECTRONIC S...

GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS

WAFER FLATNESS CONTROL USING BACKSIDE COMPENSATION STRUCTURE

INTEGRATED CIRCUIT CONTROLLED EJECTION SYSTEM (ICCES) FOR MASSIVELY...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Method of Manufacturing a Semiconductor Device Having Graphene Mate...

DEVICE COMPRISING 2D MATERIAL

DEVICE COMPRISING 2D MATERIAL

METHOD OF FABRICATING DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL

METHOD OF FABRICATING DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL

METHOD FOR OBTAINING A GRAPHENE-BASED FET, IN PARTICULAR A MEMORY F...

SILICON CARBIDE/GRAPHITE COMPOSITE AND ARTICLES AND ASSEMBLIES COMP...

SELECTIVE EPITAXY USING EPITAXY-PREVENTION LAYERS

METHOD FOR MAKING AN ELECTRICAL CONTACT ON A GRAPHITE LAYER, CONTAC...

GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS

SEMICONDUCTOR STRUCTURE WITH A SILICON GERMANIUM ALLOY FIN AND SILI...

SEMICONDUCTOR STRUCTURE WITH A SILICON GERMANIUM ALLOY FIN AND SILI...

THIN FILM TRANSISTOR, PIXEL STRUCTURE, AND METHOD FOR MANUFACTURING...

METHOD AND STRUCTURE TO SUPPRESS FINFET HEATING

LIFT PRINTING OF MULTI-COMPOSITION MATERIAL STRUCTURES

SILICON-GERMANIUM FIN OF HEIGHT ABOVE CRITICAL THICKNESS

MOLYBDENUM DISULFIDE FILM FORMATION AND TRANSFER TO A SUBSTRATE

FORMATION OF GERMANIUM-CONTAINING CHANNEL REGION BY THERMAL CONDENS...

GRAPHENE TRANSISTOR WITH A SUBLITHOGRAPHIC CHANNEL WIDTH