Frequency reading type sense amplifier

Industry

CPC
G11C2207/066

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C2207/00Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store

Current Industry

G11C2207/066Frequency reading type sense amplifier

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Patents Grantslast 30 patents

Information Patent Grant
Apparatus and method for reading a storage device with a ring oscil...
- Patent number 9,514,812
- Issue date Dec 6, 2016
- Hewlett Packard Enterprise Development LP
- Robert J. Brooks
- G11 - INFORMATION STORAGE
Information Patent Grant
Capacitive crossbar arrays
- Patent number 8,605,488
- Issue date Dec 10, 2013
- Hewlett-Packard Development Company, L.P.
- Dmitri Borisovich Strukov
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance based memory circuit with digital sensing
- Patent number 8,264,895
- Issue date Sep 11, 2012
- QUALCOMM Incorporated
- Hari Rao
- G11 - INFORMATION STORAGE
Information Patent Grant
Reading of the state of a non-volatile storage element
- Patent number 7,813,216
- Issue date Oct 12, 2010
- STMicroelectronics S.A.
- Sylvie Wuidart
- G11 - INFORMATION STORAGE
Information Patent Grant
Simultaneous read circuit for multiple memory cells
- Patent number 7,609,563
- Issue date Oct 27, 2009
- Micron Technology, Inc.
- Kristy A. Campbell
- G11 - INFORMATION STORAGE
Information Patent Grant
Simultaneous read circuit for multiple memory cells
- Patent number 7,366,030
- Issue date Apr 29, 2008
- Micron Technology, Inc.
- Kristy A. Campbell
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device having a voltage-controlled-oscillator-...
- Patent number 7,292,471
- Issue date Nov 6, 2007
- NEC Corporation
- Noboru Sakimura
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated charge sensing scheme for resistive memories
- Patent number 7,151,698
- Issue date Dec 19, 2006
- Micron Technology, Inc.
- R. Jacob Baker
- G11 - INFORMATION STORAGE
Information Patent Grant
Readout circuit for semiconductor memory device based on a number o...
- Patent number 7,133,312
- Issue date Nov 7, 2006
- NEC Corporation
- Noboru Sakimura
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated charge sensing scheme for resistive memories
- Patent number 6,901,020
- Issue date May 31, 2005
- Micron Technology, Inc.
- R. Jacob Baker
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated charge sensing scheme for resistive memories
- Patent number 6,870,784
- Issue date Mar 22, 2005
- Micron Technology, Inc.
- R. Jacob Baker
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Capacitive Crossbar Arrays
- Publication number 20120014170
- Publication date Jan 19, 2012
- Hewlet- Packard Developement Company L.P.
- Dmitri Borisovich Strukov
- G11 - INFORMATION STORAGE
Information Patent Application
Resistance Based Memory Circuit With Digital Sensing
- Publication number 20110128771
- Publication date Jun 2, 2011
- QUALCOMM Incorporated
- Hari Rao
- G11 - INFORMATION STORAGE
Information Patent Application
READING OF THE STATE OF A NON-VOLATILE STORAGE ELEMENT
- Publication number 20100135087
- Publication date Jun 3, 2010
- STMicroelectronics S.A.
- Sylvie Wuidart
- G11 - INFORMATION STORAGE
Information Patent Application
Reading of the State of a Non-Volatile Storage Element
- Publication number 20080253200
- Publication date Oct 16, 2008
- STMicroelectronics S.A.
- Sylvie Wuidart
- G11 - INFORMATION STORAGE
Information Patent Application
Simultaneous read circuit for multiple memory cells
- Publication number 20080212357
- Publication date Sep 4, 2008
- Kristy A. Campbell
- G11 - INFORMATION STORAGE
Information Patent Application
Readout circuit for semiconductor storage device
- Publication number 20060158945
- Publication date Jul 20, 2006
- NEC Corporation
- Noboru Sakimura
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated charge sensing scheme for resistive memories
- Publication number 20060062062
- Publication date Mar 23, 2006
- R. Jacob Baker
- G11 - INFORMATION STORAGE
Information Patent Application
Simultaneous read circuit for multiple memory cells
- Publication number 20050265082
- Publication date Dec 1, 2005
- Kristy A. Campbell
- G11 - INFORMATION STORAGE
Information Patent Application
Readout circuit for semiconductor storage device
- Publication number 20050024950
- Publication date Feb 3, 2005
- NEC Corporation
- Noboru Sakimura
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated charge sensing scheme for resistive memories
- Publication number 20050018512
- Publication date Jan 27, 2005
- R. Jacob Baker
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated charge sensing scheme for resistive memories
- Publication number 20040240294
- Publication date Dec 2, 2004
- R. Jacob Baker
- G11 - INFORMATION STORAGE

Frequency reading type sense amplifier

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Apparatus and method for reading a storage device with a ring oscil...

Capacitive crossbar arrays

Resistance based memory circuit with digital sensing

Reading of the state of a non-volatile storage element

Simultaneous read circuit for multiple memory cells

Simultaneous read circuit for multiple memory cells

Semiconductor memory device having a voltage-controlled-oscillator-...

Integrated charge sensing scheme for resistive memories

Readout circuit for semiconductor memory device based on a number o...

Integrated charge sensing scheme for resistive memories

Integrated charge sensing scheme for resistive memories

Patents Applicationslast 30 patents

Capacitive Crossbar Arrays

Resistance Based Memory Circuit With Digital Sensing

READING OF THE STATE OF A NON-VOLATILE STORAGE ELEMENT

Reading of the State of a Non-Volatile Storage Element

Simultaneous read circuit for multiple memory cells

Readout circuit for semiconductor storage device

Integrated charge sensing scheme for resistive memories

Simultaneous read circuit for multiple memory cells

Readout circuit for semiconductor storage device

Integrated charge sensing scheme for resistive memories

Integrated charge sensing scheme for resistive memories