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Generation of oscillations using amplifier with regenerative feedback from output to input
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H03B5/00
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H
ELECTRICITY
H03
Electronic circuits
H03B
GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER GENERATION OF NOISE BY SUCH CIRCUITS
Current Industry
H03B5/00
Generation of oscillations using amplifier with regenerative feedback from output to input
Sub Industries
H03B5/02
Details
H03B5/04
Modifications of generator to compensate for variations in physical values
H03B5/06
Modifications of generator to ensure starting of oscillations
H03B5/08
with frequency-determining element comprising lumped inductance and capacitance
H03B5/10
active element in amplifier being vacuum tube
H03B5/12
active element in amplifier being semiconductor device
H03B5/1203
the amplifier being a single transistor
H03B5/1206
using multiple transistors for amplification
H03B5/1209
the amplifier having two current paths operating in a differential manner and a current source or degeneration circuit in common to both paths
H03B5/1212
the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other
H03B5/1215
the current source or degeneration circuit being in common to both transistors of the pair
H03B5/1218
the generator being of the balanced type
H03B5/1221
the amplifier comprising multiple amplification stages connected in cascade
H03B5/1225
the generator comprising multiple amplifiers connected in parallel
H03B5/1228
the amplifier comprising one or more field effect transistors
H03B5/1231
the amplifier comprising one or more bipolar transistors
H03B5/1234
and comprising means for varying the output amplitude of the generator
H03B5/1237
comprising means for varying the frequency of the generator
H03B5/124
the means comprising a voltage dependent capacitance
H03B5/1243
the means comprising voltage variable capacitance diodes
H03B5/1246
the means comprising transistors used to provide a variable capacitance
H03B5/125
the transistors being bipolar transistors
H03B5/1253
the transistors being field-effect transistors
H03B5/1256
the means comprising a variable inductance
H03B5/1259
the means comprising a variable active inductor
H03B5/1262
the means comprising switched elements
H03B5/1265
switched capacitors
H03B5/1268
switched inductors
H03B5/1271
the frequency being controlled by a control current
H03B5/1275
having further means for varying a parameter in dependence on the frequency
H03B5/1278
the parameter being an amplitude of a signal
H03B5/1281
the parameter being the amount of feedback
H03B5/1284
the parameter being another frequency
H03B5/1287
the parameter being a quality factor
H03B5/129
the parameter being a bias voltage or a power supply
H03B5/1293
having means for achieving a desired tuning characteristic
H03B5/1296
the feedback circuit comprising a transformer
H03B5/14
frequency-determining element connected via bridge circuit to closed ring around which signal is transmitted
H03B5/16
active element in amplifier being vacuum tube
H03B5/18
with frequency-determining element comprising distributed inductance and capacitance
H03B5/1805
the frequency-determining element being a coaxial resonator
H03B5/1811
the active element in the amplifier being a vacuum tube
H03B5/1817
the frequency-determining element being a cavity resonator
H03B5/1823
the active element in the amplifier being a semiconductor device
H03B5/1829
the semiconductor device being a field-effect device
H03B5/1835
the active element in the amplifier being a vacuum tube
H03B5/1841
the frequency-determining element being a strip line resonator
H03B5/1847
the active element in the amplifier being a semiconductor device
H03B5/1852
the semiconductor device being a field-effect device
H03B5/1858
the active element in the amplifier being a vacuum tube
H03B5/1864
the frequency-determining element being a dielectric resonator
H03B5/187
the active element in the amplifier being a semiconductor device
H03B5/1876
the semiconductor device being a field-effect device
H03B5/1882
the frequency-determining element being a magnetic-field sensitive resonator
H03B5/1888
the active element in the amplifier being a semiconductor device
H03B5/1894
the semiconductor device being a field-effect device
H03B5/20
with frequency-determining element comprising resistance and either capacitance or inductance
H03B5/22
active element in amplifier being vacuum tube
H03B5/24
active element in amplifier being semiconductor device
H03B5/26
frequency-determining element being part of bridge circuit in closed ring around which signal is transmitted frequency-determining element being connected via a bridge circuit to such a closed ring
H03B5/28
active element in amplifier being vacuum tube
H03B5/30
with frequency-determining element being electromechanical resonator
H03B5/32
being a piezo-electric resonator
H03B5/323
the resonator having more than two terminals
H03B5/326
the resonator being an acoustic wave device
H03B5/34
active element in amplifier being vacuum tube
H03B5/36
active element in amplifier being semiconductor device
H03B5/362
the amplifier being a single transistor
H03B5/364
the amplifier comprising field effect transistors
H03B5/366
and comprising means for varying the frequency by a variable voltage or current
H03B5/368
the means being voltage variable capacitance diodes
H03B5/38
frequency-determining element being connected via bridge circuit to closed ring around which signal is transmitted
H03B5/40
being a magnetostrictive resonator
H03B5/42
frequency-determining element connected via bridge circuit to closed ring around which signal is transmitted
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