Gettering-armorphous layers

Industry

CPC
Y10S148/061

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/061Gettering-armorphous layers

Industries

Patents Grantslast 30 patents

Information Patent Grant
Fabrication method for reduced-dimension FET devices
- Patent number 5,908,307
- Issue date Jun 1, 1999
- Ultratech Stepper, Inc.
- Somit Talwar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation for integrated circuits
- Patent number 5,874,317
- Issue date Feb 23, 1999
- Advanced Micro Devices, Inc.
- Andre Stolmeijer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming impurity junction regions of semiconductor device
- Patent number 5,668,020
- Issue date Sep 16, 1997
- Hyundai Electronics Industries Co., Ltd.
- Kil Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for photo annealing non-single crystalline semiconductor films
- Patent number 5,296,405
- Issue date Mar 22, 1994
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for photo annealing non-single crystalline semiconductor films
- Patent number 5,171,710
- Issue date Dec 15, 1992
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of gettering unintentional mobile impurities in silicon wafe...
- Patent number 5,130,260
- Issue date Jul 14, 1992
- Mitsubishi Materials Corporation
- Hisaaki Suga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of gettering heavy-metal impurities from silicon substrates...
- Patent number 4,994,399
- Issue date Feb 19, 1991
- Fujitsu Limited
- Masaki Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation of indium gallium arsenide surfaces
- Patent number 4,843,037
- Issue date Jun 27, 1989
- Bell Communications Research, Inc.
- Eli Yablonovitch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preventing hillock formation in polysilicon layer by oxyg...
- Patent number 4,740,481
- Issue date Apr 26, 1988
- Motorola Inc.
- Syd R. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device using amorphous sili...
- Patent number 4,697,333
- Issue date Oct 6, 1987
- Kabushiki Kaisha Toshiba
- Moriya Nakahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a thin semiconductor film
- Patent number 4,693,759
- Issue date Sep 15, 1987
- Sony Corporation
- Takashi Noguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Means and method for stabilizing polycrystalline semiconductor layers
- Patent number 4,682,407
- Issue date Jul 28, 1987
- Motorola, Inc.
- Syd R. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for controlling mobile ion contamination in semiconductor d...
- Patent number 4,679,308
- Issue date Jul 14, 1987
- Honeywell Inc.
- Chris J. Finn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of making semiconductors having shallow, hyperabrupt doped...
- Patent number 4,617,066
- Issue date Oct 14, 1986
- Hughes Aircraft Company
- Prahalad K. Vasudev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a CMOS circuit having a reduced tendency to latch...
- Patent number 4,603,471
- Issue date Aug 5, 1986
- Fairchild Semiconductor Corporation
- Robert J. Strain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor integrated circuits having backside...
- Patent number 4,589,928
- Issue date May 20, 1986
- AT&T Bell Laboratories
- John V. Dalton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of eliminating p-type electrical activity and increasing cha...
- Patent number 4,588,447
- Issue date May 13, 1986
- Rockwell International Corporation
- Ilan Golecki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation process of amorphous silicon film
- Patent number 4,585,671
- Issue date Apr 29, 1986
- Mitsui Toatsu Chemicals, Incorporated
- Nobuhisa Kitagawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process of gettering semiconductor devices
- Patent number 4,561,171
- Issue date Dec 31, 1985
- Shell Austria Aktiengesellschaft
- Viktor Schlosser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside gettering of silicon wafers utilizing selectively annealed...
- Patent number 4,559,086
- Issue date Dec 17, 1985
- Eastman Kodak Company
- Gilbert A. Hawkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type semiconductor material having a wide band gap
- Patent number 4,469,715
- Issue date Sep 4, 1984
- Energy Conversion Devices, Inc.
- Arun Madan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor substrate and a manufacturing method thereof
- Patent number 4,276,114
- Issue date Jun 30, 1981
- Hitachi, Ltd.
- Yukio Takano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous semiconductors equivalent to crystalline semiconductors p...
- Patent number 4,226,898
- Issue date Oct 7, 1980
- Energy Conversion Devices, Inc.
- Stanford R. Ovshinsky
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for the production of a semiconductor component with at lea...
- Patent number 4,216,030
- Issue date Aug 5, 1980
- Siemens Aktiengesellschaft
- Juergen Graul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous semiconductor member and method of making the same
- Patent number 4,177,473
- Issue date Dec 4, 1979
- Energy Conversion Devices, Inc.
- Stanford R. Ovshinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cermet layer for amorphous silicon solar cells
- Patent number 4,167,015
- Issue date Sep 4, 1979
- RCA Corporation
- Joseph J. Hanak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlled surface texturization of crystalline semicondu...
- Patent number 4,147,564
- Issue date Apr 3, 1979
- SRI International
- Thomas J. Magee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon integrated circuit region containing implanted arsenic and...
- Patent number 4,137,103
- Issue date Jan 30, 1979
- International Business Machines Corporation
- Siegfried R. Mader
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of polycrystalline semiconductor film with intermetallic nuc...
- Patent number 4,132,571
- Issue date Jan 2, 1979
- International Business Machines Corporation
- Jerome J. Cuomo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Minimization of misfit dislocations in silicon by double implantati...
- Patent number 4,111,719
- Issue date Sep 5, 1978
- International Business Machines Corporation
- Siegfried R. Mader
- H01 - BASIC ELECTRIC ELEMENTS

Gettering-armorphous layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Fabrication method for reduced-dimension FET devices

Trench isolation for integrated circuits

Method for forming impurity junction regions of semiconductor device

Method for photo annealing non-single crystalline semiconductor films

Method for photo annealing non-single crystalline semiconductor films

Method of gettering unintentional mobile impurities in silicon wafe...

Method of gettering heavy-metal impurities from silicon substrates...

Passivation of indium gallium arsenide surfaces

Method of preventing hillock formation in polysilicon layer by oxyg...

Method of manufacturing a semiconductor device using amorphous sili...

Method of forming a thin semiconductor film

Means and method for stabilizing polycrystalline semiconductor layers

Process for controlling mobile ion contamination in semiconductor d...

Process of making semiconductors having shallow, hyperabrupt doped...

Method for making a CMOS circuit having a reduced tendency to latch...

Method of making semiconductor integrated circuits having backside...

Method of eliminating p-type electrical activity and increasing cha...

Formation process of amorphous silicon film

Process of gettering semiconductor devices

Backside gettering of silicon wafers utilizing selectively annealed...

P-type semiconductor material having a wide band gap

Semiconductor substrate and a manufacturing method thereof

Amorphous semiconductors equivalent to crystalline semiconductors p...

Process for the production of a semiconductor component with at lea...

Amorphous semiconductor member and method of making the same

Cermet layer for amorphous silicon solar cells

Method of controlled surface texturization of crystalline semicondu...

Silicon integrated circuit region containing implanted arsenic and...

Growth of polycrystalline semiconductor film with intermetallic nuc...

Minimization of misfit dislocations in silicon by double implantati...