Gp III-V liquid phase epitaxy

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CPC
Y10S148/066

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/066Gp III-V liquid phase epitaxy

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method for making III-Nitride laser and detection device
- Patent number 5,834,331
- Issue date Nov 10, 1998
- Northwestern University
- Manijeh Razeghi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing a light emitting diode
- Patent number 5,707,891
- Issue date Jan 13, 1998
- Sharp Kabushiki Kaisha
- Tadasu Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing green light emitting diode
- Patent number 5,032,539
- Issue date Jul 16, 1991
- Kabushiki Kaisha Toshiba
- Masayuki Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor laser device
- Patent number 4,966,863
- Issue date Oct 30, 1990
- Mitsubishi Denki Kabushiki Kaisha
- Hitoshi Mizuochi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device and method of manufacturing the...
- Patent number 4,958,202
- Issue date Sep 18, 1990
- Kabushiki Kaisha Toshiba
- Jun'ichi Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material for light emitting element and method for crystal growth t...
- Patent number 4,944,811
- Issue date Jul 31, 1990
- Tokuzo Sukegawa
- Tokuzo Sukegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Solution growth of lattice mismatched and solubility mismatched het...
- Patent number 4,876,210
- Issue date Oct 24, 1989
- The University of Delaware
- Allen M. Barnett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device and method of manufacturing the...
- Patent number 4,870,468
- Issue date Sep 26, 1989
- Kabushiki Kaisha Toshiba
- Jun'ichi Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interrupted liquid phase epitaxy process
- Patent number 4,859,628
- Issue date Aug 22, 1989
- Northern Telecom Limited
- Douglas G. Knight
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of semi-insulating indium phosphide by liquid phase epitaxy
- Patent number 4,849,373
- Issue date Jul 18, 1989
- Northern Telecom Limited
- D. Gordon Knight
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for generating a strip waveguide
- Patent number 4,818,722
- Issue date Apr 4, 1989
- Siemens Aktiengesellschaft
- Jochen Heinen
- G02 - OPTICS
Information Patent Grant
Method of manufacturing Group III-V compound semiconductor solar ba...
- Patent number 4,775,639
- Issue date Oct 4, 1988
- Mitsubishi Denki Kabushiki Kaisha
- Susumu Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing green light emitting diodes
- Patent number 4,671,829
- Issue date Jun 9, 1987
- Matsushita Electric Industrial Co., Ltd.
- Toshiharu Kawabata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated quantum well lasers for wavelength division multiplexing
- Patent number 4,637,122
- Issue date Jan 20, 1987
- Honeywell Inc.
- James K. Carney
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor substrate and method for manufacturing semiconductor...
- Patent number 4,597,166
- Issue date Jul 1, 1986
- Tokyo Shibaura Denki Kabushiki Kaisha
- Hiroshi Iwai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-terminal ternary III-V multicolor solar cells and process of...
- Patent number 4,451,691
- Issue date May 29, 1984
- Chevron Research Company
- Lewis M. Fraas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium phosphide photodetector having an as-grown surface and prod...
- Patent number 3,976,872
- Issue date Aug 24, 1976
- Honeywell Inc.
- Paul E. Petersen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of dislocations in multilayer structures of zinc-blend ma...
- Patent number 3,962,716
- Issue date Jun 8, 1976
- Bell Telephone Laboratories, Incorporated
- Pierre Marc Petroff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting diode and method for producing same
- Patent number 3,958,265
- Issue date May 18, 1976
- Revaz Alexandrovich Charmakadze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress reduction in AlGaAs-AlGaAsP multilayer structures
- Patent number 3,958,263
- Issue date May 18, 1976
- Bell Telephone Laboratories, Incorporated
- Morton B. Panish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photocathodes
- Patent number 3,932,883
- Issue date Jan 13, 1976
- The British Secretary of State for Defense
- Michael Charles Rowland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3737737
- Patent number 3,737,737
- Issue date Jun 5, 1973
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3619304
- Patent number 3,619,304
- Issue date Nov 9, 1971
- H01 - BASIC ELECTRIC ELEMENTS

Gp III-V liquid phase epitaxy

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for making III-Nitride laser and detection device

Method of manufacturing a light emitting diode

Method of manufacturing green light emitting diode

Method for producing a semiconductor laser device

Semiconductor light-emitting device and method of manufacturing the...

Material for light emitting element and method for crystal growth t...

Solution growth of lattice mismatched and solubility mismatched het...

Semiconductor light-emitting device and method of manufacturing the...

Interrupted liquid phase epitaxy process

Growth of semi-insulating indium phosphide by liquid phase epitaxy

Method for generating a strip waveguide

Method of manufacturing Group III-V compound semiconductor solar ba...

Manufacturing green light emitting diodes

Integrated quantum well lasers for wavelength division multiplexing

Semiconductor substrate and method for manufacturing semiconductor...

Three-terminal ternary III-V multicolor solar cells and process of...

Gallium phosphide photodetector having an as-grown surface and prod...

Reduction of dislocations in multilayer structures of zinc-blend ma...

Semiconductor light-emitting diode and method for producing same

Stress reduction in AlGaAs-AlGaAsP multilayer structures

Photocathodes

3737737

3619304