Graded energy gap

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CPC
Y10S148/067

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/067Graded energy gap

Industries

Patents Grantslast 30 patents

Information Patent Grant
Low defect density/arbitrary lattice constant heteroepitaxial layers
- Patent number 5,810,924
- Issue date Sep 22, 1998
- International Business Machines Corporation
- Francoise Kolmer Legoues
- G02 - OPTICS
Information Patent Grant
Low defect density/arbitrary lattice constant heteroepitaxial layers
- Patent number 5,659,187
- Issue date Aug 19, 1997
- International Business Machines Corporation
- Francoise Kolmer Legoues
- G02 - OPTICS
Information Patent Grant
Method of making a gallium arsenide phosphide-, mixed crystal-epita...
- Patent number 4,968,642
- Issue date Nov 6, 1990
- Mitsubishi Chemical Industries, Ltd.
- Hisanori Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material for light emitting element and method for crystal growth t...
- Patent number 4,944,811
- Issue date Jul 31, 1990
- Tokuzo Sukegawa
- Tokuzo Sukegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium arsenide phosphide mixed crystal epitaxial wafer with a gra...
- Patent number 4,865,655
- Issue date Sep 12, 1989
- Mitsubishi Monsanto Chemical Co., Ltd.
- Hisanori Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on...
- Patent number 4,861,393
- Issue date Aug 29, 1989
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- John C. Bean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor having a base region of germanium
- Patent number 4,716,445
- Issue date Dec 29, 1987
- NEC Corporation
- Jun'ichi Sone
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
I.sup.2 L heterostructure bipolar transistors and method of making...
- Patent number 4,644,381
- Issue date Feb 17, 1987
- Siemens Corporate Research and Support, Inc.
- Chan-Long Shieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of lattice-graded epilayers
- Patent number 4,548,658
- Issue date Oct 22, 1985
- Melvin S. Cook
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for making a heterojunction source-drain insulated gate fie...
- Patent number 4,468,851
- Issue date Sep 4, 1984
- The United States of America as represented by the Secretary of the Navy
- Herman H. Wieder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heteroepitaxy of germanium silicon on silicon utilizing alloying co...
- Patent number 4,357,183
- Issue date Nov 2, 1982
- Massachusetts Institute of Technology
- John C. C. Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition of solid semiconductor compositions and novel semiconduc...
- Patent number 4,213,781
- Issue date Jul 22, 1980
- Westinghouse Electric Corp.
- Alexander J. Noreika
- C30 - CRYSTAL GROWTH
Information Patent Grant
Solar energy device
- Patent number 4,166,880
- Issue date Sep 4, 1979
- Solamat Incorporated
- Joseph J. Loferski
- F24 - HEATING RANGES VENTILATING
Information Patent Grant
Method for making thin film III-V compound semiconductors for solar...
- Patent number 4,159,354
- Issue date Jun 26, 1979
- Arthur G. Milnes
- C30 - CRYSTAL GROWTH
Information Patent Grant
Continuous process for fabricating solar cells and the product prod...
- Patent number 4,152,535
- Issue date May 1, 1979
- The Boeing Company
- Czeslaw Deminet
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making semiconductor superlattices free of misfit disloca...
- Patent number 4,088,515
- Issue date May 9, 1978
- International Business Machines Corporation
- A. Eugene Blakeslee
- C30 - CRYSTAL GROWTH
Information Patent Grant
High speed infrared detector
- Patent number 4,053,919
- Issue date Oct 11, 1977
- The United States of America as represented by the Secretary of the Air Force
- Austin M. Andrews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an epitaxial growth layer of GaAs.sub.1-x P.sub.x...
- Patent number 4,007,074
- Issue date Feb 8, 1977
- Hitachi, Ltd.
- Masahiko Ogirima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor epitaxial method for depositing gallium arsenide phosphide on...
- Patent number 4,000,020
- Issue date Dec 28, 1976
- Texas Instruments Incorporated
- William Wesley Gartman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductors for solar cells
- Patent number 3,993,533
- Issue date Nov 23, 1976
- Carnegie Mellon University
- Arthur G. Milnes
- C30 - CRYSTAL GROWTH
Information Patent Grant
Quantum effects in heterostructure lasers
- Patent number 3,982,207
- Issue date Sep 21, 1976
- Bell Telephone Laboratories, Incorporated
- Raymond Dingle
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Deposition of solid semiconductor compositions and novel semiconduc...
- Patent number 3,979,271
- Issue date Sep 7, 1976
- Westinghouse Electric Corporation
- Alexander J. Noreika
- C30 - CRYSTAL GROWTH
Information Patent Grant
Buried-heterostructure diode injection laser
- Patent number 3,978,428
- Issue date Aug 31, 1976
- Xerox Corporation
- Robert D. Burnham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium phosphide photodetector having an as-grown surface and prod...
- Patent number 3,976,872
- Issue date Aug 24, 1976
- Honeywell Inc.
- Paul E. Petersen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for production of III-V compound epitaxial crystals
- Patent number 3,975,218
- Issue date Aug 17, 1976
- Semimetals, Inc.
- Robert A. Ruehrwein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing by epitaxy from the vapor phase a material on sub...
- Patent number 3,966,513
- Issue date Jun 29, 1976
- U.S. Philips Corporation
- Jean Philippe Hallais
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction transistor with linearly graded impurity concentration in...
- Patent number 3,964,089
- Issue date Jun 15, 1976
- Bell Telephone Laboratories, Incorporated
- Hin-Chiu Poon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two stage heteroepitaxial deposition process for GaP/Si
- Patent number 3,963,538
- Issue date Jun 15, 1976
- International Business Machines Corporation
- Robert W. Broadie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two stage heteroepitaxial deposition process for GaAsP/Si LED's
- Patent number 3,963,539
- Issue date Jun 15, 1976
- International Business Machines Corporation
- Bernard M. Kemlage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of producing semiconductor laser device
- Patent number 3,961,996
- Issue date Jun 8, 1976
- Mitsubishi Denki Kabushiki Kaisha
- Hirofumi Namizaki
- H01 - BASIC ELECTRIC ELEMENTS

Graded energy gap

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Low defect density/arbitrary lattice constant heteroepitaxial layers

Low defect density/arbitrary lattice constant heteroepitaxial layers

Method of making a gallium arsenide phosphide-, mixed crystal-epita...

Material for light emitting element and method for crystal growth t...

Gallium arsenide phosphide mixed crystal epitaxial wafer with a gra...

Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on...

Heterojunction bipolar transistor having a base region of germanium

I.sup.2 L heterostructure bipolar transistors and method of making...

Growth of lattice-graded epilayers

Process for making a heterojunction source-drain insulated gate fie...

Heteroepitaxy of germanium silicon on silicon utilizing alloying co...

Deposition of solid semiconductor compositions and novel semiconduc...

Solar energy device

Method for making thin film III-V compound semiconductors for solar...

Continuous process for fabricating solar cells and the product prod...

Method of making semiconductor superlattices free of misfit disloca...

High speed infrared detector

Method of making an epitaxial growth layer of GaAs.sub.1-x P.sub.x...

Vapor epitaxial method for depositing gallium arsenide phosphide on...

Method for making semiconductors for solar cells

Quantum effects in heterostructure lasers

Deposition of solid semiconductor compositions and novel semiconduc...

Buried-heterostructure diode injection laser

Gallium phosphide photodetector having an as-grown surface and prod...

Process for production of III-V compound epitaxial crystals

Method of growing by epitaxy from the vapor phase a material on sub...

Junction transistor with linearly graded impurity concentration in...

Two stage heteroepitaxial deposition process for GaP/Si

Two stage heteroepitaxial deposition process for GaAsP/Si LED's

Process of producing semiconductor laser device