Graphoepitaxy or surface modification to enhance epitaxy

Industry

CPC
Y10S117/913

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes non-coating apparatus therefor

Current Industry

Y10S117/913Graphoepitaxy or surface modification to enhance epitaxy

Industries

Patents Grantslast 30 patents

Information Patent Grant
Methods for enhancing P-type doping in III-V semiconductor films
- Patent number 9,721,810
- Issue date Aug 1, 2017
- University of Utah Research Foundation
- Feng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Base material with single-crystal silicon carbide film, method of p...
- Patent number 8,906,487
- Issue date Dec 9, 2014
- Seiko Epson Corporation
- Hiroyuki Shimada
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Free-standing (Al, Ga, In)N and parting method for forming same
- Patent number 6,958,093
- Issue date Oct 25, 2005
- Cree, Inc.
- Robert P. Vaudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layered photonic crystals
- Patent number 6,924,921
- Issue date Aug 2, 2005
- MCNC Research and Development Institute
- John South Lewis, lll
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Layer-by-layer assembly of photonic crystals
- Patent number 6,752,868
- Issue date Jun 22, 2004
- MCNC Research and Development Institute
- John South Lewis
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing semiconductor wafer method of using and uti...
- Patent number 6,656,271
- Issue date Dec 2, 2003
- Canon Kabushiki Kaisha
- Takao Yonehara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate, and method for producing the substrate,...
- Patent number 6,270,573
- Issue date Aug 7, 2001
- Matsushita Electric Industrial Co., Ltd.
- Makoto Kitabatake
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of deposition of a single-crystal silicon region
- Patent number 6,165,265
- Issue date Dec 26, 2000
- STMicroelectronics S.A.
- Yvon Gris
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thermal mismatch compensation to produce free standing substrates b...
- Patent number 6,146,457
- Issue date Nov 14, 2000
- CBL Technologies, Inc.
- Glenn S. Solomon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for and products of growth of single-crystal on arrayed nuc...
- Patent number 6,110,278
- Issue date Aug 29, 2000
- Arjun N. Saxena
- C30 - CRYSTAL GROWTH
Information Patent Grant
Advanced technique to grow single crystal films on amorphous and/or...
- Patent number 6,103,019
- Issue date Aug 15, 2000
- Arjun Saxena
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of and apparatus for producing single-crystalline diamond of...
- Patent number 6,096,129
- Issue date Aug 1, 2000
- Sumitomo Electric Industries, Ltd.
- Hirohisa Saito
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing Group III atomic layer
- Patent number 6,036,773
- Issue date Mar 14, 2000
- Agency of Industrial Science & Technology, Ministry of International Trade &...
- Xue-Lun Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate and method of treating semiconductor substrate
- Patent number 6,010,797
- Issue date Jan 4, 2000
- Kabushiki Kaisha Toshiba
- Hiroshi Tomita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for forming SOI structure
- Patent number 5,948,162
- Issue date Sep 7, 1999
- Rohm Co., Ltd.
- Tomofumi Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Elimination of thermal mismatch defects in epitaxially deposited fi...
- Patent number 5,919,305
- Issue date Jul 6, 1999
- CBL Technologies, Inc.
- Glenn S. Solomon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device epitaxial layer lateral growth rate control me...
- Patent number 5,865,888
- Issue date Feb 2, 1999
- Korea Institute of Science and Technology
- Suk-Ki Min
- C30 - CRYSTAL GROWTH
Information Patent Grant
Composite structure and method for the production thereof
- Patent number 5,861,058
- Issue date Jan 19, 1999
- Daimler-Benz Aktiengesellschaft
- Hans-Juergen Fuesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating high-dielectric constant oxides on semiconductors using...
- Patent number 5,825,055
- Issue date Oct 20, 1998
- Texas Instruments Incorporated
- Scott R. Summerfelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and method of treating semiconductor substrate
- Patent number 5,817,174
- Issue date Oct 6, 1998
- Kabushiki Kaisha Toshiba
- Hiroshi Tomita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for forming a pattern of nucleation sites
- Patent number 5,792,270
- Issue date Aug 11, 1998
- Arjun Saxena
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for forming microstructure body
- Patent number 5,746,826
- Issue date May 5, 1998
- Hitachi, Ltd.
- Tsuyoshi Hasegawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of growing a crystal of a compound semiconductor at a low te...
- Patent number 5,741,360
- Issue date Apr 21, 1998
- Optoelectronics Technology Research Corporation
- Shigeo Goto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing microstructure pattern of molecular materia...
- Patent number 5,738,720
- Issue date Apr 14, 1998
- The University of Tokyo
- Toshihiro Shimada
- G02 - OPTICS
Information Patent Grant
Method of forming crystalline compound semiconductor film
- Patent number 5,718,761
- Issue date Feb 17, 1998
- Canon Kabushiki Kaisha
- Hiroyuki Tokunaga
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing sheets of crystalline material and devices made...
- Patent number 5,676,752
- Issue date Oct 14, 1997
- Massachusetts Institute of Technology
- Carl O. Bozler
- C30 - CRYSTAL GROWTH
Information Patent Grant
Diamond electronic device and process for producing the same
- Patent number 5,632,812
- Issue date May 27, 1997
- Canon Kabushiki Kaisha
- Keiji Hirabayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device and method of fabrication
- Patent number 5,591,666
- Issue date Jan 7, 1997
- Motorola
- Kumar Shiralagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing sheets of crystalline material and devices made...
- Patent number 5,588,994
- Issue date Dec 31, 1996
- Massachusetts Institute of Technology
- Carl O. Bozler
- C30 - CRYSTAL GROWTH
Information Patent Grant
Microprobe, preparation thereof and electronic device by use of sai...
- Patent number 5,482,002
- Issue date Jan 9, 1996
- Canon Kabushiki Kaisha
- Hisaaki Kawade
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
BASE MATERIAL WITH SINGLE-CRYSTAL SILICON CARBIDE FILM, METHOD OF P...
- Publication number 20120021173
- Publication date Jan 26, 2012
- SEIKO EPSON CORPORATION
- Hiroyuki SHIMADA
- C30 - CRYSTAL GROWTH
Information Patent Application
Layered photonic crystals
- Publication number 20040134414
- Publication date Jul 15, 2004
- John South Lewis
- C30 - CRYSTAL GROWTH
Information Patent Application
LAYER-BY-LAYER ASSEMBLY OF PHOTONIC CRYSTALS
- Publication number 20040020423
- Publication date Feb 5, 2004
- John South Lewis
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR WAFER METHOD OF USING AND UTI...
- Publication number 20030159644
- Publication date Aug 28, 2003
- TAKAO YONEHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Free-standing (Al, Ga, In)N and parting method for forming same
- Publication number 20020068201
- Publication date Jun 6, 2002
- Robert P. Vaudo
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of deposition of a single-crystal silicon region
- Publication number 20020053316
- Publication date May 9, 2002
- Yvon Gris
- C30 - CRYSTAL GROWTH

Graphoepitaxy or surface modification to enhance epitaxy

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods for enhancing P-type doping in III-V semiconductor films

Base material with single-crystal silicon carbide film, method of p...

Free-standing (Al, Ga, In)N and parting method for forming same

Layered photonic crystals

Layer-by-layer assembly of photonic crystals

Method of manufacturing semiconductor wafer method of using and uti...

Silicon carbide substrate, and method for producing the substrate,...

Method of deposition of a single-crystal silicon region

Thermal mismatch compensation to produce free standing substrates b...

Methods for and products of growth of single-crystal on arrayed nuc...

Advanced technique to grow single crystal films on amorphous and/or...

Method of and apparatus for producing single-crystalline diamond of...

Method for growing Group III atomic layer

Semiconductor substrate and method of treating semiconductor substrate

Method for forming SOI structure

Elimination of thermal mismatch defects in epitaxially deposited fi...

Semiconductor device epitaxial layer lateral growth rate control me...

Composite structure and method for the production thereof

Fabricating high-dielectric constant oxides on semiconductors using...

Semiconductor substrate and method of treating semiconductor substrate

Apparatus for forming a pattern of nucleation sites

Method and apparatus for forming microstructure body

Method of growing a crystal of a compound semiconductor at a low te...

Method of manufacturing microstructure pattern of molecular materia...

Method of forming crystalline compound semiconductor film

Method of producing sheets of crystalline material and devices made...

Diamond electronic device and process for producing the same

Semiconductor device and method of fabrication

Method of producing sheets of crystalline material and devices made...

Microprobe, preparation thereof and electronic device by use of sai...

Patents Applicationslast 30 patents

BASE MATERIAL WITH SINGLE-CRYSTAL SILICON CARBIDE FILM, METHOD OF P...

Layered photonic crystals

LAYER-BY-LAYER ASSEMBLY OF PHOTONIC CRYSTALS

METHOD OF MANUFACTURING SEMICONDUCTOR WAFER METHOD OF USING AND UTI...

Free-standing (Al, Ga, In)N and parting method for forming same

Method of deposition of a single-crystal silicon region