Claims
- 1. A method of forming a crystalline semiconductor film including a group II element and a group VI element in a crystal forming space housing a substrate, comprising the steps of:
- (a) providing said substrate having a non-nucleation surface and an adjacent nucleation surface, wherein said nucleation surface is formed by ion-implanting the non-nucleation surface in an amount of 1.times.10.sup.15 cm.sup.-2 or more ions, said nucleation surface comprising an amorphous material and having a surface area up to about 16 .mu.m.sup.2 so as to permit only a single nucleus to grow and having a larger nucleation density than the nucleation density of the non-nucleation surface;
- (b) introducing into a mixing space (i) a gaseous organometallic compound for supplying an element belonging to group VI of the Periodic Table, said organometallic compound being represented by the formula R.sub.1 --X.sub.n --R.sub.2 wherein n is an integer of 2 or more; R.sub.1 and R.sub.2 represent alkyl; and X is S, Se, or Te; and (ii) a gaseous compound for supplying an element belonging to group II of the Periodic Table;
- (c) mixing and reacting said gaseous organometallic compound and said gaseous compound in order to form a stable intermediate;
- (d) forming said single nucleus on said nucleation surface of said substrate with said stable intermediate; and
- (e) growing said crystalline film on said substrate by gaseous metal organic compound chemical vapor deposition.
- 2. The method according to claim 1, wherein the gaseous compound for supplying an element belonging to group II of the Periodic Table is an organometallic compound.
- 3. The process according to claim 1, wherein the nucleation surface is less than about 2 microns.
- 4. The process according to claim 2, wherein the nucleation surface is less than about 2 microns.
Priority Claims (1)
Number |
Date |
Country |
Kind |
62-209455 |
Aug 1987 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 08/137,488 filed Oct. 18, 1993, now abandoned, which is a continuation of application Ser. No. 07/870,115 filed Apr. 17, 1992, now abandoned, which is a continuation of application Ser. No. 07/689,105 filed Apr. 23, 1991, now abandoned, which is a continuation of application Ser. No. 07/234,748 filed Aug. 22, 1988, which is now abandoned.
US Referenced Citations (10)
Foreign Referenced Citations (1)
Number |
Date |
Country |
60-215596 |
Oct 1985 |
JPX |
Non-Patent Literature Citations (5)
Entry |
Jastrezbski, "SCI By CVD: Epitaxial Lateral Overgrowth (ELC) Process Review" Journal of Crystal Growth, vol. 63 (1983) pp. 493-526. |
Kisker et al. "Low-Temperature Organometallic Vapor Phase Epitaxial Growth of CDTE . . . ", Applied Physics Letters, vol. 50(23) Jun. 8, 1987, pp. 1681-1683. |
Claussen et al, "The Nucleation of CVD Silicon on SiO.sub.2 and Si.sub.3 N.sub.4 Substrates" J. Electrochemical Society; Solid State Science and Technology, Jan. 1980 pp. 194-202. |
Bloem et al., "Nucleation and Growth of Silicon Films By Chemical Vapour Deposition," Philips Technical Review, vol. 41, 1983/84. |
P. Rai-Choudhury et al, Selective Growth of Epitaxial Silicon and Galliuim Arsenide, J. Electrochem. Soc.: Solid State Science, vol. 118, No. 1, pp. 107-110, Jan. 1971. |
Continuations (4)
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Number |
Date |
Country |
Parent |
137488 |
Oct 1993 |
|
Parent |
870115 |
Apr 1992 |
|
Parent |
689105 |
Apr 1991 |
|
Parent |
234748 |
Aug 1988 |
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