Group 13/15 materials

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H01L21/02455

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02455Group 13/15 materials

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor substrate and method of manufacturing thereof
- Patent number 11,749,526
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- I-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing diamond substrate
- Patent number 11,699,587
- Issue date Jul 11, 2023
- Korea Polytechnic University Industry Academic Cooperation Foundation
- Ok Hyun Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, semiconductor device, and method for formi...
- Patent number 11,670,505
- Issue date Jun 6, 2023
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V or II-VI compound semiconductor films on graphitic substrates
- Patent number 11,261,537
- Issue date Mar 1, 2022
- Norwegian University of Science and Technology (NTNU)
- Bjørn-Ove Fimland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming III-V on insulator structure on semiconductor sub...
- Patent number 11,164,940
- Issue date Nov 2, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-crystal rare earth oxide grown on III-V compound
- Patent number 11,081,339
- Issue date Aug 3, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuanhsiung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for printing wide bandgap semiconductor materials
- Patent number 11,056,338
- Issue date Jul 6, 2021
- The Johns Hopkins University
- Jarod C. Gagnon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor structure comprising III-N material
- Patent number 11,031,492
- Issue date Jun 8, 2021
- Exagan
- David Schenk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layers having composite structures
- Patent number 10,916,422
- Issue date Feb 9, 2021
- Xiamen Changelight Co., Ltd.
- Kaixuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods of dislocation filtering for layer transfer
- Patent number 10,903,073
- Issue date Jan 26, 2021
- Massachusetts Institute of Technology
- Jeehwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High percentage silicon germanium graded buffer layers with lattice...
- Patent number 10,741,387
- Issue date Aug 11, 2020
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming III-V on insulator structure on semiconductor sub...
- Patent number 10,665,666
- Issue date May 26, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pseudomorphic InGaAs on GaAs for gate-all-around transistors
- Patent number 10,651,288
- Issue date May 12, 2020
- Intel Corporation
- Chandra S. Mohapatra
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fabrication of compound semiconductor structures
- Patent number 10,529,562
- Issue date Jan 7, 2020
- International Business Machines Corporation
- Daniele Caimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V or II-VI compound semiconductor films on graphitic substrates
- Patent number 10,472,734
- Issue date Nov 12, 2019
- Norwegian University of Science and Technology (NTNU)
- Bjørn-Ove Fimland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress assisted wet and dry epitaxial lift off
- Patent number 10,460,948
- Issue date Oct 29, 2019
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistors with heterojunction dopant diffu...
- Patent number 10,446,685
- Issue date Oct 15, 2019
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing native oxide and residue from a III-V group con...
- Patent number 10,438,796
- Issue date Oct 8, 2019
- Applied Materials, Inc.
- Chun Yan
- B08 - CLEANING
Information Patent Grant
Nanostructured substrates for improved lift-off of III-V thin films
- Patent number 10,403,783
- Issue date Sep 3, 2019
- Arizona Board of Regents on behalf of Arizona State University
- Alan Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistors with counter-doped dopant diffus...
- Patent number 10,388,764
- Issue date Aug 20, 2019
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-crystal rare earth oxide grown on III-V compound
- Patent number 10,283,349
- Issue date May 7, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuanhsiung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of compound semiconductor structures
- Patent number 10,249,492
- Issue date Apr 2, 2019
- International Business Machines Corporation
- Daniele Caimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layers having composite structures
- Patent number 10,121,656
- Issue date Nov 6, 2018
- Xiamen Changelight Co., Ltd.
- Kaixuan Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Selective nanoscale growth of lattice mismatched materials
- Patent number 10,109,480
- Issue date Oct 23, 2018
- STC.UNM
- Seung-Chang Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Strained group IV channels
- Patent number 9,876,080
- Issue date Jan 23, 2018
- Imec VZW
- Bernardette Kunert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Utilization of angled trench for effective aspect ratio trapping of...
- Patent number 9,799,531
- Issue date Oct 24, 2017
- Applied Materials, Inc.
- Swaminathan T. Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming group III/V conformal layers on silicon substrates
- Patent number 9,799,737
- Issue date Oct 24, 2017
- Applied Materials, Inc.
- Xinyu Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming hetero-layers with reduced surface roughness and...
- Patent number 9,711,591
- Issue date Jul 18, 2017
- Intel Corporation
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective nanoscale growth of lattice mismatched materials
- Patent number 9,685,324
- Issue date Jun 20, 2017
- STC.UNM
- Seung-Chang Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Conversion of strain-inducing buffer to electrical insulator
- Patent number 9,673,302
- Issue date Jun 6, 2017
- Intel Corporation
- Annalisa Cappellani
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF
- Publication number 20220367174
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- I-Sheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING DIAMOND SUBSTRATE
- Publication number 20220285154
- Publication date Sep 8, 2022
- KOREA POLYTECHNIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION
- Ok Hyun NAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR FORMI...
- Publication number 20220068631
- Publication date Mar 3, 2022
- Vanguard International Semiconductor Corporation
- Chih-Yen CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE COMPRISING III-N MATERIAL
- Publication number 20200185515
- Publication date Jun 11, 2020
- Exagan
- David Schenk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING III-V ON INSULATOR STRUCTURE ON SEMICONDUCTOR SUB...
- Publication number 20200176558
- Publication date Jun 4, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V OR II-VI COMPOUND SEMICONDUCTOR FILMS ON GRAPHITIC SUBSTRATES
- Publication number 20200141027
- Publication date May 7, 2020
- NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)
- Bjørn-Ove Fimland
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRINTING WIDE BANDGAP SEMICONDUCTOR MATERIALS
- Publication number 20200118816
- Publication date Apr 16, 2020
- The Johns Hopkins University
- Jarod C. Gagnon
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL RARE EARTH OXIDE GROWN ON III-V COMPOUND
- Publication number 20190252184
- Publication date Aug 15, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuanhsiung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF COMPOUND SEMICONDUCTOR STRUCTURES
- Publication number 20190228965
- Publication date Jul 25, 2019
- International Business Machines Corporation
- Daniele Caimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING III-V ON INSULATOR STRUCTURE ON SEMICONDUCTOR SUB...
- Publication number 20190181220
- Publication date Jun 13, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYERS HAVING COMPOSITE STRUCTURES
- Publication number 20190088476
- Publication date Mar 21, 2019
- XIAMEN CHANGELIGHT CO., LTD.
- Kaixuan Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTORS WITH COUNTER-DOPED DOPANT DIFFUS...
- Publication number 20180254332
- Publication date Sep 6, 2018
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTORS WITH HETEROJUNCTION DOPANT DIFFU...
- Publication number 20180248028
- Publication date Aug 30, 2018
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE NANOSCALE GROWTH OF LATTICE MISMATCHED MATERIALS
- Publication number 20170256405
- Publication date Sep 7, 2017
- STC.UNM
- Seung-Chang Lee
- C30 - CRYSTAL GROWTH
Information Patent Application
CONVERSION OF STRAIN-INDUCING BUFFER TO ELECTRICAL INSULATOR
- Publication number 20170040438
- Publication date Feb 9, 2017
- Intel Corporation
- ANNALISA CAPPELLANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained Group IV Channels
- Publication number 20170033183
- Publication date Feb 2, 2017
- IMEC vzw
- Bernardette Kunert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND FINFET DEVICE INCLUDING OXIDIZED III-V FIN ISOLATOR
- Publication number 20160379820
- Publication date Dec 29, 2016
- International Business Machines Corporation
- Szu-Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V OR II-VI COMPOUND SEMICONDUCTOR FILMS ON GRAPHITIC SUBSTRATES
- Publication number 20160369423
- Publication date Dec 22, 2016
- NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)
- Bjøm-Ove Fimland
- C30 - CRYSTAL GROWTH
Information Patent Application
UTLIZATION OF ANGLED TRENCH FOR EFFECTIVE ASPECT RATIO TRAPPING OF...
- Publication number 20160307774
- Publication date Oct 20, 2016
- Applied Materials, Inc.
- Swaminathan T. SRINIVASAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TYPE III-V AND TYPE IV SEMICONDUCTOR DEVICE FORMATION
- Publication number 20160189959
- Publication date Jun 30, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED STACKED NANOSHEET FETS AND/OR QUANTUM WELL STACKED NANOSHEET
- Publication number 20160111337
- Publication date Apr 21, 2016
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM-CONTAINING SEMICONDUCTOR DEVICE AND METHOD OF FORMING
- Publication number 20150340228
- Publication date Nov 26, 2015
- TOKYO ELECTRON LIMITED
- Kandabara N. Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid III-V Technology to Support Multiple Supply Voltages and Off...
- Publication number 20150287600
- Publication date Oct 8, 2015
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple-Threshold Voltage Devices and Method of Forming Same
- Publication number 20150279679
- Publication date Oct 1, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACTS
- Publication number 20150243773
- Publication date Aug 27, 2015
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE NANOSCALE GROWTH OF LATTICE MISMATCHED MATERIALS
- Publication number 20150145001
- Publication date May 28, 2015
- SEUNG-CHANG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER, METHOD OF PRODUCING A SEMICONDUCTOR WAFER AND...
- Publication number 20150137317
- Publication date May 21, 2015
- Sumitomo Chemical Company, Limited
- Takenori OSADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIRTUAL SUBSTRATES BY HAVING THICK, HIGHLY RELAXED METAMORPHIC BUFF...
- Publication number 20140339505
- Publication date Nov 20, 2014
- Wisconsin Alumni Research Foundation
- Thomas F. Kuech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V Device with a Selectively Modified Impurity Concentration
- Publication number 20140339686
- Publication date Nov 20, 2014
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V Device with a Selectively Reduced Impurity Concentration
- Publication number 20140339605
- Publication date Nov 20, 2014
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS

Group 13/15 materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor substrate and method of manufacturing thereof

Method for manufacturing diamond substrate

Semiconductor substrate, semiconductor device, and method for formi...

III-V or II-VI compound semiconductor films on graphitic substrates

Method of forming III-V on insulator structure on semiconductor sub...

Single-crystal rare earth oxide grown on III-V compound

Method for printing wide bandgap semiconductor materials

Semiconductor structure comprising III-N material

Buffer layers having composite structures

Systems and methods of dislocation filtering for layer transfer

High percentage silicon germanium graded buffer layers with lattice...

Method of forming III-V on insulator structure on semiconductor sub...

Pseudomorphic InGaAs on GaAs for gate-all-around transistors

Fabrication of compound semiconductor structures

III-V or II-VI compound semiconductor films on graphitic substrates

Stress assisted wet and dry epitaxial lift off

High-electron-mobility transistors with heterojunction dopant diffu...

Method for removing native oxide and residue from a III-V group con...

Nanostructured substrates for improved lift-off of III-V thin films

High-electron-mobility transistors with counter-doped dopant diffus...

Single-crystal rare earth oxide grown on III-V compound

Fabrication of compound semiconductor structures

Buffer layers having composite structures

Selective nanoscale growth of lattice mismatched materials

Strained group IV channels

Utilization of angled trench for effective aspect ratio trapping of...

Method for forming group III/V conformal layers on silicon substrates

Methods of forming hetero-layers with reduced surface roughness and...

Selective nanoscale growth of lattice mismatched materials

Conversion of strain-inducing buffer to electrical insulator

Patents Applicationslast 30 patents

SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF

METHOD FOR MANUFACTURING DIAMOND SUBSTRATE

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR FORMI...

SEMICONDUCTOR STRUCTURE COMPRISING III-N MATERIAL

METHOD OF FORMING III-V ON INSULATOR STRUCTURE ON SEMICONDUCTOR SUB...

III-V OR II-VI COMPOUND SEMICONDUCTOR FILMS ON GRAPHITIC SUBSTRATES

METHOD FOR PRINTING WIDE BANDGAP SEMICONDUCTOR MATERIALS

SINGLE-CRYSTAL RARE EARTH OXIDE GROWN ON III-V COMPOUND

FABRICATION OF COMPOUND SEMICONDUCTOR STRUCTURES

METHOD OF FORMING III-V ON INSULATOR STRUCTURE ON SEMICONDUCTOR SUB...

BUFFER LAYERS HAVING COMPOSITE STRUCTURES

HIGH-ELECTRON-MOBILITY TRANSISTORS WITH COUNTER-DOPED DOPANT DIFFUS...

HIGH-ELECTRON-MOBILITY TRANSISTORS WITH HETEROJUNCTION DOPANT DIFFU...

SELECTIVE NANOSCALE GROWTH OF LATTICE MISMATCHED MATERIALS

CONVERSION OF STRAIN-INDUCING BUFFER TO ELECTRICAL INSULATOR

Strained Group IV Channels

COMPOUND FINFET DEVICE INCLUDING OXIDIZED III-V FIN ISOLATOR

III-V OR II-VI COMPOUND SEMICONDUCTOR FILMS ON GRAPHITIC SUBSTRATES

UTLIZATION OF ANGLED TRENCH FOR EFFECTIVE ASPECT RATIO TRAPPING OF...

TYPE III-V AND TYPE IV SEMICONDUCTOR DEVICE FORMATION

STRAINED STACKED NANOSHEET FETS AND/OR QUANTUM WELL STACKED NANOSHEET

GERMANIUM-CONTAINING SEMICONDUCTOR DEVICE AND METHOD OF FORMING

Hybrid III-V Technology to Support Multiple Supply Voltages and Off...

Multiple-Threshold Voltage Devices and Method of Forming Same

III-V SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACTS

SELECTIVE NANOSCALE GROWTH OF LATTICE MISMATCHED MATERIALS

SEMICONDUCTOR WAFER, METHOD OF PRODUCING A SEMICONDUCTOR WAFER AND...

VIRTUAL SUBSTRATES BY HAVING THICK, HIGHLY RELAXED METAMORPHIC BUFF...

Group III-V Device with a Selectively Modified Impurity Concentration

Group III-V Device with a Selectively Reduced Impurity Concentration