Gunn diodes

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H01L47/026

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L47/00Bulk negative resistance effect devices

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H01L47/026Gunn diodes

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Resonant filter using mm wave cavity
- Patent number 11,309,837
- Issue date Apr 19, 2022
- Innovative Micro Technology
- Christopher S. Gudeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas sensor using mm wave cavity
- Patent number 10,804,850
- Issue date Oct 13, 2020
- Innovative Micro Technology
- Christopher S. Gudeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-negative differential resistance device and method of manufac...
- Patent number 10,566,389
- Issue date Feb 18, 2020
- Research & Business Foundation Sungkyunkwan University
- Jin Hong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rectifier for electromagnetic radiation
- Patent number 10,297,752
- Issue date May 21, 2019
- Nanohmics, Inc.
- Chris W. Mann
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Real-space charge-transfer device and method thereof
- Patent number 9,385,321
- Issue date Jul 5, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Don D. Smith
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Layer sequence for Gunn diode
- Patent number 7,326,953
- Issue date Feb 5, 2008
- Forschungszentrum Julich GmbH
- Arnold Förster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material devices and methods of forming the same
- Patent number 7,233,028
- Issue date Jun 19, 2007
- Nitronex Corporation
- T. Warren Weeks
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Gunn diode and method of manufacturing the same
- Patent number 6,686,647
- Issue date Feb 3, 2004
- New Japan Radio Co., Ltd.,
- Chikao Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material devices and methods including backside vias
- Patent number 6,611,002
- Issue date Aug 26, 2003
- Nitronex Corporation
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gunn diode, NRD guide Gunn oscillator, fabricating method of Gunn d...
- Patent number 6,514,832
- Issue date Feb 4, 2003
- New Japan Radio Co., Ltd.
- Atsushi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gunn diode, NRD guide gunn oscillator, fabricating method of gunn d...
- Patent number 6,426,511
- Issue date Jul 30, 2002
- New Japan Radio Co., Ltd.
- Atsushi Nakagawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
NRD guide Gunn oscillator
- Patent number 6,369,663
- Issue date Apr 9, 2002
- New Japan Radio Co., Ltd.
- Atsushi Nakagawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Gunn diode, NRD guide gunn oscillator, fabricating method of gunn d...
- Patent number 6,344,658
- Issue date Feb 5, 2002
- New Japan Radio Co., Ltd.
- Atsushi Nakagawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Gunn diode having a graded aluminum gallium arsenide active layer a...
- Patent number 6,111,265
- Issue date Aug 29, 2000
- Sharp Kabushiki Kaisha
- John Kevin Twynam
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Transferred electron effect device
- Patent number 5,675,157
- Issue date Oct 7, 1997
- U.S. Philips Corporation
- Stephen J. Battersby
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium phosphide Gunn diode with dopant gradient
- Patent number 5,311,034
- Issue date May 10, 1994
- Nippon Mining Co., Ltd.
- Hiroshi Kurita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transferred electron effect device
- Patent number 5,258,624
- Issue date Nov 2, 1993
- U.S. Philips Corp.
- Stephen J. Battersby
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable-frequency Gunn diodes fabrication with focused ion beams
- Patent number 5,256,579
- Issue date Oct 26, 1993
- Massachusetts Institute of Technology
- Henri Lezec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hot electron injector Gunn device with anode heat sink
- Patent number 5,250,815
- Issue date Oct 5, 1993
- U.S. Philips Corp.
- Stephen J. Battersby
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of gunn diode semiconductor devices
- Patent number 5,145,809
- Issue date Sep 8, 1992
- Millitech Corporation
- David K. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High frequency, frequency multiplier using parallel Gunn diodes
- Patent number 4,978,928
- Issue date Dec 18, 1990
- The United States of America as represented by the Secretary of the Navy
- Mario Ancona
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Transferred electron device with periodic ballistic regions
- Patent number 4,879,581
- Issue date Nov 7, 1989
- Thomson-CSF
- Felix Diamand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices
- Patent number 4,801,982
- Issue date Jan 31, 1989
- The General Electric Company, p.l.c.
- Nigel R. Couch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron ballistic injection and extraction for very high efficienc...
- Patent number 4,649,405
- Issue date Mar 10, 1987
- Cornell Research Foundation, Inc.
- Lester F. Eastman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar doped barrier transferred electron oscillator
- Patent number 4,539,581
- Issue date Sep 3, 1985
- The United States of America as represented by the Secretary of the Army
- Roger J. Malik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transferred electron devices
- Patent number 4,417,261
- Issue date Nov 22, 1983
- The Secretary of State for Defence in Her Britannic Majesty's Government of t...
- Kenneth W. Gray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effects semiconductor devices
- Patent number 4,331,967
- Issue date May 25, 1982
- Nippon Telegraph and Telephone Public Corp.
- Katsuhiko Kurumada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state microwave devices with small active contact and large p...
- Patent number 4,238,763
- Issue date Dec 9, 1980
- National Research Development Corporation
- Kenneth W. Gray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising projecting contact layers
- Patent number 4,189,342
- Issue date Feb 19, 1980
- U.S. Philips Corporation
- Hendrikus G. Kock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hyperfrequency device with gunn effect
- Patent number 4,134,122
- Issue date Jan 9, 1979
- Thomson-CSF
- Paul C. Moutou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TERAHERTZ GUNN OSCILLATOR USING GALLIUM NITRIDE
- Publication number 20230163724
- Publication date May 25, 2023
- Sixpoint Materials, Inc.
- TADAO HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gunn diode and method of manufacturing the same
- Publication number 20220344587
- Publication date Oct 27, 2022
- TECHNISCHE UNIVERSITAT DARMSTADT
- Oktay YILMAZOGLU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GUNN DIODE AND METHOD FOR GENERATING A TERAHERTZ RADIATION
- Publication number 20210328143
- Publication date Oct 21, 2021
- TECHNISCHE UNIVERSITAT DARMSTADT
- Oktay Yilmazoglu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
RESONANT FILTER USING MM WAVE CAVITY
- Publication number 20210083625
- Publication date Mar 18, 2021
- Innovative Micro Technology
- Christopher S. GUDEMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS SENSOR USING MM WAVE CAVITY
- Publication number 20190068120
- Publication date Feb 28, 2019
- Innovative Micro Technology
- Christopher S. GUDEMAN
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MULTI-NEGATIVE DIFFERENTIAL RESISTANCE DEVICE AND METHOD OF MANUFAC...
- Publication number 20180358412
- Publication date Dec 13, 2018
- Research & Business Foundation Sungkyunwan University
- Jin Hong PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Rectifier for Electromagnetic Radiation
- Publication number 20180040820
- Publication date Feb 8, 2018
- Chris W. Mann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REAL-SPACE CHARGE-TRANSFER DEVICE AND METHOD THEREOF
- Publication number 20160181523
- Publication date Jun 23, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Don D. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GUNN DIODE
- Publication number 20100163837
- Publication date Jul 1, 2010
- TECHNISCHE UNIVERSITAET DARMSTADT
- Oktay Yilmazoglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIAL DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20070295985
- Publication date Dec 27, 2007
- Nitronex Corporation
- T. Warren Weeks
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Method for Determining Clinical and/or Chemical Parameters in a Med...
- Publication number 20070297741
- Publication date Dec 27, 2007
- Patrick Linder
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
Spectral resistor, spectral capacitor, order-infinity resonant tank...
- Publication number 20070170910
- Publication date Jul 26, 2007
- Ming-Hoo Chang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Gunn diode
- Publication number 20060232347
- Publication date Oct 19, 2006
- E2V TECHNOLOGIES (UK) LIMITED
- Keith David Newsome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Layered construction
- Publication number 20060054928
- Publication date Mar 16, 2006
- Arnold Forster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material devices and methods of forming the same
- Publication number 20040130002
- Publication date Jul 8, 2004
- Nitronex Corporation
- T. Warren Weeks
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Gunn diode and method of manufacturing the same
- Publication number 20020185709
- Publication date Dec 12, 2002
- NEW JAPAN RADIO CO., LTD.
- Chikao Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material devices and methods including backside vias
- Publication number 20020117681
- Publication date Aug 29, 2002
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS

Gunn diodes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Resonant filter using mm wave cavity

Gas sensor using mm wave cavity

Multi-negative differential resistance device and method of manufac...

Rectifier for electromagnetic radiation

Real-space charge-transfer device and method thereof

Layer sequence for Gunn diode

Gallium nitride material devices and methods of forming the same

Gunn diode and method of manufacturing the same

Gallium nitride material devices and methods including backside vias

Gunn diode, NRD guide Gunn oscillator, fabricating method of Gunn d...

Gunn diode, NRD guide gunn oscillator, fabricating method of gunn d...

NRD guide Gunn oscillator

Gunn diode, NRD guide gunn oscillator, fabricating method of gunn d...

Gunn diode having a graded aluminum gallium arsenide active layer a...

Transferred electron effect device

Indium phosphide Gunn diode with dopant gradient

Transferred electron effect device

Tunable-frequency Gunn diodes fabrication with focused ion beams

Hot electron injector Gunn device with anode heat sink

Fabrication of gunn diode semiconductor devices

High frequency, frequency multiplier using parallel Gunn diodes

Transferred electron device with periodic ballistic regions

Electronic devices

Electron ballistic injection and extraction for very high efficienc...

Planar doped barrier transferred electron oscillator

Transferred electron devices

Field effects semiconductor devices

Solid state microwave devices with small active contact and large p...

Semiconductor device comprising projecting contact layers

Hyperfrequency device with gunn effect

Patents Applicationslast 30 patents

TERAHERTZ GUNN OSCILLATOR USING GALLIUM NITRIDE

Gunn diode and method of manufacturing the same

GUNN DIODE AND METHOD FOR GENERATING A TERAHERTZ RADIATION

RESONANT FILTER USING MM WAVE CAVITY

GAS SENSOR USING MM WAVE CAVITY

MULTI-NEGATIVE DIFFERENTIAL RESISTANCE DEVICE AND METHOD OF MANUFAC...

Rectifier for Electromagnetic Radiation

REAL-SPACE CHARGE-TRANSFER DEVICE AND METHOD THEREOF

GUNN DIODE

GALLIUM NITRIDE MATERIAL DEVICES AND METHODS OF FORMING THE SAME

Method for Determining Clinical and/or Chemical Parameters in a Med...

Spectral resistor, spectral capacitor, order-infinity resonant tank...

Gunn diode

Layered construction

Gallium nitride material devices and methods of forming the same

Gunn diode and method of manufacturing the same

Gallium nitride material devices and methods including backside vias