Gunn-effect devices or transferred electron devices

Industry

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H01L47/02

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L47/00Bulk negative resistance effect devices

Current Industry

H01L47/02Gunn-effect devices or transferred electron devices

Industries

Patents Grantslast 30 patents

Information Patent Grant
Metal-insulator-semiconductor-insulator-metal (MISIM) device, metho...
- Patent number 11,605,674
- Issue date Mar 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jenn-Gwo Hwu
- G11 - INFORMATION STORAGE
Information Patent Grant
Resonant filter using mm wave cavity
- Patent number 11,309,837
- Issue date Apr 19, 2022
- Innovative Micro Technology
- Christopher S. Gudeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insulator-semiconductor-insulator-metal (MISIM) device, metho...
- Patent number 11,024,674
- Issue date Jun 1, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable, stackable, and BEOL-process compatible integrated neuron...
- Patent number 10,903,277
- Issue date Jan 26, 2021
- HRL Laboratories, LLC
- Wei L. Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas sensor using mm wave cavity
- Patent number 10,804,850
- Issue date Oct 13, 2020
- Innovative Micro Technology
- Christopher S. Gudeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-negative differential resistance device and method of manufac...
- Patent number 10,566,389
- Issue date Feb 18, 2020
- Research & Business Foundation Sungkyunkwan University
- Jin Hong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable, stackable, and BEOL-process compatible integrated neuron...
- Patent number 10,541,274
- Issue date Jan 21, 2020
- HRL Laboratories, LLC
- Wei Yi
- G11 - INFORMATION STORAGE
Information Patent Grant
Metal-insulator-semiconductor-insulator-metal (MISIM) device, metho...
- Patent number 10,515,998
- Issue date Dec 24, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jenn-Gwo Hwu
- G11 - INFORMATION STORAGE
Information Patent Grant
Rectifier for electromagnetic radiation
- Patent number 10,297,752
- Issue date May 21, 2019
- Nanohmics, Inc.
- Chris W. Mann
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Real-space charge-transfer device and method thereof
- Patent number 9,385,321
- Issue date Jul 5, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Don D. Smith
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Layer sequence for Gunn diode
- Patent number 7,326,953
- Issue date Feb 5, 2008
- Forschungszentrum Julich GmbH
- Arnold Förster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material devices and methods of forming the same
- Patent number 7,233,028
- Issue date Jun 19, 2007
- Nitronex Corporation
- T. Warren Weeks
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Gunn diode and method of manufacturing the same
- Patent number 6,686,647
- Issue date Feb 3, 2004
- New Japan Radio Co., Ltd.,
- Chikao Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material devices and methods including backside vias
- Patent number 6,611,002
- Issue date Aug 26, 2003
- Nitronex Corporation
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transferred electron tetrode
- Patent number 6,566,694
- Issue date May 20, 2003
- Sharp Kabushiki Kaisha
- John Kevin Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gunn diode, NRD guide Gunn oscillator, fabricating method of Gunn d...
- Patent number 6,514,832
- Issue date Feb 4, 2003
- New Japan Radio Co., Ltd.
- Atsushi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gunn diode, NRD guide gunn oscillator, fabricating method of gunn d...
- Patent number 6,426,511
- Issue date Jul 30, 2002
- New Japan Radio Co., Ltd.
- Atsushi Nakagawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
NRD guide Gunn oscillator
- Patent number 6,369,663
- Issue date Apr 9, 2002
- New Japan Radio Co., Ltd.
- Atsushi Nakagawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Gunn diode, NRD guide gunn oscillator, fabricating method of gunn d...
- Patent number 6,344,658
- Issue date Feb 5, 2002
- New Japan Radio Co., Ltd.
- Atsushi Nakagawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Gunn diode having a graded aluminum gallium arsenide active layer a...
- Patent number 6,111,265
- Issue date Aug 29, 2000
- Sharp Kabushiki Kaisha
- John Kevin Twynam
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Transferred electron effect device
- Patent number 5,675,157
- Issue date Oct 7, 1997
- U.S. Philips Corporation
- Stephen J. Battersby
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium phosphide Gunn diode with dopant gradient
- Patent number 5,311,034
- Issue date May 10, 1994
- Nippon Mining Co., Ltd.
- Hiroshi Kurita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transferred electron effect device
- Patent number 5,258,624
- Issue date Nov 2, 1993
- U.S. Philips Corp.
- Stephen J. Battersby
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable-frequency Gunn diodes fabrication with focused ion beams
- Patent number 5,256,579
- Issue date Oct 26, 1993
- Massachusetts Institute of Technology
- Henri Lezec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hot electron injector Gunn device with anode heat sink
- Patent number 5,250,815
- Issue date Oct 5, 1993
- U.S. Philips Corp.
- Stephen J. Battersby
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of gunn diode semiconductor devices
- Patent number 5,145,809
- Issue date Sep 8, 1992
- Millitech Corporation
- David K. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High frequency, frequency multiplier using parallel Gunn diodes
- Patent number 4,978,928
- Issue date Dec 18, 1990
- The United States of America as represented by the Secretary of the Navy
- Mario Ancona
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Gunn triode device, frequency divider and oscillator using this Gun...
- Patent number 4,975,661
- Issue date Dec 4, 1990
- Thomson Hydbrides et Microondes
- Maurice Gloanec
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Transferred electron device
- Patent number 4,894,689
- Issue date Jan 16, 1990
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transferred electron device with periodic ballistic regions
- Patent number 4,879,581
- Issue date Nov 7, 1989
- Thomson-CSF
- Felix Diamand
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TERAHERTZ GUNN OSCILLATOR USING GALLIUM NITRIDE
- Publication number 20230163724
- Publication date May 25, 2023
- Sixpoint Materials, Inc.
- TADAO HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gunn diode and method of manufacturing the same
- Publication number 20220344587
- Publication date Oct 27, 2022
- TECHNISCHE UNIVERSITAT DARMSTADT
- Oktay YILMAZOGLU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PULSE COMPRESSION PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES
- Publication number 20220123211
- Publication date Apr 21, 2022
- LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
- Lars F. Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GUNN DIODE AND METHOD FOR GENERATING A TERAHERTZ RADIATION
- Publication number 20210328143
- Publication date Oct 21, 2021
- TECHNISCHE UNIVERSITAT DARMSTADT
- Oktay Yilmazoglu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
METAL-INSULATOR-SEMICONDUCTOR-INSULATOR-METAL (MISIM) DEVICE, METHO...
- Publication number 20210288110
- Publication date Sep 16, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jenn-Gwo HWU
- G11 - INFORMATION STORAGE
Information Patent Application
RESONANT FILTER USING MM WAVE CAVITY
- Publication number 20210083625
- Publication date Mar 18, 2021
- Innovative Micro Technology
- Christopher S. GUDEMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-SEMICONDUCTOR-INSULATOR-METAL (MISIM) DEVICE, METHO...
- Publication number 20200135809
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jenn-Gwo HWU
- G11 - INFORMATION STORAGE
Information Patent Application
Electrical-Current Control Of Structural And Physical Properties Vi...
- Publication number 20200119274
- Publication date Apr 16, 2020
- The Regents of the University of Colorado, a Body Corporate
- Gang Cao
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SCALABLE, STACKABLE, AND BEOL-PROCESS COMPATIBLE INTEGRATED NEURON...
- Publication number 20200111840
- Publication date Apr 9, 2020
- HRL LABORATORIES, LLC
- Wei L. YI
- G11 - INFORMATION STORAGE
Information Patent Application
METAL-INSULATOR-SEMICONDUCTOR-INSULATOR-METAL (MISIM) DEVICE, METHO...
- Publication number 20190103441
- Publication date Apr 4, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jenn-Gwo HWU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS SENSOR USING MM WAVE CAVITY
- Publication number 20190068120
- Publication date Feb 28, 2019
- Innovative Micro Technology
- Christopher S. GUDEMAN
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MULTI-NEGATIVE DIFFERENTIAL RESISTANCE DEVICE AND METHOD OF MANUFAC...
- Publication number 20180358412
- Publication date Dec 13, 2018
- Research & Business Foundation Sungkyunwan University
- Jin Hong PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE, STACKABLE, AND BEOL-PROCESS COMPATIBLE INTEGRATED NEURON...
- Publication number 20180226453
- Publication date Aug 9, 2018
- HRL LABORATORIES, LLC
- Wei YI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Rectifier for Electromagnetic Radiation
- Publication number 20180040820
- Publication date Feb 8, 2018
- Chris W. Mann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REAL-SPACE CHARGE-TRANSFER DEVICE AND METHOD THEREOF
- Publication number 20160181523
- Publication date Jun 23, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Don D. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR TRANSITION SWITCHING DEVICES
- Publication number 20130207069
- Publication date Aug 15, 2013
- Matthew D. Pickett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GUNN DIODE
- Publication number 20100163837
- Publication date Jul 1, 2010
- TECHNISCHE UNIVERSITAET DARMSTADT
- Oktay Yilmazoglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIAL DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20070295985
- Publication date Dec 27, 2007
- Nitronex Corporation
- T. Warren Weeks
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Method for Determining Clinical and/or Chemical Parameters in a Med...
- Publication number 20070297741
- Publication date Dec 27, 2007
- Patrick Linder
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
Spectral resistor, spectral capacitor, order-infinity resonant tank...
- Publication number 20070170910
- Publication date Jul 26, 2007
- Ming-Hoo Chang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Gunn diode
- Publication number 20060232347
- Publication date Oct 19, 2006
- E2V TECHNOLOGIES (UK) LIMITED
- Keith David Newsome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Layered construction
- Publication number 20060054928
- Publication date Mar 16, 2006
- Arnold Forster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material devices and methods of forming the same
- Publication number 20040130002
- Publication date Jul 8, 2004
- Nitronex Corporation
- T. Warren Weeks
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Gunn diode and method of manufacturing the same
- Publication number 20020185709
- Publication date Dec 12, 2002
- NEW JAPAN RADIO CO., LTD.
- Chikao Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material devices and methods including backside vias
- Publication number 20020117681
- Publication date Aug 29, 2002
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transferred electron tetrode
- Publication number 20020011605
- Publication date Jan 31, 2002
- John Kevin Twynam
- H01 - BASIC ELECTRIC ELEMENTS

Gunn-effect devices or transferred electron devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Metal-insulator-semiconductor-insulator-metal (MISIM) device, metho...

Resonant filter using mm wave cavity

Metal-insulator-semiconductor-insulator-metal (MISIM) device, metho...

Scalable, stackable, and BEOL-process compatible integrated neuron...

Gas sensor using mm wave cavity

Multi-negative differential resistance device and method of manufac...

Scalable, stackable, and BEOL-process compatible integrated neuron...

Metal-insulator-semiconductor-insulator-metal (MISIM) device, metho...

Rectifier for electromagnetic radiation

Real-space charge-transfer device and method thereof

Layer sequence for Gunn diode

Gallium nitride material devices and methods of forming the same

Gunn diode and method of manufacturing the same

Gallium nitride material devices and methods including backside vias

Heterojunction bipolar transferred electron tetrode

Gunn diode, NRD guide Gunn oscillator, fabricating method of Gunn d...

Gunn diode, NRD guide gunn oscillator, fabricating method of gunn d...

NRD guide Gunn oscillator

Gunn diode, NRD guide gunn oscillator, fabricating method of gunn d...

Gunn diode having a graded aluminum gallium arsenide active layer a...

Transferred electron effect device

Indium phosphide Gunn diode with dopant gradient

Transferred electron effect device

Tunable-frequency Gunn diodes fabrication with focused ion beams

Hot electron injector Gunn device with anode heat sink

Fabrication of gunn diode semiconductor devices

High frequency, frequency multiplier using parallel Gunn diodes

Gunn triode device, frequency divider and oscillator using this Gun...

Transferred electron device

Transferred electron device with periodic ballistic regions

Patents Applicationslast 30 patents

TERAHERTZ GUNN OSCILLATOR USING GALLIUM NITRIDE

Gunn diode and method of manufacturing the same

PULSE COMPRESSION PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES

GUNN DIODE AND METHOD FOR GENERATING A TERAHERTZ RADIATION

METAL-INSULATOR-SEMICONDUCTOR-INSULATOR-METAL (MISIM) DEVICE, METHO...

RESONANT FILTER USING MM WAVE CAVITY

METAL-INSULATOR-SEMICONDUCTOR-INSULATOR-METAL (MISIM) DEVICE, METHO...

Electrical-Current Control Of Structural And Physical Properties Vi...

SCALABLE, STACKABLE, AND BEOL-PROCESS COMPATIBLE INTEGRATED NEURON...

METAL-INSULATOR-SEMICONDUCTOR-INSULATOR-METAL (MISIM) DEVICE, METHO...

GAS SENSOR USING MM WAVE CAVITY

MULTI-NEGATIVE DIFFERENTIAL RESISTANCE DEVICE AND METHOD OF MANUFAC...

SCALABLE, STACKABLE, AND BEOL-PROCESS COMPATIBLE INTEGRATED NEURON...

Rectifier for Electromagnetic Radiation

REAL-SPACE CHARGE-TRANSFER DEVICE AND METHOD THEREOF

METAL-INSULATOR TRANSITION SWITCHING DEVICES

GUNN DIODE

GALLIUM NITRIDE MATERIAL DEVICES AND METHODS OF FORMING THE SAME

Method for Determining Clinical and/or Chemical Parameters in a Med...

Spectral resistor, spectral capacitor, order-infinity resonant tank...

Gunn diode

Layered construction

Gallium nitride material devices and methods of forming the same

Gunn diode and method of manufacturing the same

Gallium nitride material devices and methods including backside vias

Heterojunction bipolar transferred electron tetrode