Half-metallic

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CPC
H01F10/1936

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HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

Current Industry

H01F10/1936Half-metallic

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistance effect element and Heusler alloy
- Patent number 12,217,775
- Issue date Feb 4, 2025
- TDK Corporation
- Kazuumi Inubushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 12,211,524
- Issue date Jan 28, 2025
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-dimensional Dirac half-metal ferromagnets and ferromagnetic mat...
- Patent number 11,955,263
- Issue date Apr 9, 2024
- The Trustees of the California State University
- Nicholas Kioussis
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Insertion layers for perpendicularly magnetized Heusler layers with...
- Patent number 11,925,124
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and Heusler alloy
- Patent number 11,769,523
- Issue date Sep 26, 2023
- TDK Corporation
- Kazuumi Inubushi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,763,841
- Issue date Sep 19, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferrimagnetic Heusler compounds with high spin polarization
- Patent number 11,756,578
- Issue date Sep 12, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and Heusler alloy
- Patent number 11,581,365
- Issue date Feb 14, 2023
- TDK Corporation
- Katsuyuki Nakada
- G11 - INFORMATION STORAGE
Information Patent Grant
Rare earth metal-free hard magnets
- Patent number 11,538,610
- Issue date Dec 27, 2022
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
- Rolf Stinshoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional Dirac half-metal ferromagnets and ferromagnetic mat...
- Patent number 11,495,381
- Issue date Nov 8, 2022
- The Trustees of the California State University
- Nicholas Kioussis
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect element and Heusler alloy
- Patent number 11,410,689
- Issue date Aug 9, 2022
- TDK Corporation
- Kazuumi Inubushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,309,115
- Issue date Apr 19, 2022
- TDK Corporation
- Katsuyuki Nakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,133,028
- Issue date Sep 28, 2021
- TDK Corporation
- Tomoyuki Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 10,937,951
- Issue date Mar 2, 2021
- TDK Corporation
- Katsuyuki Nakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low stray field magnetic memory
- Patent number 10,832,847
- Issue date Nov 10, 2020
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monocrystalline magneto resistance element, method for producing th...
- Patent number 10,749,105
- Issue date Aug 18, 2020
- National Institute for Materials Science
- Jiamin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 10,720,178
- Issue date Jul 21, 2020
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 10,685,671
- Issue date Jun 16, 2020
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element, magnetic head, sensor, high freque...
- Patent number 10,665,374
- Issue date May 26, 2020
- TDK Corporation
- Kazuumi Inubushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 10,629,231
- Issue date Apr 21, 2020
- TDK Corporation
- Tomoyuki Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminated structure and spin modulation element
- Patent number 10,629,801
- Issue date Apr 21, 2020
- TDK Corporation
- Eiji Suzuki
- G01 - MEASURING TESTING
Information Patent Grant
Spin logic device with high spin injection efficiency from a matche...
- Patent number 10,622,132
- Issue date Apr 14, 2020
- Intel Corporation
- Sasikanth Manipatruni
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory element
- Patent number 10,490,247
- Issue date Nov 26, 2019
- The University of Tokyo
- Satoru Nakatsuji
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 10,255,934
- Issue date Apr 9, 2019
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 10,224,067
- Issue date Mar 5, 2019
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Monocrystalline magneto resistance element, method for producing th...
- Patent number 10,205,091
- Issue date Feb 12, 2019
- National Institute for Materials Science
- Jiamin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Templating layers for perpendicularly magnetized heusler films
- Patent number 10,177,305
- Issue date Jan 8, 2019
- International Business Machines Corporation
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular spin transfer torque memory (STTM) device with enhanc...
- Patent number 9,882,123
- Issue date Jan 30, 2018
- Intel Corporation
- Brian S. Doyle
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element and memory device
- Patent number 9,818,464
- Issue date Nov 14, 2017
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device
- Patent number 9,722,173
- Issue date Aug 1, 2017
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY
- Publication number 20240062777
- Publication date Feb 22, 2024
- TDK Corporation
- Kazuumi INUBUSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20230386511
- Publication date Nov 30, 2023
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
Two-Dimensional Dirac Half-Metal Ferromagnets and Ferromagnetic Mat...
- Publication number 20230055260
- Publication date Feb 23, 2023
- The Trustees of the California State University
- Nicholas Kioussis
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY
- Publication number 20220328067
- Publication date Oct 13, 2022
- TDK Corporation
- Kazuumi INUBUSHI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20210383828
- Publication date Dec 9, 2021
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY
- Publication number 20210043682
- Publication date Feb 11, 2021
- TDK Corporation
- Katsuyuki NAKADA
- G11 - INFORMATION STORAGE
Information Patent Application
DOUBLE-CHANNEL TOPOLOGICAL INSULATOR STRUCTURE, AND METHOD FOR GENE...
- Publication number 20200365798
- Publication date Nov 19, 2020
- TSINGHUA UNIVERSITY
- KE HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20200303634
- Publication date Sep 24, 2020
- TDK Corporation
- Kazuumi INUBUSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20200219532
- Publication date Jul 9, 2020
- TDK Corporation
- Tomoyuki SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW STRAY FIELD MAGNETIC MEMORY
- Publication number 20200051724
- Publication date Feb 13, 2020
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20190325903
- Publication date Oct 24, 2019
- TDK Corporation
- Tomoyuki SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two-Dimensional Dirac Half-Metal Ferromagnets and Ferromagnetic Mat...
- Publication number 20190304652
- Publication date Oct 3, 2019
- The California State University - Northridge
- Nicholas Kioussis
- C01 - INORGANIC CHEMISTRY
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20190221230
- Publication date Jul 18, 2019
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20180068680
- Publication date Mar 8, 2018
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20180068681
- Publication date Mar 8, 2018
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD, AND MAGNETIC RECORDING AND...
- Publication number 20140334029
- Publication date Nov 13, 2014
- Kabushiki Kaisha Toshiba
- Naoki HASE
- G01 - MEASURING TESTING
Information Patent Application
CURRENT PERPENDICULAR TO PLANE MAGNETORESISTIVE SENSOR EMPLOYING HA...
- Publication number 20140335377
- Publication date Nov 13, 2014
- HGST NETHERLANDS B.V.
- Hardayal S. Gill
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nano Multilayer Film, Field Effect Tube, Sensor, Random Accessory M...
- Publication number 20140321199
- Publication date Oct 30, 2014
- INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
- Xiu-Feng Han
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH ENHANC...
- Publication number 20140308760
- Publication date Oct 16, 2014
- Brian S. Doyle
- G11 - INFORMATION STORAGE
Information Patent Application
MR Enhancing Layer (MREL) For Spintronic Devices
- Publication number 20140220385
- Publication date Aug 7, 2014
- HEADWAY TECHNOLOGIES, INC.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MR Enhancing Layer (MREL) For Spintronic Devices
- Publication number 20140220708
- Publication date Aug 7, 2014
- HEADWAY TECHNOLOGIES, INC.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH ENHANC...
- Publication number 20140175575
- Publication date Jun 26, 2014
- Brian S. Doyle
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH TOPOGRAPHICALLY SMOO...
- Publication number 20140084399
- Publication date Mar 27, 2014
- Mark L. Doczy
- G11 - INFORMATION STORAGE
Information Patent Application
CO2FE-BASED HEUSLER ALLOY AND SPINTRONICS DEVICES USING THE SAME
- Publication number 20130302649
- Publication date Nov 14, 2013
- Yukiko Takahashi
- B82 - NANO-TECHNOLOGY
Information Patent Application
SPIN VALVES USING ORGANIC SPACERS AND SPIN-ORGANIC LIGHT-EMITTING S...
- Publication number 20130299786
- Publication date Nov 14, 2013
- The University of Utah
- Jing Shi
- B82 - NANO-TECHNOLOGY
Information Patent Application
SPIN FIELD EFFECT LOGIC DEVICES
- Publication number 20130277722
- Publication date Oct 24, 2013
- Samsung Electronics Co., LTD
- Ki-ha Hong
- B82 - NANO-TECHNOLOGY
Information Patent Application
MEMORY CELLS, SEMICONDUCTOR DEVICE STRUCTURES, SYSTEMS INCLUDING SU...
- Publication number 20130250661
- Publication date Sep 26, 2013
- Micron Technology, Inc.
- Gurtej S. Sandhu
- G11 - INFORMATION STORAGE
Information Patent Application
RARE-EARTH-FREE OR NOBLE METAL-FREE LARGE MAGNETIC COERCIVITY NANOS...
- Publication number 20130236720
- Publication date Sep 12, 2013
- Northeastern University
- Donald HEIMAN
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Application
METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNET...
- Publication number 20130236639
- Publication date Sep 12, 2013
- Matthew J. Carey
- G01 - MEASURING TESTING
Information Patent Application
CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WI...
- Publication number 20130236744
- Publication date Sep 12, 2013
- Elizabeth Ann Brinkman
- G11 - INFORMATION STORAGE

Half-metallic

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetoresistance effect element and Heusler alloy

Magnetoresistance effect element

Two-dimensional Dirac half-metal ferromagnets and ferromagnetic mat...

Insertion layers for perpendicularly magnetized Heusler layers with...

Magnetoresistance effect element and Heusler alloy

Magnetoresistance effect element

Ferrimagnetic Heusler compounds with high spin polarization

Magnetoresistance effect element and Heusler alloy

Rare earth metal-free hard magnets

Two-dimensional Dirac half-metal ferromagnets and ferromagnetic mat...

Magnetoresistance effect element and Heusler alloy

Magnetoresistance effect element

Magnetoresistance effect element

Magnetoresistance effect element

Low stray field magnetic memory

Monocrystalline magneto resistance element, method for producing th...

Magnetoresistance effect element

Magnetoresistance effect element

Magnetoresistive effect element, magnetic head, sensor, high freque...

Magnetoresistance effect element

Laminated structure and spin modulation element

Spin logic device with high spin injection efficiency from a matche...

Memory element

Magnetoresistance effect element

Magnetoresistance effect element

Monocrystalline magneto resistance element, method for producing th...

Templating layers for perpendicularly magnetized heusler films

Perpendicular spin transfer torque memory (STTM) device with enhanc...

Magnetic memory element and memory device

Memory device

Patents Applicationslast 30 patents

MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY

MAGNETORESISTANCE EFFECT ELEMENT

Two-Dimensional Dirac Half-Metal Ferromagnets and Ferromagnetic Mat...

MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY

DOUBLE-CHANNEL TOPOLOGICAL INSULATOR STRUCTURE, AND METHOD FOR GENE...

MAGNETORESISTIVE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

LOW STRAY FIELD MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT

Two-Dimensional Dirac Half-Metal Ferromagnets and Ferromagnetic Mat...

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD, AND MAGNETIC RECORDING AND...

CURRENT PERPENDICULAR TO PLANE MAGNETORESISTIVE SENSOR EMPLOYING HA...

Nano Multilayer Film, Field Effect Tube, Sensor, Random Accessory M...

PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH ENHANC...

MR Enhancing Layer (MREL) For Spintronic Devices

MR Enhancing Layer (MREL) For Spintronic Devices

PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH ENHANC...

SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH TOPOGRAPHICALLY SMOO...

CO2FE-BASED HEUSLER ALLOY AND SPINTRONICS DEVICES USING THE SAME

SPIN VALVES USING ORGANIC SPACERS AND SPIN-ORGANIC LIGHT-EMITTING S...

SPIN FIELD EFFECT LOGIC DEVICES

MEMORY CELLS, SEMICONDUCTOR DEVICE STRUCTURES, SYSTEMS INCLUDING SU...

RARE-EARTH-FREE OR NOBLE METAL-FREE LARGE MAGNETIC COERCIVITY NANOS...

METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNET...

CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WI...