having details of a stabilizing feature

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CPC
Y10T117/1084

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes non-coating apparatus therefor

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Y10T117/1084having details of a stabilizing feature

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Patents Grantslast 30 patents

Information Patent Grant
Doping apparatus for simultaneously injecting two dopants into a se...
- Patent number 8,715,416
- Issue date May 6, 2014
- Sumco Techxiv Corporation
- Yasuhito Narushima
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and device for producting monocrystals
- Patent number 7,465,355
- Issue date Dec 16, 2008
- Centre National de la Recherche Scientifique
- Thierry Duffar
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Rotationally-vibrated unidirectional solidification crystal growth...
- Patent number 7,344,598
- Issue date Mar 18, 2008
- National Taiwan University
- Chune-Wen Lan
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Powder metallurgy crucible for aluminum nitride crystal growth
- Patent number 7,211,146
- Issue date May 1, 2007
- Crystal IS, Inc.
- Leo J. Schowalter
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Hybrid stockbarger zone-leveling melting method for directed crysta...
- Patent number 6,942,730
- Issue date Sep 13, 2005
- H. C. Materials Corporation
- Pengdi Han
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Powder metallurgy tungsten crucible for aluminum nitride crystal gr...
- Patent number 6,719,843
- Issue date Apr 13, 2004
- Crystal Is, Inc.
- Leo J. Schowalter
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crucible for growing macrocrystals
- Patent number 6,562,133
- Issue date May 13, 2003
- Carl Francis Swinehart
- F27 - FURNACES KILNS OVENS RETORTS
Information Patent Grant
Crucible for growing macrocrystals
- Patent number 6,423,136
- Issue date Jul 23, 2002
- Carl Francis Swinehart
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crucible for growing macrocrystals
- Patent number 6,277,351
- Issue date Aug 21, 2001
- Carl Francis Swinehart
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor single-crystal growth system
- Patent number 6,261,364
- Issue date Jul 17, 2001
- Mitsubishi Materials Corporation
- Yoshiaki Arai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crucible for growing macrocrystals
- Patent number 6,200,385
- Issue date Mar 13, 2001
- Carl Francis Swinehart
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for handling heavy components of a crystal puller according...
- Patent number 6,010,569
- Issue date Jan 4, 2000
- Balzers and Leybold Deutschland Holding AG
- Winfried Schulmann
- C30 - CRYSTAL GROWTH
Information Patent Grant
Antivibration support for Czochralski crystal growing systems
- Patent number 5,968,267
- Issue date Oct 19, 1999
- General Signal Technology Corporation
- Zhixin Li
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a semiconductor single-crystal
- Patent number 5,858,085
- Issue date Jan 12, 1999
- Mitsubishi Materials Corporation
- Yoshiaki Arai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor single-crystal growth system
- Patent number 5,720,810
- Issue date Feb 24, 1998
- Mitsubishi Materials Corporation
- Yoshiaki Arai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-clamping holder for polysilicon rod used in floating-zone sing...
- Patent number 5,427,057
- Issue date Jun 27, 1995
- Shin-Etsu Handotai Co., Ltd.
- Michiaki Hattori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Bar and crucible magnetic suspension for a crystal-growing apparatus
- Patent number 5,009,865
- Issue date Apr 23, 1991
- Kernforschungsanlage Julich GmbH
- Karl Boden
- C30 - CRYSTAL GROWTH
Information Patent Grant
Supporting apparatus for semiconductor crystal rod
- Patent number 4,886,647
- Issue date Dec 12, 1989
- Shin-Etsu Handotai Co., Ltd.
- Yasuhiro Ikeda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for the crucible-free floating zone pulling of semiconductor...
- Patent number 4,851,628
- Issue date Jul 25, 1989
- Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
- Wilfried V. Ammon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of and apparatus for growing crystals
- Patent number 4,818,500
- Issue date Apr 4, 1989
- Kernforschungsanlage Julich Gesellschaft mit beschrankter Haftung
- Karl Boden
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of and apparatus for growing crystals
- Patent number 4,708,764
- Issue date Nov 24, 1987
- Kernforschungsanlage Julich Gesellschaft mit beschrankter Haftung
- Karl Boden
- C30 - CRYSTAL GROWTH
Information Patent Grant
Suppression or control of liquid convection in float zones in a zer...
- Patent number 4,615,760
- Issue date Oct 7, 1986
- Robert F. Dressler
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of setting a stable melting zone in a semiconductor crystall...
- Patent number 4,436,578
- Issue date Mar 13, 1984
- Siemens Aktiengesellschaft
- Wolfgang Keller
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for semiconductor ribbon-to-ribbon conversion
- Patent number 4,427,638
- Issue date Jan 24, 1984
- Motorola, Inc.
- Ralph J. Ellis
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for recrystallization of thin strip material
- Patent number 4,356,861
- Issue date Nov 2, 1982
- Olin Corporation
- Joseph Winter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for reforming an improved strip of material fr...
- Patent number 4,325,777
- Issue date Apr 20, 1982
- Olin Corporation
- John C. Yarwood
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large crystal float zone apparatus
- Patent number 4,258,009
- Issue date Mar 24, 1981
- Topsil A/S
- Noel De Leon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Stabilizing and supporting apparatus for float zone refined semicon...
- Patent number 4,257,841
- Issue date Mar 24, 1981
- Monsanto Company
- John M. Ross
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing monocrystals
- Patent number 4,186,173
- Issue date Jan 29, 1980
- Leybold-Heraeus GmbH & Co. KG
- Karl Jericho
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crucible-free zone refining of semiconductor material including ann...
- Patent number 4,140,571
- Issue date Feb 20, 1979
- Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
- Heinz Herzer
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR PRODUCING A SINGLE CRYSTAL
- Publication number 20100107968
- Publication date May 6, 2010
- TOPSIL SIMICONDUCTOR MATERIALS A/S
- Per Vaabengaard
- C30 - CRYSTAL GROWTH
Information Patent Application
DOPING APPARATUS AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL
- Publication number 20100031871
- Publication date Feb 11, 2010
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Application
Powder metallurgy crucible for aluminum nitride crystal growth
- Publication number 20080134957
- Publication date Jun 12, 2008
- Crystal IS, Inc.
- Leo J. Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and Device for Producting Monocrystals
- Publication number 20070277729
- Publication date Dec 6, 2007
- Thierry Duffar
- C30 - CRYSTAL GROWTH
Information Patent Application
Rotationally-vibrated unidirectional solidification crystal growth...
- Publication number 20060054081
- Publication date Mar 16, 2006
- Chune-Wen Lan
- C30 - CRYSTAL GROWTH
Information Patent Application
Powder metallurgy crucible for aluminum nitride crystal growth
- Publication number 20050223967
- Publication date Oct 13, 2005
- Leo J. Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Application
Hybrid stockbarger zone-leveling melting method for directed crysta...
- Publication number 20030164137
- Publication date Sep 4, 2003
- H.C. Materials Corporation
- Pengdi Han
- C30 - CRYSTAL GROWTH
Information Patent Application
Powder metallurgy tungsten crucible for aluminum nitride crystal gr...
- Publication number 20030127044
- Publication date Jul 10, 2003
- Leo J. Schowalter
- C30 - CRYSTAL GROWTH

having details of a stabilizing feature

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Doping apparatus for simultaneously injecting two dopants into a se...

Method and device for producting monocrystals

Rotationally-vibrated unidirectional solidification crystal growth...

Powder metallurgy crucible for aluminum nitride crystal growth

Hybrid stockbarger zone-leveling melting method for directed crysta...

Powder metallurgy tungsten crucible for aluminum nitride crystal gr...

Crucible for growing macrocrystals

Crucible for growing macrocrystals

Crucible for growing macrocrystals

Semiconductor single-crystal growth system

Crucible for growing macrocrystals

Device for handling heavy components of a crystal puller according...

Antivibration support for Czochralski crystal growing systems

Method for growing a semiconductor single-crystal

Semiconductor single-crystal growth system

Self-clamping holder for polysilicon rod used in floating-zone sing...

Bar and crucible magnetic suspension for a crystal-growing apparatus

Supporting apparatus for semiconductor crystal rod

Method for the crucible-free floating zone pulling of semiconductor...

Method of and apparatus for growing crystals

Method of and apparatus for growing crystals

Suppression or control of liquid convection in float zones in a zer...

Method of setting a stable melting zone in a semiconductor crystall...

Apparatus for semiconductor ribbon-to-ribbon conversion

Process for recrystallization of thin strip material

Method and apparatus for reforming an improved strip of material fr...

Large crystal float zone apparatus

Stabilizing and supporting apparatus for float zone refined semicon...

Apparatus for producing monocrystals

Crucible-free zone refining of semiconductor material including ann...

Patents Applicationslast 30 patents

METHOD AND APPARATUS FOR PRODUCING A SINGLE CRYSTAL

DOPING APPARATUS AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL

Powder metallurgy crucible for aluminum nitride crystal growth

Method and Device for Producting Monocrystals

Rotationally-vibrated unidirectional solidification crystal growth...

Powder metallurgy crucible for aluminum nitride crystal growth

Hybrid stockbarger zone-leveling melting method for directed crysta...

Powder metallurgy tungsten crucible for aluminum nitride crystal gr...