having tunnel junction effect

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CPC
Y10T428/1114

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION Y10T428/00Stock material or miscellaneous articles

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Y10T428/1114having tunnel junction effect

Industries

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive sensor and fabrication method for a magnetoresisti...
- Patent number 11,892,526
- Issue date Feb 6, 2024
- Infineon Technologies AG
- Bernhard Endres
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory system having thermally stable perpendicular magneto tunnel...
- Patent number 11,678,586
- Issue date Jun 13, 2023
- Avalanche Technology, Inc.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic switching element
- Patent number 11,522,141
- Issue date Dec 6, 2022
- Merck Patent GmbH
- Peer Kirsch
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic field sensor using in situ solid source graphene and graph...
- Patent number 11,156,678
- Issue date Oct 26, 2021
- The Government of the United States of America, as represented by the Secreta...
- Olaf M. J. van't Erve
- G01 - MEASURING TESTING
Information Patent Grant
Electronic switching element
- Patent number 11,063,227
- Issue date Jul 13, 2021
- Merck Patent GmbH
- Peer Kirsch
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 10,651,369
- Issue date May 12, 2020
- Tohoku University
- Hideo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional magnetic memory with multi-layer data storage layers
- Patent number 10,014,045
- Issue date Jul 3, 2018
- Western Digital Technologies, Inc.
- Olav Hellwig
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic read head with antiferromagentic layer
- Patent number 9,830,936
- Issue date Nov 28, 2017
- Western Digital (Fremont), LLC
- Shaoping Li
- G11 - INFORMATION STORAGE
Information Patent Grant
TMR device with novel free layer structure
- Patent number 9,577,184
- Issue date Feb 21, 2017
- Headway Technologies, Inc.
- Tong Zhao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Managed print service automated and integrated system
- Patent number 9,573,807
- Issue date Feb 21, 2017
- Distribution Management, Inc.
- Michelle Therese Weaver Kaufman
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 9,564,152
- Issue date Feb 7, 2017
- Tohoku University
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Grant
CoFe/Ni multilayer film with perpendicular anisotropy for microwave...
- Patent number 9,558,765
- Issue date Jan 31, 2017
- Headway Technologies, Inc.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
TMR device with novel free layer
- Patent number 9,484,049
- Issue date Nov 1, 2016
- Headway Technologies, Inc.
- Hui-Chuan Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
TMR device with novel free layer structure
- Patent number 9,437,812
- Issue date Sep 6, 2016
- Headway Technologies, Inc.
- Tong Zhao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stack with wide seed layer
- Patent number 9,437,224
- Issue date Sep 6, 2016
- Seagate Technology LLC
- Eric Walter Singleton
- G11 - INFORMATION STORAGE
Information Patent Grant
Scalable magnetoresistive element
- Patent number 9,368,176
- Issue date Jun 14, 2016
- Alexander Mikhailovich Shukh
- G11 - INFORMATION STORAGE
Information Patent Grant
CoFe/Ni multilayer film with perpendicular anisotropy for microwave...
- Patent number 9,349,396
- Issue date May 24, 2016
- Headway Technologies, Inc.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Structure and method to fabricate high performance MTJ devices for...
- Patent number 9,331,271
- Issue date May 3, 2016
- Headway Technologies, Inc.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
CoFe/Ni multilayer film with perpendicular anisotropy for microwave...
- Patent number 9,208,801
- Issue date Dec 8, 2015
- Headway Technologies, Inc.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of fabricating a magnetoresistive element
- Patent number 9,182,460
- Issue date Nov 10, 2015
- Alexander Mikhailovich Shukh
- G11 - INFORMATION STORAGE
Information Patent Grant
MR enhancing layer (MREL) for spintronic devices
- Patent number 9,147,834
- Issue date Sep 29, 2015
- Headway Technologies, Inc.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Current-perpendicular-to-plane magnetoresistive read sensor with gr...
- Patent number 9,099,121
- Issue date Aug 4, 2015
- International Business Machines Corporation
- Giovanni Cherubini
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic element having perpendicular anisotropy with enhanced effi...
- Patent number 9,082,534
- Issue date Jul 14, 2015
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junctions with perpendicular magnetization and magn...
- Patent number 9,070,457
- Issue date Jun 30, 2015
- Tohoku University
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Grant
STT-MRAM MTJ manufacturing method with in-situ annealing
- Patent number 8,758,850
- Issue date Jun 24, 2014
- Avalanche Technology, Inc.
- Yuchen Zhou
- G11 - INFORMATION STORAGE
Information Patent Grant
Protecting hard bias magnets during a CMP process using a sacrifici...
- Patent number 8,749,925
- Issue date Jun 10, 2014
- HGST Netherlands, B.V.
- Ying Hong
- B82 - NANO-TECHNOLOGY
Information Patent Grant
TMR device with novel free layer
- Patent number 8,747,629
- Issue date Jun 10, 2014
- Headway Technologies, Inc.
- Hui-Chuan Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming a spin-transfer torque random access memory (STT-...
- Patent number 8,726,491
- Issue date May 20, 2014
- Headway Technologies, Inc.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory cell construction
- Patent number 8,679,577
- Issue date Mar 25, 2014
- Seagate Technology LLC
- Kaizhong Gao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Underlayer for high performance magnetic tunneling junction MRAM
- Patent number 8,673,654
- Issue date Mar 18, 2014
- Headway Technologies, Inc.
- Liubo Hong
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
CURRENT-PERPENDICULAR-TO-PLANE MAGNETORESISTIVE READ SENSOR
- Publication number 20140363699
- Publication date Dec 11, 2014
- International Business Machines Corporation
- Giovanni Cherubini
- G11 - INFORMATION STORAGE
Information Patent Application
STACK WITH WIDE SEED LAYER
- Publication number 20140356648
- Publication date Dec 4, 2014
- SEAGATE TECHNOLOGY LLC
- Eric Walter Singleton
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC MEMORY INCLUDING MEMORY CELLS INCORPORATING DATA RECORDING...
- Publication number 20140346518
- Publication date Nov 27, 2014
- Eiji Kariyada
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTANCE DEVICE INCLUDING LAYERED FERROMAGNETIC STRUCTURE,...
- Publication number 20140346625
- Publication date Nov 27, 2014
- NEC Corporation
- Yoshiyuki Fukumoto
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR MAKING A TUNNELING MAGNETORESISTIVE (TMR) SENSOR
- Publication number 20140313617
- Publication date Oct 23, 2014
- HGST NETHERLANDS B.V.
- Jordan Asher Katine
- G11 - INFORMATION STORAGE
Information Patent Application
TMR Device with Novel Free Layer
- Publication number 20140287267
- Publication date Sep 25, 2014
- Hui-Chuan Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of Fabricating a Magnetoresistive Element
- Publication number 20140287537
- Publication date Sep 25, 2014
- Alexander Mikhailovich Shukh
- G01 - MEASURING TESTING
Information Patent Application
Scalable Magnetoresistive Element
- Publication number 20140242418
- Publication date Aug 28, 2014
- Alexander Mikhailovich Shukh
- G01 - MEASURING TESTING
Information Patent Application
MR Enhancing Layer (MREL) For Spintronic Devices
- Publication number 20140220385
- Publication date Aug 7, 2014
- HEADWAY TECHNOLOGIES, INC.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MR Enhancing Layer (MREL) For Spintronic Devices
- Publication number 20140220708
- Publication date Aug 7, 2014
- HEADWAY TECHNOLOGIES, INC.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetoresistance Effect Element and Magnetic Memory
- Publication number 20140205862
- Publication date Jul 24, 2014
- Tohoku University
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Application
Low Resistance Area Magnetic Stack
- Publication number 20140154528
- Publication date Jun 5, 2014
- SEAGATE TECHNOLOGY LLC
- Vijay Karthik Sankar
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE SENSOR FOR A MAGNETIC STORAGE SYSTEM READ HEAD, AN...
- Publication number 20140154529
- Publication date Jun 5, 2014
- WESTERN DIGITAL (FREMONT), LLC
- Cheng-Han YANG
- B82 - NANO-TECHNOLOGY
Information Patent Application
Structure and Method to Fabricate High Performance MTJ Devices for...
- Publication number 20140099735
- Publication date Apr 10, 2014
- MAGIC TECHNOLOGIES, INC.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC HEAD, AND MAGNETIC STORAGE APPARATUS
- Publication number 20140063648
- Publication date Mar 6, 2014
- Hitachi, Ltd
- Yoshihiro SHIROISHI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY (MRAM) WITH ENHANCED MAGNETIC STIFFNE...
- Publication number 20140038314
- Publication date Feb 6, 2014
- Avalanche Technology, Inc.
- Yuchen Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL...
- Publication number 20140008744
- Publication date Jan 9, 2014
- AVALANCHE TECHNOLOGY INC.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Application
STACK WITH WIDE SEED LAYER
- Publication number 20130288076
- Publication date Oct 31, 2013
- SEAGATE TECHNOLOGY LLC
- Eric Walter Singleton
- G01 - MEASURING TESTING
Information Patent Application
Free Layer with High Thermal Stability for Magnetic Device Applicat...
- Publication number 20130270523
- Publication date Oct 17, 2013
- HEADWAY TECHNOLOGIES, INC.
- Yu-Jen Wang
- G01 - MEASURING TESTING
Information Patent Application
CoFeSiB/Pt Multilayers Exhibiting Perpendicular Magnetic Anisotropy
- Publication number 20130244058
- Publication date Sep 19, 2013
- KOREA UNIVERSITY FOUNDATION
- Young Keun Kim
- G01 - MEASURING TESTING
Information Patent Application
High Thermal Stability Free Layer with High Out-of-Plane Anisotropy...
- Publication number 20130230741
- Publication date Sep 5, 2013
- HEADWAY TECHNOLOGIES, INC.
- Yu-Jen Wang
- G01 - MEASURING TESTING
Information Patent Application
METHOD AND SYSTEM FOR DEFINING A MAGNETORESISTIVE JUNCTION
- Publication number 20130216863
- Publication date Aug 22, 2013
- WESTERN DIGITAL (FREMONT), LLC
- Guanxiong Li
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC ELEMENT HAVING PERPENDICULAR ANISOTROPY WITH ENHANCED EFFI...
- Publication number 20130177781
- Publication date Jul 11, 2013
- Roman Chepulskyy
- B82 - NANO-TECHNOLOGY
Information Patent Application
TUNNELING MAGNETORESISTANCE (TMR) READ SENSOR WITH A LONG DIFFUSION...
- Publication number 20130164562
- Publication date Jun 27, 2013
- Hitachi Global Storage Technologies Netherlands B.V.
- Tsann Lin
- G01 - MEASURING TESTING
Information Patent Application
MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL...
- Publication number 20130119498
- Publication date May 16, 2013
- Avalanche Technology, Inc.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20130094284
- Publication date Apr 18, 2013
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Application
Spin injection layer robustness for microwave assisted magnetic rec...
- Publication number 20130082787
- Publication date Apr 4, 2013
- Kabushiki Kaisha Toshiba
- Kunliang Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Scalable Magnetoresistive Element
- Publication number 20130078482
- Publication date Mar 28, 2013
- Alexander Mikhailovich Shukh
- G01 - MEASURING TESTING
Information Patent Application
Varyinig Morphology in Magnetic Sensor Sub-Layers
- Publication number 20130071692
- Publication date Mar 21, 2013
- SEAGATE TECHNOLOGY LLC
- Mark William Covington
- B82 - NANO-TECHNOLOGY
Information Patent Application
CoFe/Ni Multilayer Film with Perpendicular Anisotropy for Microwave...
- Publication number 20130029035
- Publication date Jan 31, 2013
- HEADWAY TECHNOLOGIES, INC.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY

having tunnel junction effect

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetoresistive sensor and fabrication method for a magnetoresisti...

Memory system having thermally stable perpendicular magneto tunnel...

Electronic switching element

Magnetic field sensor using in situ solid source graphene and graph...

Electronic switching element

Magnetoresistive element and magnetic memory

Three-dimensional magnetic memory with multi-layer data storage layers

Magnetic read head with antiferromagentic layer

TMR device with novel free layer structure

Managed print service automated and integrated system

Magnetoresistance effect element and magnetic memory

CoFe/Ni multilayer film with perpendicular anisotropy for microwave...

TMR device with novel free layer

TMR device with novel free layer structure

Stack with wide seed layer

Scalable magnetoresistive element

CoFe/Ni multilayer film with perpendicular anisotropy for microwave...

Structure and method to fabricate high performance MTJ devices for...

CoFe/Ni multilayer film with perpendicular anisotropy for microwave...

Method of fabricating a magnetoresistive element

MR enhancing layer (MREL) for spintronic devices

Current-perpendicular-to-plane magnetoresistive read sensor with gr...

Magnetic element having perpendicular anisotropy with enhanced effi...

Magnetic tunnel junctions with perpendicular magnetization and magn...

STT-MRAM MTJ manufacturing method with in-situ annealing

Protecting hard bias magnets during a CMP process using a sacrifici...

TMR device with novel free layer

Method of forming a spin-transfer torque random access memory (STT-...

Magnetic memory cell construction

Underlayer for high performance magnetic tunneling junction MRAM

Patents Applicationslast 30 patents

CURRENT-PERPENDICULAR-TO-PLANE MAGNETORESISTIVE READ SENSOR

STACK WITH WIDE SEED LAYER

MAGNETIC MEMORY INCLUDING MEMORY CELLS INCORPORATING DATA RECORDING...

MAGNETORESISTANCE DEVICE INCLUDING LAYERED FERROMAGNETIC STRUCTURE,...

METHOD FOR MAKING A TUNNELING MAGNETORESISTIVE (TMR) SENSOR

TMR Device with Novel Free Layer

Method of Fabricating a Magnetoresistive Element

Scalable Magnetoresistive Element

MR Enhancing Layer (MREL) For Spintronic Devices

MR Enhancing Layer (MREL) For Spintronic Devices

Magnetoresistance Effect Element and Magnetic Memory

Low Resistance Area Magnetic Stack

MAGNETORESISTIVE SENSOR FOR A MAGNETIC STORAGE SYSTEM READ HEAD, AN...

Structure and Method to Fabricate High Performance MTJ Devices for...

MAGNETIC HEAD, AND MAGNETIC STORAGE APPARATUS

MAGNETIC RANDOM ACCESS MEMORY (MRAM) WITH ENHANCED MAGNETIC STIFFNE...

MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL...

STACK WITH WIDE SEED LAYER

Free Layer with High Thermal Stability for Magnetic Device Applicat...

CoFeSiB/Pt Multilayers Exhibiting Perpendicular Magnetic Anisotropy

High Thermal Stability Free Layer with High Out-of-Plane Anisotropy...

METHOD AND SYSTEM FOR DEFINING A MAGNETORESISTIVE JUNCTION

MAGNETIC ELEMENT HAVING PERPENDICULAR ANISOTROPY WITH ENHANCED EFFI...

TUNNELING MAGNETORESISTANCE (TMR) READ SENSOR WITH A LONG DIFFUSION...

MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL...

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

Spin injection layer robustness for microwave assisted magnetic rec...

Scalable Magnetoresistive Element

Varyinig Morphology in Magnetic Sensor Sub-Layers

CoFe/Ni Multilayer Film with Perpendicular Anisotropy for Microwave...