Heating of the substrate

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CPC
C30B23/063

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B23/00Single-crystal growth by condensing evaporated or sublimed material

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C30B23/063Heating of the substrate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method for simultaneously manufacturing more than one single crysta...
- Patent number 12,157,955
- Issue date Dec 3, 2024
- SICRYSTAL GMBH
- Erwin Schmitt
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 12,116,696
- Issue date Oct 15, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki Takaoka
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
In-situ film growth rate monitoring apparatus, systems, and methods...
- Patent number 12,077,880
- Issue date Sep 3, 2024
- Applied Materials, Inc.
- Zhepeng Cong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Large diameter silicon carbide wafers
- Patent number 12,054,850
- Issue date Aug 6, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Transparent conductive oxide thin film and use thereof
- Patent number 11,982,017
- Issue date May 14, 2024
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sc...
- Ruyi Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC single crystal manufacturing method, SiC single crystal manufac...
- Patent number 11,932,967
- Issue date Mar 19, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Molecular-beam epitaxy system comprising an infrared radiation emit...
- Patent number 11,926,925
- Issue date Mar 12, 2024
- The Johns Hopkins University
- David B. Shrekenhamer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for a group-III nitride crystal that requires...
- Patent number 11,859,311
- Issue date Jan 2, 2024
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for heating a wide bandgap substrate by providing a resistiv...
- Patent number 11,629,401
- Issue date Apr 18, 2023
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
System for efficient manufacturing of a plurality of high-quality s...
- Patent number 11,560,643
- Issue date Jan 24, 2023
- SICRYSTAL GMBH
- Erwin Schmitt
- C30 - CRYSTAL GROWTH
Information Patent Grant
Stabilized, high-doped silicon carbide
- Patent number 11,371,163
- Issue date Jun 28, 2022
- Wolfspeed, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC substrate provided with graphene precursor...
- Patent number 11,365,491
- Issue date Jun 21, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapour-phase epitaxial growth method, and method for producing subs...
- Patent number 11,359,307
- Issue date Jun 14, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Electron beam heating and atomic surface restructuring of sapphire...
- Patent number 11,299,820
- Issue date Apr 12, 2022
- UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NASA.
- Sang H. Choi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thin film coating and method of fabrication thereof
- Patent number 11,274,360
- Issue date Mar 15, 2022
- PLASMIONIQUE INC.
- Daniele Benetti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film formation method, vacuum processing apparatus, method of manuf...
- Patent number 11,035,034
- Issue date Jun 15, 2021
- Canon Anelva Corporation
- Yoshiaki Daigo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Device of manufacturing silicon carbide single crystal
- Patent number 10,724,151
- Issue date Jul 28, 2020
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thermal absorption coating on sapphire for epitaxial process
- Patent number 10,651,034
- Issue date May 12, 2020
- Sang H. Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of high quality single crystalline thin films with the use o...
- Patent number 10,633,763
- Issue date Apr 28, 2020
- Rutgers, The State University of New Jersey
- Seongshik Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stabilized, high-doped silicon carbide
- Patent number 10,577,720
- Issue date Mar 3, 2020
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Terahertz antenna and method for producing a terahertz antenna
- Patent number 10,453,680
- Issue date Oct 22, 2019
- Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung E.V.
- Roman Dietz
- G01 - MEASURING TESTING
Information Patent Grant
Method for formation of a transition metal dichalcogenide (TMDC) ma...
- Patent number 10,354,868
- Issue date Jul 16, 2019
- Imec VZW
- Salim El Kazzi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide single crystal wafer and method of manufacturing a...
- Patent number 10,202,706
- Issue date Feb 12, 2019
- Showa Denko K.K.
- Masashi Nakabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heating system comprising semiconductor light sources
- Patent number 10,159,113
- Issue date Dec 18, 2018
- Koninklijke Philips N.V.
- Holger Möench
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal rhombohedral epitaxy of SiGe on sapphire at 450° C.-...
- Patent number 10,096,472
- Issue date Oct 9, 2018
- The United States of America as represented by the Administrator of NASA
- Sang Hyouk Choi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fabrication of semiconductor device using alternating high and low...
- Patent number 9,911,600
- Issue date Mar 6, 2018
- Infineon Technologies Americas Corp.
- Paul Bridger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dielectric film forming apparatus and method for forming dielectric...
- Patent number 9,593,409
- Issue date Mar 14, 2017
- Ulvac, Inc.
- Isao Kimura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for depositing a group III nitride semiconductor film
- Patent number 9,478,420
- Issue date Oct 25, 2016
- EVATEC AG
- Lorenzo Castaldi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for manufacture of super lattice using alternating high and...
- Patent number 9,157,169
- Issue date Oct 13, 2015
- International Rectifier Corporation
- Paul Bridger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Scintillator, method of fabricating the same and X-ray detector inc...
- Patent number 9,146,324
- Issue date Sep 29, 2015
- Samsung Display Co., Ltd.
- Kyung Soo Lee
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...

Patents Applicationslast 30 patents

Information Patent Application
IN-SITU FILM GROWTH RATE MONITORING APPARATUS, SYSTEMS, AND METHODS...
- Publication number 20240410078
- Publication date Dec 12, 2024
- Applied Materials, Inc.
- Zhepeng CONG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
- Publication number 20240352622
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
LASER PROCESSING SYSTEM INTEGRATED WITH MBE DEVICE
- Publication number 20240309544
- Publication date Sep 19, 2024
- Wuhan University
- Fang Dong
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20240254656
- Publication date Aug 1, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki TAKAOKA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Hierarchical Inverted/Normal Cobalt Ferrite Nano-Chessboard
- Publication number 20240240356
- Publication date Jul 18, 2024
- MORGAN STATE UNIVERSITY
- Abdellah Lisfi
- C30 - CRYSTAL GROWTH
Information Patent Application
MOLECULAR BEAM EPITAXY THIN FILM GROWTH APPARATUS
- Publication number 20240084442
- Publication date Mar 14, 2024
- University of Ulsan Foundation for Industry Cooperation
- Eun Jung PARK
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF USING SIC CONTAINER
- Publication number 20240044042
- Publication date Feb 8, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGHLY ORIENTED, SINGLE-CRYSTALLINE LOW-DIMENSIONAL NANOSTRUCTURES,...
- Publication number 20240011184
- Publication date Jan 11, 2024
- National University of Singapore
- Andrivo RUSYDI
- C30 - CRYSTAL GROWTH
Information Patent Application
NEW TRANSPARENT CONDUCTIVE OXIDE THIN FILM AND USE THEREOF
- Publication number 20240003051
- Publication date Jan 4, 2024
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of...
- Ruyi ZHANG
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SC...
- Publication number 20240003054
- Publication date Jan 4, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS OF DEPOSITING FILMS WITH THE SAME STOICHIOMETRIC FEATURES A...
- Publication number 20230349068
- Publication date Nov 2, 2023
- Board of Regents, The University of Texas System
- Manuel Quevedo Lopez
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRI...
- Publication number 20230304186
- Publication date Sep 28, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM FOR DEPOSITING PIEZOELECTRIC MATERIALS, METHODS FOR USING TH...
- Publication number 20230257869
- Publication date Aug 17, 2023
- QORVO BIOTECHNOLOGIES, LLC
- Derya Deniz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRA...
- Publication number 20230203704
- Publication date Jun 29, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS AND SYSTEMS FOR HEATING A WIDE BANDGAP SUBSTRATE
- Publication number 20230203643
- Publication date Jun 29, 2023
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUB...
- Publication number 20230193507
- Publication date Jun 22, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND METHOD OF MANUFACTURING SILICON...
- Publication number 20230160103
- Publication date May 25, 2023
- Sumitomo Electric Industries, Ltd.
- Shogo SAKAIYA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for heating a wide bandgap substrate by providing a resistiv...
- Publication number 20230131472
- Publication date Apr 27, 2023
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
System For Efficient Manufacturing Of A Plurality Of High-Quality S...
- Publication number 20230120928
- Publication date Apr 20, 2023
- SiCrystal GmbH
- Erwin Schmitt
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL MANUFACTURING METHOD, SIC SINGLE CRYSTAL MANUFAC...
- Publication number 20230024750
- Publication date Jan 26, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD FOR GROUP-III NITRIDE CRYSTAL
- Publication number 20220411964
- Publication date Dec 29, 2022
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
IN-SITU FILM GROWTH RATE MONITORING APPARATUS, SYSTEMS, AND METHODS...
- Publication number 20220349088
- Publication date Nov 3, 2022
- Applied Materials, Inc.
- Zhepeng CONG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SiC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, SiC INGOT PRODUCED...
- Publication number 20220333270
- Publication date Oct 20, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
WAFER TEMPERATURE GRADIENT CONTROL TO SUPPRESS SLIP FORMATION IN HI...
- Publication number 20220298672
- Publication date Sep 22, 2022
- ASM IP HOLDING B.V.
- Hichem M'Saad
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MANUFACTURING DEVICE FOR SIC SEMICONDUCTOR SUBSTRATE
- Publication number 20220259760
- Publication date Aug 18, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
CONTAINER MADE OF SIC
- Publication number 20220259759
- Publication date Aug 18, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, MANUFACTURING APPA...
- Publication number 20220220633
- Publication date Jul 14, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
VAPOR PHASE GROWTH APPARATUS
- Publication number 20210381128
- Publication date Dec 9, 2021
- NUFLARE TECHNOLOGY, INC.
- Yoshiaki DAIGO
- C30 - CRYSTAL GROWTH
Information Patent Application
SYNTHESIS OF SINGLE CRYSTAL FILMS ON AMORPHOUS SUBSTRATES
- Publication number 20210254237
- Publication date Aug 19, 2021
- Jagannathan Rajagopalan
- C30 - CRYSTAL GROWTH
Information Patent Application
MBE Growth Method To Enable Temperature Stability
- Publication number 20210140069
- Publication date May 13, 2021
- The Johns Hopkins University
- David B. Shrekenhamer
- C30 - CRYSTAL GROWTH

Heating of the substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for simultaneously manufacturing more than one single crysta...

Silicon carbide substrate

In-situ film growth rate monitoring apparatus, systems, and methods...

Large diameter silicon carbide wafers

Transparent conductive oxide thin film and use thereof

SiC single crystal manufacturing method, SiC single crystal manufac...

Molecular-beam epitaxy system comprising an infrared radiation emit...

Manufacturing method for a group-III nitride crystal that requires...

Method for heating a wide bandgap substrate by providing a resistiv...

System for efficient manufacturing of a plurality of high-quality s...

Stabilized, high-doped silicon carbide

Method for producing SiC substrate provided with graphene precursor...

Vapour-phase epitaxial growth method, and method for producing subs...

Electron beam heating and atomic surface restructuring of sapphire...

Thin film coating and method of fabrication thereof

Film formation method, vacuum processing apparatus, method of manuf...

Device of manufacturing silicon carbide single crystal

Thermal absorption coating on sapphire for epitaxial process

Growth of high quality single crystalline thin films with the use o...

Stabilized, high-doped silicon carbide

Terahertz antenna and method for producing a terahertz antenna

Method for formation of a transition metal dichalcogenide (TMDC) ma...

Silicon carbide single crystal wafer and method of manufacturing a...

Heating system comprising semiconductor light sources

Single crystal rhombohedral epitaxy of SiGe on sapphire at 450° C.-...

Fabrication of semiconductor device using alternating high and low...

Dielectric film forming apparatus and method for forming dielectric...

Method for depositing a group III nitride semiconductor film

Process for manufacture of super lattice using alternating high and...

Scintillator, method of fabricating the same and X-ray detector inc...

Patents Applicationslast 30 patents

IN-SITU FILM GROWTH RATE MONITORING APPARATUS, SYSTEMS, AND METHODS...

LARGE DIAMETER SILICON CARBIDE WAFERS

LASER PROCESSING SYSTEM INTEGRATED WITH MBE DEVICE

SILICON CARBIDE SUBSTRATE

Hierarchical Inverted/Normal Cobalt Ferrite Nano-Chessboard

MOLECULAR BEAM EPITAXY THIN FILM GROWTH APPARATUS

METHOD OF USING SIC CONTAINER

HIGHLY ORIENTED, SINGLE-CRYSTALLINE LOW-DIMENSIONAL NANOSTRUCTURES,...

NEW TRANSPARENT CONDUCTIVE OXIDE THIN FILM AND USE THEREOF

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SC...

METHODS OF DEPOSITING FILMS WITH THE SAME STOICHIOMETRIC FEATURES A...

METHOD FOR MANUFACTURING ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRI...

SYSTEM FOR DEPOSITING PIEZOELECTRIC MATERIALS, METHODS FOR USING TH...

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRA...

METHODS AND SYSTEMS FOR HEATING A WIDE BANDGAP SUBSTRATE

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUB...

SILICON CARBIDE SINGLE CRYSTAL AND METHOD OF MANUFACTURING SILICON...

Method for heating a wide bandgap substrate by providing a resistiv...

System For Efficient Manufacturing Of A Plurality Of High-Quality S...

SIC SINGLE CRYSTAL MANUFACTURING METHOD, SIC SINGLE CRYSTAL MANUFAC...

MANUFACTURING METHOD FOR GROUP-III NITRIDE CRYSTAL

IN-SITU FILM GROWTH RATE MONITORING APPARATUS, SYSTEMS, AND METHODS...

SiC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, SiC INGOT PRODUCED...

WAFER TEMPERATURE GRADIENT CONTROL TO SUPPRESS SLIP FORMATION IN HI...

MANUFACTURING DEVICE FOR SIC SEMICONDUCTOR SUBSTRATE

CONTAINER MADE OF SIC

METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, MANUFACTURING APPA...

VAPOR PHASE GROWTH APPARATUS

SYNTHESIS OF SINGLE CRYSTAL FILMS ON AMORPHOUS SUBSTRATES

MBE Growth Method To Enable Temperature Stability